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Two-dimensional Cr_(2)Cl_(3)S_(3) Janus magnetic semiconductor with large magnetic exchange interaction and high-T_(C)
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作者 Lei Fu Shasha Li +3 位作者 Xiangyan Bo Sai Ma Feng Li Yong Pu 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第9期481-485,共5页
The two-dimensional(2D)Janus monolayers are promising in spintronic device application due to their enhanced magnetic couplings and Curie temperatures.Van der Waals CrCl_(3) monolayer has been experimentally proved to... The two-dimensional(2D)Janus monolayers are promising in spintronic device application due to their enhanced magnetic couplings and Curie temperatures.Van der Waals CrCl_(3) monolayer has been experimentally proved to have an in-plane magnetic easy axis and a low Curie temperature of 17 K,which will limit its application in spintronic devices.In this work,we propose a new Janus monolayer Cr_(2)Cl_(3)S_(3) based on the first principles calculations.The phonon dispersion and elastic constants confirm that Janus monolayer Cr_(2)Cl_(3)S_(3) is dynamically and mechanically stable.Our Monte Carlo simulation results based on magnetic exchange constants reveal that Janus monolayer Cr_(2)Cl_(3)S_(3) is an intrinsic ferromagnetic semiconductor with TC of 180 K,which is much higher than that of CrCl_(3) due to the enhanced ferromagnetic coupling caused by S substitution.Moreover,the magnetic easy axis of Janus Cr_(2)Cl_(3)S_(3) can be tuned to the perpendicular direction with a large magnetic anisotropy energy(MAE)of 142eV/Cr.Furthermore,the effect of biaxial strain on the magnetic property of Janus monolayer Cr_(2)Cl_(3)S_(3) is evaluated.It is found that the Curie temperature is more robust under tensile strain.This work indicates that the Janus monolayer Cr_(2)Cl_(3)S_(3) presents increased Curie temperature and out-of-plane magnetic easy axis,suggesting greater application potential in 2D spintronic devices. 展开更多
关键词 first-principles calculations 2d materials magnetic properties ferromagentic semiconductor
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A family of flexible two-dimensional semiconductors:MgMX2Y6(M=Ti/Zr/Hf;X=Si/Ge;Y=S/Se/Te)
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作者 Junhui Yuan Kanhao Xue +1 位作者 Xiangshui Miao Lei Ye 《Journal of Semiconductors》 EI CAS CSCD 2023年第4期70-80,共11页
Inspired by the recently predicted 2D MX_(2)Y_(6)(M=metal element;X=Si/Ge/Sn;Y=S/Se/Te),we explore the possible applications of alkaline earth metal(using magnesium as example)in this family based on the idea of eleme... Inspired by the recently predicted 2D MX_(2)Y_(6)(M=metal element;X=Si/Ge/Sn;Y=S/Se/Te),we explore the possible applications of alkaline earth metal(using magnesium as example)in this family based on the idea of element replacement and valence electron balance.Herein,we report a new family of 2D quaternary compounds,namely MgMX_(2)Y_(6)(M=Ti/Zr/Hf;X=Si/Ge;Y=S/Se/Te)monolayers,with superior kinetic,thermodynamic and mechanical stability.In addition,our results indicate that MgMX_(2)Y_(6)monolayers are all indirect band gap semiconductors with band gap values ranging from 0.870 to 2.500 eV.Moreover,the band edges and optical properties of 2D MgMX_(2)Y_(6)are suitable for constructing multifunctional optoelectronic devices.Furthermore,for comparison,the mechanical,electronic and optical properties of In_(2)X_(2)Y_(6)monolayers have been discussed in detail.The success of introducing Mg into the 2D MX_(2)Y_(6)family indicates that more potential materials,such as Caand Sr-based 2D MX_(2)Y_(6)monolayers,may be discovered in the future.Therefore,this work not only broadens the existing family of 2D semiconductors,but it also provides beneficial results for the future. 展开更多
关键词 two-dimensional materials MgMX_(2)Y_(6)monolayer In2X2Y6 monolayer semiconductor first-principles calculations
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Advancements in two-dimensional Ti_(3)C_(2)MXene interfaced semiconductors for room temperature NO_(2)gas sensing:A review
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作者 Adem Sreedhar Parnapalle Ravi Jin-Seo Noh 《Journal of Materials Science & Technology》 CSCD 2024年第36期237-254,共18页
