We have measured the mobilities of electrons in thin,vapor-deposited films of tris(8-hydroxyquinolinolato)aluminum(Alq3)based on silicium using a time-of-flight(TOF)technique.The drift of electron mobility is strongly...We have measured the mobilities of electrons in thin,vapor-deposited films of tris(8-hydroxyquinolinolato)aluminum(Alq3)based on silicium using a time-of-flight(TOF)technique.The drift of electron mobility is strongly electric field and temperature dependent.At room temperature and an electric field of 2×10^5V·cm^-1,the effective mobility of electron is 1.0×10^-5cm^2·V^-1·s^-1 for 200nm thick sample.展开更多
文摘We have measured the mobilities of electrons in thin,vapor-deposited films of tris(8-hydroxyquinolinolato)aluminum(Alq3)based on silicium using a time-of-flight(TOF)technique.The drift of electron mobility is strongly electric field and temperature dependent.At room temperature and an electric field of 2×10^5V·cm^-1,the effective mobility of electron is 1.0×10^-5cm^2·V^-1·s^-1 for 200nm thick sample.
