Electron systems in low dimensions are enriched with many superior properties for both fundamental research and technical developments. Wide tunability of electron density, high mobility of motion, and feasible contro...Electron systems in low dimensions are enriched with many superior properties for both fundamental research and technical developments. Wide tunability of electron density, high mobility of motion, and feasible controllability in microscales are the most prominent advantages that researchers strive for. Nevertheless, it is always difficult to fulfill all in one solid-state system. Two-dimensional electron systems(2DESs) floating above the superfluid helium surfaces are thought to meet these three requirements simultaneously, ensured by the atomic smoothness of surfaces and the electric neutrality of helium. Here we report our recent work in preparing, characterizing, and manipulating 2DESs on superfluid helium. We realized a tunability of electron density over one order of magnitude and tuned their transport properties by varying electron distribution and measurement frequency. The work we engage in is crucial for advancing research in many-body physics and for development of single-electron quantum devices rooted in these electron systems.展开更多
As emerging two-dimensional(2D)materials,carbides and nitrides(MXenes)could be solid solutions or organized structures made up of multi-atomic layers.With remarkable and adjustable electrical,optical,mechanical,and el...As emerging two-dimensional(2D)materials,carbides and nitrides(MXenes)could be solid solutions or organized structures made up of multi-atomic layers.With remarkable and adjustable electrical,optical,mechanical,and electrochemical characteristics,MXenes have shown great potential in brain-inspired neuromorphic computing electronics,including neuromorphic gas sensors,pressure sensors and photodetectors.This paper provides a forward-looking review of the research progress regarding MXenes in the neuromorphic sensing domain and discussed the critical challenges that need to be resolved.Key bottlenecks such as insufficient long-term stability under environmental exposure,high costs,scalability limitations in large-scale production,and mechanical mismatch in wearable integration hinder their practical deployment.Furthermore,unresolved issues like interfacial compatibility in heterostructures and energy inefficiency in neu-romorphic signal conversion demand urgent attention.The review offers insights into future research directions enhance the fundamental understanding of MXene properties and promote further integration into neuromorphic computing applications through the convergence with various emerging technologies.展开更多
Superconductivity in two-dimensional(2D)materials has attracted considerable attention due to their unique physical properties and potential for high-temperature operation.Boron-based 2D compounds are particularly pro...Superconductivity in two-dimensional(2D)materials has attracted considerable attention due to their unique physical properties and potential for high-temperature operation.Boron-based 2D compounds are particularly promising,thanks to their structural flexibility and the emergence of strong electron-phonon coupling(EPC)associated with light elements.While most previous studies have focused on stabilizing boron sheets through metal incorporation,we propose an alternative approach based on multicenter bonding enabled by group-IV non-metallic elements(Si,Ge,Sn).The resulting XB_(2)(X=Si,Ge,Sn)monolayers,which adopt a MgB_(2)-like monolayer configuration,are stabilized by a seven-center two-electron(7c-2e)bonding network between the X atoms and the boron honeycomb lattice.This bonding lowers the energy of the B-p_(z)orbitals and enhances lattice stability.The superconducting transition temperature(T_(c))increases significantly with the atomic number of X—from 4.7 K in SiB_(2)to 13.3 K in GeB_(2)and 24.9 K in SnB_(2)—driven by an increased carrier density near the Fermi level(E_(F))and softening of the high-frequency E_(2)phonon mode.Furthermore,we design a SnB_4 monolayer,in which a Sn layer is sandwiched between the two boron layers.This structure enriches in-plane phonon modes and strengthens EPC,yielding a T_(c)of 38 K,close to the McMillan limit.These findings highlight the critical role of multicenter bonding and targeted phonon engineering in enabling high-T_(c)2D boron-based superconductors.展开更多
Two-dimensional(2D)multilayer kagome materials hold significant research value for regulating kagome-related physical properties and exploring quantum effects.However,their development is hindered by the scarcity of a...Two-dimensional(2D)multilayer kagome materials hold significant research value for regulating kagome-related physical properties and exploring quantum effects.However,their development is hindered by the scarcity of available material systems,making the identification of novel 2D multilayer kagome candidates particularly important.In this work,three types of 2D materials with trilayer kagome lattices,namely Sc_(6)S_(5)X_(6)(X=Cl,Br,I),are predicted based on first-principles calculations.These 2D materials feature two kagome lattices composed of Sc atoms and one kagome lattice composed of S atoms.Stability analysis indicates that these materials can exist as free-standing 2D materials.Electronic structure calculations reveal that Sc_(6)S_(5)X_(6)are narrow-bandgap semiconductors(0.76–0.95 e V),with their band structures exhibiting flat bands contributed by Sc-based kagome lattices and Dirac band gaps resulting from symmetry breaking.The sulfur-based kagome lattice in the central layer contributes an independent flat band below the Fermi level.Additionally,Sc_(6)S_(5)X_(6)exhibit high carrier mobility,with hole and electron mobilities reaching up to 10^(3)cm^(2)·V^(-1)·s^(-1),indicating potential applications in low-dimensional electronic devices.This work provides an excellent example for the development of novel multilayer 2D kagome materials.展开更多