Nowadays,there is a growing global demand for high-performance room temperature gas sensing de-vices.In this context,we aim to explore the advancements in two-dimensional(2D)Ti_(3)C_(2)MXene role for toxic NO_(2)gas s... Nowadays,there is a growing global demand for high-performance room temperature gas sensing de-vices.In this context,we aim to explore the advancements in two-dimensional(2D)Ti_(3)C_(2)MXene role for toxic NO_(2)gas sensing at room temperature.The distinctive advantages of 2D Ti_(3)C_(2)MXene,including high electrical conductivity,ample surface area,surface termination groups,and layer structure have garnered significant attention towards NO_(2)gas adsorption.Further,the compatible regularity of Ti_(3)C_(2)MXene at the interface of various semiconductors directed the development of potential room-temperature NO_(2)gas sensing devices.Further,the leveraging gas sensing(selectivity,response,and recovery)characteristics be-come increasing attention on Ti_(3)C_(2)MXene/semiconductor interfaces than pure Ti_(3)C_(2)MXene.Elaborative control on the depletion layer through the Schottky barrier formation distinguished the room tempera-ture NO_(2)gas sensing and led to the evolution of electrophilic NO_(2)gas molecule interaction.Remarkably,the great processability of Ti_(3)C_(2)MXene/semiconductor interface is sensitive to the low detection limit(LOD)of NO_(2)gas at parts per billion(ppb)conditions.On the other hand,this review demonstrates the room temperature optoelectronic NO_(2)gas sensing capabilities of Ti_(3)C_(2)-based composites for emphasiz-ing selectivity and recovery.Interestingly,the Ti_(3)C_(2)MXene/semiconductor composite builds immunity against the atmosphere humidity and achieves stable NO_(2)gas sensing.Finally,we have provided conclu-sions and key points to advance the research on room temperature NO_(2)gas sensing of Ti_(3)C_(2)integrated semiconductors. 展开更多
关键词 semiconductorS 2d Ti_(3)C_(2)MXene NO_(2)gas sensing Schottky barrier Room temperature
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Facile fabrication of twisted MoS_(2) bilayers by direct bonding
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作者 Yu-Tong Chen Jie-Ying Liu +6 位作者 Lan-Ying Zhou Hua Yu Tong Li Qing Guan Na Li Yang Chai Guang-Yu Zhang 《Chinese Physics B》 2026年第1期259-264,共6页
When stacking two-dimensional(2D)materials with a lattice mismatch and/or a small twist,moirésuperlattice emerges with fascinating electronic and optical properties.The fabrication of such stacked 2D materials us... When stacking two-dimensional(2D)materials with a lattice mismatch and/or a small twist,moirésuperlattice emerges with fascinating electronic and optical properties.The fabrication of such stacked 2D materials usually requires multiple transfer and stack processes,assisted by a certain transfer medium which needs to be removed afterwards,and it is very challenging to maintain pristine and clean surfaces/interfaces for these stacked structures.In this work,we report a facile direct bonding method for fabrication of twisted MoS_(2) bilayers with ultra-clean surfaces/interfaces.Novel interlayer interactions are revealed in the as-fabricated high-quality samples,leading to twist-angle related dispersion behavior of various Raman modes,such as layer breathing modes,shear modes and E_(2g)modes,as well as indirect bandgap excitons.Field-effect transistors(FETs)of twisted MoS_(2) bilayers also exhibit angle-dependent performance,which could be attributed to the band structure evolution.This facile method holds significance for the future integration of pre-designed multilayer 2D materials and paves a way to explore underlying physical mechanisms and potential applications. 展开更多
关键词 two-dimensional(2d)materials direct bonding moirésuperlattice twistronics
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Mixed cation ordering scaffold polar 2D halide perovskite semiconductor for self-powered polarization-sensitive photodetection
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作者 Qianxi Wang Xiaoqi Li +6 位作者 Fen Zhang Qingyin Wei Zengshan Yue Xiantan Lin Yicong Lv Xitao Liu Junhua Luo 《Chinese Chemical Letters》 2025年第10期637-640,共4页
