With the fast development of integrated circuit devices as well as batteries with high energy densities,the thermal management of electronic components is becoming increasingly crucial to maintaining their reliable op...With the fast development of integrated circuit devices as well as batteries with high energy densities,the thermal management of electronic components is becoming increasingly crucial to maintaining their reliable operations.Boron nitride nanosheets(BNNS),which have superhigh thermal conductivity along the in-plane direction while remaining electrically insulating,were widely regarded as an ideal filler for preparing high-performance polymer composites to address the‘‘thermal failure''issue.However,due to the instinctive rigidity of BNNS,the nanosheets are unable to form a tightly interfacial contact between the adjoining fillers,resulting in some micro-and nanovoids within the heat transfer pathways and severely limiting further thermal conductivity enhancement for BNNS-based composites.Herein,soft and deformable liquid metal(eutectic gallium-indium,EGaIn)nanoparticles were employed to fill the gaps between the adjacent BNNS with a rational design of mass ratios of BNNS and EGaIn,leading to a strongly synergistic effect with BNNS on thermal conductivity improvement.As a result,the composite film(BNNS:63 wt%and EGaIn:7 wt%)employing cellulose nanofibers(CNF:30 wt%)as the polymer matrix achieves superhigh thermal conductivity along the in-plane direction of up to(90.51±6.71)W·m^(-1)·K^(-1),showing the highest value among the BNNSbased composites with a bi-filler system as far as we know.Additionally,the film can work as a heat spreader for the heat dissipation of high-power light emitting diodes,outperforming tin foil in cooling efficiency.展开更多
Developing advanced thermal interface materials(TIMs)to bridge heat-generating chip and heat sink for constructing an efficient heat transfer interface is the key technology to solve the thermal management issue of hi...Developing advanced thermal interface materials(TIMs)to bridge heat-generating chip and heat sink for constructing an efficient heat transfer interface is the key technology to solve the thermal management issue of high-power semiconductor devices.Based on the ultra-high basal-plane thermal conductivity,graphene is an ideal candidate for preparing high-performance TIMs,preferably to form a vertically aligned structure so that the basal-plane of graphene is consistent with the heat transfer direction of TIM.However,the actual interfacial heat transfer efficiency of currently reported vertically aligned graphene TIMs is far from satisfactory.In addition to the fact that the thermal conductivity of the vertically aligned TIMs can be further improved,another critical factor is the limited actual contact area leading to relatively high contact thermal resistance(20-30 K mm^(2) W^(−1))of the“solid-solid”mating interface formed by the vertical graphene and the rough chip/heat sink.To solve this common problem faced by vertically aligned graphene,in this work,we combined mechanical orientation and surface modification strategy to construct a three-tiered TIM composed of mainly vertically aligned graphene in the middle and micrometer-thick liquid metal as a cap layer on upper and lower surfaces.Based on rational graphene orientation regulation in the middle tier,the resultant graphene-based TIM exhibited an ultra-high thermal conductivity of 176 W m^(−1) K^(−1).Additionally,we demonstrated that the liquid metal cap layer in contact with the chip/heat sink forms a“liquid-solid”mating interface,significantly increasing the effective heat transfer area and giving a low contact thermal con-ductivity of 4-6 K mm^(2) W^(−1) under packaging conditions.This finding provides valuable guidance for the design of high-performance TIMs based on two-dimensional materials and improves the possibility of their practical application in electronic thermal management.展开更多
