There is an urgent need for novel processes that can integrate different functional nanostructures onto specific substrates,so as to meet the fast-growing need for broad applications in nanoelectronics,nanophotonics,a...There is an urgent need for novel processes that can integrate different functional nanostructures onto specific substrates,so as to meet the fast-growing need for broad applications in nanoelectronics,nanophotonics,and fexible optoelectronics.Existing direct-lithography methods are difficult to use on fexible,nonplanar,and biocompatible surfaces.Therefore,this fabrication is usually accomplished by nanotransfer printing.However,large-scale integration of multiscale nanostructures with unconventional substrates remains challenging because fabrication yields and quality are often limited by the resolution,uniformity,adhesivity,and integrity of the nanostructures formed by direct transfer.Here,we proposed a resist-based transfer strategy enabled by near-zero adhesion,which was achieved by molecular modification to attain a critical surface energy interval.This approach enabled the intact transfer of wafer-scale,ultrathin-resist nanofilms onto arbitrary substrates with mitigated cracking and wrinkling,thereby facilitating the in situ fabrication of nanostructures for functional devices.Applying this approach,fabrication of three-dimensional-stacked multilayer structures with enhanced functionalities,nanoplasmonic structures with~10 nm resolution,and MoS2-based devices with excellent performance was demonstrated on specific substrates.These results collectively demonstrated the high stability,reliability,and throughput of our strategy for optical and electronic device applications.展开更多
As an outstanding representative of layered materials,molybdenum disulfide(MoS_(2))has excellent physical properties,such as high carrier mobility,stability,and abundance on earth.Moreover,its reasonable band gap and ...As an outstanding representative of layered materials,molybdenum disulfide(MoS_(2))has excellent physical properties,such as high carrier mobility,stability,and abundance on earth.Moreover,its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics,flexible electronics,and focal-plane photodetector.However,to realize the all-aspects application of MoS_(2),the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization.Although the MoS_(2)grain size has already improved from several micrometers to sub-millimeters,the high-quality growth of wafer-scale MoS_(2)is still of great challenge.Herein,this review mainly focuses on the evolution of MoS_(2)by including chemical vapor deposition,metal–organic chemical vapor deposition,physical vapor deposition,and thermal conversion technology methods.The state-of-the-art research on the growth and optimization mechanism,including nucleation,orientation,grain,and defect engineering,is systematically summarized.Then,this review summarizes the wafer-scale application of MoS_(2)in a transistor,inverter,electronics,and photodetectors.Finally,the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS_(2).展开更多
Large-scale growth and heterogeneous integration with existing semiconductors are the main obstacles to the application of metal halide perovskites in optoelectronics.Herein,a universal vacuum evaporation strategy is ...Large-scale growth and heterogeneous integration with existing semiconductors are the main obstacles to the application of metal halide perovskites in optoelectronics.Herein,a universal vacuum evaporation strategy is presented to prepare copper halide films with wafer-scale spatial homogeneity.Benefiting from the electric field manipulation method,the built-in electric fields are optimized and further boost the self-powered UV photodetecting performances of common wide-bandgap semiconductors by more than three orders of magnitude.Furthermore,with effective modulation of the interfacial charge dynamics,the as-fabricated GaN-substrate heterojunction photodetector demonstrates an ultrahigh on/off ratio exceeding 107,an impressive responsivity of up to 256 mA W^(-1),and a remarkable detectivity of 2.16×10^(13) Jones at 350 nm,0 V bias.Additionally,the device exhibits an ultrafast response speed(t r/t d=716 ns/1.30 ms),an ultra-narrow photoresponse spectrum with an FWHM of 18 nm and outstanding continuous operational stability as well as long-term stability.Subsequently,a 372-pixel light-powered imaging sensor array with the coefficient of variation of photocurrents reducing to 5.20%is constructed,which demonstrates exceptional electrical homogeneity,operational reliability,and UV imaging capability.This strategy provides an efficient way for large-scale integration of metal halide perovskites with commercial semiconductors for miniature optoelectronic devices.展开更多
In this paper, we describe a new silicon-die thermal monitoring approach using spatiotemporal signal processing technique for Wafer-Scale IC thermome- chanical stress monitoring. It is proposed in the context of a waf...In this paper, we describe a new silicon-die thermal monitoring approach using spatiotemporal signal processing technique for Wafer-Scale IC thermome- chanical stress monitoring. It is proposed in the context of a wafer-scale-based (WaferICTM) rapid prototyping platform for electronic systems. This technique will be embedded into the structure of the WaferIC, and will be used as a preventive measure to protect the wafer from possible damages that can be caused by excessive thermomechanical stress. The paper also presents spatial and spatiotemporal algorithms and the experimental results from an IR images collection campaign conducted using an IR camera.展开更多
Memristive crossbar arrays(MCAs)offer parallel data storage and processing for energy-efficient neuromorphic computing.However,most wafer-scale MCAs that are compatible with complementary metal-oxide-semiconductor(CMO...Memristive crossbar arrays(MCAs)offer parallel data storage and processing for energy-efficient neuromorphic computing.However,most wafer-scale MCAs that are compatible with complementary metal-oxide-semiconductor(CMOS)technology still suffer from substantially larger energy consumption than biological synapses,due to the slow kinetics of forming conductive paths inside the memristive units.Here we report wafer-scale Ag_(2)S-based MCAs realized using CMOS-compatible processes at temperatures below 160℃.Ag_(2)S electrolytes supply highly mobile Ag+ions,and provide the Ag/Ag_(2)S interface with low silver nucleation barrier to form silver filaments at low energy costs.By further enhancing Ag+migration in Ag_(2)S electrolytes via microstructure modulation,the integrated memristors exhibit a record low threshold of approximately−0.1 V,and demonstrate ultra-low switching-energies reaching femtojoule values as observed in biological synapses.The low-temperature process also enables MCA integration on polyimide substrates for applications in flexible electronics.Moreover,the intrinsic nonidealities of the memristive units for deep learning can be compensated by employing an advanced training algorithm.An impressive accuracy of 92.6%in image recognition simulations is demonstrated with the MCAs after the compensation.The demonstrated MCAs provide a promising device option for neuromorphic computing with ultra-high energy-efficiency.展开更多