Polar semiconductors,particularly the emerging polar two-dimensional(2D)halide perovskites,have motivated immense interest in diverse photoelectronic devices due to their distinguishing polarizationgenerated photoelec... Polar semiconductors,particularly the emerging polar two-dimensional(2D)halide perovskites,have motivated immense interest in diverse photoelectronic devices due to their distinguishing polarizationgenerated photoelectric effects.However,the constraints on the organic cation's choice are still subject to limitations of polar 2D halide perovskites due to the size of the inorganic pocket between adjacent corner-sharing octahedra.Herein,a mixed spacer cation ordering strategy is employed to assemble a polar 2D halide perovskite NMAMAPb Br_(4)(NMPB,NMA is N-methylbenzene ammonium,MA is methylammonium)with alternating cation in the interlayer space.Driven by the incorporation of a second MA cation,the perovskite layer transformed from a 2D Pb_(7)Br_(24)anionic network with corner-and face-sharing octahedra to a flat 2D PbBr_(4)perovskite networks only with corner-sharing octahedra.In the crystal structure of NMPB,the asymmetric hydrogen-bonding interactions between ordered mixed-spacer cations and 2D perovskite layers give rise to a second harmonic generation response and a large polarization of 1.3μC/cm^(2).More intriguingly,the ordered 2D perovskite networks endow NMPB with excellent self-powered polarization-sensitive detection performance,showing a considerable polarization-related dichroism ratio up to 1.87.The reconstruction of an inorganic framework within a crystal through mixed cation ordering offers a new synthetic tool for templating perovskite lattices with controlled properties,overcoming limitations of conventional cation choice. 展开更多
关键词 Polar semiconductor 2d halide perovskite Mixed cation ordering Self-powered polarization sensitive photodetection ACI-type Bulk photovoltaic effect
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Thermal transport in semiconductor nanostructures, graphene,and related two-dimensional materials 被引量:2
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作者 Alexandr I.Cocemasov Calina I.Isacova Denis L.Nika 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第5期74-82,共9页
We review experimental and theoretical results on thermal transport in semiconductor nanostructures(multilayer thin films, core/shell and segmented nanowires), single-and few-layer graphene, hexagonal boron nitride,... We review experimental and theoretical results on thermal transport in semiconductor nanostructures(multilayer thin films, core/shell and segmented nanowires), single-and few-layer graphene, hexagonal boron nitride, molybdenum disulfide, and black phosphorus. Different possibilities of phonon engineering for optimization of electrical and heat conductions are discussed. The role of the phonon energy spectra modification on the thermal conductivity in semiconductor nanostructures is revealed. The dependence of thermal conductivity in graphene and related two-dimensional(2 D) materials on temperature, flake size, defect concentration, edge roughness, and strain is analyzed. 展开更多
关键词 PHONONS thermal conductivity NANOWIRE GRAPHENE two-dimensional 2d materials
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Top gate engineering of field-effect transistors based on wafer-scale two-dimensional semiconductors 被引量:1
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作者 Jingyi Ma Xinyu Chen +15 位作者 Yaochen Sheng Ling Tong Xiaojiao Guo Minxing Zhang Chen Luo Lingyi Zong Yin Xia Chuming Sheng Yin Wang Saifei Gou Xinyu Wang Xing Wu Peng Zhou David Wei Zhang Chenjian Wu Wenzhong Bao 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第11期243-248,共6页
The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous... The investigation of two-dimensional(2D)materials has advanced into practical device applications,such as cascaded logic stages.However,incompatible electrical properties and inappropriate logic levels remain enormous challenges.In this work,a doping-free strategy is investigated by top gated(TG)MoS_(2) field-effect transistors(FETs)using various metal gates(Au,Cu,Ag,and Al).These metals with different work functions provide a convenient tuning knob for controlling threshold voltage(V_(th))for MoS_(2) FETs.For instance,the Al electrode can create an extra electron doping(n-doping)behavior in the MoS_(2) TG-FETs due to a dipole effect at the gate-dielectric interface.In this work,by achieving matched electrical properties for the load transistor and the driver transistor in an inverter circuit,we successfully demonstrate wafer-scale MoS_(2) inverter arrays with an optimized inverter switching threshold voltage(V_(M))of 1.5 V and a DC voltage gain of 27 at a supply voltage(V_(DD))of 3 V.This work offers a novel scheme for the fabrication of fully integrated multistage logic circuits based on wafer-scale MoS_(2) film. 展开更多
