This paper uses the relation of the cosmic scale factor and scalar field to solve Wheeler-De Witt equation,gives the tunnel effect of the cosmic scale factor a and quantum potential well of scalar field, and makes it ...This paper uses the relation of the cosmic scale factor and scalar field to solve Wheeler-De Witt equation,gives the tunnel effect of the cosmic scale factor a and quantum potential well of scalar field, and makes it fit with the physics of cosmic quantum birth. By solving Wheeler-De Witt equation we achieve a general probability distribution of the cosmic birth, and give the analysis of cosmic quantum birth.展开更多
To explore tunnel effects on ring road traffic flow,a macroscopic urgent-gentle class traffic model is put forward.The model identifies vehicles with urgent and gentle classes,chooses the tunnel speed limit as free fl...To explore tunnel effects on ring road traffic flow,a macroscopic urgent-gentle class traffic model is put forward.The model identifies vehicles with urgent and gentle classes,chooses the tunnel speed limit as free flow speed to express the fundamental diagram in the tunnel,and adopts algebraic expressions to describe traffic pressure and sound speed.With two speed trajectories at the Kobotoke tunnel in Japan,the model is validated,with good agreement with observed data.Numerical results indicate that in the case of having no ramp effects,tunnel mean travel time is almost constant dependent on tunnel length.When initial density normalized by jam density is above a threshold of about 0.21,a traffic shock wave originates at the tunnel entrance and propagates backward.Such a threshold drops slightly as a result of on-ramp merging effect,the mean travel time drops as off-ramp diversion effect intensifies gradually.These findings deepen the understanding of tunnel effects on traffic flow in reality.展开更多
Entanglement and the tunnel effect phenomena have been repeatedly observed and are generically accepted under orthodox quantum mechanics formalism. However, they remain rather inexplicable in the context of spacetime ...Entanglement and the tunnel effect phenomena have been repeatedly observed and are generically accepted under orthodox quantum mechanics formalism. However, they remain rather inexplicable in the context of spacetime usual conceptualization. In the present work, we suggest an alternative quantum mechanics formalism, refining the pilot-wave theory initially proposed by de Broglie. We suggest that spacetime is an emergent phenomenon from a prior subquantum medium and that entanglement and the tunnel effect can be explained in terms of a nonlinear relation between space and time that is imposed by subquantum waves.展开更多
In this paper, we extend Parikh＇ recent work to the Vaidya-de Sitter black hole which is non-stationary. We view Hawking radiation as a tunnelling process across the event horizon and calculate the tunnelling probabi...In this paper, we extend Parikh＇ recent work to the Vaidya-de Sitter black hole which is non-stationary. We view Hawking radiation as a tunnelling process across the event horizon and calculate the tunnelling probability when the particle crosses the event horizon. From the tunnelling probability we also find a leading correction to the semiclassical emission rate.展开更多
The quantum tunneling effect （QTE） in a cavity-resonator-coupled （CRC） array was analytically and numerically investigated. The underlying mechanism was interpreted by treating electromagnetic waves as photons, an...The quantum tunneling effect （QTE） in a cavity-resonator-coupled （CRC） array was analytically and numerically investigated. The underlying mechanism was interpreted by treating electromagnetic waves as photons, and then was generalized to acoustic waves and matter waves. It is indicated that for the three kinds of waves, the QTE can be excited by cavity resonance in a CRC array, resulting in sub-wavelength transparency through the narrow splits between cavities. This opens up opportunities for designing new types of crystals based on CRC arrays, which may find potential applications such as quantum devices, micro-optic transmission, and acoustic manipulation.展开更多
The tunneling effect of Bose-Einstein condensate （BEC） in a harmonic trap with a Gaussian energy barrier is studied in this paper. The initial condensate evolves into two separate moving condensates after the tunnel...The tunneling effect of Bose-Einstein condensate （BEC） in a harmonic trap with a Gaussian energy barrier is studied in this paper. The initial condensate evolves into two separate moving condensates after the tunneling time under certain conditions. The interference pattern between the two moving condensates is given as a comparison and as a further demonstration of the existence of the global phase.展开更多
Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold perf...Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.展开更多
