This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves（HPMs） through the injection approach.The dependences of the mi...This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves（HPMs） through the injection approach.The dependences of the microwave damage power,P,and the absorbed energy,E,required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method.A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out.By means of a two-dimensional simulator,ISE-TCAD,the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively.The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different,while only one hot spot exists under the injection of dc pulses.The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy,respectively.The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.展开更多
A new method for the determination of effective flange width under uniform load on simply supported box girder bridges considering shear lag effect is proposed in this paper. Based on the Symplectic Elasticity method,...A new method for the determination of effective flange width under uniform load on simply supported box girder bridges considering shear lag effect is proposed in this paper. Based on the Symplectic Elasticity method, the flange slab of the box girder is simplified into a plane stress plate. Using equilibrium conditions of the plates, the Hamilton dual equations for top plate element is established. The analytical formulas of each plate element considering shear lag effect are derived. The closed polynomial effective width expression of flange slab under uniform load on the whole span length has been obtained. Through examples using the finite element method, the results obtained by the proposed method are examined and the accuracy of the proposed method is verified.展开更多
A group of competitive people escaping through an exit could lead to the formation of a deadlock, which significantly increases the evacuation time. Such a phenomenon is called the faster-is-slower effect（FIS） and i...A group of competitive people escaping through an exit could lead to the formation of a deadlock, which significantly increases the evacuation time. Such a phenomenon is called the faster-is-slower effect（FIS） and it has been experimentally verified in different systems of particles flowing through an opening. In this paper, the numerical simulation based on discrete element method（DEM） is adopted to study a group of highly competitive people through an exit of varying widths. The FIS effect is observed for a narrow exit whilst it is not observed for the exit wide enough to accommodate two people through it side-by-side. Experimental validation of such a phenomenon with humans is difficult due to ethical issues. The mouse is a kind of self-driven and soft-body creature and it exhibits selfish behaviour under stressed conditions.Particles flowing through an opening in different systems, such as pedestrian flow, animal flow, silo flow, etc. have similar characteristics. Therefore, experimental study is conducted by driving mice to escape through an exit of different widths at varying levels of stimulus. The escape time through a narrow exit（i.e., 2 cm） increases obviously with the increase of stimulus level but it is quite opposite to a wider exit（i.e., 4 cm）. The FIS effect is avoided for an exit wide enough to accommodate two mice passing through it side-by-side. The study illustrates that FIF effect could be effectively prevented for an exit when its width is twice the size of particles.展开更多
The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential vale...The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.展开更多
In this paper,the nature and origin of single event effects(SEE) are studied by injecting laser pulses into different circuit blocks,combining with analysis to map pulse width modulators circuitry in the microchip die...In this paper,the nature and origin of single event effects(SEE) are studied by injecting laser pulses into different circuit blocks,combining with analysis to map pulse width modulators circuitry in the microchip die.A time-domain error-identification method is used in the temporal characteristic analysis of SEE.SEE signatures of different injection times are compared.More serious SEE are observed when the laser shot occurs on a rising edge of the device output for blocks of the error amplifier,current sense comparator,and T and SR latches.展开更多
Effects of tie beam length, width and overlap stress on settlement of foundations have been investigated. In this investigation square concrete footings have been used with dimensions (B × B × d) where (d) i...Effects of tie beam length, width and overlap stress on settlement of foundations have been investigated. In this investigation square concrete footings have been used with dimensions (B × B × d) where (d) is footing depth and (B) is footing width (1, 1.5,2 m). Width of tie beam (b) has been taken equal to 0.25, 0.30, 0.40, 0.50 and 0.75 (m). Tie beam length (L) has been taken varying from B till 3B with same footing depth = 0.50 m. Effect of overlap stress on settlement as well as effect of tie beam width and length on settlement has been determined. Also, the efficiency of tie beam length and width has been obtained. An equation is presented to compute the overlap stress zone in case of existing tie beam. It is found that the settlement increases with increasing the length of tie beam which is clear after the effect of the overlap stresses zone. The width of overlap stress zone case of existing tie beam has been found to be equal to (1.6 -1.75) B. The settlement of footings decreases with increasing tie beam width. It is found that the settlement after the effect of the overlap stress zone increases with increasing the length of tie beam.展开更多
A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of ...A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves （HPM） is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.展开更多
基金Project supported by the National Natural Science Foundation of China (Grant No. 60776034)
文摘This paper presents a theoretical study of the pulse-width effects on the damage process of a typical bipolar transistor caused by high power microwaves（HPMs） through the injection approach.The dependences of the microwave damage power,P,and the absorbed energy,E,required to cause the device failure on the pulse width τ are obtained in the nanosecond region by utilizing the curve fitting method.A comparison of the microwave pulse damage data and the existing dc pulse damage data for the same transistor is carried out.By means of a two-dimensional simulator,ISE-TCAD,the internal damage processes of the device caused by microwave voltage signals and dc pulse voltage signals are analyzed comparatively.The simulation results suggest that the temperature-rising positions of the device induced by the microwaves in the negative and positive half periods are different,while only one hot spot exists under the injection of dc pulses.The results demonstrate that the microwave damage power threshold and the absorbed energy must exceed the dc pulse power threshold and the absorbed energy,respectively.The dc pulse damage data may be useful as a lower bound for microwave pulse damage data.