关键词 two-dimensional semiconductor MoS_(2) Top gate Field effect transistor Logic inverter
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Band gap engineering of atomically thin two-dimensional semiconductors 被引量:1
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作者 葛翠环 李洪来 +1 位作者 朱小莉 潘安练 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第3期48-58,共11页
Atomically thin two-dimensional (2D) layered materials have potential applications in nanoelectronics, nanophoton- ics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for... Atomically thin two-dimensional (2D) layered materials have potential applications in nanoelectronics, nanophoton- ics, and integrated optoelectronics. Band gap engineering of these 2D semiconductors is critical for their broad applications in high-performance integrated devices, such as broad-band photodetectors, multi-color light emitting diodes (LEDs), and high-efficiency photovoltaic devices. In this review, we will summarize the recent progress on the controlled growth of composition modulated atomically thin 2D semiconductor alloys with band gaps tuned in a wide range, as well as their induced applications in broadly tunable optoelectronic components. The band gap engineered 2D semiconductors could open up an exciting opportunity for probing their fundamental physical properties in 2D systems and may find diverse applications in functional electronic/optoelectronic devices. 展开更多
关键词 2d semiconductors band gap engineering ALLOYS atomically thin
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Deformed two-dimensional rogue waves in the (2+1)-dimensional Korteweg–de Vries equation
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作者 Yulei Cao Peng-Yan Hu +1 位作者 Yi Cheng Jingsong He 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第3期205-214,共10页
Within the(2+1)-dimensional Korteweg–de Vries equation framework,new bilinear B¨acklund transformation and Lax pair are presented based on the binary Bell polynomials and gauge transformation.By introducing an a... Within the(2+1)-dimensional Korteweg–de Vries equation framework,new bilinear B¨acklund transformation and Lax pair are presented based on the binary Bell polynomials and gauge transformation.By introducing an arbitrary functionφ(y),a family of deformed soliton and deformed breather solutions are presented with the improved Hirota’s bilinear method.By choosing the appropriate parameters,their interesting dynamic behaviors are shown in three-dimensional plots.Furthermore,novel rational solutions are generated by taking the limit of the obtained solitons.Additionally,twodimensional(2D)rogue waves(localized in both space and time)on the soliton plane are presented,we refer to them as deformed 2D rogue waves.The obtained deformed 2D rogue waves can be viewed as a 2D analog of the Peregrine soliton on soliton plane,and its evolution process is analyzed in detail.The deformed 2D rogue wave solutions are constructed successfully,which are closely related to the arbitrary functionφ(y).This new idea is also applicable to other nonlinear systems. 展开更多
关键词 two-dimensional(2d)Korteweg-de Vries(KdV)equation Bilinear method Backlund transformation Lax pair deformed 2d rogue wave
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Origin of itinerant ferromagnetism in two-dimensional Fe_(3)GeTe_(2)
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作者 Xi Chen Zheng-Zhe Lin Li-Rong Cheng 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第4期119-124,共6页
Magnetic order in two-dimensional systems was not supposed to exist at finite temperature.In recent years,the successful preparation of two-dimensional ferromagnetic materials such as CrI_(3),Cr_(2) Ge_(2) Te_(6),and ... Magnetic order in two-dimensional systems was not supposed to exist at finite temperature.In recent years,the successful preparation of two-dimensional ferromagnetic materials such as CrI_(3),Cr_(2) Ge_(2) Te_(6),and Fe_(3)GeTe_(2) opens up a new chapter in the remarkable field of two-dimensional materials.Here,we report on a theoretical analysis of the stability of ferromagnetism in Fe_(3)GeTe_(2).We uncover the mechanism of holding long-range magnetic order and propose a model to estimate the Curie temperature of Fe_(3)GeTe_(2).Our results reveal the essential role of magnetic anisotropy in maintaining the magnetic order of two-dimensional systems.The theoretical method used here can be generalized to future research of other magnetic two-dimensional systems. 展开更多
