GalnP/GaAs//Ge triple-junction solar cells are irradiated with 1.0, 1.8, and 11.5 MeV electrons with fluence rang- ing up to 3 × 10^15, 3×10^15, and 3×10^14cn^-2, respectively. Their performance degrada...GalnP/GaAs//Ge triple-junction solar cells are irradiated with 1.0, 1.8, and 11.5 MeV electrons with fluence rang- ing up to 3 × 10^15, 3×10^15, and 3×10^14cn^-2, respectively. Their performance degradation effects are analyzed by using current-voltage characteristics, spectral response measurements, and electron irradiation-induced dis- placements. The degradation rates of the maximum power and the spectral response of the solar cells increase with the electron fluence, and also increase with the increasing electron energy. It is observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 10675023, 11075018 and 11375028, the Specialized Research Fund for the Doctoral Program of Higher Education under Grant No 20120003110011, and the Fundamental Research Funds for the Central Universities.
文摘GalnP/GaAs//Ge triple-junction solar cells are irradiated with 1.0, 1.8, and 11.5 MeV electrons with fluence rang- ing up to 3 × 10^15, 3×10^15, and 3×10^14cn^-2, respectively. Their performance degradation effects are analyzed by using current-voltage characteristics, spectral response measurements, and electron irradiation-induced dis- placements. The degradation rates of the maximum power and the spectral response of the solar cells increase with the electron fluence, and also increase with the increasing electron energy. It is observed that the spectral response of the GaAs middle cell degrades more significantly than that of the GaInP top cell.
