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Solution processed high performance perovskite quantum dots/ZnO phototransistors
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作者 Md Mehedi Hasan Eric Moyen +3 位作者 Jewel Kumer Saha Md Mobaidul Islam Arqum Ali Jin Jang 《Nano Research》 SCIE EI CSCD 2022年第4期3660-3666,共7页
Phototransistors that can detect visible light have been fabricated using solution processed zinc oxide channel/zirconium oxide gate insulator thin film transistors(TFTs)and room temperature synthesized perovskite qua... Phototransistors that can detect visible light have been fabricated using solution processed zinc oxide channel/zirconium oxide gate insulator thin film transistors(TFTs)and room temperature synthesized perovskite quantum dots(PeQDs)as active layer.Typical ZnO thin film transistors did not show a photocurrent under visible light illumination.However,ZnO TFTs decorated with PeQDs exhibited enhanced photocurrent upon exposure to visible light.The device had a responsivity of 567 A/W(617 A/W),a high detectivity of 6.59×10^(13)Jones(1.85×10^(14)J)and a high sensitivity of 10^(7)(10^(8))under green(blue)light at a low drain voltage of 0.1 V.The high photo-responsivity and detectivity under green light resulted from the combination of short ligands in the QDs films and the high mobility of the spray coated ZnO films.Those results are relevant for the development of low cost and low energy consumption phototransistors working in the visible range. 展开更多
关键词 ZnO thin film transistors perovskite quantum dots photo-detectors photo-transistors
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