Inductively coupled plasma （ICP） etching of single crystal 6H-silicon carbide （SIC） is investigated using oxygen （O2）-added sulfur hexafluoride （SF6） plasmas. The relations between the microtrenching effect an...Inductively coupled plasma （ICP） etching of single crystal 6H-silicon carbide （SIC） is investigated using oxygen （O2）-added sulfur hexafluoride （SF6） plasmas. The relations between the microtrenching effect and ICP coil power, the composition of the etch gases and different bias voltages are discussed. Experimental results show that the microtrench is caused by the formation of a SiFxOy layer, which has a greater tendency to charge than SiC, after the addition of O2. The microtrenching effect tends to increase as the ICP coil power and bias voltage increase. In addition, the angular distribution of the incident ions and radicals also affects the shape of the microtrench.展开更多
Using an exact solution of two-dimensional Poisson＇s equation in cylindrical coordinates,a new analytical model comprising electrostatic potential,electric field,threshold voltage and subthreshold current for halodop...Using an exact solution of two-dimensional Poisson＇s equation in cylindrical coordinates,a new analytical model comprising electrostatic potential,electric field,threshold voltage and subthreshold current for halodoped surrounding-gate MOSFETs is developed.It is found that a new analytical model exhibits higher accuracy than that based on parabolic potential approximation when the thickness of the silicon channel is much larger than that of the oxide.It is also revealed that moderate halo doping concentration,thin gate oxide thickness and small silicon channel radius are needed to improve the threshold voltage characteristics.The derived analytical model agrees well with a three-dimensional numerical device simulator ISE.展开更多
基金supported by the Chinese National Advance Research Program of Science and Technology (Nos. 51308030201, 51323040118)
文摘Inductively coupled plasma （ICP） etching of single crystal 6H-silicon carbide （SIC） is investigated using oxygen （O2）-added sulfur hexafluoride （SF6） plasmas. The relations between the microtrenching effect and ICP coil power, the composition of the etch gases and different bias voltages are discussed. Experimental results show that the microtrench is caused by the formation of a SiFxOy layer, which has a greater tendency to charge than SiC, after the addition of O2. The microtrenching effect tends to increase as the ICP coil power and bias voltage increase. In addition, the angular distribution of the incident ions and radicals also affects the shape of the microtrench.
基金Project supported by the National Natural Science Foundation of China(No.61076101)
文摘Using an exact solution of two-dimensional Poisson＇s equation in cylindrical coordinates,a new analytical model comprising electrostatic potential,electric field,threshold voltage and subthreshold current for halodoped surrounding-gate MOSFETs is developed.It is found that a new analytical model exhibits higher accuracy than that based on parabolic potential approximation when the thickness of the silicon channel is much larger than that of the oxide.It is also revealed that moderate halo doping concentration,thin gate oxide thickness and small silicon channel radius are needed to improve the threshold voltage characteristics.The derived analytical model agrees well with a three-dimensional numerical device simulator ISE.
