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Application of Stereology on Neodymium-Doped Yttrium Aluminum Garnet (Nd∶YAG) Transparent Ceramics 被引量:1
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作者 张华山 荆敏 +4 位作者 苏春辉 张洪波 候朝霞 邵晶 宋琼 《Journal of Rare Earths》 SCIE EI CAS CSCD 2006年第5期538-542,共5页
Nd : YAG precursor powders were synthesized by homogeneous precipitation, and Nd : YAG transparent ceramics were prepared by vacuum sintering at 1700 ℃ for 5 h. The ceramic materials were characterized by light tra... Nd : YAG precursor powders were synthesized by homogeneous precipitation, and Nd : YAG transparent ceramics were prepared by vacuum sintering at 1700 ℃ for 5 h. The ceramic materials were characterized by light transmittance and field emission gun-environment scanning microscope. Using statistics and stereology theory, study was carried out on the quantitative relationships between light transmittance and stereological parameters in three-dimensional Euclidean space. It is found that the transmittance of Nd:YAG with 1 mm in thickness is about 45% and 58% in visible and near-infrared wavelength, respectively. The transmittance linearly increases with increasing equivalent sphere diameter and reaches the theoretical value of single crystal when the equivalent sphere diameter is 20μm. The transmittance decreases with the increasing of mean specific area per unit volume of grain and discrete grains, and the transmittance decreases with increasing mean free distance of grains in Nd:YAG ceramics. 展开更多
关键词 neodymium doped yttrium aluminum garnet transparent ceramics STEREOLOGY microstructure rare earths
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Synthesis of Y_2O_2S:Eu^(3+) Phosphor by Microwave Thermal Effectand Its Luminescent Properties 被引量:1
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作者 李沅英 蔡少华 戴德昌 《Journal of Rare Earths》 SCIE EI CAS CSCD 1996年第4期275-278,共4页
The phosphor Y2O2S:Eu3+ powder crystal has been synthesized by using the microwave thermal method.The data of X-ray powder diffraction showed that the phosphor structure belongs to hexagonal system with lattice parame... The phosphor Y2O2S:Eu3+ powder crystal has been synthesized by using the microwave thermal method.The data of X-ray powder diffraction showed that the phosphor structure belongs to hexagonal system with lattice parameters a=0.3785 nm,c=0.6590nm.The excitation spectrum of the phosphor is a broad band with peak at λ(ex)= 261 nm.The main emission peak at λ(em)=626nm and the other emission lines peak at 595,617 and 706 nm are assigned to transitions of the Eu3+ respectively.Under 254 nm excitation,the chromatic coordinates of phosphor are x=0.665, y=0.330.The relative luminescent intensity is about 62% compared with the standard phosphor Y2O3:Eu3+.Under 365nm excitation this phosphor gives rise to an intense red light.The phosphor particle size has a medium diameter of 7.3μm. 展开更多
关键词 PHOSPHOR Microwave thermal effect Europium doped yttrium oxysulfide
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Anodic oxidation of azo dye C.I. Acid Red 73 by the yttrium-doped Ti/SnO2-Sb electrodes 被引量:1
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作者 Li XU Zhi GUO Lishun DU 《Frontiers of Chemical Science and Engineering》 SCIE EI CAS CSCD 2013年第3期338-346,共9页
This work was conducted to study the ability of anodic oxidation of azo dye C.I. Acid Red 73 (ART3) using the yttrium-doped Ti/SnO2-Sb electrodes. The effects of Sb doping level, yttrium doping level, thermal decomp... This work was conducted to study the ability of anodic oxidation of azo dye C.I. Acid Red 73 (ART3) using the yttrium-doped Ti/SnO2-Sb electrodes. The effects of Sb doping level, yttrium doping level, thermal decomposition temperature and cycle times of dip-coating thermal decomposition on the properties of the electrodes were investigated. The results showed that the excellent electrochemical activity of Ti/SnO2-Sb-Y electrode can be achieved at a 7:1 molar ratio of Sn:Sb and thermal decomposition temperature of 550~C. Moreover when the cycle times of dip-coating and thermal decomposition were up to 10 times, the performance of the electrode tends to be stable. The Ti/SnO2-Sb electrodes doped with yttrium (0.5 tool-%) showed the most excellent electrochemical activity. In addition, the influences of operating variables, including current density, initial pH, dye concentration and support electrolyte, on the colour removal, chemical oxygen demand (COD) removal and current efficiency were also investigated. Our results confirmed that the current efficiency increased with the concentrations of dye and sodium chloride. Moreover, increasing the current density and the initial pH would reduce the current efficiency. 展开更多
关键词 SnO2-Sb yttrium doping anodic oxidation azo dyes
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Multi-level phase-change memory with ultralow power consumption and resistance drift 被引量:7
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作者 Bin Liu Kaiqi Li +5 位作者 Wanliang Liu Jian Zhou Liangcai Wu Zhitang Song Stephen R.Elliott Zhimei Sun 《Science Bulletin》 SCIE EI CSCD 2021年第21期2217-2224,M0004,共9页
By controlling the amorphous-to-crystalline relative volume,chalcogenide phase-change memory materials can provide multi-level data storage(MLS),which offers great potential for high-density storageclass memory and ne... By controlling the amorphous-to-crystalline relative volume,chalcogenide phase-change memory materials can provide multi-level data storage(MLS),which offers great potential for high-density storageclass memory and neuro-inspired computing.However,this type of MLS system suffers from high power consumption and a severe time-dependent resistance increase(‘‘drift")in the amorphous phase,which limits the number of attainable storage levels.Here,we report a new type of MLS system in yttriumdoped antimony telluride,utilizing reversible multi-level phase transitions between three states,i.e.,amorphous,metastable cubic and stable hexagonal crystalline phases,with ultralow power consumption(0.6–4.3 p J)and ultralow resistance drift for the lower two states(power-law exponent<0.007).The metastable cubic phase is stabilized by yttrium,while the evident reversible cubic-to-hexagonal transition is attributed to the sequential and directional migration of Sb atoms.Finally,the decreased heat dissipation of the material and the increase in crystallinity contribute to the overall high performance.This study opens a new way to achieve advanced multi-level phase-change memory without the need for complicated manufacturing procedures or iterative programming operations. 展开更多
关键词 Phase-change memory Multi-level storage Antimony telluride yttrium doping Power consumption Resistance drift
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