The Gibbs free energy is strongly related to the stability and catalytic function of an enzyme through the energetic changes that occur in the chemical reactions the enzyme catalyzes. In this in silico study, a pulsed...The Gibbs free energy is strongly related to the stability and catalytic function of an enzyme through the energetic changes that occur in the chemical reactions the enzyme catalyzes. In this in silico study, a pulsed electric field was applied to an azoreductase, and its effect on the Gibbs free energy of molecular docking with two dyes was measured. We propose that certain stimuli from a pulsed electric field favor the structural stability of the enzyme by promoting an arrangement in the active site, potentially leading to an enhancement of enzymatic activity overall.展开更多
In this work, the laser induced plasma plume characteristics and surface morphology of Pt- and Ag-ion deposited silicon were studied. The deposited silicon was exposed to cumulative laser pulses. The plasma plume imag...In this work, the laser induced plasma plume characteristics and surface morphology of Pt- and Ag-ion deposited silicon were studied. The deposited silicon was exposed to cumulative laser pulses. The plasma plume images produced by each laser shot were captured through a computer controlled image capturing system and analyzed with image-J software. The integrated optical emission intensity of both samples showed an increasing trend with increasing pulses. Agion deposited silicon showed higher optical emission intensity as compared to Pt-ion deposited silicon, suggesting that more damage occurred to the silicon by Ag ions, which was confirmed by SRIM/TRIM simulations. The surface morphologies of both samples were examined by optical microscope showing thermal, exfoliational and hydrodynamical sputtering processes along with the re-deposition of the material, debris and heat affected zones＇ formation. The crater of Ption deposited silicon was deeper but had less lateral damage than Agion deposited silicon. The novel results clearly indicated that the ion deposited silicon surface produced incubation centers, which led to more absorption of incident light resulting into a higher emission intensity from the plasma plume and deeper crater formation as compared to pure silicon. The approach can be effectively utilized in the laser induced breakdown spectroscopy technique, which endures poor limits of detection.展开更多
Supercapacitors have attracted significant attention as a promising energy storage technology due to their high power density and rapid charge-discharge capabilities.In this study,we synthesized bismuth vanadate(BiVO_...Supercapacitors have attracted significant attention as a promising energy storage technology due to their high power density and rapid charge-discharge capabilities.In this study,we synthesized bismuth vanadate(BiVO_(4))with varying molar ratios using the sol-gel combustion method and evaluated their effectiveness as supercapacitor electrodes.Crystallographic and morphological analyses confirmed the formation of nanoparticles with different phases.The vanadium-rich BiVO_(4)compound electrode exhibited a maximum specific capacitance of 893 F·g^(-1)at a current density of 0.5 A·g^(-1)and demonstrated superior rate capability.Additionally,an all-solid-state asymmetric supercapacitor,fabricated using vanadium-rich BiVO_(4)and activated carbon along with a gel electrolyte,achieved an energy density of 6.66 Wh·kg^(-1)at a power density of 600 W·kg^(-1)and sustained 86%capacitance retention after 10000 cycles.These results highlight the potential of Bi-V compounds in energy storage applications.展开更多
The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction,named as gate-controlled supercurrent(GCS),has raised great interest for fundamental an...The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction,named as gate-controlled supercurrent(GCS),has raised great interest for fundamental and technological reasons.To gain a deeper understanding of this effect and develop superconducting technologies based on it,the material and physical parameters crucial for the GCS effect must be identified.Top-down fabrication protocols should also be optimized to increase device scalability,although studies suggest that top-down fabricated devices are more resilient to show a GCS.Here,we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the noncentrosymmetric superconductor niobium rhenium with varying ratios of the constituents(NbRe).Unlike other devices previously reported and made with a top-down approach,our NbRe devices systematically exhibit a GCS effect when they were fabricated from NbRe thin films with small grain size and etched in specific conditions.These observations pave the way for the realization of top-down-made GCS devices with high scalability.Our results also imply that physical parameters like structural disorder and surface physical properties of the nanobridges,which can be in turn modified by the fabrication process,are crucial for a GCS observation,providing therefore also important insights into the physics underlying the GCS effect.展开更多
Copper selenide（Cu3Se2/thin films have been synthesized with Se as the precursor in aqueous solution by chemical bath deposition technique at room temperature.We have investigated the influence of the growth time ran...Copper selenide（Cu3Se2/thin films have been synthesized with Se as the precursor in aqueous solution by chemical bath deposition technique at room temperature.We have investigated the influence of the growth time ranging from 30 to 90 min on structural,optical and electrical properties of Cu3Se2 thin films.The as-grown film at 60 min exhibits a tetragonal structure and is（101）oriented.The maximum value of crystal size DD55 nm is attained for Cu3Se2 films grown at 60 min.The Raman spectrum reveals a pronounced peak at 259 cm 1,which is assigned to vibrational（stretching）modes from the covalent Se–Se bonds.The optical band gap energy is 1.91 to2.01 eV with growth time increased from 30 to 90 min.The scanning electron microscopy（SEM）study reveals that the grains are uniform and spread over the entire surface of the substrate of the film at 60 min.The Hall effect study reveals that the film exhibits p-type conductivity.The synthesized film showed good absorbance in the visible region which signifies that synthesized Cu3Se2 films can be suitable as a sensitized material in semiconductor sensitized solar cells.展开更多
文摘The Gibbs free energy is strongly related to the stability and catalytic function of an enzyme through the energetic changes that occur in the chemical reactions the enzyme catalyzes. In this in silico study, a pulsed electric field was applied to an azoreductase, and its effect on the Gibbs free energy of molecular docking with two dyes was measured. We propose that certain stimuli from a pulsed electric field favor the structural stability of the enzyme by promoting an arrangement in the active site, potentially leading to an enhancement of enzymatic activity overall.
