In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),fo...In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.展开更多
Superlattice phase transformation, occurred in the solute enriched region caused by diffusion induced grainboundary migration (DIGM), was found in two kinds of diffusion couples which consist of: (1) low carbon highst...Superlattice phase transformation, occurred in the solute enriched region caused by diffusion induced grainboundary migration (DIGM), was found in two kinds of diffusion couples which consist of: (1) low carbon highstrength steel with hot dipped zinc coating, and (2) commercial pure iron with galvanized zinc coating after isothermally diffusion annealed at different temperatures (500, 560 and 580℃) with various durations. The product of thetransformation is an ordered phase with Li2 superlattice structure which was identified through the analysis by SEM,TEM and AEM. The ordered phase resulted from transformation occurred in the alloyed areas generated by DIGMand DIR The zinc content in this phase is variable, it approaches the stoichiometric composition Fe3Zn as the diffusion time is sufficiently prolonged. The mechanism of the transformation in connection with the process of DIGMand DIR was discussed. DIGM DIR and DIP (diffusion induced phase transformation) are three interrelatedprocessed originated from grain boundary diffusion.展开更多
This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed ...This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 10^(10) cm·Hz^(1/2)/W, and a minimum dark current density of 1.02 × 10^(-5) A/cm^(2).Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.展开更多
基金supported by the National Key Technologies R&D Program of China(Grant Nos.2024YFA1208904,2019YFA0705203)Major Program of the National Natural Science Foundation of China(Grant Nos.62004189,61274013)+1 种基金the Strategic Priority Research Program of the Chinese Academy of Sciences(Grant No.XDB0460000)the Research Foundation for Advanced Talents of the Chinese Academy of Sciences(Grant No.E27RBB03).
文摘In this paper,a planar junction mid-wavelength infrared(MWIR)photodetector based on an InAs/GaSb type-Ⅱsuper-lattices(T2SLs)is reported.The Intrinsic-πMN superlattices was grown by the molecular beam epitaxy(MBE),followed with a ZnS layer grown by the chemical vapor deposition(CVD).The p-type contact layer was constructed by thermal diffusion in the undoped superlattices.The Zinc atom was successfully realised into the superlattice and a PπMN T2SL structure was con-structed.Furthermore,the effects of different diffusion temperatures on the dark current performance of the devices were researched.The 50%cut-off wavelength of the photodetector is 5.26μm at 77 K with 0 V bias.The minimum dark current density is 8.67×10^(−5) A/cm^(2) and the maximum quantum efficiency of 42.5%,and the maximum detectivity reaches 3.90×10^(10) cm·Hz^(1/2)/W at 77 K.The 640×512 focal plane arrays(FPA)based on the planner junction were fabricated afterwards.The FPA achieves a noise equivalent temperature difference(NETD)of 539 mK.
文摘Superlattice phase transformation, occurred in the solute enriched region caused by diffusion induced grainboundary migration (DIGM), was found in two kinds of diffusion couples which consist of: (1) low carbon highstrength steel with hot dipped zinc coating, and (2) commercial pure iron with galvanized zinc coating after isothermally diffusion annealed at different temperatures (500, 560 and 580℃) with various durations. The product of thetransformation is an ordered phase with Li2 superlattice structure which was identified through the analysis by SEM,TEM and AEM. The ordered phase resulted from transformation occurred in the alloyed areas generated by DIGMand DIR The zinc content in this phase is variable, it approaches the stoichiometric composition Fe3Zn as the diffusion time is sufficiently prolonged. The mechanism of the transformation in connection with the process of DIGMand DIR was discussed. DIGM DIR and DIP (diffusion induced phase transformation) are three interrelatedprocessed originated from grain boundary diffusion.
文摘This paper examines GaSb short-wavelength infrared detectors employing planar PN junctions. The fabrication was based on the Zn diffusion process and the diffusion temperature was optimized. Characterization revealed a 50% cut-off wavelength of 1.73 μm, a maximum detectivity of 8.73 × 10^(10) cm·Hz^(1/2)/W, and a minimum dark current density of 1.02 × 10^(-5) A/cm^(2).Additionally, a maximum quantum efficiency of 60.3% was achieved. Subsequent optimization of fabrication enabled the realization of a 320 × 256 focal plane array that exhibited satisfactory imaging results. Remarkably, the GaSb planar detectors demonstrated potential in low-cost short wavelength infrared imaging, without requiring material epitaxy or deposition.