The rapid growth of consumer electronics,Internet of Things,electric vehicles,and grid-scale storage has led to an urgent need for rechargeable batteries that can provide both high energy density and fast charging cap...The rapid growth of consumer electronics,Internet of Things,electric vehicles,and grid-scale storage has led to an urgent need for rechargeable batteries that can provide both high energy density and fast charging capability[1].Among the promising candidates,anode-free lithium metal batteries have attracted increasing attention.They employ only a conductive substrate,such as copper(Cu)foil,without any anode active material.This design,which pairs a fully lithiated cathode with a bare current collector to eliminate excess lithium,offers significant advantages in reducing material cost,simplifying manufacturing,and improving energy density[2].展开更多
Two-dimensional(2D)semiconductors have emerged as an ideal platform for fundamental research and a promising candidate beyond silicon materials in future transistors due to their ultrathin thickness and excellent elec...Two-dimensional(2D)semiconductors have emerged as an ideal platform for fundamental research and a promising candidate beyond silicon materials in future transistors due to their ultrathin thickness and excellent electrical properties.However,the practical application of 2D semiconductors still faces significant challenges.The excellent interface quality of traditional silicon-based semiconductor devices is crucial for their outstanding performance,whereas the interface issues in 2D semiconductor/dielectric systems remain unresolved,resulting in device performance far below expectations.Therefore,further study of the interface in 2D semiconductor/dielectric systems and finding appropriate methods to quantify interface quality,as well as interface optimization strategies,are critical for driving the practical application of 2D semiconductors.In this review,we discuss the issues existing at the 2D semiconductor/dielectric interface,quantitative characterization methods and optimization strategies for interface quality.This includes comparing the advantages and disadvantages of traditional characterization methods for silicon-based semiconductors when applied to 2D semiconductors,as well as the development of strategies to improve interface quality and enhance the performance of 2D devices.Finally,in the outlook,we outline the development directions for improving the interface quality of 2D semiconductor/dielectric systems.展开更多
Moiré superlattices have revolutionized the study of two-dimensional materials, enabling unprecedented control over their electronic, magnetic, optical, and mechanical properties. This review provides a comprehen...Moiré superlattices have revolutionized the study of two-dimensional materials, enabling unprecedented control over their electronic, magnetic, optical, and mechanical properties. This review provides a comprehensive analysis of the latest advancements in moiré physics, focusing on the formation of moiré superlattices due to rotational misalignment or lattice mismatch in two-dimensional materials. These superlattices induce flat band structures and strong correlation effects,leading to the emergence of exotic quantum phases, such as unconventional superconductivity, correlated insulating states,and fractional quantum anomalous Hall effects. The review also explores the underlying mechanisms of these phenomena and discusses the potential technological applications of moiré physics, offering insights into future research directions in this rapidly evolving field.展开更多
The structural,relative stability,and electronic properties of two-dimensional AsP_(2)X_(6)(X=S,Se)were predicted and studied using the particle-swarm optimization method and first principles calculations.We proposed ...The structural,relative stability,and electronic properties of two-dimensional AsP_(2)X_(6)(X=S,Se)were predicted and studied using the particle-swarm optimization method and first principles calculations.We proposed two low energy structures with P312 and P-31m phases,both of which the structures are hexagonal in shape and show non-centrosymmetry for the P312 phase and centrosymmetry for the P-31m phase.According to our results,two structural phases are found to be stable thermally and dynamically.The P312 phase of AsP_(2)X_(6)(X=S,Se)are indirect semiconductors with band gaps of 2.44 eV(AsP2S6)and 2.18 eV(AsP2Se6)at the HSE06 level,and their absorption coefficients are predicted to reach the order of 10^(5)cm^(-1)from visible light to ultraviolet region,but the main absorption is manly in the ultraviolet region.The P-31m phase of AsP_(2)X_(6)(X=S,Se)exhibits metal character with the Fermi surface mainly occupied by the p orbital of S/Se.Remarkably,estimated by first principles calculations,the P-31m AsP2S6 is found to be an intrinsic phonon-mediated superconductor with a relatively high critical superconducting temperature of about 13.4 K,and the P-31m AsP2Se6 only has a superconducting temperature of 1.4 K,which suggest that the P-31m AsP2S6 may be a good candidate for a nanoscale superconductor.展开更多
The two-dimensional electron gas(2DEG)formed at the interface between two oxide insulators provides new opportunities for electronics and spintronics.The broken inversion symmetry at the heterointerface results in a R...The two-dimensional electron gas(2DEG)formed at the interface between two oxide insulators provides new opportunities for electronics and spintronics.The broken inversion symmetry at the heterointerface results in a Rashba spin-orbit coupling(RSOC)effect that enables the conversion between spin and charge currents.However,conducting oxide interfaces that simultaneously exhibit strong RSOC and high carrier mobility-a combination query for achieving high spin-to-charge inter-conversion efficiencies-remain scarce.Herein,we report a correlated 2DEG with giant Rashba splitting and high electron mobility in(111)-oriented EuTiO_(3)/KTaO_(3)(ETO/KTO)heterostructures under light illumination.Upon light modulation,a unique carrier-dependent giant anomalous Hall effect,the signature of spin-polarized 2DEG,emerges with a sign crossover at a carrier density of approximately 5.0×10^(13)cm^(-2),highlighting dramatic changes in the band topology of KTO(111)interface.Furthermore,at 2 K,the carrier mobility is enhanced from 103 cm^(2)·V^(-1)·s^(-1)to 1800 cm^(2)·V^(-1)·s^(-1),a remarkable enhancement of approximately 20 times.Accompanying with a giant Rashba coefficient αR up to 360meV·˚A,this high mobility ferromagnetic 5d oxide 2DEG is predicted to achieve a giant spin-to-charge conversion efficiency ofλ~10 nm,showing great potential for designing low-power spin-orbitronic devices.展开更多