文摘In this work, the laser induced plasma plume characteristics and surface morphology of Pt- and Ag-ion deposited silicon were studied. The deposited silicon was exposed to cumulative laser pulses. The plasma plume images produced by each laser shot were captured through a computer controlled image capturing system and analyzed with image-J software. The integrated optical emission intensity of both samples showed an increasing trend with increasing pulses. Agion deposited silicon showed higher optical emission intensity as compared to Pt-ion deposited silicon, suggesting that more damage occurred to the silicon by Ag ions, which was confirmed by SRIM/TRIM simulations. The surface morphologies of both samples were examined by optical microscope showing thermal, exfoliational and hydrodynamical sputtering processes along with the re-deposition of the material, debris and heat affected zones＇ formation. The crater of Ption deposited silicon was deeper but had less lateral damage than Agion deposited silicon. The novel results clearly indicated that the ion deposited silicon surface produced incubation centers, which led to more absorption of incident light resulting into a higher emission intensity from the plasma plume and deeper crater formation as compared to pure silicon. The approach can be effectively utilized in the laser induced breakdown spectroscopy technique, which endures poor limits of detection.
基金Supporting Project Number(RSP2025R348),King Saud University,Riyadh,Saudi Arabia.The author PEL thankful to ANID for the FONDECYT fellowship(#3230388)under ANID,CHILE for the financial support the FONDECYT#11220335.
文摘Supercapacitors have attracted significant attention as a promising energy storage technology due to their high power density and rapid charge-discharge capabilities.In this study,we synthesized bismuth vanadate(BiVO_(4))with varying molar ratios using the sol-gel combustion method and evaluated their effectiveness as supercapacitor electrodes.Crystallographic and morphological analyses confirmed the formation of nanoparticles with different phases.The vanadium-rich BiVO_(4)compound electrode exhibited a maximum specific capacitance of 893 F·g^(-1)at a current density of 0.5 A·g^(-1)and demonstrated superior rate capability.Additionally,an all-solid-state asymmetric supercapacitor,fabricated using vanadium-rich BiVO_(4)and activated carbon along with a gel electrolyte,achieved an energy density of 6.66 Wh·kg^(-1)at a power density of 600 W·kg^(-1)and sustained 86%capacitance retention after 10000 cycles.These results highlight the potential of Bi-V compounds in energy storage applications.
基金the European Union’s Horizon 2020 Research and Innovation Program under Grant Agreement No.964398(SuperGate)the US ONR(Nos.N00014-21-1-2879,N00014-20-1-2442,and N00014-23-1-2866).
文摘The application of a gate voltage to control the superconducting current flowing through a nanoscale superconducting constriction,named as gate-controlled supercurrent(GCS),has raised great interest for fundamental and technological reasons.To gain a deeper understanding of this effect and develop superconducting technologies based on it,the material and physical parameters crucial for the GCS effect must be identified.Top-down fabrication protocols should also be optimized to increase device scalability,although studies suggest that top-down fabricated devices are more resilient to show a GCS.Here,we investigate gated superconducting nanobridges made with a top-down fabrication process from thin films of the noncentrosymmetric superconductor niobium rhenium with varying ratios of the constituents(NbRe).Unlike other devices previously reported and made with a top-down approach,our NbRe devices systematically exhibit a GCS effect when they were fabricated from NbRe thin films with small grain size and etched in specific conditions.These observations pave the way for the realization of top-down-made GCS devices with high scalability.Our results also imply that physical parameters like structural disorder and surface physical properties of the nanobridges,which can be in turn modified by the fabrication process,are crucial for a GCS observation,providing therefore also important insights into the physics underlying the GCS effect.
基金the Departmental Research Development Programme,Department of Physics,Savitribai Phule Pune University,India for their financial support for research work
文摘Copper selenide（Cu3Se2/thin films have been synthesized with Se as the precursor in aqueous solution by chemical bath deposition technique at room temperature.We have investigated the influence of the growth time ranging from 30 to 90 min on structural,optical and electrical properties of Cu3Se2 thin films.The as-grown film at 60 min exhibits a tetragonal structure and is（101）oriented.The maximum value of crystal size DD55 nm is attained for Cu3Se2 films grown at 60 min.The Raman spectrum reveals a pronounced peak at 259 cm 1,which is assigned to vibrational（stretching）modes from the covalent Se–Se bonds.The optical band gap energy is 1.91 to2.01 eV with growth time increased from 30 to 90 min.The scanning electron microscopy（SEM）study reveals that the grains are uniform and spread over the entire surface of the substrate of the film at 60 min.The Hall effect study reveals that the film exhibits p-type conductivity.The synthesized film showed good absorbance in the visible region which signifies that synthesized Cu3Se2 films can be suitable as a sensitized material in semiconductor sensitized solar cells.
