Two-dimensional(2D)magnetic semiconductors have emerged as promising materials for next-generation nanoelectronic and spintronic devices,owing to their unique coupling of electronic and magnetic properties.CrSBr,a qua...Two-dimensional(2D)magnetic semiconductors have emerged as promising materials for next-generation nanoelectronic and spintronic devices,owing to their unique coupling of electronic and magnetic properties.CrSBr,a quasi-2D magnetic semiconductor,offers a versatile platform for exploring coupled electronic and magnetic phenomena in low-dimensional systems.Here,we systematically investigate the surface work function of CrSBr nanosheets using scanning Kelvin probe microscopy(SKPM),revealing a nonlinear dependence on thickness and a thermally tunable,reversible behavior.Furthermore,a CrSBr-based 2D field-effect transistor(FET)demonstrates that such thermal modulation of the work function effectively alters the Schottky barrier height,directly impacting charge injection.Density functional theory(DFT)calculations reveal the layer-and magnetism-dependent nature of the work function in few-layer CrSBr.This work highlights the importance of work function engineering in CrSBr and provides a foundation for its application in magnetoelectric coupling,spintronic devices,and van der Waals electronics.展开更多
The effect of Al incorporation on the effective work function（EWF） of TiN metal gate was systematically investigated.Metal-oxide-semiconductor（MOS） capacitors with W/TiN/Al/TiN gate stacks were used to fulfill thi...The effect of Al incorporation on the effective work function（EWF） of TiN metal gate was systematically investigated.Metal-oxide-semiconductor（MOS） capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this purpose.Different thickness ratios of Al to TiN and different post metal annealing（PMA） conditions were employed.Significant shift of work function towards to Si conduction band was observed,which was suitable for NMOS and the magnitude of shift depends on the processing conditions.展开更多
It is important to find a way to modulate the work function of TiN metal gate towards the valence band edge of Si,which can meet the lower threshold voltage requirement of p-type metal-oxide-semiconductor（MOS） trans...It is important to find a way to modulate the work function of TiN metal gate towards the valence band edge of Si,which can meet the lower threshold voltage requirement of p-type metal-oxide-semiconductor（MOS） transistor.In this work,effects of TiN thickness,post-deposition annealing（PDA）,oxygen incorporation and N concentration variation on the work function of TiN metal gate in MOS structures are systematically investigated. It can be found that the work function positively shifts at the initial stage as the thickness of the TiN layer increases and stabilizes at such a thickness.PDA at N_2 ambience with a trace of O_2 can also cause a positive shift in the work function of TiN metal gate.The same tendency can be observed when oxygen is incorporated into TiN.Finally, increasing the N concentration in TiN can also positively shift the work function.All these measures are effective in modulating the TiN metal gate so that it is more suitable for PMOS application.展开更多
基金support from the National Key Research and Development Project (Grant No. 2024YFA1408802)the Key Research and Development Program of Shaanxi (Grant No. 2025GH-YBXM-050)+7 种基金the National Natural Science Foundation of China (Grant Nos. 12204294, 62304069, 52202186, and 12104352)the China National Postdoctoral Programme for Innovative Talents (No. BX20230281)the Natural Science Basic Research Program of Shaanxi (Program No. 2023JC-XJ01)Ningxia Key Research and Development Program (Grant No. 2020BEB04042)Xidian University Specially Funded Project for Interdisciplinary Exploration (Nos. TZJH2024064 and TZJH2024053)the Fundamental Research Funds for the Central Universitiesthe Innovation Fund of Xidian Universitythe China Postdoctoral Science Foundation (Certifcate No. 2024M752520)
文摘Two-dimensional(2D)magnetic semiconductors have emerged as promising materials for next-generation nanoelectronic and spintronic devices,owing to their unique coupling of electronic and magnetic properties.CrSBr,a quasi-2D magnetic semiconductor,offers a versatile platform for exploring coupled electronic and magnetic phenomena in low-dimensional systems.Here,we systematically investigate the surface work function of CrSBr nanosheets using scanning Kelvin probe microscopy(SKPM),revealing a nonlinear dependence on thickness and a thermally tunable,reversible behavior.Furthermore,a CrSBr-based 2D field-effect transistor(FET)demonstrates that such thermal modulation of the work function effectively alters the Schottky barrier height,directly impacting charge injection.Density functional theory(DFT)calculations reveal the layer-and magnetism-dependent nature of the work function in few-layer CrSBr.This work highlights the importance of work function engineering in CrSBr and provides a foundation for its application in magnetoelectric coupling,spintronic devices,and van der Waals electronics.
基金Project supported by the Important National Science & Technology Specific Projects of China(No.2009ZX02035)the National Natural Science Foundation of China(Nos.61176091,50932001)
文摘The effect of Al incorporation on the effective work function（EWF） of TiN metal gate was systematically investigated.Metal-oxide-semiconductor（MOS） capacitors with W/TiN/Al/TiN gate stacks were used to fulfill this purpose.Different thickness ratios of Al to TiN and different post metal annealing（PMA） conditions were employed.Significant shift of work function towards to Si conduction band was observed,which was suitable for NMOS and the magnitude of shift depends on the processing conditions.
基金supported by the Important National Science & Technology Specific Projects,China(No.2009ZX02035)the National Natural Science Foundation of China(Nos.61176091,50932001)
文摘It is important to find a way to modulate the work function of TiN metal gate towards the valence band edge of Si,which can meet the lower threshold voltage requirement of p-type metal-oxide-semiconductor（MOS） transistor.In this work,effects of TiN thickness,post-deposition annealing（PDA）,oxygen incorporation and N concentration variation on the work function of TiN metal gate in MOS structures are systematically investigated. It can be found that the work function positively shifts at the initial stage as the thickness of the TiN layer increases and stabilizes at such a thickness.PDA at N_2 ambience with a trace of O_2 can also cause a positive shift in the work function of TiN metal gate.The same tendency can be observed when oxygen is incorporated into TiN.Finally, increasing the N concentration in TiN can also positively shift the work function.All these measures are effective in modulating the TiN metal gate so that it is more suitable for PMOS application.
