In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field（REBULF） lateral double-diffused metal–oxide-semiconductor（LDMOS） transistor is...In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field（REBULF） lateral double-diffused metal–oxide-semiconductor（LDMOS） transistor is presented. The dependences of the breakdown voltage on the buried n-layer depth, thickness, and doping concentration are discussed in detail.The REBULF criterion and the optimal vertical electric field distribution condition are derived on the basis of the optimization of the electric field distribution. The breakdown voltage of the REBULF LDMOS transistor is always higher than that of a single reduced surface field（RESURF） LDMOS transistor, and both analytical and numerical results show that it is better to make a thick n-layer buried deep into the p-substrate.展开更多
This paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMDG)tunnel FET.The TMDG TFET device model is developed using a p...This paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMDG)tunnel FET.The TMDG TFET device model is developed using a parabolic approximation method in the channel depletion space and a boundary state of affairs across the drain and source.The TMDG TFET device is used to analyze the electrical performance of the TMDG structure in terms of changes in potential voltage,lateral and vertical electric field.Because the TMDG TFET has a simple compact structure,the surface potential is computationally efficient and,therefore,may be utilized to analyze and characterize the gate-controlled devices.Furthermore,using Kane's model,the current across the drain can be modeled.The graph results achieved from this device model are close to the data collected from the technology computer aided design(TCAD)simulation.展开更多
Using first-principles calculations,including Grimme D2 method for van der Waals interactions,we investigate the tuning electronic properties of bilayer zirconium disulfides（ZrS_2/ subjected to vertical electric fiel...Using first-principles calculations,including Grimme D2 method for van der Waals interactions,we investigate the tuning electronic properties of bilayer zirconium disulfides（ZrS_2/ subjected to vertical electric field and normal compressive strain.The band gap of ZrS_2 bilayer can be flexibly tuned by vertical external electric field.Due to the Stark effect,at critical electric fields about 1.4 V/？,semiconducting-metallic transition presents.In addition,our results also demonstrated that the compressive strain has an important impact on the electronic properties of ZrS_2 bilayer sheet.The widely tunable band gaps confirm possibilities for its applications in electronics and optoelectronics.展开更多
基金Project supported by the Scientific Research Fund of Education Department of Sichuan Province,China(Grant No.14ZB0132)the Key Project of Xihua University,China(Grant No.z1323318)
文摘In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field（REBULF） lateral double-diffused metal–oxide-semiconductor（LDMOS） transistor is presented. The dependences of the breakdown voltage on the buried n-layer depth, thickness, and doping concentration are discussed in detail.The REBULF criterion and the optimal vertical electric field distribution condition are derived on the basis of the optimization of the electric field distribution. The breakdown voltage of the REBULF LDMOS transistor is always higher than that of a single reduced surface field（RESURF） LDMOS transistor, and both analytical and numerical results show that it is better to make a thick n-layer buried deep into the p-substrate.
基金supported by Women Scientist Scheme-A, Department of Science and Technology, New Delhi, Government of India, under the Grant SR/WOS-A/ET-5/2017
文摘This paper presents a compact two-dimensional analytical device model of surface potential,in addition to electric field of triple-material double-gate(TMDG)tunnel FET.The TMDG TFET device model is developed using a parabolic approximation method in the channel depletion space and a boundary state of affairs across the drain and source.The TMDG TFET device is used to analyze the electrical performance of the TMDG structure in terms of changes in potential voltage,lateral and vertical electric field.Because the TMDG TFET has a simple compact structure,the surface potential is computationally efficient and,therefore,may be utilized to analyze and characterize the gate-controlled devices.Furthermore,using Kane's model,the current across the drain can be modeled.The graph results achieved from this device model are close to the data collected from the technology computer aided design(TCAD)simulation.
基金Project support by the CAS/SAFEA International Partnership Program for Creative Research Teams and the Basic and Frontier Technology Research of Henan(No.142300410244)
文摘Using first-principles calculations,including Grimme D2 method for van der Waals interactions,we investigate the tuning electronic properties of bilayer zirconium disulfides（ZrS_2/ subjected to vertical electric field and normal compressive strain.The band gap of ZrS_2 bilayer can be flexibly tuned by vertical external electric field.Due to the Stark effect,at critical electric fields about 1.4 V/？,semiconducting-metallic transition presents.In addition,our results also demonstrated that the compressive strain has an important impact on the electronic properties of ZrS_2 bilayer sheet.The widely tunable band gaps confirm possibilities for its applications in electronics and optoelectronics.
