Low-frequency and high-frequency Capacitance-Voltage （C-V） curves of Metal-Oxide- Semiconductor Capacitors （MOSC）, including electron and hole trapping at the dopant donor and acceptor impurities, are presented to...Low-frequency and high-frequency Capacitance-Voltage （C-V） curves of Metal-Oxide- Semiconductor Capacitors （MOSC）, including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from 〉 0.01Cox to 〉 10Cox. Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, NDD, the ground state electron trapping energy level depth measured from the conduction band edge, Ec - ED, the degeneracy of the trapped electron at the ground state, gD, the device temperature, T, and the gate oxide thickness, xox.展开更多
Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-s...Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simu- late chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.展开更多
Low-frequency and High-frequency Capacitance-Voltage(C-V) curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generation-recombination -trap...Low-frequency and High-frequency Capacitance-Voltage(C-V) curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generation-recombination -trapping impurities,are presented to illustrate the enhancement of the giant trapping capacitances by physical means via device and circuit designs,in contrast to chemical means via impurity characteristics previously reported.Enhancement is realized by masking the electron or/and hole storage capacitances to make the trapping capacitances dominant at the terminals.Device and materials properties used in the computed CV curves are selected to illustrate experimental realizations for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.展开更多
This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors（BiFETs） with a pure base and two MOS gates operating in the unipo...This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors（BiFETs） with a pure base and two MOS gates operating in the unipolar（electron） current mode.These nMOS-BiFETs,known as nMOS-FinFETs,usually have electrically short channels compared with their intrinsic Debye length of about 25μm at room temperatures.These longitudinal electric current terms are important short-channel current components,which have been neglected in the computation of the long-channel electrical characteristics.This paper shows that the long-channel electrical characteristics are substantially modified by the longitudinal electrical current terms when the physical channel length is less than 100 nm.展开更多
The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is de- rived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionization are included...The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is de- rived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionization are included in the DC-voltage scale. The low-frequency and high-frequency capacitances, and their differences and derivatives, are computed in the presence of an unlimited source of minority and maj ority carriers. The results show that their difference and their DC-voltage derivatives, are large and readily measurable, hence suitable as a method for characterizing the electronic trapping parameters at dopant impurity centers and for a number of lower power signal processing and device technology monitoring applications.展开更多
Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombi- nation （R-DCIV） at SiO2/Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-...Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombi- nation （R-DCIV） at SiO2/Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range.展开更多
Metal-Oxide-Semiconductor Capacitance-Voltage(MOSCV)characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped,n-doped,p-doped and compe...Metal-Oxide-Semiconductor Capacitance-Voltage(MOSCV)characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped,n-doped,p-doped and compensated silicon containing the double-donor sulfur and iron,the double-acceptor zinc,and the amphoteric or one-donor and one-acceptor gold and silver impurities.These impurities provide giant trapping ca-pacitances at trapping energies from 200 to 800 meV(50 to 200 THz and 6 to 1.5μm),which suggest potential sub-millimeter,far-infrared and spin electronics applications.展开更多
基金supported by Xiamen University,Chinathe CTSAH Associates(CTSA)founded by the late Linda Su-Nan Chang Sah
文摘Low-frequency and high-frequency Capacitance-Voltage （C-V） curves of Metal-Oxide- Semiconductor Capacitors （MOSC）, including electron and hole trapping at the dopant donor and acceptor impurities, are presented to illustrate giant trapping capacitances, from 〉 0.01Cox to 〉 10Cox. Five device and materials parameters are varied for fundamental trapping parameter characterization, and electrical and optical signal processing applications. Parameters include spatially constant concentration of the dopant-donor-impurity electron trap, NDD, the ground state electron trapping energy level depth measured from the conduction band edge, Ec - ED, the degeneracy of the trapped electron at the ground state, gD, the device temperature, T, and the gate oxide thickness, xox.
