Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta source.The time-related electrical properties were o...Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta source.The time-related electrical properties were obtained using Monte Carlo simulations.For the n-type ZnO,the Pt/ZnO Schottky diode had the highest energy conversion efficiency,and the Ni/ZnO Schottky diode had the largest Isc.The overall electrical performance of PN junctions is better than that of Schottky diodes.The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices,coming close to those of PN junctions.Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors,Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.展开更多
Third-generation-semiconductor zinc oxide is utilized as an energy converting material in a betavoltaic battery, where 0.06 Ci^(63) Ni and 8 Ci^(147) Pm are used as the beta sources. Based on a Monte Carlo simulation,...Third-generation-semiconductor zinc oxide is utilized as an energy converting material in a betavoltaic battery, where 0.06 Ci^(63) Ni and 8 Ci^(147) Pm are used as the beta sources. Based on a Monte Carlo simulation, the full scales of the devices are derived as 17 and 118 lm,respectively, for both sources. The influences of semiconductor doping concentrations on the electrical properties of the devices are analyzed. For a typical doping concentration N_A= 10^(17) cm^(-3), N_D= 10^(16) cm^(-3), the conversion efficiencies are 7.177% and 1.658%, respectively, using63 Ni and147 Pm sources. The calculation results of energy deposition in materials for the two sources show that the doping concentrations drop to 1 × 10^(13)–5×10^(14) cm^(-3) and 1 × 10^(12)–5×10^(13), and accordingly, the energy conversion efficiencies rise to 14.212% and 18.359%, respectively.展开更多
介绍了一种采用宽禁带半导体二氧化钛纳米管阵列薄膜材料制备β伏特效应同位素电池的方法.通过对金属钛片的电化学阳极氧化制备了垂直定向、有序排列的二氧化钛纳米管阵列薄膜,研究了退火条件对二氧化钛纳米管阵列薄膜半导体光电性能的...介绍了一种采用宽禁带半导体二氧化钛纳米管阵列薄膜材料制备β伏特效应同位素电池的方法.通过对金属钛片的电化学阳极氧化制备了垂直定向、有序排列的二氧化钛纳米管阵列薄膜,研究了退火条件对二氧化钛纳米管阵列薄膜半导体光电性能的影响.通过与镍-63辐射源的集成封装,形成三明治结构镍-63/二氧化钛纳米管阵列薄膜/钛片的β伏特同位素电池.实验结果表明,基于氩气氛围下450?C退火的黑色二氧化钛纳米管阵列薄膜具有高的氧空位缺陷浓度和宽的可见-紫外吸收光谱.在使用β辐射总能量为10 m Ci的镍-63辐射源时,同位素电池的开路电压为1.02 V,短路电流75.52 n A,最大有效转换效率为22.48%.展开更多
基金supported by the National Major Scientific Instruments and Equipment Development Projects(No.2012YQ240121)National Natural Science Foundation of China(No.11075064)
文摘Schottky diodes and PN junctions were utilized as energy converting structures in ZnO-based betavoltaic batteries,in which 0.101121 Ci 63Ni was selected as the beta source.The time-related electrical properties were obtained using Monte Carlo simulations.For the n-type ZnO,the Pt/ZnO Schottky diode had the highest energy conversion efficiency,and the Ni/ZnO Schottky diode had the largest Isc.The overall electrical performance of PN junctions is better than that of Schottky diodes.The lifetimes of Pt/ZnO and Ni/ZnO are longer than for other Schottky devices,coming close to those of PN junctions.Considering that Schottky diodes are easier to fabricate and independent of p-type semiconductors,Pt/ZnO and Ni/ZnO diodes offer alternatives to PN-junction-based betavoltaic batteries.
基金supported by the National Major Scientific Instruments and Equipment Development Projects(No.2012YQ240121)the National Natural Science Foundation of China(No.11075064)
文摘Third-generation-semiconductor zinc oxide is utilized as an energy converting material in a betavoltaic battery, where 0.06 Ci^(63) Ni and 8 Ci^(147) Pm are used as the beta sources. Based on a Monte Carlo simulation, the full scales of the devices are derived as 17 and 118 lm,respectively, for both sources. The influences of semiconductor doping concentrations on the electrical properties of the devices are analyzed. For a typical doping concentration N_A= 10^(17) cm^(-3), N_D= 10^(16) cm^(-3), the conversion efficiencies are 7.177% and 1.658%, respectively, using63 Ni and147 Pm sources. The calculation results of energy deposition in materials for the two sources show that the doping concentrations drop to 1 × 10^(13)–5×10^(14) cm^(-3) and 1 × 10^(12)–5×10^(13), and accordingly, the energy conversion efficiencies rise to 14.212% and 18.359%, respectively.
文摘介绍了一种采用宽禁带半导体二氧化钛纳米管阵列薄膜材料制备β伏特效应同位素电池的方法.通过对金属钛片的电化学阳极氧化制备了垂直定向、有序排列的二氧化钛纳米管阵列薄膜,研究了退火条件对二氧化钛纳米管阵列薄膜半导体光电性能的影响.通过与镍-63辐射源的集成封装,形成三明治结构镍-63/二氧化钛纳米管阵列薄膜/钛片的β伏特同位素电池.实验结果表明,基于氩气氛围下450?C退火的黑色二氧化钛纳米管阵列薄膜具有高的氧空位缺陷浓度和宽的可见-紫外吸收光谱.在使用β辐射总能量为10 m Ci的镍-63辐射源时,同位素电池的开路电压为1.02 V,短路电流75.52 n A,最大有效转换效率为22.48%.
