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Supercontinuum Generation in Lithium Niobate Ridge Waveguides Fabricated by Proton Exchange and Ion Beam Enhanced Etching 被引量:1
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作者 Bing-Xi Xiang Lei Wang +3 位作者 Yu-Jie Ma Li Yu Huang-Pu Han Shuang-Chen Ruan 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第2期34-38,共5页
We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths (around 800hm). The waveguides are fabricated by a combination of MeV co... We report on the fabrication of the lO-mm-long lithium niobate ridge waveguide and its supercontinuum gen- eration at near-visible wavelengths (around 800hm). The waveguides are fabricated by a combination of MeV copper ion implantation followed by wet etching in a proton exchanged lithium niobate planar waveguide. Using a mode-locked Ti:sapphire laser with a central wavelength of 800nm, the generated broadest supereontinuum through the ridge waveguides spans 302 nm (at -30 dB points), from 693 to 995 nm. Temporal coherence proper- ties of the supercontinuum are experimentally studied by a Michelson interferometer and the coherence length of the broadest supercontinuum is measured to be 5.2 μm. Our results offer potential for a compact and integrated supercontinuum source for applications including bio-imaging, spectroscopy and optical communication. 展开更多
关键词 LENGTH Supercontinuum Generation in Lithium Niobate Ridge waveguides Fabricated by Proton Exchange and Ion Beam Enhanced etching
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A 45-channel 100 GHz AWG based on Si nanowire waveguides
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作者 李凯丽 张家顺 +6 位作者 安俊明 李建光 王亮亮 王玥 吴远大 尹小杰 胡雄伟 《Optoelectronics Letters》 EI 2017年第3期161-164,共4页
A 45-channel 100 GHz arrayed waveguide grating(AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that t... A 45-channel 100 GHz arrayed waveguide grating(AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about-23 dB. The device is fabricated on silicon-on-insulator(SOI) substrate by deep ultraviolet lithography(DUV) and inductively coupled plasma(ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of-8 dB. 展开更多
关键词 crosstalk waveguide ultraviolet lithography spacing inductively grating etching insertion insulator
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Polarization Analysis of an Asymmetrically Etched Rib Waveguide Coupler for Sensing Applications 被引量:1
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作者 Malathi SATHISH Srinivas TALABATTULA 《Photonic Sensors》 SCIE EI CAS 2013年第2期178-183,共6页
Deeply etched rib waveguides on silicon on insulator platform were not addressed well in research publications. We have analyzed single mode condition and polarization independence of a deeply etched rib waveguide (D... Deeply etched rib waveguides on silicon on insulator platform were not addressed well in research publications. We have analyzed single mode condition and polarization independence of a deeply etched rib waveguide (DE-RW) structure from biosensing perspective. With this rib structure, an asymmetrically etched integrated optic directional coupler has been numerically modeled to have the same coupling length for quasi- TE and TM modes. The coupling coefficients with the glucose solution as an upper cladding were calculated using a full vector mode solver, and the bulk refractive index sensitivity of the sensor was found as 28.305 × 10^-2/RIU for a fundamental quasi-TE mode. 展开更多
关键词 Silicon on insulator (SOI) deeply etched rib waveguide asymmetrically etched directional coupler BIOSENSOR
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1.3-μm 1×4 MMI coupler based on shallow-etched InP ridge waveguides
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作者 郭菲 陆丹 +3 位作者 张瑞康 王宝军 张希林 吉晨 《Journal of Semiconductors》 EI CAS CSCD 2014年第2期82-85,共4页
1.3-μm 1 × 4 MM1 coupler is designed and fabricated on an InP substrate based on a shallow etched waveguide structure. Tapered input/output waveguides and a bending waveguide design are adopted and applied in th... 1.3-μm 1 × 4 MM1 coupler is designed and fabricated on an InP substrate based on a shallow etched waveguide structure. Tapered input/output waveguides and a bending waveguide design are adopted and applied in the device to optimize the performance. The average excess losses of the 1 × 4 MMI coupler per channel are 2.8, 1.7, 2.9, and 2.9 dB, respectively. The smallest excess loss can be lower than 0.5 dB in the 40-nm spectrum bandwidth. The average uniformity between the four channels of the MMI coupler is 1.3 dB, while the smallest uniformity is only 0.4 dB. 展开更多
关键词 MMI shallow etched waveguide beam propagation method
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Reactive ion etching of Ti-diffused LiNbO_3 slab waveguides
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作者 吴建杰 李金洋 +1 位作者 要彦清 祁志美 《Journal of Semiconductors》 EI CAS CSCD 2013年第8期188-192,共5页
Reactive ion etching(RIE) of LiNbO_3(LN) in SF_6 plasma atmosphere was studied for optimizing the preparation conditions for LN ridge waveguides.The samples to be etched are Ti-diffused LN slab waveguides overlaid... Reactive ion etching(RIE) of LiNbO_3(LN) in SF_6 plasma atmosphere was studied for optimizing the preparation conditions for LN ridge waveguides.The samples to be etched are Ti-diffused LN slab waveguides overlaid with a chromium film mask that has a Mach-Zehnder interferometer(MZI) array pattern.The experimental results indicate that the LN-etching rate(R_(LN)) and the Cr-etching rate(R_(Cr)) as well as the rate ratio R_(LN)/R_(Cr) increase with either increasing the radio-frequency(RF) power at a given SF_6 flow rate or increasing the SF_6 flow rate at a fixed RF power.The maximum values of R_(LN) = 43.2 nm/min and R_(LN)/R_(Cr) = 3.27 were achieved with 300 W RF power and 40 sccm SF_6 flow.When the SF_6 flow rate exceeds 40 sccm,an increase in the flow rate causes the etching rates and the rate ratio to decrease.The scanning electron microscope images of the LN ridge prepared after~20 min etching show that the ridge height is 680 nm and the sidewall slope angle is about 60°. 展开更多
关键词 reactive ion etching Ti-diffused LiNbO_3 slab waveguide optimal etching parameters ridge waveguide
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