Wide bandgap semiconductors are ideal materials for ultraviolet(UV)photodetectors due to their stable optoelectronic properties and high efficient UV light absorption.However,photodetectors based on pure wide bandgap ...Wide bandgap semiconductors are ideal materials for ultraviolet(UV)photodetectors due to their stable optoelectronic properties and high efficient UV light absorption.However,photodetectors based on pure wide bandgap semiconductors typically have large dark current that inhibit the devices from generating high UV photoresponse.Herein,a high-voltage-resistant wafer-scale 4H-SiC UV photodetector enabled by electric field distribution modulation is proposed.As the P+region introduced by the ion implantation process affects the electric field distribution and suppresses the Schottky barrier lowering effect,the dark current of the device reaches pA-level,and remains nA-level at a bias voltage of 1 kV.Meanwhile,the device exhibits superior photoresponse,including a prominent responsivity of 105.7 A/W,a remarkable detectivity of 1.01×10^(14) Jones,an outstanding photoconductive gain of 477,and a high light on/off ratio of 1.84×10^(5).This device provides a reliable solution for high-performance UV photodetectors that require high-voltage-resistant in special areas,and the wafer-scale fabrication process makes it feasible for practical applications.展开更多
Two-dimensional(2D)ferroelectrics with high Curie temperature(T_(c))exhibit stable ferroelectricity at the nanoscale and possess significant applications in the miniaturization of ferroelectric devices.However,control...Two-dimensional(2D)ferroelectrics with high Curie temperature(T_(c))exhibit stable ferroelectricity at the nanoscale and possess significant applications in the miniaturization of ferroelectric devices.However,controllable growth of wafer-scale 2D ferroelectric films with desired thickness is still rarely reported.In this study,we develop a two-step vapour deposition method to grow wafer-scale 2D CuCrS_(2)ferroelectric films with a uniform thickness from 2 to 10 nm.These films possess a non-centrosymmetric structure with a 3R stacking sequence,exhibit ferroelectric polarizations,and the Tc of CuCrS_(2)is higher than room temperature.The constructed electronic devices exhibit the characteristics of ferroelectric memristor,which opens up applications for ferroelectric functional devices.展开更多
Large-scale synthesis of high-quality two dimensional(2D)semiconductors,such as molybdenum disulfide(MoS_(2)),is a prerequisite for their lab-to-fab transition.It is crucial to systematically explore and understand th...Large-scale synthesis of high-quality two dimensional(2D)semiconductors,such as molybdenum disulfide(MoS_(2)),is a prerequisite for their lab-to-fab transition.It is crucial to systematically explore and understand the influence of key synthetic conditions on the nucleation,uniformity,and quality of MoS_(2) wafers.Here,we report the epitaxial growth of high-quality and uniform monolayer MoS_(2) films on 2-in c-plane sapphire by chemical vapor deposition(CVD)method under optimized growth conditions(0–1 mg NaCl,adequate S/Mo ratio,and the addition of 0–1 sccm O2).We systematically explore the influence of critical synthetic conditions on the nucleation,and stitching of MoS_(2) domains over the wafer scale,including the dosage of the alkali metal salt NaCl additive,the evaporation temperature of MoO_(3),the distance between MoO_(3) and the substrate,and the flow rate of O_(2).Among them,the dosage of NaCl and the S/Mo ratio have important influences on the quality and film coverage of MoS_(2),while the flow rate of O_(2) plays a key role in controlling the nucleation density and domain size.We further discovered that a-plane sapphire could easily guide the unidirectional growth of MoS_(2) without the need for other specific synthetic conditions compared with c-plane and m-plane sapphire.The field-effect transistors(FETs)fabricated from the full-coverage films show an average and the highest mobilities of 28.5 and around 45 cm^(2)·V−1·s^(-1),respectively.展开更多
Noble metal-based surface-enhanced Raman spectroscopy(SERS)has emerged as an ultrasensitive technique capable of detecting single molecules through their unique vibrational signatures.However,achieving robust SERS nan...Noble metal-based surface-enhanced Raman spectroscopy(SERS)has emerged as an ultrasensitive technique capable of detecting single molecules through their unique vibrational signatures.However,achieving robust SERS nano-materials that combine significant enhancement factors,scalable reproducibility,and superior chemical stability remains a significant challenge.We present an oxygen-free vapor deposition technique for wafer-scale fabrication of nanocrystalline NbSe_(2)(NC-NbSe_(2))films on SiO2/Si substrates,which is compatible with batch production.The NC-NbSe_(2)films exhibit remarkable chemical stability across both crystalline domains(average size~8.1 nm)and grain boundaries.This stability,combined with enhanced surface adsorption and a high density of states near the Fermi level,enables superior SERS performance.Rhodamine 6G detection demonstrates a sensitivity of 1×10^(-10)M,comparable to noble metal-based SERS substrates.Additionally,the NC-NbSe_(2)film maintains stable SERS signals under harsh thermal and chemical conditions.This scalable approach enables the creation of uniform,reproducible SERS atomic thin film,advancing applications in microelectronics and sensing technologies.展开更多
Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,enc...Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure platforms.In this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design flow.The proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 ns.Validation of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator circuits.Leveraging the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μm.This research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.展开更多
Two-dimensional(2D)van derWaals materials have attracted great interest and facilitated the development of post-Moore electronics owing to their novel physical properties and high compatibility with traditional microf...Two-dimensional(2D)van derWaals materials have attracted great interest and facilitated the development of post-Moore electronics owing to their novel physical properties and high compatibility with traditional microfabrication techniques.Their wafer-scale synthesis has become a critical challenge for large-scale integrated applications.Although the wafer-scale synthesis approaches for some 2D materials have been extensively explored,the preparation of high-quality thin films with well-controlled thickness remains a big challenge.This review focuses on the wafer-scale synthesis of 2D materials and their applications in integrated electronics.Firstly,several representative 2D layered materials including their crystal structures and unique electronic properties were introduced.Then,the current synthesis strategies of 2Dlayeredmaterials at thewafer scale,which are divided into“top-down”and“bottom-up”,were reviewed in depth.Afterwards,the applications of 2D materials wafer in integrated electrical and optoelectronic devices were discussed.Finally,the current challenges and future prospects for 2D integrated electronics were presented.It is hoped that this reviewwill provide comprehensive and insightful guidance for the development of wafer-scale 2D materials and their integrated applications.展开更多
