Methoxy groups is favorable for film-forming property of oligophenylenevinylenes （OPVs） and the Langmuir-Blodgett film of 1,4-bis （3,4,5-trimetlaoxystyryl）-2,5-dimethoxybenzene （MOPV） was prepared. It might be t...Methoxy groups is favorable for film-forming property of oligophenylenevinylenes （OPVs） and the Langmuir-Blodgett film of 1,4-bis （3,4,5-trimetlaoxystyryl）-2,5-dimethoxybenzene （MOPV） was prepared. It might be the formation of H-aggregate of MOPV in the LB film that results in a 57 nm blue shift of λmax for the absorption and a 58 nm red shift of λmax for the fluorescence, respectively.展开更多
A ZnO–SnO_2 nanowires（NWs） array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet...A ZnO–SnO_2 nanowires（NWs） array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I_（on）/I_（off） ratios（up to 10~3）, good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices.展开更多
This work reports the fabrication of via-thin-film light-emitting diode （via-TF-LED） to improve the light output power （LOP） of blue/white GaN-based LEDs grown on Si （111） substrates. The as-fabricated via-TF-LE...This work reports the fabrication of via-thin-film light-emitting diode （via-TF-LED） to improve the light output power （LOP） of blue/white GaN-based LEDs grown on Si （111） substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells （MQWs） into the n-GaN layer. When operated at 350 mA, the via-TF- LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED （TF-LED） and the conventional lateral structure LED （LS-LED）. After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improve- ment of the via-TF-LED was attributed to the elimination of light absorption by the Si （111） epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.展开更多
文摘Methoxy groups is favorable for film-forming property of oligophenylenevinylenes （OPVs） and the Langmuir-Blodgett film of 1,4-bis （3,4,5-trimetlaoxystyryl）-2,5-dimethoxybenzene （MOPV） was prepared. It might be the formation of H-aggregate of MOPV in the LB film that results in a 57 nm blue shift of λmax for the absorption and a 58 nm red shift of λmax for the fluorescence, respectively.
基金supported by the National Science Foundation of China(No.61504136)the State Key Laboratory of Applied Optics,Changchun Institute of Optics,Fine and Physics,Chinese Academy of Sciences
文摘A ZnO–SnO_2 nanowires（NWs） array, as a metal oxide semiconductor, was successfully synthesized by a near-field electrospinning method for the applications as high performance ultraviolet photodetectors. Ultraviolet photodetectors based on a single nanowire exhibited excellent photoresponse properties to 300 nm ultraviolet light illumination including ultrahigh I_（on）/I_（off） ratios（up to 10~3）, good stability and reproducibility because of the separation between photo-generated electron-hole pairs. Moreover, the NWs array shows an enhanced photosensing performance. Flexible photodetectors on the PI substrates with similar tendency properties were also fabricated. In addition, under various bending curvatures and cycles, the as-fabricated flexible photodetectors revealed mechanical flexibility and good stable electrical properties, showing that they have the potential for applications in future flexible photoelectron devices.
基金Project supported by the National Key R&D Program(Nos.2016YFB0400100,2016YFB0400104)the National Natural Science Foundation of China(Nos.61534007,61404156,61522407,61604168,61775230)+7 种基金the Key Frontier Scientific Research Program of the Chinese Academy of Sciences(No.QYZDB-SSW-JSC014)the Science and Technology Service Network Initiative of the Chinese Academy of Sciencesthe Key R&D Program of Jiangsu Province(No.BE2017079)the Natural Science Foundation of Jiangsu Province(No.BK20160401)the China Postdoctoral Science Foundation(No.2016M591944)supported by the Open Fund of the State Key Laboratory of Luminescence and Applications(No.SKLA-2016-01)the Open Fund of the State Key Laboratory on Integrated Optoelectronics(Nos.IOSKL2016KF04,IOSKL2016KF07)the Seed Fund from SINANO,CAS(No.Y5AAQ51001)
文摘This work reports the fabrication of via-thin-film light-emitting diode （via-TF-LED） to improve the light output power （LOP） of blue/white GaN-based LEDs grown on Si （111） substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells （MQWs） into the n-GaN layer. When operated at 350 mA, the via-TF- LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED （TF-LED） and the conventional lateral structure LED （LS-LED）. After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improve- ment of the via-TF-LED was attributed to the elimination of light absorption by the Si （111） epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface.
