Low-dimensional hybrid organic-inorganic metal halides(OIMHs)have been extensively investigated for their structural tunability and unique optoelectronic properties.However,the synthesis of highly photoluminescent lea...Low-dimensional hybrid organic-inorganic metal halides(OIMHs)have been extensively investigated for their structural tunability and unique optoelectronic properties.However,the synthesis of highly photoluminescent lead-free OIMHs remains challenging.To address this issue,we synthesized a series of hybrid OIMHs(DETA)_(3)InCl_(6):xSb^(3+)(DETA=diethylenetriamine,x=0-15%).With Sb^(3+)doping,the photoluminescence quantum yield(PLQY)is greatly improved from 4.84%to nearly 100%.Moreover,(DETA)_(3)InCl_(6):10%Sb^(3+)single crystals exhibit strong yellow broadband emission originating from selftrapped exciton(STE)radiative recombination.Interestingly,when Sb^(3+)doping is 0.005%,the single crystal doped Sb emits white light at an excitation wavelength of 365 nm with CIE coordinates of(0.35,0.36).We also explored the effect of Sb^(3+)dopants and STE state formation by DFT calculations and ultrafast transient absorption techniques.This research provides new insights into the design of high-performance photoluminescent materials based on hybrid metal halides.展开更多
Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room tem...Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by X- ray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capaci-tance-voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electro-chemical capacitance-voltage profiler reveals that the con-centration of p-type carriers in MnxGa1-xSb is as high as 1×1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.展开更多
基金supported by the National Natural Science Foundation of China(Nos.U1738101,51974022)Fundamental Research Funds for the Central Universities,China(No.FRF-MP-20-17)。
基金supported by the National Natural Science Foundation of China(22275075)the Natural Science Foundation of Jiangxi Province(20204BCJ22015 and 20202ACBL203001)the Jiangxi Provincial Key Laboratory of Functional Molecular Materials Chemistry(20212BCD42018).
文摘Low-dimensional hybrid organic-inorganic metal halides(OIMHs)have been extensively investigated for their structural tunability and unique optoelectronic properties.However,the synthesis of highly photoluminescent lead-free OIMHs remains challenging.To address this issue,we synthesized a series of hybrid OIMHs(DETA)_(3)InCl_(6):xSb^(3+)(DETA=diethylenetriamine,x=0-15%).With Sb^(3+)doping,the photoluminescence quantum yield(PLQY)is greatly improved from 4.84%to nearly 100%.Moreover,(DETA)_(3)InCl_(6):10%Sb^(3+)single crystals exhibit strong yellow broadband emission originating from selftrapped exciton(STE)radiative recombination.Interestingly,when Sb^(3+)doping is 0.005%,the single crystal doped Sb emits white light at an excitation wavelength of 365 nm with CIE coordinates of(0.35,0.36).We also explored the effect of Sb^(3+)dopants and STE state formation by DFT calculations and ultrafast transient absorption techniques.This research provides new insights into the design of high-performance photoluminescent materials based on hybrid metal halides.
基金supported by the National Natural Science Foundation of China(Grant No.60176001)Special Funds for the Major State Basic Research Projects(Grant Nos.G20000365 and G20000683)
文摘Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by X- ray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capaci-tance-voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electro-chemical capacitance-voltage profiler reveals that the con-centration of p-type carriers in MnxGa1-xSb is as high as 1×1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors.
