In the field of short-range optical interconnects,the development of low-power-consumption,ultrawideband on-chip optical waveguide amplifiers is of critical importance.Central to this advancement is the creation of ho...In the field of short-range optical interconnects,the development of low-power-consumption,ultrawideband on-chip optical waveguide amplifiers is of critical importance.Central to this advancement is the creation of host materials that require low pump power and provide ultrabroadband emission capabilities.We introduce a tri-doped lanthanum aluminate glass(composition:5Er_(2)O_(3)-5Yb_(2)O_(3)-0.2Tm_(2)O_(3)-43.8La_(2)O_(3)-46Al_(2)O_(3)),which exhibits exceptional near-infrared(NIR)luminescence intensity,significantly outperforming other bands by 3 orders of magnitude.This glass can achieve an ultrawideband NIR gain spanning 478 nm,from 1510 to 1988 nm.Notably,the glass achieves positive optical gain with a low population inversion threshold(P>0.2),highlighting its efficiency and low-power consumption.The high glass transition temperature(Tg∼842°C)and large temperature difference(ΔT∼120°C)between Tg and the onset of crystallization(Tx)indicate excellent thermal stability,which is crucial for producing high-quality amorphous films for on-chip amplifiers.This research examines the unique energy levels and spectral properties of the Er^(3+)-Yb^(3+)-Tm^(3+) tri-doped glass,assessing its potential for use in ultrawideband on-chip optical waveguide amplifiers.This work lays the groundwork for low-power,ultrabroadband on-chip waveguide amplifiers,offering new avenues for short-range optical interconnect systems.展开更多
A spectral numerical analysis method to analyze the Er-doped waveguide amplifiers(EDWA) in wavelength division multiplexing is presented. This model is based on finite difference beam propagation method modified by Do...A spectral numerical analysis method to analyze the Er-doped waveguide amplifiers(EDWA) in wavelength division multiplexing is presented. This model is based on finite difference beam propagation method modified by Douglas scheme, which can efficiently reduce the truncation error and time consumption. By superposing the Lorentzian function for the experimental curves, the spectral properties of EDWA can be investigated. Results show that the pump efficiency of EDWA pumped at 980nm is higher than that at 1480nm. Meanwhile, by rationally increasing the pump length and the erbium concentration, larger signal gains can be acquired. Taking account of the up-conversion and cross-relaxation effects of cooperation, the spectrum analysis of highly doped EDWA is carried out over a wider frequency band.展开更多
In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB a...In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB and a maximum on-chip output power of 8.2 dBm are demonstrated upon 1480 nm bidirectional pumping.Due to the improved optical mode field distribution within the active erbium-doped lithium niobate film and the mode overlap ratio between the pump and signal sources,a 15% high conversion efficiency can be achieved at a modest pump power of 45 mW.Furthermore,the noise figure of the amplifier can be maintained below 6 dB for low-input-signal power levels.Compared to state-of-the-art erbium-doped waveguide amplifiers(EDWAs),this heterogeneously integrated device shows superior gain performance at the desired optical C-band while avoiding the complex plasma etching process of lithium niobate,providing an inspirative solution for power compensation in the optical telecommunications.展开更多