Magnetotransport properties of two-dimensional electron gases （2DEG） in AlxGa1-x N/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in hig...Magnetotransport properties of two-dimensional electron gases （2DEG） in AlxGa1-x N/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields. It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.展开更多
The electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases with different surface morphology has been investigated.Large electron mobility anisotropy is found for the sample with anisotropic mor...The electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases with different surface morphology has been investigated.Large electron mobility anisotropy is found for the sample with anisotropic morphology,which is mainly induced by the threading dislocations in the InAs layer.For the samples with isotropic morphology,the electron mobility is also anisotropic and could be attributed to the piezoelectric scattering.At low temperature (below transition temperature),the piezoelectric scattering is enhanced with the increase of temperature,leading to the increase of electron mobility anisotropy.At high temperature (above transition temperature),the phonon scattering becomes dominant.Because the phonon scattering is isotropic,the electron mobility anisotropy in all the samples would be reduced.Our results provide useful information for the comprehensive understanding of electron mobility anisotropy in the (Al,Ga)Sb/InAs system.展开更多
The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are chang...The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s（300 K）and42040 cm^2/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.展开更多
Gallium nitride(Ga N)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to particles radiation,which can cause the degradation in electrical performance.We investigate the effect of pro...Gallium nitride(Ga N)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to particles radiation,which can cause the degradation in electrical performance.We investigate the effect of proton irradiation on the concentration of two-dimensional electron gas(2 DEG)in Ga N-based HEMTs.Coupled Schr¨odinger’s and Poisson’s equations are solved to calculate the band structure and the concentration of 2 DEG by the self-consistency method,in which the vacancies caused by proton irradiation are taken into account.Proton irradiation simulation for Ga N-based HEMT is carried out using the stopping and range of ions in matter(SRIM)simulation software,after which a theoretical model is established to analyze how proton irradiation affects the concentration of 2 DEG.Irradiated by protons with high fluence and low energy,a large number of Ga vacancies appear inside the device.The results indicate that the ionized Ga vacancies in the Ga N cap layer and the Al Ga N layer will affect the Fermi level,while the Ga vacancies in the Ga N layer will trap the two-dimensional electrons in the potential well.Proton irradiation significantly reduced the concentration of 2 DEG by the combined effect of these two mechanisms.展开更多
Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electro...Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas （2DEG） at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.展开更多
Models for calculating the sheet densities of two-dimensional electron gas （2DEG） induced by spontaneous and piezoelectric polarization in A1GaN/GaN, A1GaN/A1N/GaN, and GaN/A1GaN/GaN heterostructures are provided. T...Models for calculating the sheet densities of two-dimensional electron gas （2DEG） induced by spontaneous and piezoelectric polarization in A1GaN/GaN, A1GaN/A1N/GaN, and GaN/A1GaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.展开更多
To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al c...To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.展开更多
The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional el...The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.展开更多
Electronic, elastic and piezoelectric properties of two-dimensional （2D） group-IV buckled monolayers （GeSi, SnSi and SnGe） are studied by first principle calculations. According to our calculations, SnSi and SnGe ...Electronic, elastic and piezoelectric properties of two-dimensional （2D） group-IV buckled monolayers （GeSi, SnSi and SnGe） are studied by first principle calculations. According to our calculations, SnSi and SnGe are good 2D piezoelectric materials with large piezoelectric coefficients. The values of d11d11 of SnSi and SnGe are 5.04pm/V and 5.42pm/V, respectively, which are much larger than 2D MoS2 （3.6pm/V） and are comparable with some frequently used bulk materials （e.g., wurtzite AlN 5.1pm/V）. Charge transfer is calculated by the L wdin analysis and we find that the piezoelectric coefficients （d11d11 and d31） are highly dependent on the polarizabilities of the anions and cations in group-IV monolayers.展开更多