Model test studies based on the similarity theory were conducted to investigate vibration effect and damage evolution characteristics of tunnel surrounding rock under push-type cyclic blasting excavation.The model was...Model test studies based on the similarity theory were conducted to investigate vibration effect and damage evolution characteristics of tunnel surrounding rock under push-type cyclic blasting excavation.The model was constructed with a ratio of 1∶15.By simulating the tunnel excavation of push-type cyclic blasting,the influence of the blasting parameter change on vibration effect was explored.The damage degree of tunnel surrounding rock was evaluated by the change of the acoustic wave velocity at the same measuring point after blasting.The relationship between the damage evolution of surrounding rock and blasting times was established.The research results show that：（1）In the same geological environment,the number of delay initiation is larger,the main vibration frequency of blasting seismic wave is higher,and the attenuation of high frequency signal in the rock and soil is faster.The influence of number of delay initiation on blasting vibration effect cannot be ignored;（2）Under push-type cyclic blasting excavation,there were great differences in the decreasing rates of acoustic wave velocity of the measuring points which have the same distance to the blasting region at the same depth,and the blasting damage ranges of surrounding rock were typically anisotropic at both depth and breadth;（3）When blasting parameters were basically kept as the same,the growth trend of the cumulative acoustic wave velocity decreasing rate at the measuring point was nonlinear under different cycle blasting excavations;（4）There were nonlinear evolution characteristics between the blasting cumulative damage（D）of surrounding rock and blasting times（n）under push-type cyclic blasting loading,and different measuring points had corresponding blasting cumulative damage propagation models,respectively.The closer the measuring point was away from the explosion source,the faster the cumulative damage extension.Blasting cumulative damage effect of surrounding rock had typically nonlinear evolution properties and anisotropic characteristics.展开更多
A new 'twice loose shoe' method in the Wheeler–DeWitt equation of the universe wavefunction on the cosmic scale factor and a scalar field is suggested. We analyze both the affections coming from the tunnell...A new 'twice loose shoe' method in the Wheeler–DeWitt equation of the universe wavefunction on the cosmic scale factor and a scalar field is suggested. We analyze both the affections coming from the tunnelling effect of and the potential well effect of , and obtain the initial values and about a primary closed universe which is born with the largest probability in the quantum manner. Our result is able to overcome the 'large field difficulty' of the universe quantum creation probability with only tunnelling effect. This new born universe has to suffer a startup of inflation, and then comes into the usual slow rolling inflation. The universe with the largest probability maybe has a 'gentle' inflation or an eternal chaotic inflation, this depends on a new parameter which describes the tunnelling character.展开更多
An analytical model of gate-all-around （GAA） silicon nanowire tunneling field effect transistors （NW-TFETs） is developted based on the surface potential solutions in the channel direction and considering the band ...An analytical model of gate-all-around （GAA） silicon nanowire tunneling field effect transistors （NW-TFETs） is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling （BTBT） efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane＇s expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.展开更多
In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional...In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional core gate, the novel device achieves a steeper subthreshold slope, less susceptibility to the short channel effect, higher on-state current, and larger on/off current ratio than the traditional gate-all-around tunneling field-effect transistor. The excellent performance makes the proposed structure more attractive to further dimension scaling.展开更多
The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like...The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like equation and Schrodinger’s equation. To calculate the electron transmittance, a numerical approach-namely the transfer matrix method(TMM)-was employed and the Launder formula was used to compute the tunneling current. The results suggest that the tunneling currents that were calculated using both equations have similar characteristics for the same parameters, even though they have different values. The tunneling currents that were calculated by applying the Dirac-like equation were lower than those calculated using Schrodinger’s equation.展开更多
A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in w...A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.展开更多
Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transi...Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.展开更多
The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characte...The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characteristics of its 2D atomic layers,are the main focus of this research work.The impact of channel thickness,gate under-lap,asymmetric source/drain doping method,workfunction of gate contact,and High-K material on Graphene-based Tunnel Field Effect Transistor(TFET)is analyzed with 20 nm technology.Physical modelling and electrical characteristic performance have been simulated using the Atlas device simulator of SILVACO TCAD with user-defined material syntax for the newly included graphene material in comparison to silicon carbide(SiC).The simulation results in significant suppression of ambipolar current to voltage characteristics of TFET and modelled device exhibits a significant improvement in subthreshold swing(0.0159 V/decade),the ratio of Ion/Ioff(1000),and threshold voltage(-0.2 V with highly doped p-type source and 0.2 V with highly doped n-type drain)with power supply of 0.5 V,which make it useful for low power digital applications.展开更多