Optical waveguide amplifiers are essential devices in integrated optical systems,with their gain bandwidths directly influencing the operating wavelengths of optical circuits.Previous Er^(3+)-doped polymer optical wav...Optical waveguide amplifiers are essential devices in integrated optical systems,with their gain bandwidths directly influencing the operating wavelengths of optical circuits.Previous Er^(3+)-doped polymer optical waveguide amplifiers have been limited to amplifying signals within the C-band.To achieve broadband polymer optical waveguide amplification,we propose the use of nanocrystals with low crystal field symmetry to extend the working bandwidth.Our approach utilizes LiYF_(4):Yb,Er nanoparticles embedded in poly(methyl methacrylate)as the gain medium,enabling signal amplification from most of the S-band to the whole(C+L)band.The low crystal field symmetry of the LiYF_(4)host significantly splits the^(4)I_(13/2)and^(4)I_(15/2)levels of Er^(3+)ions owing to the crystal field effect,facilitating broadband down-conversion luminescence under 980-nm excitation.Furthermore,a fluorescence kinetic analysis confirms that the broadband luminescence of Er^(3+)arises from significant energy-level splitting caused by the crystal field effect.Under 980-nm excitation,the amplifiers exhibited relative gains of approximately 12.6 dB at 1535 nm,7.4 dB at 1480 nm,and 3.7 dB at 1610 nm.The Er^(3+)-doped broadband polymer optical waveguide amplifier was successfully prepared.展开更多
Miniaturized erbium-doped waveguide amplifiers attracted great interests in recent decades due to their high gain-efficiency and function-scalability in the telecom C-band.In this work,an erbium-doped thin film lithiu...Miniaturized erbium-doped waveguide amplifiers attracted great interests in recent decades due to their high gain-efficiency and function-scalability in the telecom C-band.In this work,an erbium-doped thin film lithium niobate waveguide amplifier achieving>10 dB off-chip(fiber-to-fiber)net gain and>20 mW fiber-output amplified power is demonstrated,thanks to the low-propagation-loss waveguides and robust waveguide edge-couplers prepared by the photolithography assisted chemomechanical etching technique.Systematic investigation on the fabricated waveguide amplifiers reveals remarkable optical gain around the peak wavelength of 1532 nm as well as the low fiber-coupling loss of-1.2 dB/facet.A fiber Bragg-grating based waveguide laser is further demonstrated using the fabricated waveguide amplifier as the external gain chip,which generates>2 mW off-chip power continuous-wave lasing around the gain peak at 1532 nm.The unambiguous demonstration of fiber-to-fiber net gain of the erbium-doped thinfilm lithium niobate(TFLN)waveguide amplifier as well as its external gain chip application will benefit diverse fields demanding scalable gain elements with highspeed tunability.展开更多
Progress in rare earth doped planar glass waveguide devices has been significant over the past few years. The history and applications of these devices are reviewed.
A series of 2,5-diaminoterephthalates with a simple structure were synthesized through one-step reaction, and their bar-shaped single crystals with a large size and a smooth surface have been obtained via the solvent-...A series of 2,5-diaminoterephthalates with a simple structure were synthesized through one-step reaction, and their bar-shaped single crystals with a large size and a smooth surface have been obtained via the solvent-evaporation method. These crystals exhibit bright emission with fluorescence quantum yields higher than 0.2. They display the waveguide property, and low optical loss coefficients for waveguide have been determined for the crystal of one compound. In addition, the crystal can cause linear polarization of the light emitted from it, with a high polarization contrast of 0.70. Most importantly, these crystals can realize amplified spontaneous emission （ASE）, including the red ASE, with appreciable energy thresholds of 72-198 kW/cm^2 and high gain coefficients, which suggests the potential of these crystals for the application in organic solid-state lasers.展开更多
