The evolution of the traditional metal oxide semiconductor field effect transistor(MOSFET) from planar single gate devices into 3 D multiple gates has led to higher package density and high current drive.However, due ...The evolution of the traditional metal oxide semiconductor field effect transistor(MOSFET) from planar single gate devices into 3 D multiple gates has led to higher package density and high current drive.However, due to continuous scaling and as a consequent close proximity between source and drain in the nano-regime, these multigate devices have been found to suffer from performance degrading short channel effects(SCEs).In this paper, a three dimensional analytical model of a trigate MOSFET incorporating non-conventional structural techniques like silicon-on-insulator, gate and channel engineering in addition to gate oxide stack is presented.The electrostatic integrity and device capability of suppressing SCEs is investigated by deriving the potential distribution profile using the three dimensional Poisson’s equation along with suitable boundary conditions. The other device parameters like threshold voltage and subthreshold swing are produced from the surface potential model.The validity of the proposed structure is established by the close agreement among the results obtained from the analytical model and simulation results.展开更多
Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantization effects of thin film silicon tri-gate MOSFETs by using...Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantization effects of thin film silicon tri-gate MOSFETs by using variational approach. An analytical expression of the inversion charge distribution function（ICDF） or wave function for the tri-gate MOSFETs has been obtained. This obtained ICDF is used to calculate the important device parameters, such as the inversion charge centroid and inversion charge density. The results are validated against with the simulation data.展开更多
基金Project supported by the Ministry of Electronics and Information Technology(MEITy),Govt. of India under its Visvesvaraya PhD Scheme(PhD-MLA/4(55)/2015-16)
文摘The evolution of the traditional metal oxide semiconductor field effect transistor(MOSFET) from planar single gate devices into 3 D multiple gates has led to higher package density and high current drive.However, due to continuous scaling and as a consequent close proximity between source and drain in the nano-regime, these multigate devices have been found to suffer from performance degrading short channel effects(SCEs).In this paper, a three dimensional analytical model of a trigate MOSFET incorporating non-conventional structural techniques like silicon-on-insulator, gate and channel engineering in addition to gate oxide stack is presented.The electrostatic integrity and device capability of suppressing SCEs is investigated by deriving the potential distribution profile using the three dimensional Poisson’s equation along with suitable boundary conditions. The other device parameters like threshold voltage and subthreshold swing are produced from the surface potential model.The validity of the proposed structure is established by the close agreement among the results obtained from the analytical model and simulation results.
基金The authors are gratefu l for the financial support by W OS—A Scheme,Department of Science and Technology,New Delhi,Govern ment of India through the grant SRJWOS-A/ET-41/2011.
文摘Quantum effects are predominant in tri-gate MOSFETs, so a model should be developed. For the first time, this paper presents the analytical model for quantization effects of thin film silicon tri-gate MOSFETs by using variational approach. An analytical expression of the inversion charge distribution function（ICDF） or wave function for the tri-gate MOSFETs has been obtained. This obtained ICDF is used to calculate the important device parameters, such as the inversion charge centroid and inversion charge density. The results are validated against with the simulation data.