A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics ...A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.展开更多
Tunneling field effect transistors（TFETs） based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low...Tunneling field effect transistors（TFETs） based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here,we investigate the TFETs based on two different integration types： in-plane and vertical heterostructures composed of two kinds of layered phosphorous（β-P and δ-P） by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio（PVR）when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of - 10-6 and a steeper subthreshold swing（SS） of - 23 mV/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of theβ-P and δ-P layers in the in-plane and vertical heterostructures.展开更多
A Ⅲ-Ⅴ heterojunction tunneling field-effect transistor(TFET) can enhance the on-state current effectively,and GaAsSb/InGaAs heterojunction exhibits better performance with the adjustable band alignment by modulating...A Ⅲ-Ⅴ heterojunction tunneling field-effect transistor(TFET) can enhance the on-state current effectively,and GaAsSb/InGaAs heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition.In this paper,the performance of the cylindrical surrounding-gate GaAsSb/InGaAs heterojunction TFET with gate-drain underlap is investigated by numerical simulation.We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing(SS),while increasing source doping concentration and adjusting the composition of GaAsSbInGaAs can improve the on-state current.In addition,the resonant TFET based on GaAsSb/InGaAs is also studied,and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current,respectively,and is much superior to the conventional TFET.展开更多
A Si/Ge heterojunction line tunnel field-effect transistor （LTFET） with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage ...A Si/Ge heterojunction line tunnel field-effect transistor （LTFET） with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage current that is three orders of magnitude lower, and steeper subthreshold characteristics, without degradation in the on-state current. We reveal that these improvements are due to the induced local potential barrier, which arises from the energy-band profile modulation effect. Based on this novel structure, the impacts of the physical parameters of the gap region between the pocket and the drain, including the work-function mismatch between the pocket gate and the gap gate, the type of dopant, and the doping concentration, on the device performance are investigated. Simulation and theoretical calculation results indicate that the gap gate material and n-type doping level in the gap region should be optimized simultaneously to make this region fully depleted for further suppression of the off-state leakage current.展开更多
基金Acknowledgments 0ne of the authors （Y.C. Huang） is grateful to Profs R.G. Cai and D.H. Zhang for useful discussions.
文摘This paper uses the relation of the cosmic scale factor and scalar field to solve Wheeler-De Witt equation,gives the tunnel effect of the cosmic scale factor a and quantum potential well of scalar field, and makes it fit with the physics of cosmic quantum birth. By solving Wheeler-De Witt equation we achieve a general probability distribution of the cosmic birth, and give the analysis of cosmic quantum birth.
基金This work is supported by the National Natural Science Foundation of China(Grant 11972341)the fundamental research project of Lomonosov Moscow State University"Mathematical models for multi-phase media and wave processes in natural,technical and social systems".
文摘To explore tunnel effects on ring road traffic flow,a macroscopic urgent-gentle class traffic model is put forward.The model identifies vehicles with urgent and gentle classes,chooses the tunnel speed limit as free flow speed to express the fundamental diagram in the tunnel,and adopts algebraic expressions to describe traffic pressure and sound speed.With two speed trajectories at the Kobotoke tunnel in Japan,the model is validated,with good agreement with observed data.Numerical results indicate that in the case of having no ramp effects,tunnel mean travel time is almost constant dependent on tunnel length.When initial density normalized by jam density is above a threshold of about 0.21,a traffic shock wave originates at the tunnel entrance and propagates backward.Such a threshold drops slightly as a result of on-ramp merging effect,the mean travel time drops as off-ramp diversion effect intensifies gradually.These findings deepen the understanding of tunnel effects on traffic flow in reality.
文摘Entanglement and the tunnel effect phenomena have been repeatedly observed and are generically accepted under orthodox quantum mechanics formalism. However, they remain rather inexplicable in the context of spacetime usual conceptualization. In the present work, we suggest an alternative quantum mechanics formalism, refining the pilot-wave theory initially proposed by de Broglie. We suggest that spacetime is an emergent phenomenon from a prior subquantum medium and that entanglement and the tunnel effect can be explained in terms of a nonlinear relation between space and time that is imposed by subquantum waves.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10373003, 10475013 and the State Key Development for Basic Research of China （Grant No 2003CB716300）.Acknowledgement We would like to thank Guihua Tian for help.