关键词 two-dimensional(2d)ferromagnetism spin wave magnetic anisotropy
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Two-dimensional hexagonal Zn3Si2 monolayer:Dirac cone material and Dirac half-metallic manipulation
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作者 Yurou Guan Lingling Song +4 位作者 Hui Zhao Renjun Du Liming Liu Cuixia Yan Jinming Cai 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第8期418-423,共6页
The fascinating Dirac cone in honeycomb graphene,which underlies many unique electronic properties,has inspired the vast endeavors on pursuing new two-dimensional(2D)Dirac materials.Based on the density functional the... The fascinating Dirac cone in honeycomb graphene,which underlies many unique electronic properties,has inspired the vast endeavors on pursuing new two-dimensional(2D)Dirac materials.Based on the density functional theory method,a 2D material Zn3Si2 of honeycomb transition-metal silicide with intrinsic Dirac cones has been predicted.The Zn3Si2 monolayer is dynamically and thermodynamically stable under ambient conditions.Importantly,the Zn3Si2 monolayer is a room-temperature 2D Dirac material with a spin-orbit coupling energy gap of 1.2 meV,which has an intrinsic Dirac cone arising from the special hexagonal lattice structure.Hole doping leads to the spin polarization of the electron,which results in a Dirac half-metal feature with single-spin Dirac fermion.This novel stable 2D transition-metal-silicon-framework material holds promises for electronic device applications in spintronics. 展开更多
关键词 two-dimensional(2d)dirac cone material dirac half-metal first-principles calculation spin-orbit coupling
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Magnetic and electronic properties of bulk and two-dimensional FeBi_(2)Te_(4):A first-principles study
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作者 王倩倩 赵建洲 +4 位作者 吴维康 周胤宁 Qile Li Mark T.Edmonds 杨声远 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第8期450-456,共7页
Layered magnetic materials,such as MnBi_(2)Te_(4),have drawn much attention owing to their potential for realizing twodimensional(2D)magnetism and possible topological states.Recently,FeBi_(2)Te_(4),which is isostruct... Layered magnetic materials,such as MnBi_(2)Te_(4),have drawn much attention owing to their potential for realizing twodimensional(2D)magnetism and possible topological states.Recently,FeBi_(2)Te_(4),which is isostructural to MnBi_(2)Te_(4),has been synthesized in experiments,but its detailed magnetic ordering and band topology have not been clearly understood yet.Here,based on first-principles calculations,we investigate the magnetic and electronic properties of FeBi_(2)Te_(4)in bulk and 2D forms.We show that different from MnBi_(2)Te_(4),the magnetic ground states of bulk,single-layer,and bilayer FeBi_(2)Te_(4)all favor a 120°noncollinear antiferromagnetic ordering,and they are topologically trivial narrow-gap semiconductors.For the bilayer case,we find that a quantum anomalous Hall effect with a unit Chern number is realized in the ferromagnetic state,which may be achieved in experiment by an external magnetic field or by magnetic proximity coupling.Our work clarifies the physical properties of the new material system of FeBi_(2)Te_(4)and reveals it as a potential platform for studying magnetic frustration down to 2D limit as well as quantum anomalous Hall effect. 展开更多
关键词 FeBi_(2)Te_(4) two-dimensional(2d)magnetism noncollinear antiferromagnet quantum anomalous Hall effect first-principles calculation
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Nonlocal vibration and buckling of two-dimensional layered quasicrystal nanoplates embedded in an elastic medium 被引量:6
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作者 Tuoya SUN Junhong GUO E.PAN 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI CSCD 2021年第8期1077-1094,共18页
