针对受控高压开关中串联金属-氧化物半导体场效应晶体管(metal-oxide semiconductor field effect transistor,MOSFET)驱动复杂性与动态电压失衡问题,本文提出一种基于非隔离驱动的P沟道增强型MOSFET串联高压开关电路。通过构建二极管...针对受控高压开关中串联金属-氧化物半导体场效应晶体管(metal-oxide semiconductor field effect transistor,MOSFET)驱动复杂性与动态电压失衡问题,本文提出一种基于非隔离驱动的P沟道增强型MOSFET串联高压开关电路。通过构建二极管电位梯度屏障网络,采用单驱动源触发多管开关控制,结合瞬态电压抑制二极管(transient voltage suppression diodes,TVS)动态箝位与容性耦合机制,解决kV级应用中电压失衡问题。将该技术应用于解决碳纳米管(carbon nanotube,CNT)阴极X射线管脉冲拖尾问题的受控放电电路,实验表明:在-12 V单源驱动下可实现5只MOSFET串联电路开通,导通累计时间0.274μs;电路关断耐压达-2 kV;脉冲下降沿缩短至9.8μs。该电路结构简单、开关速度快、可靠性高,为高压快脉冲系统提供了新的解决方案。展开更多
瞬态抑制器(Transient Voltage Suppressor, TVS)是一类能将单个或连续的瞬态高电压电信号迅速抑制在安全范围内并保护与之相连电子系统的半导体器件的统称,被广泛应用于各类敏感电子系统的保护电路中。首先,结合前期研究成果,概括目前...瞬态抑制器(Transient Voltage Suppressor, TVS)是一类能将单个或连续的瞬态高电压电信号迅速抑制在安全范围内并保护与之相连电子系统的半导体器件的统称,被广泛应用于各类敏感电子系统的保护电路中。首先,结合前期研究成果,概括目前TVS器件在机载雷击与电磁脉冲防护方面的发展与技术瓶颈。其次,根据TVS器件能量等级、电压等级以及工作机理的差异,对不同TVS器件技术进行分类与总结,梳理TVS器件设计中的各类新结构与工艺创新。最后,针对未来航空航天设备更高的防护要求,从芯片材料、工艺与封装角度进行技术展望,提出可能的发展方向。展开更多
To study the electrophysiologic effects of endothelin-1 (ET-1), we used patch clamp and glass microelectrode techniques to investigate the effects of ET-1 on cardiac L-Ica, Ik and Ik2 in guinea pig ventricular myocyte...To study the electrophysiologic effects of endothelin-1 (ET-1), we used patch clamp and glass microelectrode techniques to investigate the effects of ET-1 on cardiac L-Ica, Ik and Ik2 in guinea pig ventricular myocytes. The prolongation of APD50, was induced and EADs was triggered by 50 nM ET-1 perfusion. L-lea and Ik were enhanced by various ET-1 concentration from 1 to 50 nM with dose-dependence. Their steady-state activations of L-Iea and Ik shifted left with ET-1 concentration increments. ET-1 elicited a kind of GTP- dependent inward rectifier K current having a mean conductance of 82.36±1.27 pS. The open time and close time ( both interburst intervals and burst durations ) abbreviated with ET-1 concentration increase. The results suggested that EADs -ET evoked was ascribed to the prolongation on the plateau level, which resulted from L-Ica inhancement. The ET- evoked inward rectifier K+ current should be further studied.展开更多
Infrared(IR)birefringent materials with large optical anisotropy and wide transparency range are important for efficient light manipulation in various IR optical devices.Herein,two new IR birefringent materials AMgGeS...Infrared(IR)birefringent materials with large optical anisotropy and wide transparency range are important for efficient light manipulation in various IR optical devices.Herein,two new IR birefringent materials AMgGeSe_(3)(A=Li,Na)with large optical anisotropy were rationally designed by a rigid octahedron and flexible dimer combined strategy and fabricated in experiment.The introduction of rigid[LiSe_(6)]/[NaSe_(6)]and[MgSe_(6)]octahedra effectively regulates the geometry and arrangement of the flexible[Ge2Se6]dimers,resulting in the birefringence as large as 0.334@1,064 nm in LiMgGeSe_(3) and 0.445@1,064 nm(the largest one in the reported[Ge_(2)Se_(6)]dimer-contained selenides)in NaMgGeSe_(3).Density functional theory(DFT)calculations and statistical analyses highlight the influence of polarizability anisotropy,density,arrangement of units,as well as layer distance on birefringence.The results indicate that AMgGeSe_(3)(A=Li,Na)crystals are the promising IR birefringent materials and it gives an insight into the exploration of new IR birefringent materials with large birefringence based on the clamping effect from rigid groups.展开更多