文摘In this paper, we extend Parikh＇ recent work to the Vaidya-de Sitter black hole which is non-stationary. We view Hawking radiation as a tunnelling process across the event horizon and calculate the tunnelling probability when the particle crosses the event horizon. From the tunnelling probability we also find a leading correction to the semiclassical emission rate.
文摘The quantum tunneling effect （QTE） in a cavity-resonator-coupled （CRC） array was analytically and numerically investigated. The underlying mechanism was interpreted by treating electromagnetic waves as photons, and then was generalized to acoustic waves and matter waves. It is indicated that for the three kinds of waves, the QTE can be excited by cavity resonance in a CRC array, resulting in sub-wavelength transparency through the narrow splits between cavities. This opens up opportunities for designing new types of crystals based on CRC arrays, which may find potential applications such as quantum devices, micro-optic transmission, and acoustic manipulation.
基金Project supported by the National Natural Science Foundation of China (Grant No. 10974068)
文摘The tunneling effect of Bose-Einstein condensate （BEC） in a harmonic trap with a Gaussian energy barrier is studied in this paper. The initial condensate evolves into two separate moving condensates after the tunneling time under certain conditions. The interference pattern between the two moving condensates is given as a comparison and as a further demonstration of the existence of the global phase.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092)
文摘Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.
基金Supported by the National Natural Science Foundation of China(51064009,51464015)the Natural Science Foundation of Guangdong Province of China(2016A030313121)+1 种基金the Higher School Talent Introduction Project of Guangdong Province(A413.0210)the Science and Technology Project of Huizhou City of Guangdong Province of China(2014B020004018)
文摘Model test studies based on the similarity theory were conducted to investigate vibration effect and damage evolution characteristics of tunnel surrounding rock under push-type cyclic blasting excavation.The model was constructed with a ratio of 1∶15.By simulating the tunnel excavation of push-type cyclic blasting,the influence of the blasting parameter change on vibration effect was explored.The damage degree of tunnel surrounding rock was evaluated by the change of the acoustic wave velocity at the same measuring point after blasting.The relationship between the damage evolution of surrounding rock and blasting times was established.The research results show that：（1）In the same geological environment,the number of delay initiation is larger,the main vibration frequency of blasting seismic wave is higher,and the attenuation of high frequency signal in the rock and soil is faster.The influence of number of delay initiation on blasting vibration effect cannot be ignored;（2）Under push-type cyclic blasting excavation,there were great differences in the decreasing rates of acoustic wave velocity of the measuring points which have the same distance to the blasting region at the same depth,and the blasting damage ranges of surrounding rock were typically anisotropic at both depth and breadth;（3）When blasting parameters were basically kept as the same,the growth trend of the cumulative acoustic wave velocity decreasing rate at the measuring point was nonlinear under different cycle blasting excavations;（4）There were nonlinear evolution characteristics between the blasting cumulative damage（D）of surrounding rock and blasting times（n）under push-type cyclic blasting loading,and different measuring points had corresponding blasting cumulative damage propagation models,respectively.The closer the measuring point was away from the explosion source,the faster the cumulative damage extension.Blasting cumulative damage effect of surrounding rock had typically nonlinear evolution properties and anisotropic characteristics.
文摘A new 'twice loose shoe' method in the Wheeler–DeWitt equation of the universe wavefunction on the cosmic scale factor and a scalar field is suggested. We analyze both the affections coming from the tunnelling effect of and the potential well effect of , and obtain the initial values and about a primary closed universe which is born with the largest probability in the quantum manner. Our result is able to overcome the 'large field difficulty' of the universe quantum creation probability with only tunnelling effect. This new born universe has to suffer a startup of inflation, and then comes into the usual slow rolling inflation. The universe with the largest probability maybe has a 'gentle' inflation or an eternal chaotic inflation, this depends on a new parameter which describes the tunnelling character.
