Ferromagnetic semiconductor Ga_(1–x)Mn_(x)As_(1–y)P_(y) thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers.In this regime,...Ferromagnetic semiconductor Ga_(1–x)Mn_(x)As_(1–y)P_(y) thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers.In this regime,we report a colossal negative magnetoresistance(CNMR)coexisting with a saturated magnetic moment,unlike in the traditional magnetic semiconductor Ga_(1–x)Mn_(x)As.By analyzing the temperature dependence of the resistivity at fixed magnetic field,we demonstrate that the CNMR can be consistently described by the field dependence of the localization length,which relates to a field dependent mobility edge.This dependence is likely due to the random environment of Mn atoms in Ga_(1-x)Mn_(x)As_(1-y)P_(y) which causes a random spatial distribution of the mobility that is suppressed by an increasing magnetic field.展开更多
The double-doped La2/3＋4x/3Sr1/3-4x/3Mn1-xMgxO3 samples with fixed Mn^3＋/Mn^4＋ ratio equal to 2/1 are investigated by means of magnetism and transport measurements. Phase separation is observed at temperature highe...The double-doped La2/3＋4x/3Sr1/3-4x/3Mn1-xMgxO3 samples with fixed Mn^3＋/Mn^4＋ ratio equal to 2/1 are investigated by means of magnetism and transport measurements. Phase separation is observed at temperature higher than T^onset c for x = 0.10 and 0.15. For x = 0.10, rather strong phase separation induces drastic magnetic random potential and results in the localization of carriers. Thus, the varlable-range hopping process dominates. For other samples, there is no or only weak phase separation above T^onset c. Thus, thermal activation mechanism is responsible for the high temperature transport behaviour. For x = 0.20 and 0.25, unexpected AFM behaviour is observed at low temperature. All these results are well understood by considering the special role of the ＂double-doping＂.展开更多
The influence of heavy samarion （Sm） doping （0.40≤x≤0.60） on magnetic and electric properties of La0.67-xSmxSr0.33MnO3 was investigated by measuring the magnetization-temperature （M - T） curves, magnetization-...The influence of heavy samarion （Sm） doping （0.40≤x≤0.60） on magnetic and electric properties of La0.67-xSmxSr0.33MnO3 was investigated by measuring the magnetization-temperature （M - T） curves, magnetization-magnetic density （ M - H） curves, resistivity-temperature （ρ- T） curves and magnetoresistivity-temperature （ MR - T） curves of the samples under different temperatures. It is found that, form from long-range ferromagnetic order to spin-cluster glass with the increase of Sm doping amount, the samples transstate and anti-ferromagnetic state; and when x = 0.60, the transport property becomes abnormal under magnetic background; and the magnetic structure changes and extra magnetic coupling induced by doping leads to colossal magnetoresistance effect. The transport mechanism of metallic conduction at low temperature is mainly electron-magneton interaction and can be fitted by the formula ρ = ρ0 ＋ AT^4.5, and the insulatorlike transport mechanism on high temperature range is mainly the function of variable-range hopping and can be fitted by the formula ρ = ρ0exp（T0/T）^1/4. In the formulas above, p is resistivity, T is temperature, and A, ρ0, T0 are constants.展开更多
基金This work was supported by the National Science Foundation Grant No.DMR 1905277.
文摘Ferromagnetic semiconductor Ga_(1–x)Mn_(x)As_(1–y)P_(y) thin films go through a metal–insulator transition at low temperature where electrical conduction becomes driven by hopping of charge carriers.In this regime,we report a colossal negative magnetoresistance(CNMR)coexisting with a saturated magnetic moment,unlike in the traditional magnetic semiconductor Ga_(1–x)Mn_(x)As.By analyzing the temperature dependence of the resistivity at fixed magnetic field,we demonstrate that the CNMR can be consistently described by the field dependence of the localization length,which relates to a field dependent mobility edge.This dependence is likely due to the random environment of Mn atoms in Ga_(1-x)Mn_(x)As_(1-y)P_(y) which causes a random spatial distribution of the mobility that is suppressed by an increasing magnetic field.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10504029 and 10334090）, and the State Key Project of Fundamental Research, China （Grant No 001CB610604）.
文摘The double-doped La2/3＋4x/3Sr1/3-4x/3Mn1-xMgxO3 samples with fixed Mn^3＋/Mn^4＋ ratio equal to 2/1 are investigated by means of magnetism and transport measurements. Phase separation is observed at temperature higher than T^onset c for x = 0.10 and 0.15. For x = 0.10, rather strong phase separation induces drastic magnetic random potential and results in the localization of carriers. Thus, the varlable-range hopping process dominates. For other samples, there is no or only weak phase separation above T^onset c. Thus, thermal activation mechanism is responsible for the high temperature transport behaviour. For x = 0.20 and 0.25, unexpected AFM behaviour is observed at low temperature. All these results are well understood by considering the special role of the ＂double-doping＂.
文摘The influence of heavy samarion （Sm） doping （0.40≤x≤0.60） on magnetic and electric properties of La0.67-xSmxSr0.33MnO3 was investigated by measuring the magnetization-temperature （M - T） curves, magnetization-magnetic density （ M - H） curves, resistivity-temperature （ρ- T） curves and magnetoresistivity-temperature （ MR - T） curves of the samples under different temperatures. It is found that, form from long-range ferromagnetic order to spin-cluster glass with the increase of Sm doping amount, the samples transstate and anti-ferromagnetic state; and when x = 0.60, the transport property becomes abnormal under magnetic background; and the magnetic structure changes and extra magnetic coupling induced by doping leads to colossal magnetoresistance effect. The transport mechanism of metallic conduction at low temperature is mainly electron-magneton interaction and can be fitted by the formula ρ = ρ0 ＋ AT^4.5, and the insulatorlike transport mechanism on high temperature range is mainly the function of variable-range hopping and can be fitted by the formula ρ = ρ0exp（T0/T）^1/4. In the formulas above, p is resistivity, T is temperature, and A, ρ0, T0 are constants.