A mathematical model for nonlocal vibration and buckling of embedded two-dimensional(2 D) decagonal quasicrystal(QC) layered nanoplates is proposed. The Pasternak-type foundation is used to simulate the interaction be... A mathematical model for nonlocal vibration and buckling of embedded two-dimensional(2 D) decagonal quasicrystal(QC) layered nanoplates is proposed. The Pasternak-type foundation is used to simulate the interaction between the nanoplates and the elastic medium. The exact solutions of the nonlocal vibration frequency and buckling critical load of the 2 D decagonal QC layered nanoplates are obtained by solving the eigensystem and using the propagator matrix method. The present three-dimensional(3 D) exact solution can predict correctly the nature frequencies and critical loads of the nanoplates as compared with previous thin-plate and medium-thick-plate theories.Numerical examples are provided to display the effects of the quasiperiodic direction,length-to-width ratio, thickness of the nanoplates, nonlocal parameter, stacking sequence,and medium elasticity on the vibration frequency and critical buckling load of the 2 D decagonal QC nanoplates. The results show that the effects of the quasiperiodic direction on the vibration frequency and critical buckling load depend on the length-to-width ratio of the nanoplates. The thickness of the nanoplate and the elasticity of the surrounding medium can be adjusted for optimal frequency and critical buckling load of the nanoplate.This feature is useful since the frequency and critical buckling load of the 2 D decagonal QCs as coating materials of plate structures can now be tuned as one desire. 展开更多
关键词 two-dimensional(2d)quasicrystal(QC) NANOPLATE VIBRATION BUCKLING elastic medium exact solution
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Recent Advances in Strain-Induced Piezoelectric and Piezoresistive Effect-Engineered 2D Semiconductors for Adaptive Electronics and Optoelectronics 被引量:5
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作者 Feng Li Tao Shen +3 位作者 Cong Wang Yupeng Zhang Junjie Qi Han Zhang 《Nano-Micro Letters》 SCIE EI CAS CSCD 2020年第8期236-279,共44页
The development of two-dimensional(2D)semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness,unique structure,excellent optoelectronic properties ... The development of two-dimensional(2D)semiconductors has attracted widespread attentions in the scientific community and industry due to their ultra-thin thickness,unique structure,excellent optoelectronic properties and novel physics.The excellent flexibility and outstanding mechanical strength of 2D semiconductors provide opportunities for fabricated strain-sensitive devices and utilized strain tuning their electronic and optic–electric performance.The strain-engineered one-dimensional materials have been well investigated,while there is a long way to go for 2D semiconductors.In this review,starting with the fundamental theories of piezoelectric and piezoresistive effect resulted by strain,following we reviewed the recent simulation works of strain engineering in novel 2D semiconductors,such as Janus 2D and 2D-Xene structures.Moreover,recent advances in experimental observation of strain tuning PL spectra and transport behavior of 2D semiconductors are summarized.Furthermore,the applications of strain-engineered 2D semiconductors in sensors,photodetectors and nanogenerators are also highlighted.At last,we in-depth discussed future research directions of strain-engineered 2D semiconductor and related electronics and optoelectronics device applications. 展开更多
关键词 2d semiconductors STRAIN Piezoelectric effect Piezoresistive effect Electronic and optoelectronics
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2D organic semiconductors, the future of green nanotechnology 被引量:4
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作者 Guru Prakash Neupane Wendi Ma +3 位作者 Tanju Yildirim Yilin Tang Linglong Zhang Yuerui Lu 《Nano Materials Science》 CAS 2019年第4期246-259,共14页
The discovery of 2D organic semiconductors of atomically thin structures has attracted great attention due to their emerging optical, electronic, optoelectronic and mechatronic properties. Recent progress in such orga... The discovery of 2D organic semiconductors of atomically thin structures has attracted great attention due to their emerging optical, electronic, optoelectronic and mechatronic properties. Recent progress in such organic nanostructures has opened new opportunities for engineering material properties in many ways, such as, 0D/1D/2D nanoparticles hybridization, strain engineering, atomic doping etc. Moreover, 2D organic nanostructures exhibit a unique feature of bio–functionality and are highly sensitive to bio-analytes. Such peculiar behavior in 2D organics can be utilized to design highly-efficient