基金supported by the National Natural Science Foundation of China(Grant Nos.61274096,61204043,61306042,61306045,and 61306132)the Guangdong Natural Science Foundation,China(Grant Nos.S2012010010533 and S2013040016878)+2 种基金the Shenzhen Science&Technology Foundation,China(Grant No.ZDSY20120618161735041)the Fundamental Research Project of the Shenzhen Science&Technology Foundation,China(Grant Nos.JCYJ20120618162600041,JCYJ20120618162526384,JCYJ20130402164725025,and JCYJ20120618162946025)the International Collaboration Project of the Shenzhen Science&Technology Foundation,China(Grant Nos.GJHZ20120618162120759,GJHZ20130417170946221,GJHZ20130417170908049,and GJHZ20120615142829482)
文摘An analytical model of gate-all-around （GAA） silicon nanowire tunneling field effect transistors （NW-TFETs） is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling （BTBT） efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane＇s expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61176038 and 61474093)the Science and Technology Planning Project of Guangdong Province,China(Grant No.2015A010103002)the Technology Development Program of Shanxi Province,China(Grant No.2016GY075)
文摘In this work, a double-gate-all-around tunneling field-effect transistor is proposed. The performance of the novel device is studied by numerical simulation. The results show that with a thinner body and an additional core gate, the novel device achieves a steeper subthreshold slope, less susceptibility to the short channel effect, higher on-state current, and larger on/off current ratio than the traditional gate-all-around tunneling field-effect transistor. The excellent performance makes the proposed structure more attractive to further dimension scaling.
基金supported by Hibah Penelitian Berbasi Kompetensi 2018 RISTEKDIKTI Republic of Indonesia
文摘The tunneling current in a graphene nanoribbon tunnel field effect transistor(GNR-TFET) has been quantum mechanically modeled. The tunneling current in the GNR-TFET was compared based on calculations of the Dirac-like equation and Schrodinger’s equation. To calculate the electron transmittance, a numerical approach-namely the transfer matrix method(TMM)-was employed and the Launder formula was used to compute the tunneling current. The results suggest that the tunneling currents that were calculated using both equations have similar characteristics for the same parameters, even though they have different values. The tunneling currents that were calculated by applying the Dirac-like equation were lower than those calculated using Schrodinger’s equation.
文摘A dielectric modulation strategy for gate oxide material that enhances the sensing performance of biosensors in junction-less vertical tunnel field effect transistors(TFETs)is reported.The junction-less technique,in which metals with specific work functions are deposited on the source region to modulate the channel conductivity,is used to provide the necessary doping for the proper functioning of the device.TCAD simulation studies of the proposed structure and junction structure have been compared,and showed an enhanced rectification of 10^(4) times.The proposed structure is designed to have a nanocavity of length 10 nm on the left-and right-hand sides of the fixed gate dielectric,which improves the biosensor capture area,and hence the sensitivity.By considering neutral and charged biomolecules with different dielectric constants,TCAD simulation studies were compared for their sensitivities.The off-state current IOFFcan be used as a suitable sensing parameter because it has been observed that the proposed sensor exhibits a significant variation in drain current.Additionally,it has been investigated how positively and negatively charged biomolecules affect the drain current and threshold voltage.To explore the device performance when the nanogaps are fully filled,half filled and unevenly filled,extensive TCAD simulations have been run.The proposed TFET structure is further benchmarked to other structures to show its better sensing capabilities.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 62004119 and 62201332)the Applied Basic Research Plan of Shanxi Province, China (Grant Nos. 20210302124647 and 20210302124028)。
文摘Nanowires with gate-all-around(GAA) structures are widely considered as the most promising candidate for 3-nm technology with the best ability of suppressing the short channel effects,and tunneling field effect transistors(TFETs)based on GAA structures also present improved performance.In this paper,a non-quasi-static(NQS) device model is developed for nanowire GAA TFETs.The model can predict the transient current and capacitance varying with operation frequency,which is beyond the ability of the quasi-static(QS) model published before.Excellent agreements between the model results and numerical simulations are obtained.Moreover,the NQS model is derived from the published QS model including the current-voltage(I-V) and capacitance-voltage(C-V) characteristics.Therefore,the NQS model is compatible with the QS model for giving comprehensive understanding of GAA TFETs and would be helpful for further study of TFET circuits based on nanowire GAA structure.