Transformer-based large language models(LLMs)have made significant strides in the field of artificial intelligence(AI).However,training these LLMs imposes immense demands on computational power and bandwidth for hardw...Transformer-based large language models(LLMs)have made significant strides in the field of artificial intelligence(AI).However,training these LLMs imposes immense demands on computational power and bandwidth for hardware systems.Wafer-scale chips(WSCs)offer a promising solution,yet they struggle with limited on-chip memory and complex tensor partitioning.To fully harness the high-bandwidth,low-latency on-chip interconnect benefits of WSCs and to alleviate the on-chip memory limitations,a specialized mapping and architecture co-exploration method is essential.Despite existing efforts in memory optimization and mapping,current approaches fall short for WSC scenarios.To bridge this gap,we introduce TMAC,an architecture-mapping co-exploration framework that integrates recomputation into the design space,fully exploiting optimization opportunities overlooked by existing works.Further,TMAC takes advantage of the superior on-chip interconnect performance of WSCs by incorporating a more flexible tensor partition scheme.TMAC then introduces a novel operator-centric encoding scheme(OCES)designed to comprehensively describe the mapping space for training LLMs.Unlike previous studies that focus solely on communication volume analysis based on mapping,TMAC explores the design space by evaluating the combined impact of mapping and architecture on training performance.However,fully accounting for these untapped optimization opportunities increases the complexity of the design space.To address this,we streamline the simulation process,reducing the time needed for exploration.Compared to AccPar,Deepspeed and Megatron,TMAC delivers a 3.1×,2.9×,1.6×performance gain.In terms of memory usage,TMAC requires 3.6×,3.1×less memory than AccPar and Deepspeed,respectively and is comparable to Megatron’s full recomputation method.展开更多
Two-dimensional （2D） nanomaterials have recently attracted considerable attention due to their promising applications in next-generation electronics and optoelectronics. In particular, the large-scale synthesis of h...Two-dimensional （2D） nanomaterials have recently attracted considerable attention due to their promising applications in next-generation electronics and optoelectronics. In particular, the large-scale synthesis of high-quality 2D materials is an essential requirement for their practical applications. Herein, we demonstrate the wafer-scale synthesis of highly crystalline and homogeneous monolayer WS2 by an enhanced chemical vapor deposition （CVD） approach, in which precise control of the precursor vapor pressure can be effectively achieved in a multi-temperature zone horizontal furnace. In contrast to conventional synthesis methods, the obtained monolayer WS2 has excellent uniformity both in terms of crystallinity and morphology across the entire substrate wafer grown （e.g., 2 inches in diameter）, as corroborated by the detailed characterization. When incorporated in typical rigid photodetectors, the monolayer WS2 leads to a respectable photodetection performance, with a responsivity of 0.52 mA/W, a detectivity of 4.9 × 10^9 Jones, and a fast response speed （〈 560μs）. Moreover, once fabricated as flexible photodetectors on polyimide, the monolayer WS2 leads to a responsivity of up to 5 mA/W. Importantly, the photocurrent maintains 89% of its initial value even after 3,000 bending cycles. These results highlight the versatility of the present technique, which allows its applications in larger substrates, as well as the excellent mechanical flexibility and robustness of the CVD-grown, homogenous WS2 monolayers, which can promote the development of advanced flexible optoelectronic devices.展开更多
High-quality and large-scale growth of monolayer molybdenum disulfide(MoS2)has caught intensive attention because of its potential in many applications due to unique electronic properties.Here,we report the wafer-scal...High-quality and large-scale growth of monolayer molybdenum disulfide(MoS2)has caught intensive attention because of its potential in many applications due to unique electronic properties.Here,we report the wafer-scale growth of high-quality mono layer MoS2 on singlecrystalline sapphire and also on SiO2 substrates by a facile metal-organic chemical vapor deposit!on(MOCVD)method.Prior to growth,an aqueous solution of sodium molybdate(Na2MoO4)is spun onto the substrates as the molybdenum precursor and diethyl sulfide((C2H5)2S)is used as the sulfur precursor duri ng the growth.The grown MoS2 films exhibit crystal I i nity,good electrical performa nee(electro n mobility of 22 cm2·V^-1·s^-1)and structural continuity maintained over the entire wafer.The sapphire substrates are reusable for subsequent growth.The same method is applied for the synthesis of tungsten disulfide(WS2).Our work provides a facile,reproducible and cost-efficient method for the scalable fabricati on of high-quality mono layer MoS2 for versatile applicati ons,such as electro nic and optoelectr onic devices as well as the membranes for desalination and power generation.展开更多
Wafer-scale van der Waals heterostructures(vdWHs),benefitting from the rich diversity in materials available and stacking geometry,precise controllability in devices structure and performance,and unprecedented potenti...Wafer-scale van der Waals heterostructures(vdWHs),benefitting from the rich diversity in materials available and stacking geometry,precise controllability in devices structure and performance,and unprecedented potential in practical application,have attracted considerable attention in the field of twodimensional(2D)materials.This article reviews the state-of-the-art research activities that focus on wafer-scale vdWHs and their(opto)electronic applications.We begin with the preparation strategies of vdWHs with wafer size and illustrate them from four key aspects,that is,mechanical-assembly stack,successive deposition,synchronous evolution,and seeded growth.We discuss the fundamental principle,underlying mechanism,advantages,and disadvantages for each strategy.We will then review the applications of large-area vdWHs based devices in electronic,optoelectronic and flexible devices field,unveiling their promising potential for practical application.Ultimately,we will demonstrate the challenges they face and provide some viable solutions on waferscale heterostructure synthesis and device fabrication.展开更多