Using transmission electron microscopy （TEM） and x-ray diffraction analysis, we have studied the structural and morphological evolution of highly Er/Yb co-doped A1203 films in the temperature range from 600℃-900℃....Using transmission electron microscopy （TEM） and x-ray diffraction analysis, we have studied the structural and morphological evolution of highly Er/Yb co-doped A1203 films in the temperature range from 600℃-900℃. By comparison with TEM observation, the annealing behaviours of photoluminescence （PL） emission and optical loss were found to have relation to the structure and morphology. The increase of PL intensity and optical loss above 800℃ might result from the crystallization of amorphous Al2O3 films. Based on the study on the structure and morphology, a rate equation propagation model of a multilevel system was used to calculate the optical gains of Er-doped Al2O3 planar waveguide amplifiers involving the variation of PL efficiency and optical loss with annealing temperature. It was found that the amplifiers had an optimized optical gain at the temperature corresponding to the minimum of optical loss, rather than at the temperature corresponding to the maximum of PL efficiency, suggesting that the optical loss is a key factor for determining the optical gain of an Er-doped Al2O3 planar waveguide amplifier.展开更多
On-chip microlasers and waveguide amplifiers offer promising applications in optical communication,sensing,and photonic computing,presenting efficient,compact,and scalable light source solutions for integrated photoni...On-chip microlasers and waveguide amplifiers offer promising applications in optical communication,sensing,and photonic computing,presenting efficient,compact,and scalable light source solutions for integrated photonics systems.We demonstrated a low-threshold on-chip microdisk resonator laser and a high-gain optical waveguide amplifier on thin-film erbium-doped tantalum pentoxide(Er:Ta_(2)O_(5)).The fabricated Er:Ta_(2)O_(5) microdisk microlaser achieved a low threshold of 225μW,and the fabricated Er:Ta_(2)O_(5) waveguide amplifier achieved an on-chip gain of 8.8 dB/cm.These results demonstrate that active functional high-performance integrated photonic devices can be realized on the thin-film Ta_(2)O_(5) platform.展开更多
This paper analyses bright and dark spatial self-similar waves propagation and collision in graded-index nonlinear waveguide amplifiers with self-focusing and self-defocusing Kerr nonlinearities. It finds an appropria...This paper analyses bright and dark spatial self-similar waves propagation and collision in graded-index nonlinear waveguide amplifiers with self-focusing and self-defocusing Kerr nonlinearities. It finds an appropriate transformation for the first time such that the nonlinear Schrodinger equation （NLSE） with varying coefficients transform into standard NLSE. It obtains one-solitonlike, two-solitonlike and multi-solitonlike self-similar wave solutions by using the transformation. Furthermore, it analyses the features of the self-similar waves and their collisions.展开更多
In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally fallin...In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.展开更多
A new '(?)' type of wideband erbium-ytterbium co-doped phosphate glass waveguide amplifier integrated with medium thin film filter is proposed, Average gain about 15.5dB between 1530nm and 1570nm with gain dif...A new '(?)' type of wideband erbium-ytterbium co-doped phosphate glass waveguide amplifier integrated with medium thin film filter is proposed, Average gain about 15.5dB between 1530nm and 1570nm with gain difference of below 2 dB is obtained.展开更多
1 Results Rare earth doped waveguide amplifiers and devices have been demonstrated in silica, crystal and other glass hosts. These rare earth doped optical waveguide devices are based on inorganic materials. Many proc...1 Results Rare earth doped waveguide amplifiers and devices have been demonstrated in silica, crystal and other glass hosts. These rare earth doped optical waveguide devices are based on inorganic materials. Many processing steps are required and can lead to long fabrication time and low yield.Polymer materials offer many distinct properties compared to inorganic materials, such as ease of fabrication, low production costs, simple processing steps, and compatibility with micro-fabrication technologies. ...展开更多
基金supported by the National Natural Science Foundation of China(Grant No.62005098)the Fundamental Research Funds for the Central University(Grant No.11623415)the Guangzhou Science and Technology Planning Project(Grant No.202201010320).
