An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper i...An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper introduces a newly developed planar MOSFET--UniFETTM Ⅱ MOSFET--with highly improved body diode characteristics, and presents its performance and effectiveness. UniFET II MOSFET is divided into normal FET（field effect transistor）, FRFET （fast recovery field effect transistor）, and Ultra FRFET MOSFETs according to the concentration of lifetime control, and their reverse recovery times are about 70%, 25%, and 15% of that of a conventional MOSFET, respectively. To verify the performance and effectiveness of the new MOSFET, an experiment using a 150 W HID （high intensity discharge） lamp ballast that includes a mixed frequency inverter was implemented. As a result, it was verified that two UniFET Ⅱ MOSFETs can replace two conventional MOSFEs and four additional FRDs （fast recovery diodes） without MOSFET failure.展开更多
文摘An advanced cell structure and lifetime control technology has enhanced on-resistance and reverse recovery performance of power MOSFET （metal oxide semiconductor field-effect transistor） simultaneously. This paper introduces a newly developed planar MOSFET--UniFETTM Ⅱ MOSFET--with highly improved body diode characteristics, and presents its performance and effectiveness. UniFET II MOSFET is divided into normal FET（field effect transistor）, FRFET （fast recovery field effect transistor）, and Ultra FRFET MOSFETs according to the concentration of lifetime control, and their reverse recovery times are about 70%, 25%, and 15% of that of a conventional MOSFET, respectively. To verify the performance and effectiveness of the new MOSFET, an experiment using a 150 W HID （high intensity discharge） lamp ballast that includes a mixed frequency inverter was implemented. As a result, it was verified that two UniFET Ⅱ MOSFETs can replace two conventional MOSFEs and four additional FRDs （fast recovery diodes） without MOSFET failure.
