In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB a...In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB and a maximum on-chip output power of 8.2 dBm are demonstrated upon 1480 nm bidirectional pumping.Due to the improved optical mode field distribution within the active erbium-doped lithium niobate film and the mode overlap ratio between the pump and signal sources,a 15% high conversion efficiency can be achieved at a modest pump power of 45 mW.Furthermore,the noise figure of the amplifier can be maintained below 6 dB for low-input-signal power levels.Compared to state-of-the-art erbium-doped waveguide amplifiers(EDWAs),this heterogeneously integrated device shows superior gain performance at the desired optical C-band while avoiding the complex plasma etching process of lithium niobate,providing an inspirative solution for power compensation in the optical telecommunications.展开更多
基金National Key Research and Development Program of China(2023YFB2805100)Natural Science Foundation of Guangdong Province(2023A1515110068)National Natural Science Foundation of China(62475296).
文摘In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB and a maximum on-chip output power of 8.2 dBm are demonstrated upon 1480 nm bidirectional pumping.Due to the improved optical mode field distribution within the active erbium-doped lithium niobate film and the mode overlap ratio between the pump and signal sources,a 15% high conversion efficiency can be achieved at a modest pump power of 45 mW.Furthermore,the noise figure of the amplifier can be maintained below 6 dB for low-input-signal power levels.Compared to state-of-the-art erbium-doped waveguide amplifiers(EDWAs),this heterogeneously integrated device shows superior gain performance at the desired optical C-band while avoiding the complex plasma etching process of lithium niobate,providing an inspirative solution for power compensation in the optical telecommunications.