文摘In the field of short-range optical interconnects,the development of low-power-consumption,ultrawideband on-chip optical waveguide amplifiers is of critical importance.Central to this advancement is the creation of host materials that require low pump power and provide ultrabroadband emission capabilities.We introduce a tri-doped lanthanum aluminate glass(composition:5Er_(2)O_(3)-5Yb_(2)O_(3)-0.2Tm_(2)O_(3)-43.8La_(2)O_(3)-46Al_(2)O_(3)),which exhibits exceptional near-infrared(NIR)luminescence intensity,significantly outperforming other bands by 3 orders of magnitude.This glass can achieve an ultrawideband NIR gain spanning 478 nm,from 1510 to 1988 nm.Notably,the glass achieves positive optical gain with a low population inversion threshold(P>0.2),highlighting its efficiency and low-power consumption.The high glass transition temperature(Tg∼842°C)and large temperature difference(ΔT∼120°C)between Tg and the onset of crystallization(Tx)indicate excellent thermal stability,which is crucial for producing high-quality amorphous films for on-chip amplifiers.This research examines the unique energy levels and spectral properties of the Er^(3+)-Yb^(3+)-Tm^(3+) tri-doped glass,assessing its potential for use in ultrawideband on-chip optical waveguide amplifiers.This work lays the groundwork for low-power,ultrabroadband on-chip waveguide amplifiers,offering new avenues for short-range optical interconnect systems.
基金Natural Science Foundation of Shaanxi Province(2004CS110005) Research Foundation of NorthwesternPolytechnical University
文摘A spectral numerical analysis method to analyze the Er-doped waveguide amplifiers(EDWA) in wavelength division multiplexing is presented. This model is based on finite difference beam propagation method modified by Douglas scheme, which can efficiently reduce the truncation error and time consumption. By superposing the Lorentzian function for the experimental curves, the spectral properties of EDWA can be investigated. Results show that the pump efficiency of EDWA pumped at 980nm is higher than that at 1480nm. Meanwhile, by rationally increasing the pump length and the erbium concentration, larger signal gains can be acquired. Taking account of the up-conversion and cross-relaxation effects of cooperation, the spectrum analysis of highly doped EDWA is carried out over a wider frequency band.
基金National Key Research and Development Program of China(2023YFB2805100)Natural Science Foundation of Guangdong Province(2023A1515110068)National Natural Science Foundation of China(62475296).
文摘In this paper,an efficient Ge_(25)Sb_(10)S_(65)(GeSbS)-loaded erbium-doped lithium niobate waveguide amplifier is demonstrated.By dimensional optimization of the waveguide,an internal net gain of approximately 28 dB and a maximum on-chip output power of 8.2 dBm are demonstrated upon 1480 nm bidirectional pumping.Due to the improved optical mode field distribution within the active erbium-doped lithium niobate film and the mode overlap ratio between the pump and signal sources,a 15% high conversion efficiency can be achieved at a modest pump power of 45 mW.Furthermore,the noise figure of the amplifier can be maintained below 6 dB for low-input-signal power levels.Compared to state-of-the-art erbium-doped waveguide amplifiers(EDWAs),this heterogeneously integrated device shows superior gain performance at the desired optical C-band while avoiding the complex plasma etching process of lithium niobate,providing an inspirative solution for power compensation in the optical telecommunications.
基金supported by the National Key Research and Development Program of China(2021YFB2800502)the National Natural Science Foundation of China(U22A2085 and 12174150)。
文摘Optical waveguide amplifiers are essential devices in integrated optical systems,with their gain bandwidths directly influencing the operating wavelengths of optical circuits.Previous Er^(3+)-doped polymer optical waveguide amplifiers have been limited to amplifying signals within the C-band.To achieve broadband polymer optical waveguide amplification,we propose the use of nanocrystals with low crystal field symmetry to extend the working bandwidth.Our approach utilizes LiYF_(4):Yb,Er nanoparticles embedded in poly(methyl methacrylate)as the gain medium,enabling signal amplification from most of the S-band to the whole(C+L)band.The low crystal field symmetry of the LiYF_(4)host significantly splits the^(4)I_(13/2)and^(4)I_(15/2)levels of Er^(3+)ions owing to the crystal field effect,facilitating broadband down-conversion luminescence under 980-nm excitation.Furthermore,a fluorescence kinetic analysis confirms that the broadband luminescence of Er^(3+)arises from significant energy-level splitting caused by the crystal field effect.Under 980-nm excitation,the amplifiers exhibited relative gains of approximately 12.6 dB at 1535 nm,7.4 dB at 1480 nm,and 3.7 dB at 1610 nm.The Er^(3+)-doped broadband polymer optical waveguide amplifier was successfully prepared.
