A numerical schemes applicable to the direct solution of Boltzmann transport equation (BTE) in vertical-SOI NMOSFET are investigated by means of the finite element analysis (FEA).The solution gives the electron distri...A numerical schemes applicable to the direct solution of Boltzmann transport equation (BTE) in vertical-SOI NMOSFET are investigated by means of the finite element analysis (FEA).The solution gives the electron distribution function,electrostatic potential,carriers concentration,drift velocity,average energy and drain current by directly solving the BTE and the Poisson equation self-consistency.The result shows that the direct numerical solution of the BTE with the aid of FEA and vertical SOI NMOSFET is a promising approach for ultra short channel transistors modeling.展开更多
文摘A numerical schemes applicable to the direct solution of Boltzmann transport equation (BTE) in vertical-SOI NMOSFET are investigated by means of the finite element analysis (FEA).The solution gives the electron distribution function,electrostatic potential,carriers concentration,drift velocity,average energy and drain current by directly solving the BTE and the Poisson equation self-consistency.The result shows that the direct numerical solution of the BTE with the aid of FEA and vertical SOI NMOSFET is a promising approach for ultra short channel transistors modeling.