As the lastly unexplored electromagnetic wave,terahertz(THz)radiation has been exploited in a plenty of contexts such as fundamental research,military and civil fields.Most recently,representative two-dimensional(2D)t...As the lastly unexplored electromagnetic wave,terahertz(THz)radiation has been exploited in a plenty of contexts such as fundamental research,military and civil fields.Most recently,representative two-dimensional(2D)topological semimetal,platinum ditelluride(PtTe_(2))has attracted considerable research interest in THz detection due to its unique physical properties.However,to achieve practical applications,the low-cost,large-scale,controllable synthesis and efficient patterning of 2D materials are key requirements,which remain a challenge for PtTe_(2)and its photodetectors(PDs).Herein,a facile approach is developed to obtain waferscale(2-inches)patterned PtTe_(2)arrays using one-step tellurium-vapor transformation method and micro-Nano technology.PtTe_(2)PD arrays are fabricated with the as-grown PtTe_(2)arrays evenly distributed on a 2-inch wafer,exhibiting high conductivity(~2.7×105 S m^(-1))and good electrical consistency.Driven by the Dirac fermions,PtTe_(2)PDs achieve a broadband(0.02-0.3 THz)response with a fast response speed(~4.7μs),a high sensitivity(~47 pW Hz^(-1/2))and high-resolution transmission THz-imaging capability,which displays the potential of large-area THz array imaging.These results are one step towards the practical applications of integrated PD arrays based on 2D materials.展开更多
Scalable synthesis of transfer-free graphene over insulators offers exciting opportunity for next-generation electronics and optoelectronics.However,rational design of synthetic protocols to harvest wafer-scale produc...Scalable synthesis of transfer-free graphene over insulators offers exciting opportunity for next-generation electronics and optoelectronics.However,rational design of synthetic protocols to harvest wafer-scale production of directly grown graphene still remains a daunting challenge.Herein we explore a batch synthesis of large-area graphene with wafer-scale uniformity by virtue of direct chemical vapor deposition(CVD)on quartz.Such a controllable CVD approach allows to synthesize 30 pieces of 4-inch graphene wafers in one batch,affording a low fluctuation of optical and electrical properties.Computational fluid dynamics simulations reveal the mechanism of uniform growth,indicating thermal field and confined flow field play leading roles in attaining the batch uniformity.The resulting wafer-scale graphene enables the direct utilization as key components in optical elements.Our method is applicable to other types of insulating substrates(e.g.,sapphire,SiO2/Si,Si3N4),which may open a new avenue for direct manufacture of graphene wafers in an economic fashion.展开更多
Substitutional atomic doping of transition metal dichalcogenides(TMDs)in the chemical vapor deposition(CVD)process is a promising and effective strategy for modifying their physicochemical properties.However,the conve...Substitutional atomic doping of transition metal dichalcogenides(TMDs)in the chemical vapor deposition(CVD)process is a promising and effective strategy for modifying their physicochemical properties.However,the conventional CVD method only allows narrow-range modulation of the dopant concentration owing to the low reactivity of the precursors.Moreover,the growth of wafer-scale monolayer TMD films with high dopant concentrations is much more challenging.Herein,we report a facile doping approach based on liquid precursor-mediated CVD process for achieving high vanadium(V)doping in the MoS_(2)lattice with excellent doping uniformity and stability.The lateral growth of the host MoS_(2)lattice and the reactivity of the V precursor were simultaneously improved by introducing an alkali metal halide as a reaction promoter.The metal halide promoter enabled the wafer-scale synthesis of V-incorporated MoS_(2)monolayer film with excessively high doping concentrations.The excellent wafer-scale uniformity of the highly V-doped MoS_(2)film was confirmed through a series of microscopic,spectroscopic,and electrical analyses.展开更多
We have developed a self-contained,liquid tunable microlens based on polyacrylate membranes integrated with compact on-chip thermo-pneumatic actuation fabricated using full-wafer processing.Silicone oil is used as the...We have developed a self-contained,liquid tunable microlens based on polyacrylate membranes integrated with compact on-chip thermo-pneumatic actuation fabricated using full-wafer processing.Silicone oil is used as the optical liquid,which is pushed or pulled into the lens cavity via an extended microfluidic channel structure without any pumps,valves or other mechanical means.The heat load generated by the thermal actuator is physically isolated from the lens chamber.The back focal length may be tuned from infinity to 4 mm with a maximum power consumption of 300 mW.The principal application is fine tuning of the back focal length,for which tuning time constants as small as 100 ms are suitable.展开更多
Moore’s Law has been the driving force behind the semiconductor in-dustry for several decades,but as silicon-based transistors approach their physical limits,researchers are searching for new materials to sustain thi...Moore’s Law has been the driving force behind the semiconductor in-dustry for several decades,but as silicon-based transistors approach their physical limits,researchers are searching for new materials to sustain this exponential growth.Two-dimensional transition metal dichalcogenides(TMDs),with their atomically thin structure and en-ticing physical properties,have emerged as the most promising can-didates for downsizing and improving device integration.Embold-ened by the direction of achieving large-area and high-quality TMDs growth,wafer-scale TMDs growth strategies have been continuously developed,suggesting that TMDs are poised to become a new plat-form for next-generation electronic devices.In this review,advanced synthesis routes and inherent properties of wafer-scale TMDs were critically assessed.In addition,the performance in electronic devices was also discussed,providing an outlook on the opportunities and challenges that lie ahead in their development.展开更多
基金supported by the National Key Research and Development Program of China(No.2022YFB4602600)the National Natural Science Foundation of China(No.52221001)Hunan Provincial Innovation Foundation for Postgraduate(No.CX20220406)。
文摘There is an urgent need for novel processes that can integrate different functional nanostructures onto specific substrates,so as to meet the fast-growing need for broad applications in nanoelectronics,nanophotonics,and fexible optoelectronics.Existing direct-lithography methods are difficult to use on fexible,nonplanar,and biocompatible surfaces.Therefore,this fabrication is usually accomplished by nanotransfer printing.However,large-scale integration of multiscale nanostructures with unconventional substrates remains challenging because fabrication yields and quality are often limited by the resolution,uniformity,adhesivity,and integrity of the nanostructures formed by direct transfer.Here,we proposed a resist-based transfer strategy enabled by near-zero adhesion,which was achieved by molecular modification to attain a critical surface energy interval.This approach enabled the intact transfer of wafer-scale,ultrathin-resist nanofilms onto arbitrary substrates with mitigated cracking and wrinkling,thereby facilitating the in situ fabrication of nanostructures for functional devices.Applying this approach,fabrication of three-dimensional-stacked multilayer structures with enhanced functionalities,nanoplasmonic structures with~10 nm resolution,and MoS2-based devices with excellent performance was demonstrated on specific substrates.These results collectively demonstrated the high stability,reliability,and throughput of our strategy for optical and electronic device applications.