基金financial supports from National Key R&D Program of China(Grant No.2022YFA1205100,2022YFA1404600)National Natural Science Foundation of China(Grant Nos.12192251,12334014,12474325,12134001,12304418,12474378,12274133,12174107,12174113,12274130)+2 种基金the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0301403)Shanghai Municipal Science and Technology Major Project(Grant No.2019SHZDZX01)Fundamental Research Funds for the Central Universities,the Engineering Research Center for Nanophotonics&Advanced Instrument,Ministry of Education,East China Normal University(No.2023nmc005).
文摘Miniaturized erbium-doped waveguide amplifiers attracted great interests in recent decades due to their high gain-efficiency and function-scalability in the telecom C-band.In this work,an erbium-doped thin film lithium niobate waveguide amplifier achieving>10 dB off-chip(fiber-to-fiber)net gain and>20 mW fiber-output amplified power is demonstrated,thanks to the low-propagation-loss waveguides and robust waveguide edge-couplers prepared by the photolithography assisted chemomechanical etching technique.Systematic investigation on the fabricated waveguide amplifiers reveals remarkable optical gain around the peak wavelength of 1532 nm as well as the low fiber-coupling loss of-1.2 dB/facet.A fiber Bragg-grating based waveguide laser is further demonstrated using the fabricated waveguide amplifier as the external gain chip,which generates>2 mW off-chip power continuous-wave lasing around the gain peak at 1532 nm.The unambiguous demonstration of fiber-to-fiber net gain of the erbium-doped thinfilm lithium niobate(TFLN)waveguide amplifier as well as its external gain chip application will benefit diverse fields demanding scalable gain elements with highspeed tunability.
文摘Progress in rare earth doped planar glass waveguide devices has been significant over the past few years. The history and applications of these devices are reviewed.
基金supported by the National Natural Science Foundation of China (Nos. 51622304, 51603082)Open Research Fund of State Key Laboratory of Polymer Physics and Chemistry,Changchun Institute of Applied Chemistry,Chinese Academy of Sciences (No. 201631)
文摘A series of 2,5-diaminoterephthalates with a simple structure were synthesized through one-step reaction, and their bar-shaped single crystals with a large size and a smooth surface have been obtained via the solvent-evaporation method. These crystals exhibit bright emission with fluorescence quantum yields higher than 0.2. They display the waveguide property, and low optical loss coefficients for waveguide have been determined for the crystal of one compound. In addition, the crystal can cause linear polarization of the light emitted from it, with a high polarization contrast of 0.70. Most importantly, these crystals can realize amplified spontaneous emission （ASE）, including the red ASE, with appreciable energy thresholds of 72-198 kW/cm^2 and high gain coefficients, which suggests the potential of these crystals for the application in organic solid-state lasers.
基金Project supported by the National Natural Science Foundation of China （Grant No 50240420656）.
文摘Using transmission electron microscopy （TEM） and x-ray diffraction analysis, we have studied the structural and morphological evolution of highly Er/Yb co-doped A1203 films in the temperature range from 600℃-900℃. By comparison with TEM observation, the annealing behaviours of photoluminescence （PL） emission and optical loss were found to have relation to the structure and morphology. The increase of PL intensity and optical loss above 800℃ might result from the crystallization of amorphous Al2O3 films. Based on the study on the structure and morphology, a rate equation propagation model of a multilevel system was used to calculate the optical gains of Er-doped Al2O3 planar waveguide amplifiers involving the variation of PL efficiency and optical loss with annealing temperature. It was found that the amplifiers had an optimized optical gain at the temperature corresponding to the minimum of optical loss, rather than at the temperature corresponding to the maximum of PL efficiency, suggesting that the optical loss is a key factor for determining the optical gain of an Er-doped Al2O3 planar waveguide amplifier.