The self-attraction of nanowires(NWs)would lead to NWs bunching up together when fabricated in high density and the short circuit of NW-based devices during service.However,the underlying mechanism of the self-attract...The self-attraction of nanowires(NWs)would lead to NWs bunching up together when fabricated in high density and the short circuit of NW-based devices during service.However,the underlying mechanism of the self-attraction of NWs remains debatable due to the lack of in situ characterization of the attraction.In this study,a versatile method of in situ investigating the self-attraction of NWs was developed.The attractive force between two NWs and their distance can be determined quantitatively in the process of attraction under an optical microscope,eliminating the influence of electron beam in electron microscopes.With this approach,the self-attraction of SiC NWs was investigated and a two-stage mechanism for the self-attraction was proposed.The electrostatic force between two individual SiC NWs increased as their distance decreased,and acted as the initial driving force for the attraction of NWs.SiC NWs remained in contact under van der Waals force until they separated when external force exceeded van der Waals force.The charge density and the Hamaker constant of SiC NWs were determined to be 1.9×10^(-4)C·m^(-2)and 1.56×10^(-19)J,which played an important role in the attraction of NWs.The results shed light on the mechanism of selfattraction among NWs and provide new insights into fabricating high-quality NWs and developing high-performance NW-based devices.展开更多
基金financially supported by the National Natural Science Foundation of China (Nos.52075527,5227020331 and 52102055)the National Key R&D Program of China (Nos.2017YFB0406000 and 2017YFE0128600)+12 种基金the Project of the Chinese Academy of Sciences (Nos.XDC07030100,XDA22020602,ZDKYYQ20200001 and ZDRW-CN-2019-3)CAS Youth Innovation Promotion Association (No.2020301)the Science and Technology Major Project of Ningbo (Nos.2021Z115,2021Z120,2018B10046 and 2016S1002)the Key Research and Development Program of Ningbo City (No.2022Z084)the Natural Science Foundation of Ningbo (No.2017A610010)the Foundation of State Key Laboratory of Solid lubrication (No.LSL-1912)China Postdoctoral Science Foundation (Nos.2020M681965 and2022M713243)the National Key Laboratory of Science and Technology on Advanced Composites in Special Environments (No.6142905192806)K.C.Wong Education Foundation (No.GJTD-2019-13)the Youth Fund of Chinese Academy of Sciences (No.JCPYJJ-22030)the Science and Technology Project of Zhejiang Province (No.2022C01182)Zhejiang Provincial Natural Science Foundation of China (No.LY19B010003)the 3315 Program of Ningbo。
文摘With the fast development of integrated circuit devices as well as batteries with high energy densities,the thermal management of electronic components is becoming increasingly crucial to maintaining their reliable operations.Boron nitride nanosheets(BNNS),which have superhigh thermal conductivity along the in-plane direction while remaining electrically insulating,were widely regarded as an ideal filler for preparing high-performance polymer composites to address the‘‘thermal failure''issue.However,due to the instinctive rigidity of BNNS,the nanosheets are unable to form a tightly interfacial contact between the adjoining fillers,resulting in some micro-and nanovoids within the heat transfer pathways and severely limiting further thermal conductivity enhancement for BNNS-based composites.Herein,soft and deformable liquid metal(eutectic gallium-indium,EGaIn)nanoparticles were employed to fill the gaps between the adjacent BNNS with a rational design of mass ratios of BNNS and EGaIn,leading to a strongly synergistic effect with BNNS on thermal conductivity improvement.As a result,the composite film(BNNS:63 wt%and EGaIn:7 wt%)employing cellulose nanofibers(CNF:30 wt%)as the polymer matrix achieves superhigh thermal conductivity along the in-plane direction of up to(90.51±6.71)W·m^(-1)·K^(-1),showing the highest value among the BNNSbased composites with a bi-filler system as far as we know.Additionally,the film can work as a heat spreader for the heat dissipation of high-power light emitting diodes,outperforming tin foil in cooling efficiency.
