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Determination of Mean Inner Potential by Electron Holography Along with Electron Dynamic Simulation 被引量:1
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作者 王岩国 刘红荣 +1 位作者 杨奇斌 张泽 《Chinese Physics Letters》 SCIE CAS CSCD 2003年第12期2214-2217,共4页
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A HRTEM and XRD Study of the Potassium Hexatitanate Nanowires
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作者 BingsheXU PeideHAN +3 位作者 JianLIANG YuanYU HuiqiangBAO XuguangLIU 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2004年第6期681-683,共3页
The structure of potassium hexatitanate (K_2Ti_6O_13) nanowires has been investigated using both the Rietveld powder diffraction profile fitting technique and high resolution transmission electron microscopy (HRTEM) i... The structure of potassium hexatitanate (K_2Ti_6O_13) nanowires has been investigated using both the Rietveld powder diffraction profile fitting technique and high resolution transmission electron microscopy (HRTEM) image simulations. From the Rietveld analysis it was shown that the nanowires had a monoclinic structure of the space group C2/M and the lattice parameters were a=1.5582 nm, 6=0.382 nm, c=0.9112 nm. HRTEM conclusions agree with refinement results obtained from experimental XRD data. The good agreement between the experimental and simulated images confirms that the nanowires is indeed K_2Ti_6O_13 nanowire.The growth axes of nanowires were mainly along the [010] direction. 展开更多
关键词 Potassium hexatitanate X-ray diffiraction HRTEM technique Crystal structure
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Quantitative Analysis of Zero and High Order Laue Zones Effects on the Exit Wave Function
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作者 CanyingCAI QibinYANG +1 位作者 HongrongLIU YanguoWANG 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2004年第5期481-484,共4页
The exit wave function including zero and high order Laue zones has been simulated by both multi-slice method and electron dynamic diffraction analytical expression. Coincidence of the simulations by these two methods... The exit wave function including zero and high order Laue zones has been simulated by both multi-slice method and electron dynamic diffraction analytical expression. Coincidence of the simulations by these two methods was achieved. The calculated results showed that the exit wave function highly dominated by zero order Laue zone, while high order ones modify the exit wave function to some extent depending on the situation. High order Laue zone effects become important for the following cases: sample consists of light elements, the thickness is very thin, lattice planar spacing perpendicular to the direction of the incident beam is large, and the electron beam has long wavelength. In these cases the exit wave function should be corrected by adding high order Laue zone effects. The analytical expression is effective and convenient for dealing with high order Laue zone effects. 展开更多
关键词 Electron dynamical diffraction Electron crystallography High order Laue zone
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Determination of the Potential Barrier at the Metal/Oxide Interface in a Specular Spin Valve Structure with Nano—oxide Layers Using Electron Holography
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作者 王岩国 沈峰 《Chinese Physics Letters》 SCIE CAS CSCD 2002年第10期1480-1482,共3页
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Influence of Mass Transport on Formation of Si—Nanostructures
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作者 张晓娜 李超荣 《Chinese Physics Letters》 SCIE CAS CSCD 2003年第1期111-113,共3页
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Determination of Inelastic Mean Free Path by Electron Holography Along with Electron Dynamic Calculation
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作者 WANGYan-Guo LIUHong-Rong +1 位作者 YANGQi-Bin ZHANGZe 《Chinese Physics Letters》 SCIE CAS CSCD 2003年第6期888-890,共3页
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Electron Holography of Barrier Structures in Co/ZrAlOx/Co Magnetic Tunnel Junctions
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作者 张喆 朱涛 +4 位作者 沈峰 盛雯婷 王为刚 肖强 张泽 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第7期1732-1735,共4页
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Defects in GaN Films Grown on Si(111) Substrates by Metal-Organic Chemical Vapour Deposition
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作者 胡桂青 孔翔 +4 位作者 万里 王乙潜 段晓峰 陆沅 刘祥林 《Chinese Physics Letters》 SCIE CAS CSCD 2003年第10期1811-1814,共4页
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Rapid Thermal Annealing Effects on Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Capped by InAIAs/InGaAs Layers
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作者 吕威 黎大兵 +4 位作者 张子旸 李超荣 张泽 徐波 王占国 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第4期967-970,共4页
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Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of InxGa1-xN/GaN Multiple Quantum Wells
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作者 吕威 黎大兵 +2 位作者 李超荣 陈岗 张泽 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第4期971-974,共4页
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Bulk—like contribution of tunnel magnetoresistance in magnetic tunnel junctions
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作者 朱涛 詹文山 +4 位作者 沈峰 张泽 X.H.Xiang G.Landry JohnQ.Xiao 《Chinese Physics B》 SCIE EI CAS CSCD 2003年第6期665-668,共4页
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