基金supported by the National Key R&D Program of China(No.2023YFB4604600)the National Natural Science Foundation of China(Nos.12274133,12204176,12192251,12334014,12134001,12474378,and 12474325)+2 种基金the Innovation Program for Quantum Science and Technology(No.2021ZD0301403)the Shanghai Municipal Science and Technology Major Project(No.2019SHZDZX01)the Fundamental Research Funds for the Central Universities,the Engineering Research Center for Nanophotonics&Advanced Instrument,Ministry of Education,East China Normal University(No.2023nmc005)。
文摘On-chip microlasers and waveguide amplifiers offer promising applications in optical communication,sensing,and photonic computing,presenting efficient,compact,and scalable light source solutions for integrated photonics systems.We demonstrated a low-threshold on-chip microdisk resonator laser and a high-gain optical waveguide amplifier on thin-film erbium-doped tantalum pentoxide(Er:Ta_(2)O_(5)).The fabricated Er:Ta_(2)O_(5) microdisk microlaser achieved a low threshold of 225μW,and the fabricated Er:Ta_(2)O_(5) waveguide amplifier achieved an on-chip gain of 8.8 dB/cm.These results demonstrate that active functional high-performance integrated photonic devices can be realized on the thin-film Ta_(2)O_(5) platform.
基金Project supported by the National Natural Science Foundation of China(Grant No10575087)the Natural Science Foundation of Zhejiang Province,China(Grant No Y605056)
文摘This paper analyses bright and dark spatial self-similar waves propagation and collision in graded-index nonlinear waveguide amplifiers with self-focusing and self-defocusing Kerr nonlinearities. It finds an appropriate transformation for the first time such that the nonlinear Schrodinger equation （NLSE） with varying coefficients transform into standard NLSE. It obtains one-solitonlike, two-solitonlike and multi-solitonlike self-similar wave solutions by using the transformation. Furthermore, it analyses the features of the self-similar waves and their collisions.
基金funded by the Key Program of the National Natural Science Foundation of China(Grant No.62035001)the International Partnership Program of Chinese Academy of Sciences(No.18123KYSB20210013)the Shanghai Science and Technology Innovation Action Plan(No.22dz208700).
文摘In current documented studies,it has been observed that wavelength converters utilizing AlGaAsOI waveguides exhibit suboptimal on-chip wavelength conversion efficiency from the C-band to the 2μm band,generally falling below−20.0 dB.To address this issue,we present a novel wavelength conversion device assisted by a waveguide amplifier,incorporating both AlGaAs wavelength converter and erbium-ytterbium co-doped waveguide amplifier,thereby achieving a notable conversion efficiency exceeding 0 dB.The noteworthy enhancement in efficiency can be attributed to the specific dispersion design of the AlGaAs wavelength converter,which enables an upsurge in conversion efficiency to−15.54 dB under 100 mW of pump power.Furthermore,the integration of an erbium-ytterbium co-doped waveguide amplifier facilitates a loss compensation of over 15 dB.Avoiding the use of external optical amplifiers,this device enables efficient and high-bandwidth wavelength conversion,showing promising applications in various fields,such as optical communication,sensing,imaging,and beyond.
文摘A new '(?)' type of wideband erbium-ytterbium co-doped phosphate glass waveguide amplifier integrated with medium thin film filter is proposed, Average gain about 15.5dB between 1530nm and 1570nm with gain difference of below 2 dB is obtained.
文摘1 Results Rare earth doped waveguide amplifiers and devices have been demonstrated in silica, crystal and other glass hosts. These rare earth doped optical waveguide devices are based on inorganic materials. Many processing steps are required and can lead to long fabrication time and low yield.Polymer materials offer many distinct properties compared to inorganic materials, such as ease of fabrication, low production costs, simple processing steps, and compatibility with micro-fabrication technologies. ...