Two-dimensional(2D)boron nitride(BN),the so-called“white graphene,”has demonstrated a great potential in various fields,particularly in electronics and energy,by utilizing its wide bandgap(~5.5 eV),superior thermal ...Two-dimensional(2D)boron nitride(BN),the so-called“white graphene,”has demonstrated a great potential in various fields,particularly in electronics and energy,by utilizing its wide bandgap(~5.5 eV),superior thermal stability,high thermal conductance,chemical inertness,and outstanding dielectric properties.However,to further optimize the performances from the view of structure-property relationship,the determinative factors such as crystallite sizes,layer thickness,dispersibility,and surface functionalities should be precisely controlled and adjusted.Therefore,in this review,the synthesis and functionalization methods including“top-down”and“bottom-up”strategies,and non-covalent and covalent modifications for 2D BN are systematically classified and discussed at first,thus catering for the requirements of versatile applications.Then,the progresses of 2D BN applied in the fields of microelectronics such as fieldeffect transistors and dielectric capacitors,energy domains such as thermal energy management and conversion,and batteries and supercapacitors are summarized to highlight the importance of 2D BN.Notably,these contents not only contain the state-of-the-art 2D BN composites,but also bring the current novel design of 2D BN-based microelectronic units.Finally,the challenges and perspectives are proposed to better broaden the scope of this material.Therefore,this review will pave an all-around way for understanding,utilizing,and applying 2D BN in future electronics and energy applications.展开更多
Flexible electronics technology is considered as a revolutionary technology to unlock the bottleneck of traditional rigid electronics that prevalent for decades,thereby fueling the next-generation electronics.In the p...Flexible electronics technology is considered as a revolutionary technology to unlock the bottleneck of traditional rigid electronics that prevalent for decades,thereby fueling the next-generation electronics.In the past few decades,the research on flexible electronic devices based on organic materials has witnessed rapid development and substantial achievements,and inorganic semiconductors are also now beginning to shine in the field of flexible electronics.As validated by the latest research,some of the inorganic semiconductors,particularly those at low dimension,unexpectedly exhibited excellent mechanical flexibility on top of superior electrical properties.Herein,we bring together a comprehensive analysis on the recently burgeoning low-dimension inorganic semiconductor materials in flexible electronics,including one-dimensional(1D)inorganic semiconductor nanowires(NWs)and two-dimensional(2D)transition metal dichalcogenides(TMDs).The fundamental electrical properties,optical properties,mechanical properties and strain engineering of materials,and their performance in flexible device applications are discussed in detail.We also propose current challenges and predict future development directions including material synthesis and device fabrication and integration.展开更多
基金supported by the Beijing Natural Science Foundation (Grant No. JQ21002)the National Natural Science Foundation of China (Grant No. T2325026)+2 种基金the National Key R&D Program of China(Grant No. 2021YFA1401902)the Key Research Program of Frontier Sciences,CAS (Grant No. ZDBS-LY-SLH0010)the CAS Project for Young Scientists in Basic Research (Grant No. YSBR-047)。
文摘Electron systems in low dimensions are enriched with many superior properties for both fundamental research and technical developments. Wide tunability of electron density, high mobility of motion, and feasible controllability in microscales are the most prominent advantages that researchers strive for. Nevertheless, it is always difficult to fulfill all in one solid-state system. Two-dimensional electron systems(2DESs) floating above the superfluid helium surfaces are thought to meet these three requirements simultaneously, ensured by the atomic smoothness of surfaces and the electric neutrality of helium. Here we report our recent work in preparing, characterizing, and manipulating 2DESs on superfluid helium. We realized a tunability of electron density over one order of magnitude and tuned their transport properties by varying electron distribution and measurement frequency. The work we engage in is crucial for advancing research in many-body physics and for development of single-electron quantum devices rooted in these electron systems.
基金supported by the NSFC(12474071)Natural Science Foundation of Shandong Province(ZR2024YQ051,ZR2025QB50)+6 种基金Guangdong Basic and Applied Basic Research Foundation(2025A1515011191)the Shanghai Sailing Program(23YF1402200,23YF1402400)funded by Basic Research Program of Jiangsu(BK20240424)Open Research Fund of State Key Laboratory of Crystal Materials(KF2406)Taishan Scholar Foundation of Shandong Province(tsqn202408006,tsqn202507058)Young Talent of Lifting engineering for Science and Technology in Shandong,China(SDAST2024QTB002)the Qilu Young Scholar Program of Shandong University。
文摘As emerging two-dimensional(2D)materials,carbides and nitrides(MXenes)could be solid solutions or organized structures made up of multi-atomic layers.With remarkable and adjustable electrical,optical,mechanical,and electrochemical characteristics,MXenes have shown great potential in brain-inspired neuromorphic computing electronics,including neuromorphic gas sensors,pressure sensors and photodetectors.This paper provides a forward-looking review of the research progress regarding MXenes in the neuromorphic sensing domain and discussed the critical challenges that need to be resolved.Key bottlenecks such as insufficient long-term stability under environmental exposure,high costs,scalability limitations in large-scale production,and mechanical mismatch in wearable integration hinder their practical deployment.Furthermore,unresolved issues like interfacial compatibility in heterostructures and energy inefficiency in neu-romorphic signal conversion demand urgent attention.The review offers insights into future research directions enhance the fundamental understanding of MXene properties and promote further integration into neuromorphic computing applications through the convergence with various emerging technologies.
