The analysis of cutting regularity is provided through using and comparing two typical cooling liquids. It is proved that cutting regularity is greatly affected by cooling liquid＇s washing ability. Discharge characte...The analysis of cutting regularity is provided through using and comparing two typical cooling liquids. It is proved that cutting regularity is greatly affected by cooling liquid＇s washing ability. Discharge characteristics and theoretic analysis between two electrodes are also discussed based on discharge waveform. By using composite cooling liquid which has strong washing ability, the efficiency in the first stable cutting phase has reached more than 200 mm^2/min, and the roughness of the surface has reached Ra〈0.8 μm after the fourth cutting with more than 50 mm^2/min average cutting efficiency. It is pointed out that cutting situation of the wire cut electrical discharge machine with high wire traveling speed （HSWEDM） is better than the wire cut electrical discharge machine with low wire traveling speed （LSWEDM） in the condition of improving the cooling liquid washing ability. The machining indices of HSWEDM will be increased remarkably by using the composite cooling liquid.展开更多
The machine,a silver medal winnerfrom the state,is produced by theChangfeng Machinery General Factory.The products have been sold in the UK,Poland,Australia,Thailand,Singapore,
Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut ...Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed.展开更多
The surface damage and the damage depth in wire-cut silicon wafers and inner-diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X-ray diffr...The surface damage and the damage depth in wire-cut silicon wafers and inner-diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X-ray diffractometer. The results show that the surface of wire-cut silicon wafers is rougher than that of ID-cut silicon wafers and the surface damage in wire-cut silicon wafers is more serious than that in ID-cut silicon wafers, while the damage depth in wire-cut silicon wafers is smaller than that in ID-cut silicon wafers. The possible reasons for the generation of surface damage in wire-cut silicon wafers were also discussed.展开更多
The advantages, such as a small cutting force, narrow kerf and little material waste make wire saw cut- ting suitable for machining precious materials like SiC, Si monocrystal and a variety of gem. As regards wire saw...The advantages, such as a small cutting force, narrow kerf and little material waste make wire saw cut- ting suitable for machining precious materials like SiC, Si monocrystal and a variety of gem. As regards wire saw cutting fo wafer, however, in traditional wire saw cutting process, the cutting efficiency is low, the wear of wire saw is badly, the surface roughness of wafer is poor etc, which have a seriously impact on the cutting process stability and the use of wafers. Ultrasonic-assisted machining method is very suitable for processing a variety of non-conduc- tive hard and brittle materials, glass, ceramics, quartz, silicon, precious stones and diamonds, etc. In this paper, the force model of ultrusonic-assisted wire saw cutting of SiC monocrystal wafer, based on the kinematic and experi- mental analysis were established. The single factor and orthogonal experimental scheme for different processing pa- rameters such as wire saw speed, part rotation speed of and part feed rate, were carried out in traditional wire saw and ultrasonic-assisted wire saw cutting process. The multiple linear regression method is used to establish the static model among the cutting force, processing parameters and ultrasonic vibration parameters, and the model signifi- cance is verified. The results show, as regards ultrasonic-assisted wire saw cutting of SiC monicrystal wafer, both the tangential and normal cutting forces can reduce about 24. 5%-36% and 36. 6%-40%.展开更多
On the tasis of study in the mathematical model of 3-dimensional ruled surface (RS),this paper introduces a new concept of distance paramcter (DP) and also puts forward that themethod of modeling a RS depends on not o...On the tasis of study in the mathematical model of 3-dimensional ruled surface (RS),this paper introduces a new concept of distance paramcter (DP) and also puts forward that themethod of modeling a RS depends on not only two boundary curves but also DP. According toabove theory, the formulas to calculate corresponding point coordinates to any kind of top and bot-tom profile of a workpiece and formulas to calcuate the maximum inclination angle of ruling linehave been obtained. Then a different top and bottom RS mathining method including profile withline-are combination as well as parametric curves has been achieved by 4-axes simultancous con-trol programming proposed.展开更多
基金Provincial Key Laboratory of Precision and Micro-Manufacturing Technology of Jiangsu,China(No.Z0601-052-02).