基金financially the National Natural Science Foundation of China(52002254,52272160)Sichuan Science and Technology Foundation(2020YJ0262,2021YFH0127,2022YFSY0045,2022YFH0083 and 23SYSX0060)+3 种基金the Chunhui plan of Ministry of Education,Fundamental Research Funds for the Central Universities,China(YJ201893)the Open-Foundation of Key Laboratory of Laser Device Technology,China North Industries Group Corporation Limited(Grant No.KLLDT202104)the foundation of the State Key Laboratory of Solidification Processing in NWPU(No.SKLSP202210)the 2035-Plan of Sichuan University。
文摘As an outstanding representative of layered materials,molybdenum disulfide(MoS_(2))has excellent physical properties,such as high carrier mobility,stability,and abundance on earth.Moreover,its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics,flexible electronics,and focal-plane photodetector.However,to realize the all-aspects application of MoS_(2),the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization.Although the MoS_(2)grain size has already improved from several micrometers to sub-millimeters,the high-quality growth of wafer-scale MoS_(2)is still of great challenge.Herein,this review mainly focuses on the evolution of MoS_(2)by including chemical vapor deposition,metal–organic chemical vapor deposition,physical vapor deposition,and thermal conversion technology methods.The state-of-the-art research on the growth and optimization mechanism,including nucleation,orientation,grain,and defect engineering,is systematically summarized.Then,this review summarizes the wafer-scale application of MoS_(2)in a transistor,inverter,electronics,and photodetectors.Finally,the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS_(2).
基金financially supported by the National Natural Science Foundation of China(Nos.92263106,62204047,and 12061131009)Science and Technology Commission of Shanghai Municipality(Nos.21520712600 and 19520744300).
文摘Large-scale growth and heterogeneous integration with existing semiconductors are the main obstacles to the application of metal halide perovskites in optoelectronics.Herein,a universal vacuum evaporation strategy is presented to prepare copper halide films with wafer-scale spatial homogeneity.Benefiting from the electric field manipulation method,the built-in electric fields are optimized and further boost the self-powered UV photodetecting performances of common wide-bandgap semiconductors by more than three orders of magnitude.Furthermore,with effective modulation of the interfacial charge dynamics,the as-fabricated GaN-substrate heterojunction photodetector demonstrates an ultrahigh on/off ratio exceeding 107,an impressive responsivity of up to 256 mA W^(-1),and a remarkable detectivity of 2.16×10^(13) Jones at 350 nm,0 V bias.Additionally,the device exhibits an ultrafast response speed(t r/t d=716 ns/1.30 ms),an ultra-narrow photoresponse spectrum with an FWHM of 18 nm and outstanding continuous operational stability as well as long-term stability.Subsequently,a 372-pixel light-powered imaging sensor array with the coefficient of variation of photocurrents reducing to 5.20%is constructed,which demonstrates exceptional electrical homogeneity,operational reliability,and UV imaging capability.This strategy provides an efficient way for large-scale integration of metal halide perovskites with commercial semiconductors for miniature optoelectronic devices.
文摘In this paper, we describe a new silicon-die thermal monitoring approach using spatiotemporal signal processing technique for Wafer-Scale IC thermome- chanical stress monitoring. It is proposed in the context of a wafer-scale-based (WaferICTM) rapid prototyping platform for electronic systems. This technique will be embedded into the structure of the WaferIC, and will be used as a preventive measure to protect the wafer from possible damages that can be caused by excessive thermomechanical stress. The paper also presents spatial and spatiotemporal algorithms and the experimental results from an IR images collection campaign conducted using an IR camera.
基金supported by the Swedish Strategic Research Foundation(SSF FFL15-0174 to Zhen Zhang)the Swedish Research Council(VR 2018-06030 and 2019-04690 to Zhen Zhang)+1 种基金the Wallenberg Academy Fellow Extension Program(KAW 2020-0190 to Zhen Zhang)the Olle Engkvist Foundation(Postdoc grant 214-0322 to Zhen Zhang).
文摘Memristive crossbar arrays(MCAs)offer parallel data storage and processing for energy-efficient neuromorphic computing.However,most wafer-scale MCAs that are compatible with complementary metal-oxide-semiconductor(CMOS)technology still suffer from substantially larger energy consumption than biological synapses,due to the slow kinetics of forming conductive paths inside the memristive units.Here we report wafer-scale Ag_(2)S-based MCAs realized using CMOS-compatible processes at temperatures below 160℃.Ag_(2)S electrolytes supply highly mobile Ag+ions,and provide the Ag/Ag_(2)S interface with low silver nucleation barrier to form silver filaments at low energy costs.By further enhancing Ag+migration in Ag_(2)S electrolytes via microstructure modulation,the integrated memristors exhibit a record low threshold of approximately−0.1 V,and demonstrate ultra-low switching-energies reaching femtojoule values as observed in biological synapses.The low-temperature process also enables MCA integration on polyimide substrates for applications in flexible electronics.Moreover,the intrinsic nonidealities of the memristive units for deep learning can be compensated by employing an advanced training algorithm.An impressive accuracy of 92.6%in image recognition simulations is demonstrated with the MCAs after the compensation.The demonstrated MCAs provide a promising device option for neuromorphic computing with ultra-high energy-efficiency.
基金financially supported by the National Natural Science Foundation of China(Nos.12174451,12474080,and 12274467)the Science and Technology Innovation Program of Hunan Province(No.2022RC1199)the High Performance Computing Center of Central South University,Central South University Graduate Student Independent Exploration and Innovation Project(Nos.2024ZZTS0454 and 2024ZZTS0778).
文摘Wide bandgap semiconductors are ideal materials for ultraviolet(UV)photodetectors due to their stable optoelectronic properties and high efficient UV light absorption.However,photodetectors based on pure wide bandgap semiconductors typically have large dark current that inhibit the devices from generating high UV photoresponse.Herein,a high-voltage-resistant wafer-scale 4H-SiC UV photodetector enabled by electric field distribution modulation is proposed.As the P+region introduced by the ion implantation process affects the electric field distribution and suppresses the Schottky barrier lowering effect,the dark current of the device reaches pA-level,and remains nA-level at a bias voltage of 1 kV.Meanwhile,the device exhibits superior photoresponse,including a prominent responsivity of 105.7 A/W,a remarkable detectivity of 1.01×10^(14) Jones,an outstanding photoconductive gain of 477,and a high light on/off ratio of 1.84×10^(5).This device provides a reliable solution for high-performance UV photodetectors that require high-voltage-resistant in special areas,and the wafer-scale fabrication process makes it feasible for practical applications.