基金flnancial support by the National Natural Science Foundation of China (52102055, 5227020331, 52075527)National Key R&D Program of China (2017YFB0406000 and 2017YFE0128600)+8 种基金the Project of the Chinese Academy of Sciences (XDC07030100, XDA22020602, ZDKYYQ20200001 and ZDRW-CN-2019-3)CAS Youth Innovation Promotion Association (2020301)Science and Technology Major Project of Ningbo (2021Z120, 2021Z115, 2022Z084, 2018B10046 and 2016S1002)the Natural Science Foundation of Ningbo (2017A610010)Foundation of State Key Laboratory of Solid lubrication (LSL-1912)China Postdoctoral Science Foundation (2020M681965, 2022M713243)National Key Laboratory of Science and Technology on Advanced Composites in Special Environments (6142905192806)K.C. Wong Education Foundation (GJTD-2019-13)the 3315 Program of Ningbo for financial support
文摘Developing advanced thermal interface materials(TIMs)to bridge heat-generating chip and heat sink for constructing an efficient heat transfer interface is the key technology to solve the thermal management issue of high-power semiconductor devices.Based on the ultra-high basal-plane thermal conductivity,graphene is an ideal candidate for preparing high-performance TIMs,preferably to form a vertically aligned structure so that the basal-plane of graphene is consistent with the heat transfer direction of TIM.However,the actual interfacial heat transfer efficiency of currently reported vertically aligned graphene TIMs is far from satisfactory.In addition to the fact that the thermal conductivity of the vertically aligned TIMs can be further improved,another critical factor is the limited actual contact area leading to relatively high contact thermal resistance(20-30 K mm^(2) W^(−1))of the“solid-solid”mating interface formed by the vertical graphene and the rough chip/heat sink.To solve this common problem faced by vertically aligned graphene,in this work,we combined mechanical orientation and surface modification strategy to construct a three-tiered TIM composed of mainly vertically aligned graphene in the middle and micrometer-thick liquid metal as a cap layer on upper and lower surfaces.Based on rational graphene orientation regulation in the middle tier,the resultant graphene-based TIM exhibited an ultra-high thermal conductivity of 176 W m^(−1) K^(−1).Additionally,we demonstrated that the liquid metal cap layer in contact with the chip/heat sink forms a“liquid-solid”mating interface,significantly increasing the effective heat transfer area and giving a low contact thermal con-ductivity of 4-6 K mm^(2) W^(−1) under packaging conditions.This finding provides valuable guidance for the design of high-performance TIMs based on two-dimensional materials and improves the possibility of their practical application in electronic thermal management.
基金The authors acknowledge the financial supports from the Youth Innovation Promotion Association CAS(No.2019295)the Science and Technology Major Project of Ningbo(No.2018B10046)+2 种基金the National Key R&D Program of China(No.2018YFA0703400)the National Natural Science Foundation of China(Nos.51573201 and 52142501)Changjiang Scholars Program of Chinese Ministry of Education,the Xinghai Science Funds for Distinguished Young Scholars at Dalian University of Technology,and the Collaborative Innovation Center of Major Machine Manufacturing in Liaoning。
文摘The self-attraction of nanowires(NWs)would lead to NWs bunching up together when fabricated in high density and the short circuit of NW-based devices during service.However,the underlying mechanism of the self-attraction of NWs remains debatable due to the lack of in situ characterization of the attraction.In this study,a versatile method of in situ investigating the self-attraction of NWs was developed.The attractive force between two NWs and their distance can be determined quantitatively in the process of attraction under an optical microscope,eliminating the influence of electron beam in electron microscopes.With this approach,the self-attraction of SiC NWs was investigated and a two-stage mechanism for the self-attraction was proposed.The electrostatic force between two individual SiC NWs increased as their distance decreased,and acted as the initial driving force for the attraction of NWs.SiC NWs remained in contact under van der Waals force until they separated when external force exceeded van der Waals force.The charge density and the Hamaker constant of SiC NWs were determined to be 1.9×10^(-4)C·m^(-2)and 1.56×10^(-19)J,which played an important role in the attraction of NWs.The results shed light on the mechanism of selfattraction among NWs and provide new insights into fabricating high-quality NWs and developing high-performance NW-based devices.