bio-sensors. Also, a bio-molecular integrated electronic/optoelectronic device with enhanced performance can be attained. Furthermore, the bio-degradable, biocompatible, biometabolizable, non-toxic behaviour and natural origin of organic nanomaterials can address the current ecological concerns of increasing inorganic material based electronic waste. This review highlights the benefits of 2D organic semiconductors. Considering the importance of strategic techniques for growing thin 2D organic layers,this review summarizes progress towards this direction. The possible challenges for long-time stability and future research directions in 2D organic nano electronics/optoelectronics are also discussed. We believe that this review article provides immense research interests in organic 2D nanotechnology for exploiting green technologies in the future. 展开更多
关键词 2d organic semiconductor Green nanotechnology OTFTs OLEdS Photo-diodes Organic solar cell Optical wave guide
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A novel approach to visual image encryption:2D hyperchaos,variable Josephus,and 3D diffusion 被引量:1
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作者 Yan Hong Xinyan Duan +2 位作者 Jingming Su Zhaopan Wang Shihui Fang 《Chinese Physics B》 2025年第4期335-352,共18页
With the development of the Internet,image encryption technology has become critical for network security.Traditional methods often suffer from issues such as insufficient chaos,low randomness in key generation,and po... With the development of the Internet,image encryption technology has become critical for network security.Traditional methods often suffer from issues such as insufficient chaos,low randomness in key generation,and poor encryption efficiency.To enhance performance,this paper proposes a new encryption algorithm designed to optimize parallel processing and adapt to images of varying sizes and colors.The method begins by using SHA-384 to extract the hash value of the plaintext image,which is then processed to determine the chaotic system’s initial value and block size.The image is padded and divided into blocks for further processing.A novel two-dimensional infinite collapses hyperchaotic map(2DICHM)is employed to generate the intra-block scrambling sequence,while an improved variable Joseph traversal sequence is used for inter-block scrambling.After removing the padding,3D forward and backward shift diffusions,controlled by the 2D-ICHM sequences,are applied to the scrambled image,producing the ciphertext.Simulation results demonstrate that the proposed algorithm outperforms others in terms of entropy,anti-noise resilience,correlation coefficient,robustness,and encryption efficiency. 展开更多
关键词 SHA-384 two-dimensional infinite collapses hyperchaotic map(2d-ICHM) variable Joseph traversal 3d forward shift diffusion
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Field-effect transistors based on two-dimensional materials for logic applications 被引量:2
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作者 王欣然 施毅 张荣 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第9期147-161,共15页
Field-effect transistors (FETs) for logic applications, graphene and MoS2, are discussed. These materials have based on two representative two-dimensional (2D) materials, drastically different properties and requi... Field-effect transistors (FETs) for logic applications, graphene and MoS2, are discussed. These materials have based on two representative two-dimensional (2D) materials, drastically different properties and require different consider- ations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS2 is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors. 展开更多
关键词 graphene MOS2 two-dimensional 2d materials field-effect transistors
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Room temperature synthesis of two-dimensional multi layer magnets based onα-Co^(Ⅱ)layered hydroxides 被引量:3
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作者 Victor Oestreicher Christian Dolle +2 位作者 Diego Hunt Michael Fickert Gonzalo Abellan 《Nano Materials Science》 EI CAS CSCD 2022年第1期36-43,共8页