文摘瞬态抑制器(Transient Voltage Suppressor, TVS)是一类能将单个或连续的瞬态高电压电信号迅速抑制在安全范围内并保护与之相连电子系统的半导体器件的统称,被广泛应用于各类敏感电子系统的保护电路中。首先,结合前期研究成果,概括目前TVS器件在机载雷击与电磁脉冲防护方面的发展与技术瓶颈。其次,根据TVS器件能量等级、电压等级以及工作机理的差异,对不同TVS器件技术进行分类与总结,梳理TVS器件设计中的各类新结构与工艺创新。最后,针对未来航空航天设备更高的防护要求,从芯片材料、工艺与封装角度进行技术展望,提出可能的发展方向。
文摘To study the electrophysiologic effects of endothelin-1 (ET-1), we used patch clamp and glass microelectrode techniques to investigate the effects of ET-1 on cardiac L-Ica, Ik and Ik2 in guinea pig ventricular myocytes. The prolongation of APD50, was induced and EADs was triggered by 50 nM ET-1 perfusion. L-lea and Ik were enhanced by various ET-1 concentration from 1 to 50 nM with dose-dependence. Their steady-state activations of L-Iea and Ik shifted left with ET-1 concentration increments. ET-1 elicited a kind of GTP- dependent inward rectifier K current having a mean conductance of 82.36±1.27 pS. The open time and close time ( both interburst intervals and burst durations ) abbreviated with ET-1 concentration increase. The results suggested that EADs -ET evoked was ascribed to the prolongation on the plateau level, which resulted from L-Ica inhancement. The ET- evoked inward rectifier K+ current should be further studied.
基金supported by the High-level Talent Project of Xinjiang Uygur Autonomous Region(2020000039)the National Natural Science Foundation of China(52002398,61835014,51972336)the Xinjiang Key Laboratory of Electronic Information Materials and Devices(2017D04029)。
文摘Infrared(IR)birefringent materials with large optical anisotropy and wide transparency range are important for efficient light manipulation in various IR optical devices.Herein,two new IR birefringent materials AMgGeSe_(3)(A=Li,Na)with large optical anisotropy were rationally designed by a rigid octahedron and flexible dimer combined strategy and fabricated in experiment.The introduction of rigid[LiSe_(6)]/[NaSe_(6)]and[MgSe_(6)]octahedra effectively regulates the geometry and arrangement of the flexible[Ge2Se6]dimers,resulting in the birefringence as large as 0.334@1,064 nm in LiMgGeSe_(3) and 0.445@1,064 nm(the largest one in the reported[Ge_(2)Se_(6)]dimer-contained selenides)in NaMgGeSe_(3).Density functional theory(DFT)calculations and statistical analyses highlight the influence of polarizability anisotropy,density,arrangement of units,as well as layer distance on birefringence.The results indicate that AMgGeSe_(3)(A=Li,Na)crystals are the promising IR birefringent materials and it gives an insight into the exploration of new IR birefringent materials with large birefringence based on the clamping effect from rigid groups.