基金supported by the National Natural Science Foundation of China(Grant Nos.22372142,12304028,12404027)the Foreign Expert Introduction Program(Grant No.G2023003004L)+6 种基金the Central Guiding Local Science and Technology Development Fund Projects(Grant No.236Z7605G)the Natural Science Foundation of Hebei Province(Grant Nos.B2024203051,A2024203023,A2024203002)the Science and Technology Project of Hebei Education Department(Grant No.JZX2023020)the Innovation Capability Improvement Project of Hebei Province(Grant No.22567605H)the Hebei Province Yan Zhao Huang Jin Tai Talent Program(Postdoctoral Platform,Grant No.B2024003003)the financial support from the Spanish Ministry of Science and Innovation(Grant No.PID2022139230NB-I00)the Department of Education,Universities and Research of the Basque Government and the University of the Basque Country(Grant No.IT1707-22)。
文摘Superconductivity in two-dimensional(2D)materials has attracted considerable attention due to their unique physical properties and potential for high-temperature operation.Boron-based 2D compounds are particularly promising,thanks to their structural flexibility and the emergence of strong electron-phonon coupling(EPC)associated with light elements.While most previous studies have focused on stabilizing boron sheets through metal incorporation,we propose an alternative approach based on multicenter bonding enabled by group-IV non-metallic elements(Si,Ge,Sn).The resulting XB_(2)(X=Si,Ge,Sn)monolayers,which adopt a MgB_(2)-like monolayer configuration,are stabilized by a seven-center two-electron(7c-2e)bonding network between the X atoms and the boron honeycomb lattice.This bonding lowers the energy of the B-p_(z)orbitals and enhances lattice stability.The superconducting transition temperature(T_(c))increases significantly with the atomic number of X—from 4.7 K in SiB_(2)to 13.3 K in GeB_(2)and 24.9 K in SnB_(2)—driven by an increased carrier density near the Fermi level(E_(F))and softening of the high-frequency E_(2)phonon mode.Furthermore,we design a SnB_4 monolayer,in which a Sn layer is sandwiched between the two boron layers.This structure enriches in-plane phonon modes and strengthens EPC,yielding a T_(c)of 38 K,close to the McMillan limit.These findings highlight the critical role of multicenter bonding and targeted phonon engineering in enabling high-T_(c)2D boron-based superconductors.
基金supported by the Fundamental Research Funds for the Central Universities(WUT:2024IVA052 and Grant No.104972025KFYjc0089)。
文摘Two-dimensional(2D)multilayer kagome materials hold significant research value for regulating kagome-related physical properties and exploring quantum effects.However,their development is hindered by the scarcity of available material systems,making the identification of novel 2D multilayer kagome candidates particularly important.In this work,three types of 2D materials with trilayer kagome lattices,namely Sc_(6)S_(5)X_(6)(X=Cl,Br,I),are predicted based on first-principles calculations.These 2D materials feature two kagome lattices composed of Sc atoms and one kagome lattice composed of S atoms.Stability analysis indicates that these materials can exist as free-standing 2D materials.Electronic structure calculations reveal that Sc_(6)S_(5)X_(6)are narrow-bandgap semiconductors(0.76–0.95 e V),with their band structures exhibiting flat bands contributed by Sc-based kagome lattices and Dirac band gaps resulting from symmetry breaking.The sulfur-based kagome lattice in the central layer contributes an independent flat band below the Fermi level.Additionally,Sc_(6)S_(5)X_(6)exhibit high carrier mobility,with hole and electron mobilities reaching up to 10^(3)cm^(2)·V^(-1)·s^(-1),indicating potential applications in low-dimensional electronic devices.This work provides an excellent example for the development of novel multilayer 2D kagome materials.
文摘The rapid growth of consumer electronics,Internet of Things,electric vehicles,and grid-scale storage has led to an urgent need for rechargeable batteries that can provide both high energy density and fast charging capability[1].Among the promising candidates,anode-free lithium metal batteries have attracted increasing attention.They employ only a conductive substrate,such as copper(Cu)foil,without any anode active material.This design,which pairs a fully lithiated cathode with a bare current collector to eliminate excess lithium,offers significant advantages in reducing material cost,simplifying manufacturing,and improving energy density[2].
基金financially supported by the National Key R&D Program of China(No.2023YFE0210800)the National Natural Science Foundation of China(Nos.52202171,22350003,and U21A2069)+2 种基金the Hubei Provincial Natural Science Foundation of China(No.2024AFA012)the Shenzhen Science and Technology Program(Nos.JCYJ20240813153403005 and JCYJ20220818102215033)the Guangdong Basic and Applied Basic Research Foundation(No.2023B1515120041).
文摘Two-dimensional(2D)semiconductors have emerged as an ideal platform for fundamental research and a promising candidate beyond silicon materials in future transistors due to their ultrathin thickness and excellent electrical properties.However,the practical application of 2D semiconductors still faces significant challenges.The excellent interface quality of traditional silicon-based semiconductor devices is crucial for their outstanding performance,whereas the interface issues in 2D semiconductor/dielectric systems remain unresolved,resulting in device performance far below expectations.Therefore,further study of the interface in 2D semiconductor/dielectric systems and finding appropriate methods to quantify interface quality,as well as interface optimization strategies,are critical for driving the practical application of 2D semiconductors.In this review,we discuss the issues existing at the 2D semiconductor/dielectric interface,quantitative characterization methods and optimization strategies for interface quality.This includes comparing the advantages and disadvantages of traditional characterization methods for silicon-based semiconductors when applied to 2D semiconductors,as well as the development of strategies to improve interface quality and enhance the performance of 2D devices.Finally,in the outlook,we outline the development directions for improving the interface quality of 2D semiconductor/dielectric systems.