基金the National Natural Science Foundation of China(52425203,52221001,62090035,12404216)the Natural Science Foundation of Jiangsu Province(BK20240008,BK20241252,BK20233001)+3 种基金the National Key R&D Program of China(2022YFA1204300)the Key Research and Development Plan of Hunan Province(2023GK2012)the Postdoctoral Fellowship Program of China Postdoctoral Science Foundation(GZC20231093)the Jiangsu Funding Program for Excellent Postdoctoral Talent(2023ZB553)。
文摘Two-dimensional(2D)ferroelectrics with high Curie temperature(T_(c))exhibit stable ferroelectricity at the nanoscale and possess significant applications in the miniaturization of ferroelectric devices.However,controllable growth of wafer-scale 2D ferroelectric films with desired thickness is still rarely reported.In this study,we develop a two-step vapour deposition method to grow wafer-scale 2D CuCrS_(2)ferroelectric films with a uniform thickness from 2 to 10 nm.These films possess a non-centrosymmetric structure with a 3R stacking sequence,exhibit ferroelectric polarizations,and the Tc of CuCrS_(2)is higher than room temperature.The constructed electronic devices exhibit the characteristics of ferroelectric memristor,which opens up applications for ferroelectric functional devices.
基金This work was granted by the National Key Research and Development Program of the of China(No.2022YFA1203801)the National Natural Science Foundation of China(Nos.51991340,51991343,52221001,52102168,and 52372145)+4 种基金Hunan Key Research and Development Program Project(No.2022GK2005)the Natural Science Foundation of Hunan Province(No.2023JJ20009)the Hunan Province“Huxiang Talents”Project(No.2023RC3092)the Natural Science Foundation of Chongqing,China(No.cstc2021jcyj-msxmX0321)the Doctoral Scientific Research Foundation of Hubei University of Automotive Technology(No.BK202486).
文摘Large-scale synthesis of high-quality two dimensional(2D)semiconductors,such as molybdenum disulfide(MoS_(2)),is a prerequisite for their lab-to-fab transition.It is crucial to systematically explore and understand the influence of key synthetic conditions on the nucleation,uniformity,and quality of MoS_(2) wafers.Here,we report the epitaxial growth of high-quality and uniform monolayer MoS_(2) films on 2-in c-plane sapphire by chemical vapor deposition(CVD)method under optimized growth conditions(0–1 mg NaCl,adequate S/Mo ratio,and the addition of 0–1 sccm O2).We systematically explore the influence of critical synthetic conditions on the nucleation,and stitching of MoS_(2) domains over the wafer scale,including the dosage of the alkali metal salt NaCl additive,the evaporation temperature of MoO_(3),the distance between MoO_(3) and the substrate,and the flow rate of O_(2).Among them,the dosage of NaCl and the S/Mo ratio have important influences on the quality and film coverage of MoS_(2),while the flow rate of O_(2) plays a key role in controlling the nucleation density and domain size.We further discovered that a-plane sapphire could easily guide the unidirectional growth of MoS_(2) without the need for other specific synthetic conditions compared with c-plane and m-plane sapphire.The field-effect transistors(FETs)fabricated from the full-coverage films show an average and the highest mobilities of 28.5 and around 45 cm^(2)·V−1·s^(-1),respectively.
基金supported by the National Natural Science Foundation of China(52402044,22304087,22272004)the Major Research Project of the Natural Science Foundation of the Jiangsu Higher Education Institutions(23KJA150006)+4 种基金the Natural Science Foundation of Jiangsu Province(BK20230349)the High-Level Talent Introduction Project of Nanjing University of Posts and Telecommunications(NY222110)the Fundamental Research Funds for the Central Universities(YWF-22-L-1256)the Shenzhen Science and Technology Program(KQTD20221101115627004,JCYJ20240813160206009)the Guangdong Provincial Key Laboratory of Nano-Micro Materials Research.
文摘Noble metal-based surface-enhanced Raman spectroscopy(SERS)has emerged as an ultrasensitive technique capable of detecting single molecules through their unique vibrational signatures.However,achieving robust SERS nano-materials that combine significant enhancement factors,scalable reproducibility,and superior chemical stability remains a significant challenge.We present an oxygen-free vapor deposition technique for wafer-scale fabrication of nanocrystalline NbSe_(2)(NC-NbSe_(2))films on SiO2/Si substrates,which is compatible with batch production.The NC-NbSe_(2)films exhibit remarkable chemical stability across both crystalline domains(average size~8.1 nm)and grain boundaries.This stability,combined with enhanced surface adsorption and a high density of states near the Fermi level,enables superior SERS performance.Rhodamine 6G detection demonstrates a sensitivity of 1×10^(-10)M,comparable to noble metal-based SERS substrates.Additionally,the NC-NbSe_(2)film maintains stable SERS signals under harsh thermal and chemical conditions.This scalable approach enables the creation of uniform,reproducible SERS atomic thin film,advancing applications in microelectronics and sensing technologies.
基金The authors gratefully acknowledge fundings from the Strategic Priority Research Program of Chinese Academy of Sciences(CAS)(No.XDA0330401)CAS Youth Interdisciplinary Team(No.JCTD-2022-07).
文摘Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure platforms.In this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design flow.The proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 ns.Validation of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator circuits.Leveraging the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μm.This research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements.
基金supported by National Natural Science Foundation of China(Nos.91964203,62274121,and 62104171)Wuhan Science and Technology Major Program(No.2022013702025186)R.C.also acknowledges support from the Young Elite Scientists Sponsorship Program by CAST(No.2022QNRC001).