文摘The analysis of cutting regularity is provided through using and comparing two typical cooling liquids. It is proved that cutting regularity is greatly affected by cooling liquid＇s washing ability. Discharge characteristics and theoretic analysis between two electrodes are also discussed based on discharge waveform. By using composite cooling liquid which has strong washing ability, the efficiency in the first stable cutting phase has reached more than 200 mm^2/min, and the roughness of the surface has reached Ra〈0.8 μm after the fourth cutting with more than 50 mm^2/min average cutting efficiency. It is pointed out that cutting situation of the wire cut electrical discharge machine with high wire traveling speed （HSWEDM） is better than the wire cut electrical discharge machine with low wire traveling speed （LSWEDM） in the condition of improving the cooling liquid washing ability. The machining indices of HSWEDM will be increased remarkably by using the composite cooling liquid.
文摘The machine,a silver medal winnerfrom the state,is produced by theChangfeng Machinery General Factory.The products have been sold in the UK,Poland,Australia,Thailand,Singapore,
文摘Texturing of diamond wire cut wafers using a standard wafer etch process chemistry has always been a challenge in solar cell manufacturing industry. This is due to the change in surface morphology of diamond wire cut wafers and the abundant presence of amorphous silicon content, which are introduced from wafer manufacturing industry during sawing of multi-crystalline wafers using ultra-thin diamond wires. The industry standard texturing process for multi-crystalline wafers cannot deliver a homogeneous etched silicon surface, thereby requiring an additive compound, which acts like a surfactant in the acidic etch bath to enhance the texturing quality on diamond wire cut wafers. Black silicon wafers on the other hand require completely a different process chemistry and are normally textured using a metal catalyst assisted etching technique or by plasma reactive ion etching technique. In this paper, various challenges associated with cell processing steps using diamond wire cut and black silicon wafers along with cell electrical results using each of these wafer types are discussed.
文摘The surface damage and the damage depth in wire-cut silicon wafers and inner-diameter (ID) cut silicon wafers were studied by means of thickness meter, scanning electron microscopy (SEM) and double crystal X-ray diffractometer. The results show that the surface of wire-cut silicon wafers is rougher than that of ID-cut silicon wafers and the surface damage in wire-cut silicon wafers is more serious than that in ID-cut silicon wafers, while the damage depth in wire-cut silicon wafers is smaller than that in ID-cut silicon wafers. The possible reasons for the generation of surface damage in wire-cut silicon wafers were also discussed.
基金supported by National Natural Science Foundation of China under Grant No.51175420Shaanxi Province Education Office under Grant No.11JK0849/11JS074
文摘The advantages, such as a small cutting force, narrow kerf and little material waste make wire saw cut- ting suitable for machining precious materials like SiC, Si monocrystal and a variety of gem. As regards wire saw cutting fo wafer, however, in traditional wire saw cutting process, the cutting efficiency is low, the wear of wire saw is badly, the surface roughness of wafer is poor etc, which have a seriously impact on the cutting process stability and the use of wafers. Ultrasonic-assisted machining method is very suitable for processing a variety of non-conduc- tive hard and brittle materials, glass, ceramics, quartz, silicon, precious stones and diamonds, etc. In this paper, the force model of ultrusonic-assisted wire saw cutting of SiC monocrystal wafer, based on the kinematic and experi- mental analysis were established. The single factor and orthogonal experimental scheme for different processing pa- rameters such as wire saw speed, part rotation speed of and part feed rate, were carried out in traditional wire saw and ultrasonic-assisted wire saw cutting process. The multiple linear regression method is used to establish the static model among the cutting force, processing parameters and ultrasonic vibration parameters, and the model signifi- cance is verified. The results show, as regards ultrasonic-assisted wire saw cutting of SiC monicrystal wafer, both the tangential and normal cutting forces can reduce about 24. 5%-36% and 36. 6%-40%.
文摘On the tasis of study in the mathematical model of 3-dimensional ruled surface (RS),this paper introduces a new concept of distance paramcter (DP) and also puts forward that themethod of modeling a RS depends on not only two boundary curves but also DP. According toabove theory, the formulas to calculate corresponding point coordinates to any kind of top and bot-tom profile of a workpiece and formulas to calcuate the maximum inclination angle of ruling linehave been obtained. Then a different top and bottom RS mathining method including profile withline-are combination as well as parametric curves has been achieved by 4-axes simultancous con-trol programming proposed.