基金Project supported by the National Key R&D Program of China (Grant No. 2019YFA0307800)the National Natural Science Foundation of China (Grant No. 12074377)+2 种基金Fundamental Research Funds for the Central Universities,the International Partnership Program of Chinese Academy of Sciences (Grant No. 211211KYSB20210007)the China Postdoctoral Science Foundation (Grant No. 2024M753465)the Postdoctoral Fellowship Program (Grade C) of China Postdoctoral Science Foundation (Grant No. GZC20241893)。
文摘Moiré superlattices have revolutionized the study of two-dimensional materials, enabling unprecedented control over their electronic, magnetic, optical, and mechanical properties. This review provides a comprehensive analysis of the latest advancements in moiré physics, focusing on the formation of moiré superlattices due to rotational misalignment or lattice mismatch in two-dimensional materials. These superlattices induce flat band structures and strong correlation effects,leading to the emergence of exotic quantum phases, such as unconventional superconductivity, correlated insulating states,and fractional quantum anomalous Hall effects. The review also explores the underlying mechanisms of these phenomena and discusses the potential technological applications of moiré physics, offering insights into future research directions in this rapidly evolving field.
基金Funded by the National Natural Science Foundation of China(No.U1904612)the Natural Science Foundation of Henan Province(No.222300420506)。
文摘The structural,relative stability,and electronic properties of two-dimensional AsP_(2)X_(6)(X=S,Se)were predicted and studied using the particle-swarm optimization method and first principles calculations.We proposed two low energy structures with P312 and P-31m phases,both of which the structures are hexagonal in shape and show non-centrosymmetry for the P312 phase and centrosymmetry for the P-31m phase.According to our results,two structural phases are found to be stable thermally and dynamically.The P312 phase of AsP_(2)X_(6)(X=S,Se)are indirect semiconductors with band gaps of 2.44 eV(AsP2S6)and 2.18 eV(AsP2Se6)at the HSE06 level,and their absorption coefficients are predicted to reach the order of 10^(5)cm^(-1)from visible light to ultraviolet region,but the main absorption is manly in the ultraviolet region.The P-31m phase of AsP_(2)X_(6)(X=S,Se)exhibits metal character with the Fermi surface mainly occupied by the p orbital of S/Se.Remarkably,estimated by first principles calculations,the P-31m AsP2S6 is found to be an intrinsic phonon-mediated superconductor with a relatively high critical superconducting temperature of about 13.4 K,and the P-31m AsP2Se6 only has a superconducting temperature of 1.4 K,which suggest that the P-31m AsP2S6 may be a good candidate for a nanoscale superconductor.
基金supported by the Science Center of the National Science Foundation of China(Grant No.52088101)the National Key Research and Development Program of China(Grant Nos.2023YFA1406400,2021YFA1400300,and 2023YFA1607403)the National Natural Science Foundation of China(Grant Nos.T2394472 and T2394470).
文摘The two-dimensional electron gas(2DEG)formed at the interface between two oxide insulators provides new opportunities for electronics and spintronics.The broken inversion symmetry at the heterointerface results in a Rashba spin-orbit coupling(RSOC)effect that enables the conversion between spin and charge currents.However,conducting oxide interfaces that simultaneously exhibit strong RSOC and high carrier mobility-a combination query for achieving high spin-to-charge inter-conversion efficiencies-remain scarce.Herein,we report a correlated 2DEG with giant Rashba splitting and high electron mobility in(111)-oriented EuTiO_(3)/KTaO_(3)(ETO/KTO)heterostructures under light illumination.Upon light modulation,a unique carrier-dependent giant anomalous Hall effect,the signature of spin-polarized 2DEG,emerges with a sign crossover at a carrier density of approximately 5.0×10^(13)cm^(-2),highlighting dramatic changes in the band topology of KTO(111)interface.Furthermore,at 2 K,the carrier mobility is enhanced from 103 cm^(2)·V^(-1)·s^(-1)to 1800 cm^(2)·V^(-1)·s^(-1),a remarkable enhancement of approximately 20 times.Accompanying with a giant Rashba coefficient αR up to 360meV·˚A,this high mobility ferromagnetic 5d oxide 2DEG is predicted to achieve a giant spin-to-charge conversion efficiency ofλ~10 nm,showing great potential for designing low-power spin-orbitronic devices.
文摘Magnetotransport properties of two-dimensional electron gases （2DEG） in AlxGa1-x N/GaN heterostructures with different Al compositions are investigated by magnetotransport measurements at low temperatures and in high magnetic fields. It is found that heterostructures with a lower Al composition in the barrier have lower 2DEG concentration and higher 2DEG mobility.
基金supported by NSFC (Grants No. 11834013 and 12174383)support from the Youth Innovation Promotion Association, Chinese Academy of Sciences (No. 2021110)。
文摘The electron mobility anisotropy in (Al,Ga)Sb/InAs two-dimensional electron gases with different surface morphology has been investigated.Large electron mobility anisotropy is found for the sample with anisotropic morphology,which is mainly induced by the threading dislocations in the InAs layer.For the samples with isotropic morphology,the electron mobility is also anisotropic and could be attributed to the piezoelectric scattering.At low temperature (below transition temperature),the piezoelectric scattering is enhanced with the increase of temperature,leading to the increase of electron mobility anisotropy.At high temperature (above transition temperature),the phonon scattering becomes dominant.Because the phonon scattering is isotropic,the electron mobility anisotropy in all the samples would be reduced.Our results provide useful information for the comprehensive understanding of electron mobility anisotropy in the (Al,Ga)Sb/InAs system.