基金supported by Xiamen University,Chinathe CTSAH Associates(CTSA)founded by the late Linda Su-Nan Chang Sah
文摘Low-frequency and high-frequency capacitance-voltage curves of Metal-Oxide-Semiconductor Capacitors are presented to illustrate giant electron and hole trapping capacitances at many simultaneously present two-charge-state and one-trapped-carrier, or one-energy-level impurity species. Models described include a donor electron trap and an acceptor hole trap, both donors, both acceptors, both shallow energy levels, both deep, one shallow and one deep, and the identical donor and acceptor. Device and material parameters are selected to simu- late chemically and physically realizable capacitors for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.
基金supported by the Xiamen University,China,and the CTSAH Associates(CTSA),founded by the late Linda Su-Nan Chang Sah
文摘Low-frequency and High-frequency Capacitance-Voltage(C-V) curves of Silicon Metal-Oxide-Semiconductor Capacitors,showing electron and hole trapping at shallow-level dopant and deep-level generation-recombination -trapping impurities,are presented to illustrate the enhancement of the giant trapping capacitances by physical means via device and circuit designs,in contrast to chemical means via impurity characteristics previously reported.Enhancement is realized by masking the electron or/and hole storage capacitances to make the trapping capacitances dominant at the terminals.Device and materials properties used in the computed CV curves are selected to illustrate experimental realizations for fundamental trapping parameter characterizations and for electrical and optical signal processing applications.
基金supported by the CTSAH Associates(CTSA),founded by the late Linda Su-Nan Chang Sah.
文摘This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors（BiFETs） with a pure base and two MOS gates operating in the unipolar（electron） current mode.These nMOS-BiFETs,known as nMOS-FinFETs,usually have electrically short channels compared with their intrinsic Debye length of about 25μm at room temperatures.These longitudinal electric current terms are important short-channel current components,which have been neglected in the computation of the long-channel electrical characteristics.This paper shows that the long-channel electrical characteristics are substantially modified by the longitudinal electrical current terms when the physical channel length is less than 100 nm.
基金supported by the CTSAH Associates(CTSA)founded by the late Linda Su-Nan Chang Sahthe Xiamen University,China
文摘The capacitance versus DC-voltage formula from electron trapping at dopant impurity centers is de- rived for MOS capacitors by the charge-storage method. Fermi-Dirac distribution and impurity deionization are included in the DC-voltage scale. The low-frequency and high-frequency capacitances, and their differences and derivatives, are computed in the presence of an unlimited source of minority and maj ority carriers. The results show that their difference and their DC-voltage derivatives, are large and readily measurable, hence suitable as a method for characterizing the electronic trapping parameters at dopant impurity centers and for a number of lower power signal processing and device technology monitoring applications.
基金This investigation is supported by the CTSAH Associates(CTSA)founded by the late Linda Su-Nan Chang Sah
文摘Impurity deionization on the direct-current current-voltage characteristics from electron-hole recombi- nation （R-DCIV） at SiO2/Si interface traps in MOS transistors is analyzed using the steady-state Shockley-Read-Hall recombination kinetics and the Fermi distributions for electrons and holes. Insignificant distortion is observed over 90% of the bell-shaped R-DCIV curves centered at their peaks when impurity deionization is excluded in the theory. This is due to negligible impurity deionization because of the much lower electron and hole concentrations at the interface than the impurity concentration in the 90% range.
基金Supported by the Xiamen University,China,and the CISAH Associates(CTSA),founded by the late Linda Su-Nan Chang Sah
文摘Metal-Oxide-Semiconductor Capacitance-Voltage(MOSCV)characteristics containing giant carrier trapping capacitances from 3-charge-state or 2-energy-level impurities are presented for not-doped,n-doped,p-doped and compensated silicon containing the double-donor sulfur and iron,the double-acceptor zinc,and the amphoteric or one-donor and one-acceptor gold and silver impurities.These impurities provide giant trapping ca-pacitances at trapping energies from 200 to 800 meV(50 to 200 THz and 6 to 1.5μm),which suggest potential sub-millimeter,far-infrared and spin electronics applications.