基金supported by a grant from the Science and Technology Bureau of Jilin Province,China (No.20050531)
文摘A new method for the determination of effective flange width under uniform load on simply supported box girder bridges considering shear lag effect is proposed in this paper. Based on the Symplectic Elasticity method, the flange slab of the box girder is simplified into a plane stress plate. Using equilibrium conditions of the plates, the Hamilton dual equations for top plate element is established. The analytical formulas of each plate element considering shear lag effect are derived. The closed polynomial effective width expression of flange slab under uniform load on the whole span length has been obtained. Through examples using the finite element method, the results obtained by the proposed method are examined and the accuracy of the proposed method is verified.
基金supported by the National Natural Science Foundation of China(Grant Nos.51578464 and 71473207)China Fundamental Research Funds for Central Universities(Grant No.2682016cx082)
文摘A group of competitive people escaping through an exit could lead to the formation of a deadlock, which significantly increases the evacuation time. Such a phenomenon is called the faster-is-slower effect（FIS） and it has been experimentally verified in different systems of particles flowing through an opening. In this paper, the numerical simulation based on discrete element method（DEM） is adopted to study a group of highly competitive people through an exit of varying widths. The FIS effect is observed for a narrow exit whilst it is not observed for the exit wide enough to accommodate two people through it side-by-side. Experimental validation of such a phenomenon with humans is difficult due to ethical issues. The mouse is a kind of self-driven and soft-body creature and it exhibits selfish behaviour under stressed conditions.Particles flowing through an opening in different systems, such as pedestrian flow, animal flow, silo flow, etc. have similar characteristics. Therefore, experimental study is conducted by driving mice to escape through an exit of different widths at varying levels of stimulus. The escape time through a narrow exit（i.e., 2 cm） increases obviously with the increase of stimulus level but it is quite opposite to a wider exit（i.e., 4 cm）. The FIS effect is avoided for an exit wide enough to accommodate two mice passing through it side-by-side. The study illustrates that FIF effect could be effectively prevented for an exit when its width is twice the size of particles.
文摘The effect of the valence band tail width on the open circuit voltage of P3HT：PCBM bulk heterojunction solar cell is investigated by using the AMPS-1D computer program. An effective medium model with exponential valence and conduction band tail states is used to simulate the photovoltaic cell. The simulation result shows that the open circuit voltage depends Iinearly on the logarithm of the generation rate and the slope depends on the width of the valence band tail. The open circuit voltage decreases with the increasing width of the band tail. The dark and light ideality factors increase with the width of the valence band tail.
基金supported by the National Basic Research Program of China(No.613224)
文摘In this paper,the nature and origin of single event effects(SEE) are studied by injecting laser pulses into different circuit blocks,combining with analysis to map pulse width modulators circuitry in the microchip die.A time-domain error-identification method is used in the temporal characteristic analysis of SEE.SEE signatures of different injection times are compared.More serious SEE are observed when the laser shot occurs on a rising edge of the device output for blocks of the error amplifier,current sense comparator,and T and SR latches.
文摘Effects of tie beam length, width and overlap stress on settlement of foundations have been investigated. In this investigation square concrete footings have been used with dimensions (B × B × d) where (d) is footing depth and (B) is footing width (1, 1.5,2 m). Width of tie beam (b) has been taken equal to 0.25, 0.30, 0.40, 0.50 and 0.75 (m). Tie beam length (L) has been taken varying from B till 3B with same footing depth = 0.50 m. Effect of overlap stress on settlement as well as effect of tie beam width and length on settlement has been determined. Also, the efficiency of tie beam length and width has been obtained. An equation is presented to compute the overlap stress zone in case of existing tie beam. It is found that the settlement increases with increasing the length of tie beam which is clear after the effect of the overlap stresses zone. The width of overlap stress zone case of existing tie beam has been found to be equal to (1.6 -1.75) B. The settlement of footings decreases with increasing tie beam width. It is found that the settlement after the effect of the overlap stress zone increases with increasing the length of tie beam.
文摘A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves （HPM） is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.