基金Project supported by the Foundation for Scientific Instrument and Equipment Development,Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant No.61435012)
文摘The samples of InxGa（1-x）As/In（0.52）Al（0.48）As two-dimensional electron gas（2DEG）are grown by molecular beam epitaxy（MBE）.In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The InxGa1-xAs/In0.52Al0.48As 2DEG channel structures with mobilities as high as 10289 cm^2/V·s（300 K）and42040 cm^2/V·s（77 K）are obtained,and the values of carrier concentration（Nc）are 3.465×10^12/cm^2 and 2.502×10^12/cm^2,respectively.The THz response rates of In P-based high electron mobility transistor（HEMT）structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.
基金Project supported by the National Natural Science Foundation of China(Grant No.61874108)the Gansu Province Natural Science Foundation,China(Grant Nos.18JR3RA285 and 20JR5RA287)the Fundamental Research Funds for the Central Universities,China(Grant Nos.lzujbky-2020-kb06 and lzujbky-2020-cd02)。
文摘Gallium nitride(Ga N)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to particles radiation,which can cause the degradation in electrical performance.We investigate the effect of proton irradiation on the concentration of two-dimensional electron gas(2 DEG)in Ga N-based HEMTs.Coupled Schr¨odinger’s and Poisson’s equations are solved to calculate the band structure and the concentration of 2 DEG by the self-consistency method,in which the vacancies caused by proton irradiation are taken into account.Proton irradiation simulation for Ga N-based HEMT is carried out using the stopping and range of ions in matter(SRIM)simulation software,after which a theoretical model is established to analyze how proton irradiation affects the concentration of 2 DEG.Irradiated by protons with high fluence and low energy,a large number of Ga vacancies appear inside the device.The results indicate that the ionized Ga vacancies in the Ga N cap layer and the Al Ga N layer will affect the Fermi level,while the Ga vacancies in the Ga N layer will trap the two-dimensional electrons in the potential well.Proton irradiation significantly reduced the concentration of 2 DEG by the combined effect of these two mechanisms.
文摘Our recent experimental work on metallic and insulating interfaces controlled by interfacial redox reactions in SrTiO3-based heterostructures is reviewed along with a more general background of two-dimensional electron gas （2DEG） at oxide interfaces. Due to the presence of oxygen vacancies at the SrTiO3 surface, metallic conduction can be created at room temperature in perovskite-type interfaces when the overlayer oxide ABO3 has Al, Ti, Zr, or Hf elements at the B sites. Furthermore, relying on interface-stabilized oxygen vacancies, we have created a new type of 2DEG at the heterointerface between SrTiO3 and a spinel γ-Al2O3 epitaxial film with compatible oxygen ion sublattices. This 2DEG exhibits an electron mobility exceeding 100000 cm2·V-1·s-1, more than one order of magnitude higher than those of hitherto investigated perovskite-type interfaces. Our findings pave the way for the design of high-mobility all-oxide electronic devices and open a route toward the studies of mesoscopic physics with complex oxides.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61377020,61376089,61223005,and 61176126)the National Science Fund for Distinguished Young Scholars,China(Grant No.60925017)
文摘Models for calculating the sheet densities of two-dimensional electron gas （2DEG） induced by spontaneous and piezoelectric polarization in A1GaN/GaN, A1GaN/A1N/GaN, and GaN/A1GaN/GaN heterostructures are provided. The detailed derivation process of the expression of 2DEG sheet density is given. A longstanding confusion in a very widely cited formula is pointed out and its correct expression is analyzed in detail.
基金supported by the Key Program of the National Natural Science Foundation of China (Grant No 60736033)Xi’an Applied Materials Innovation Fund of China (Grant No XA-AM-200703)the Open Fund of Key Laboratory of Wide Bandgap Semiconductors Material and Devices,Ministry of Education,China
文摘To reveal the internal physics of the low-temperature mobility of two-dimensional electron gas （2DEG） in Al- GaN/GaN heterostructures, we present a theoretical study of the strong dependence of 2DEG mobility on Al content and thickness of AlGaN barrier layer. The theoretical results are compared with one of the highest measured of 2DEG mobility reported for AlGaN/GaN heterostructures. The 2DEG mobility is modelled as a combined effect of the scat- tering mechanisms including acoustic deformation-potential, piezoelectric, ionized background donor, surface donor, dislocation, alloy disorder and interface roughness scattering. The analyses of the individual scattering processes show that the dominant scattering mechanisms are the alloy disorder scattering and the interface roughness scattering at low temperatures. The variation of 2DEG mobility with the barrier layer parameters results mainly from the change of 2DEG density and distribution. It is suggested that in AlGaN/GaN samples with a high Al content or a thick AlGaN layer, the interface roughness scattering may restrict the 2DEG mobility significantly, for the AlGaN/GaN interface roughness increases due to the stress accumulation in AlGaN layer.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60976070)the Excellent Science and Technology Innovation Program from Beijing Jiaotong University,China
文摘The J-V characteristics of AltGa1 tN/GaN high electron mobility transistors（HEMTs） are investigated and simulated using the self-consistent solution of the Schro dinger and Poisson equations for a two-dimensional electron gas（2DEG） in a triangular potential well with the Al mole fraction t = 0.3 as an example.Using a simple analytical model,the electronic drift velocity in a 2DEG channel is obtained.It is found that the current density through the 2DEG channel is on the order of 10^13 A/m^2 within a very narrow region（about 5 nm）.For a current density of 7 × 10^13 A/m62 passing through the 2DEG channel with a 2DEG density of above 1.2 × 10^17 m^-2 under a drain voltage Vds = 1.5 V at room temperature,the barrier thickness Lb should be more than 10 nm and the gate bias must be higher than 2 V.