文摘Two-dimensional(2D)van derWaals materials have attracted great interest and facilitated the development of post-Moore electronics owing to their novel physical properties and high compatibility with traditional microfabrication techniques.Their wafer-scale synthesis has become a critical challenge for large-scale integrated applications.Although the wafer-scale synthesis approaches for some 2D materials have been extensively explored,the preparation of high-quality thin films with well-controlled thickness remains a big challenge.This review focuses on the wafer-scale synthesis of 2D materials and their applications in integrated electronics.Firstly,several representative 2D layered materials including their crystal structures and unique electronic properties were introduced.Then,the current synthesis strategies of 2Dlayeredmaterials at thewafer scale,which are divided into“top-down”and“bottom-up”,were reviewed in depth.Afterwards,the applications of 2D materials wafer in integrated electrical and optoelectronic devices were discussed.Finally,the current challenges and future prospects for 2D integrated electronics were presented.It is hoped that this reviewwill provide comprehensive and insightful guidance for the development of wafer-scale 2D materials and their integrated applications.
基金This work was supported in part by the National Science and Technology Major Project under Grant 2022ZD0115200in part by Frontier Technique Collaboration Project under Grant QYJS-2023-2801-B+3 种基金in part by NSFC under Grant 62125403 and Grant 92164301in part by the Beijing S&T Project under Grant Z221100007722023in part by the Shanghai Municipal Science and Technology Major Project,in part by the 2022 Special Project on Industrial Foundation Reconstruction and High Quality Development of Manufacturing Industry under Grant CEIEC-2022-ZM02-0245in part by the Beijing National Research Center for Information Science and Technology,and in part by the Beijing Advanced Innovation Center for Integrated Circuits.
文摘Transformer-based large language models(LLMs)have made significant strides in the field of artificial intelligence(AI).However,training these LLMs imposes immense demands on computational power and bandwidth for hardware systems.Wafer-scale chips(WSCs)offer a promising solution,yet they struggle with limited on-chip memory and complex tensor partitioning.To fully harness the high-bandwidth,low-latency on-chip interconnect benefits of WSCs and to alleviate the on-chip memory limitations,a specialized mapping and architecture co-exploration method is essential.Despite existing efforts in memory optimization and mapping,current approaches fall short for WSC scenarios.To bridge this gap,we introduce TMAC,an architecture-mapping co-exploration framework that integrates recomputation into the design space,fully exploiting optimization opportunities overlooked by existing works.Further,TMAC takes advantage of the superior on-chip interconnect performance of WSCs by incorporating a more flexible tensor partition scheme.TMAC then introduces a novel operator-centric encoding scheme(OCES)designed to comprehensively describe the mapping space for training LLMs.Unlike previous studies that focus solely on communication volume analysis based on mapping,TMAC explores the design space by evaluating the combined impact of mapping and architecture on training performance.However,fully accounting for these untapped optimization opportunities increases the complexity of the design space.To address this,we streamline the simulation process,reducing the time needed for exploration.Compared to AccPar,Deepspeed and Megatron,TMAC delivers a 3.1×,2.9×,1.6×performance gain.In terms of memory usage,TMAC requires 3.6×,3.1×less memory than AccPar and Deepspeed,respectively and is comparable to Megatron’s full recomputation method.
文摘Two-dimensional （2D） nanomaterials have recently attracted considerable attention due to their promising applications in next-generation electronics and optoelectronics. In particular, the large-scale synthesis of high-quality 2D materials is an essential requirement for their practical applications. Herein, we demonstrate the wafer-scale synthesis of highly crystalline and homogeneous monolayer WS2 by an enhanced chemical vapor deposition （CVD） approach, in which precise control of the precursor vapor pressure can be effectively achieved in a multi-temperature zone horizontal furnace. In contrast to conventional synthesis methods, the obtained monolayer WS2 has excellent uniformity both in terms of crystallinity and morphology across the entire substrate wafer grown （e.g., 2 inches in diameter）, as corroborated by the detailed characterization. When incorporated in typical rigid photodetectors, the monolayer WS2 leads to a respectable photodetection performance, with a responsivity of 0.52 mA/W, a detectivity of 4.9 × 10^9 Jones, and a fast response speed （〈 560μs）. Moreover, once fabricated as flexible photodetectors on polyimide, the monolayer WS2 leads to a responsivity of up to 5 mA/W. Importantly, the photocurrent maintains 89% of its initial value even after 3,000 bending cycles. These results highlight the versatility of the present technique, which allows its applications in larger substrates, as well as the excellent mechanical flexibility and robustness of the CVD-grown, homogenous WS2 monolayers, which can promote the development of advanced flexible optoelectronic devices.
文摘High-quality and large-scale growth of monolayer molybdenum disulfide(MoS2)has caught intensive attention because of its potential in many applications due to unique electronic properties.Here,we report the wafer-scale growth of high-quality mono layer MoS2 on singlecrystalline sapphire and also on SiO2 substrates by a facile metal-organic chemical vapor deposit!on(MOCVD)method.Prior to growth,an aqueous solution of sodium molybdate(Na2MoO4)is spun onto the substrates as the molybdenum precursor and diethyl sulfide((C2H5)2S)is used as the sulfur precursor duri ng the growth.The grown MoS2 films exhibit crystal I i nity,good electrical performa nee(electro n mobility of 22 cm2·V^-1·s^-1)and structural continuity maintained over the entire wafer.The sapphire substrates are reusable for subsequent growth.The same method is applied for the synthesis of tungsten disulfide(WS2).Our work provides a facile,reproducible and cost-efficient method for the scalable fabricati on of high-quality mono layer MoS2 for versatile applicati ons,such as electro nic and optoelectr onic devices as well as the membranes for desalination and power generation.
基金National Nature Science Foundation of China,Grant/Award Number:21825103Natural Science Foundation of Hubei Province of China,Grant/Award Number:2019CFA002Fundamental Research Funds for the Central University,Grant/Award Number:2019kfyXMBZ018。
文摘Wafer-scale van der Waals heterostructures(vdWHs),benefitting from the rich diversity in materials available and stacking geometry,precise controllability in devices structure and performance,and unprecedented potential in practical application,have attracted considerable attention in the field of twodimensional(2D)materials.This article reviews the state-of-the-art research activities that focus on wafer-scale vdWHs and their(opto)electronic applications.We begin with the preparation strategies of vdWHs with wafer size and illustrate them from four key aspects,that is,mechanical-assembly stack,successive deposition,synchronous evolution,and seeded growth.We discuss the fundamental principle,underlying mechanism,advantages,and disadvantages for each strategy.We will then review the applications of large-area vdWHs based devices in electronic,optoelectronic and flexible devices field,unveiling their promising potential for practical application.Ultimately,we will demonstrate the challenges they face and provide some viable solutions on waferscale heterostructure synthesis and device fabrication.