文摘The fundamental advantages of carbon-based graphene material,such as its high tunnelling probability,symmetric band structure(linear dependence of the energy band on the wave direction),low effective mass,and characteristics of its 2D atomic layers,are the main focus of this research work.The impact of channel thickness,gate under-lap,asymmetric source/drain doping method,workfunction of gate contact,and High-K material on Graphene-based Tunnel Field Effect Transistor(TFET)is analyzed with 20 nm technology.Physical modelling and electrical characteristic performance have been simulated using the Atlas device simulator of SILVACO TCAD with user-defined material syntax for the newly included graphene material in comparison to silicon carbide(SiC).The simulation results in significant suppression of ambipolar current to voltage characteristics of TFET and modelled device exhibits a significant improvement in subthreshold swing(0.0159 V/decade),the ratio of Ion/Ioff(1000),and threshold voltage(-0.2 V with highly doped p-type source and 0.2 V with highly doped n-type drain)with power supply of 0.5 V,which make it useful for low power digital applications.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61306116 and 61472322)
文摘A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11604019,61574020,and 61376018)the Ministry of Science and Technology of China(Grant No.2016YFA0301300)+1 种基金the Fund of State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),Chinathe Fundamental Research Funds for the Central Universities,China(Grant No.2016RCGD22)
文摘Tunneling field effect transistors（TFETs） based on two-dimensional materials are promising contenders to the traditional metal oxide semiconductor field effect transistor, mainly due to potential applications in low power devices. Here,we investigate the TFETs based on two different integration types： in-plane and vertical heterostructures composed of two kinds of layered phosphorous（β-P and δ-P） by ab initio quantum transport simulations. NDR effects have been observed in both in-plane and vertical heterostructures, and the effects become significant with the highest peak-to-valley ratio（PVR）when the intrinsic region length is near zero. Compared with the in-plane TFET based on β-P and δ-P, better performance with a higher on/off current ratio of - 10-6 and a steeper subthreshold swing（SS） of - 23 mV/dec is achieved in the vertical TFET. Such differences in the NDR effects, on/off current ratio and SS are attributed to the distinct interaction nature of theβ-P and δ-P layers in the in-plane and vertical heterostructures.
基金supported by the National Natural Science Foundation of China(Grant Nos.61176038 and 61474093)the Science and Technology Planning Project of Guangdong Province,China(Grant No.2015A010103002)the Technology Development Program of Shaanxi Province,China(Grant No.2016GY-075)
文摘A Ⅲ-Ⅴ heterojunction tunneling field-effect transistor(TFET) can enhance the on-state current effectively,and GaAsSb/InGaAs heterojunction exhibits better performance with the adjustable band alignment by modulating the alloy composition.In this paper,the performance of the cylindrical surrounding-gate GaAsSb/InGaAs heterojunction TFET with gate-drain underlap is investigated by numerical simulation.We validate that reducing drain doping concentration and increasing gate-drain underlap could be effective ways to reduce the off-state current and subthreshold swing(SS),while increasing source doping concentration and adjusting the composition of GaAsSbInGaAs can improve the on-state current.In addition,the resonant TFET based on GaAsSb/InGaAs is also studied,and the result shows that the minimum and average of SS reach 11 mV/decade and 20 mV/decade for five decades of drain current,respectively,and is much superior to the conventional TFET.
基金supported by the National Natural Science Foundation of China(Grant No.61306105)the National Science and Technology Major Project of China(Grant No.2011ZX02708-002)+1 种基金the Tsinghua University Initiative Scientific Research Programthe Tsinghua National Laboratory for Information Science and Technology(TNList)Cross-discipline Foundation of China
文摘A Si/Ge heterojunction line tunnel field-effect transistor （LTFET） with a symmetric heteromaterial gate is proposed. Compared to single-material-gate LTFETs, the heteromaterial gate LTFET shows an off-state leakage current that is three orders of magnitude lower, and steeper subthreshold characteristics, without degradation in the on-state current. We reveal that these improvements are due to the induced local potential barrier, which arises from the energy-band profile modulation effect. Based on this novel structure, the impacts of the physical parameters of the gap region between the pocket and the drain, including the work-function mismatch between the pocket gate and the gap gate, the type of dopant, and the doping concentration, on the device performance are investigated. Simulation and theoretical calculation results indicate that the gap gate material and n-type doping level in the gap region should be optimized simultaneously to make this region fully depleted for further suppression of the off-state leakage current.