基金Supported by the National Natural Science Foundation of China under Grant No 51672208the National Science and Technology Pillar Program during the Twelfth Five-Year Plan Period under Grant No 2012BAD47B02+2 种基金the Sci-Tech Research and Development Program of Shaanxi Province under Grant Nos 2010K01-120,2011JM6010 and 2015JM5183the Shaanxi Provincial Department of Education under Grant No 2013JK0927the SRF for ROCS of SEM
文摘Electronic, elastic and piezoelectric properties of two-dimensional （2D） group-IV buckled monolayers （GeSi, SnSi and SnGe） are studied by first principle calculations. According to our calculations, SnSi and SnGe are good 2D piezoelectric materials with large piezoelectric coefficients. The values of d11d11 of SnSi and SnGe are 5.04pm/V and 5.42pm/V, respectively, which are much larger than 2D MoS2 （3.6pm/V） and are comparable with some frequently used bulk materials （e.g., wurtzite AlN 5.1pm/V）. Charge transfer is calculated by the L wdin analysis and we find that the piezoelectric coefficients （d11d11 and d31） are highly dependent on the polarizabilities of the anions and cations in group-IV monolayers.
基金financialy supported by the National Key R@D Program of China (Grants 2016YBF0100100 and 2016YFA0200200)National Natural Science Foundation of China (Grants 51872283, and 21805273)+5 种基金Liaoning Bai Qian Wan Talents Program, Liao Ning Revitalization Talents Program (Grant XLYC1807153)Natural Science Foundation of Liaoning Province, Joint Research Fund Liaoning-Shenyang National Laboratory for Materials Science (Grant 20180510038)DICP (DICP ZZBS201708, DICP ZZBS201802, and DICP I202032)Dalian National Laboratory For Clean Energy(DNL), CAS,DNL Cooperation Fund,CAS (DNL180310, DNL180308, DNL201912, and DNL201915)the Australian Research Council Discovery Program (DP190103290)Australian Research Council Discovery Early Career Researcher Award scheme (DE150101617)
文摘Two-dimensional(2D)boron nitride(BN),the so-called“white graphene,”has demonstrated a great potential in various fields,particularly in electronics and energy,by utilizing its wide bandgap(~5.5 eV),superior thermal stability,high thermal conductance,chemical inertness,and outstanding dielectric properties.However,to further optimize the performances from the view of structure-property relationship,the determinative factors such as crystallite sizes,layer thickness,dispersibility,and surface functionalities should be precisely controlled and adjusted.Therefore,in this review,the synthesis and functionalization methods including“top-down”and“bottom-up”strategies,and non-covalent and covalent modifications for 2D BN are systematically classified and discussed at first,thus catering for the requirements of versatile applications.Then,the progresses of 2D BN applied in the fields of microelectronics such as fieldeffect transistors and dielectric capacitors,energy domains such as thermal energy management and conversion,and batteries and supercapacitors are summarized to highlight the importance of 2D BN.Notably,these contents not only contain the state-of-the-art 2D BN composites,but also bring the current novel design of 2D BN-based microelectronic units.Finally,the challenges and perspectives are proposed to better broaden the scope of this material.Therefore,this review will pave an all-around way for understanding,utilizing,and applying 2D BN in future electronics and energy applications.
基金supported by the Natural Science Foundation of China(No.51902101)Natural Science Foundation of Jiangsu Province(No.BK20201381)+1 种基金Science Foundation of Nanjing University of Posts and Telecommunications(No.NY219144)Postgraduate Research&Practice Innovation Program of Jiangsu Province(No.SJCX22_0254).
文摘Flexible electronics technology is considered as a revolutionary technology to unlock the bottleneck of traditional rigid electronics that prevalent for decades,thereby fueling the next-generation electronics.In the past few decades,the research on flexible electronic devices based on organic materials has witnessed rapid development and substantial achievements,and inorganic semiconductors are also now beginning to shine in the field of flexible electronics.As validated by the latest research,some of the inorganic semiconductors,particularly those at low dimension,unexpectedly exhibited excellent mechanical flexibility on top of superior electrical properties.Herein,we bring together a comprehensive analysis on the recently burgeoning low-dimension inorganic semiconductor materials in flexible electronics,including one-dimensional(1D)inorganic semiconductor nanowires(NWs)and two-dimensional(2D)transition metal dichalcogenides(TMDs).The fundamental electrical properties,optical properties,mechanical properties and strain engineering of materials,and their performance in flexible device applications are discussed in detail.We also propose current challenges and predict future development directions including material synthesis and device fabrication and integration.