Research on two-dimensional(2D)materials is one of the most active fields in materials science and nanotechnology.Among the members of the 2D family,layered hydroxides(LHs)represent an exceptional case of study due to... Research on two-dimensional(2D)materials is one of the most active fields in materials science and nanotechnology.Among the members of the 2D family,layered hydroxides(LHs)represent an exceptional case of study due to their unparalleled chemical versatility which allows the modulation of their physicochemical properties at will.Nowadays,LHs based on earth-abundant metals are key materials in the areas of energy storage and conversion,hybrid materials or magnetism.α-Co hydroxides(Simonkolleite-like structures)are promising phases with tuneable electronic and magnetic properties by ligand modification.However,even in the simple case ofα-Co^(Ⅱ)hydroxychlorides,the preparation of well-defined large 2D crystals is not straightforward,hindering the development of fundamental studies.Herein,we present the synthesis of 2D hexagonal crystals with outstanding sizethickness relationship(diameter>5μm and thickness of 20±7 nm)by a simple homogeneous synthesis taking place at room temperature.In structural terms,no differences are observed between our layered materials and those obtained hydrothermally.However,dynamic susceptibility measurements alert about different arrangements of the magnetic sublattices,which have been rationalized with structural DFT calculations.This work provides an extremely easy bottom-up method to obtain high-quality 2D crystals based onα-CoIIhydroxides,paving the way for the development of fundamental studies and applications. 展开更多
关键词 two-dimensional(2d)materials Layered hydroxides Hexagonal morphology Bottom-up synthesis MAGNETISM
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Synthetic Two-dimensional Organic Structures 被引量:2
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作者 Hui Liu Xiao-Nan Kan +3 位作者 Chen-Yu Wu Qing-Yan Pan Zhi-Bo Li Ying-Jie Zhao 《Chinese Journal of Polymer Science》 SCIE CAS CSCD 2018年第4期425-425,426-444,共20页
Synthetic two-dimensional(2 D) polymers have totally different topology structures compared with traditional linear or branched polymers. The peculiar 2 D structures bring superior properties. Although, from linear ... Synthetic two-dimensional(2 D) polymers have totally different topology structures compared with traditional linear or branched polymers. The peculiar 2 D structures bring superior properties. Although, from linear to 2 D polymers, the study of these new materials is still in its infancy, they already show potential applications especially in optoelectronics, membranes, energy storage and catalysis, etc. In this review, we summarize the recent progress of the 2 D materials from three respects:(1) Chemistry—different types of polymerization reactions or supramolecular assembly to construct the 2 D networks were described;(2) Preparation methods—surface science, crystal engineering approaches and solution synthesis were introduced;(3) Functionalization and some early applications. 展开更多
关键词 two-dimensional structures Interracial synthesis 2d crystal Covalent organic frameworks (COFs) Supramolecular assembly
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Phase engineering two-dimensional nanostructures for electrocatalytic hydrogen evolution reaction 被引量:2
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作者 Zhongshui Li Yang Yue +1 位作者 Junchen Peng Zhimin Luo 《Chinese Chemical Letters》 SCIE CAS CSCD 2023年第1期91-101,共11页
Hydrogen(H2)is considered to be a promising substitute for fossil fuels.Two-dimensional(2D)nanomaterials have exhibited an efficient electrocatalytic capacity to catalyze hydrogen evolution reaction(HER).Particularly,... Hydrogen(H2)is considered to be a promising substitute for fossil fuels.Two-dimensional(2D)nanomaterials have exhibited an efficient electrocatalytic capacity to catalyze hydrogen evolution reaction(HER).Particularly,phase engineering of 2D nanomaterials is opening a novel research direction to endow 2D nanostructures with fascinating properties for deep applications in catalyzing HER.In this review,we briefly summarize the research progress and present the current challenges on phase engineering of 2D nanomaterials for their applications in electrocatalytic HER.Our summary will be of significance to provide fundamental understanding for designing novel 2D nanomaterials with unconventional phases to electrochemically catalyze HER. 展开更多
关键词 two-dimensional nanomaterials Phase engineering Hydrogen evolution reaction Electrocatalysis Transition metal dichalcogenides Metal thiophosphates 2d noble metal nanomaterials
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