基金National Natural Science Foundation of China,Grant/Award Numbers:61875223,61922082,61927813National Key R&D Program of China,Grant/Award Number:2021YFB2800702+3 种基金Jiangsu Province Key R&D Program,Grant/Award Numbers:BE2021007-3,BE2021007-2Shanghai Municipal Science and Technology Major Project,Grant/Award Number:2019SHZDZX01Science and Technology Commission of Shanghai Municipality,Grant/Award Number:21ZR1473800Vacuum Interconnected Nanotech Workstation(Nano-X)of Suzhou Institute of Nano-tech and Nano-bionics(SINANO),Chinese Academy of Sciences。
文摘As the lastly unexplored electromagnetic wave,terahertz(THz)radiation has been exploited in a plenty of contexts such as fundamental research,military and civil fields.Most recently,representative two-dimensional(2D)topological semimetal,platinum ditelluride(PtTe_(2))has attracted considerable research interest in THz detection due to its unique physical properties.However,to achieve practical applications,the low-cost,large-scale,controllable synthesis and efficient patterning of 2D materials are key requirements,which remain a challenge for PtTe_(2)and its photodetectors(PDs).Herein,a facile approach is developed to obtain waferscale(2-inches)patterned PtTe_(2)arrays using one-step tellurium-vapor transformation method and micro-Nano technology.PtTe_(2)PD arrays are fabricated with the as-grown PtTe_(2)arrays evenly distributed on a 2-inch wafer,exhibiting high conductivity(~2.7×105 S m^(-1))and good electrical consistency.Driven by the Dirac fermions,PtTe_(2)PDs achieve a broadband(0.02-0.3 THz)response with a fast response speed(~4.7μs),a high sensitivity(~47 pW Hz^(-1/2))and high-resolution transmission THz-imaging capability,which displays the potential of large-area THz array imaging.These results are one step towards the practical applications of integrated PD arrays based on 2D materials.
基金This work was financially supported by the National Basic Research Program of China(No.2016YFA0200103)the National Natural Science Foundation of China(Nos.61527814,51702225,51432002,61474109,51290272,51502007,11474274,and 51672007)+2 种基金the National Equipment Program of China(No.ZDYZ2015-1)Beijing Municipal Science and Technology Planning Project(Nos.Z181100004818002 and Z191100000819004)Beijing Natural Science Foundation(No.4182063).
文摘Scalable synthesis of transfer-free graphene over insulators offers exciting opportunity for next-generation electronics and optoelectronics.However,rational design of synthetic protocols to harvest wafer-scale production of directly grown graphene still remains a daunting challenge.Herein we explore a batch synthesis of large-area graphene with wafer-scale uniformity by virtue of direct chemical vapor deposition(CVD)on quartz.Such a controllable CVD approach allows to synthesize 30 pieces of 4-inch graphene wafers in one batch,affording a low fluctuation of optical and electrical properties.Computational fluid dynamics simulations reveal the mechanism of uniform growth,indicating thermal field and confined flow field play leading roles in attaining the batch uniformity.The resulting wafer-scale graphene enables the direct utilization as key components in optical elements.Our method is applicable to other types of insulating substrates(e.g.,sapphire,SiO2/Si,Si3N4),which may open a new avenue for direct manufacture of graphene wafers in an economic fashion.
基金supported by Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Korea government(MSIT)(Nos.2019R1A2C1009025 and 2022R1A4A2000823)2022 research Fund(No.1.220024.01)of Ulsan National Institute of Science&Technology(UNIST).
文摘Substitutional atomic doping of transition metal dichalcogenides(TMDs)in the chemical vapor deposition(CVD)process is a promising and effective strategy for modifying their physicochemical properties.However,the conventional CVD method only allows narrow-range modulation of the dopant concentration owing to the low reactivity of the precursors.Moreover,the growth of wafer-scale monolayer TMD films with high dopant concentrations is much more challenging.Herein,we report a facile doping approach based on liquid precursor-mediated CVD process for achieving high vanadium(V)doping in the MoS_(2)lattice with excellent doping uniformity and stability.The lateral growth of the host MoS_(2)lattice and the reactivity of the V precursor were simultaneously improved by introducing an alkali metal halide as a reaction promoter.The metal halide promoter enabled the wafer-scale synthesis of V-incorporated MoS_(2)monolayer film with excessively high doping concentrations.The excellent wafer-scale uniformity of the highly V-doped MoS_(2)film was confirmed through a series of microscopic,spectroscopic,and electrical analyses.
文摘We have developed a self-contained,liquid tunable microlens based on polyacrylate membranes integrated with compact on-chip thermo-pneumatic actuation fabricated using full-wafer processing.Silicone oil is used as the optical liquid,which is pushed or pulled into the lens cavity via an extended microfluidic channel structure without any pumps,valves or other mechanical means.The heat load generated by the thermal actuator is physically isolated from the lens chamber.The back focal length may be tuned from infinity to 4 mm with a maximum power consumption of 300 mW.The principal application is fine tuning of the back focal length,for which tuning time constants as small as 100 ms are suitable.
基金supported by Hunan Provincial Natural Science Foundation of China (grant No.2022JJ20085)Changsha Natural Science Foundation (grant No.kq2202092).
文摘Moore’s Law has been the driving force behind the semiconductor in-dustry for several decades,but as silicon-based transistors approach their physical limits,researchers are searching for new materials to sustain this exponential growth.Two-dimensional transition metal dichalcogenides(TMDs),with their atomically thin structure and en-ticing physical properties,have emerged as the most promising can-didates for downsizing and improving device integration.Embold-ened by the direction of achieving large-area and high-quality TMDs growth,wafer-scale TMDs growth strategies have been continuously developed,suggesting that TMDs are poised to become a new plat-form for next-generation electronic devices.In this review,advanced synthesis routes and inherent properties of wafer-scale TMDs were critically assessed.In addition,the performance in electronic devices was also discussed,providing an outlook on the opportunities and challenges that lie ahead in their development.
