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Fabrication of Ultra Deep Electrical Isolation Trenches with High Aspect Ratio Using DRIE and Dielectric Refill
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作者 朱泳 闫桂珍 +4 位作者 王成伟 杨振川 范杰 周健 王阳元 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2005年第1期16-21,共6页
A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimi... A novel technique to fabricate ultra deep high aspect ratio electrical isolation trenches with DRIE and dielectric refill is presented.The relationship between trench profile and DRIE parameters is discussed.By optimizing DRIE parameters and RIE etching the trenches’ opening,the ideal trench profile is obtained to ensure that the trenches are fully refilled without voids.The electrical isolation trenches are 5μm wide and 92μm deep with 0.5μm thick oxide layers on the sidewall as isolation material.The measured I-V result shows that the trench structure has good electrical isolation performance:the average resistance in the range of 0~100V is more than 10 11Ω and no breakdown appears under 100V.This isolation trench structure has been used in fabrication of the bulk integrated micromachined gyroscope,which shows high performance. 展开更多
关键词 deep reactive ion etching electrical isolation trenches bulk microstructures monolithic integration
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Electrodeposition of Gold to Conformally Fill High-Aspect-Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols 被引量:2
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作者 Sami Znati Nicholas Chedid +3 位作者 Houxun Miao Lei Chen Eric E. Bennett Han Wen 《Journal of Surface Engineered Materials and Advanced Technology》 2015年第4期207-213,共7页
Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in ... Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of X-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplating protocol that reliably filled trenches for such structures. 展开更多
关键词 PULSED ELECTROPLATING Gold ELECTROPLATING High Aspect Ratio trenches Gold Electrodepostion Di-rect Current Electrodeposition PULSED vs. Direct Current ELECTROPLATING Atomic LAYER Deposition Platinum Seed LAYER Silicon TRENCH Gratings TRENCH FILLING Grating FILLING ALD Adhesive LAYER
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NUMERICAL SIMULATION OF 3-D TURBULENT FLOWS OVER DREDGED TRENCHES
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作者 Han Guoqi Wang Deguan Xu Xieqing Department of Environmental Engineering, Hohai University, Nanjing 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 1989年第4期313-322,共10页
A 3- D free surface flow in open channels based on the Reynolds equations with the k-ε turbulence closure model is presented in this paper. Insted of the 'rigid lid' approximation, the solution of the free su... A 3- D free surface flow in open channels based on the Reynolds equations with the k-ε turbulence closure model is presented in this paper. Insted of the 'rigid lid' approximation, the solution of the free surface equation is implemented in the velocity-pressure iterative procedure on the basis of the conventional SIMPLE method. This model was used to compute the flow in rectangular channels with trenches dredged across the bottom. The velocity, eddy viscosity coefficient, turbulent shear stress, turbulent kinetic energy and elevation of the free surface can be obtained. The computed results are in good agreement with previous experimental data. 展开更多
关键词 3- D surface water flow model dredged trenches k turbulence model numerical simulation.
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Selective Area Growth of GaAs in V-Grooved Trenches on Si(001) Substrates by Aspect-Ratio Trapping
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作者 李士颜 周旭亮 +5 位作者 孔祥挺 李梦珂 米俊萍 边静 王伟 潘教青 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第2期148-151,共4页
A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si(O01) substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposit... A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si(O01) substrates is achieved by using the aspect-ratio trapping method. GaAs thin films are deposited via metal-organic chemical vapor deposition by using a two-step growth process. Threading disJocations arising from lattice mismatch are trapped by laterally confining sidewalls, and antiphase domains boundaries are completely restricted by V-groove trenches with Si { 111} facets. Material quality is confirmed by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution X-ray diffraction. Low temperature photoluminescence (PL) measurement is used to analyze the thermal strain relaxation in GaAs layers. This approach shows great promise for the realization of high mobility devices or optoelectronie integrated circuits on Si substrates. 展开更多
关键词 Selective Area Growth of GaAs in V-Grooved trenches on Si Substrates by Aspect-Ratio Trapping
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Study of Paleoearthquakes by Excavation of Grouped Trenches on the Zemuhe Fault in Daqingliangzi,Xichang,Sichuan
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作者 Tian Qinjian Ren Zhikun Zhang Junlong 《Earthquake Research in China》 2009年第1期56-67,共12页
Uncertainties are common in the dating of paleoearthquakes.To improve the credibility of the dating of paleoearthquakes,analysis was done on fault activity,sedimentary environment and seismo-geomorphology to investiga... Uncertainties are common in the dating of paleoearthquakes.To improve the credibility of the dating of paleoearthquakes,analysis was done on fault activity,sedimentary environment and seismo-geomorphology to investigate paleoearthquakes along the Zemuhe active fault zone.Grouped trenches were excavated near Daqingliangzi,which revealed three palaeoearthquake events aged 160a,3100a and 5500a~8900a,respectively,including recurrence intervals of about 3000a.Sedimentary processes related to strike-slip fault type earthquakes were discussed,and a sedimentary model was put forward for strike-slip faults at hillsides where drumlin and reverse scarp developed. 展开更多
关键词 Palaeoearthquake Grouped trenches Micro-geomorphology Zemuhe River sedimentary model
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Submarine Trenches and Wave-Wave Interactions Enhance the Sediment Resuspension Induced by Internal Solitary Waves 被引量:1
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作者 TIAN Zhuangcai LIU Chao +2 位作者 JIA Yonggang SONG Lei ZHANG Mingwei 《Journal of Ocean University of China》 SCIE CAS CSCD 2023年第4期983-992,共10页
Internal solitary waves(ISWs)are nonlinear fluctuations in nature that could cause significant interactions between seawater and the seabed.ISWs have been proven to be an adequate cause of sediment resuspension in sha... Internal solitary waves(ISWs)are nonlinear fluctuations in nature that could cause significant interactions between seawater and the seabed.ISWs have been proven to be an adequate cause of sediment resuspension in shallow and deep-sea environments.In the South China Sea,ISWs have the largest amplitude globally and directly interact with the seabed near the Dongsha slope in the northern South China Sea.We analyzed the water profile and high-resolution multibeam bathymetric data near the Dongsha slope and revealed that submarine trenches have a significant impact on the sediment resuspension by ISWs.Moreover,ISWs in the zone of the wave-wave interaction enhanced sediment mixing and resuspension.The concentration of the suspended particulate matter inside submarine trenches was significantly higher than that outside them.The concentration of the suspended particulate matter near the bottoms of trenches could be double that outside them and formed a vast bottom nepheloid layer.Trenches could increase the concentration of the suspended particulate matter in the entire water column,and a water column with a high concentration of the suspended particulate matter was formed above the trench.ISWs in the wave-wave interaction zone near Dongsha could induce twice the concentration of the bottom nepheloid layer than those in other areas.The sediment resuspension caused by ISWs is a widespread occurrence all around the world.The findings of this study can offer new insights into the influence of submarine trench and wave-wave interaction on sediment resuspension and help in geohazard assessment. 展开更多
关键词 sediment resuspension internal solitary waves TRENCH wave-wave interaction
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Study on Hydrodynamic Characteristics of Pipelines in Open Trenches
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作者 张日向 邢至庄 郭建江 《China Ocean Engineering》 SCIE EI 1999年第4期419-428,共10页
Based on hydrodynamic model tests, the relationship between relative hydrodynamic coefficient and cycle coefficient K-c is obtained by introducing the relative trench shape coefficient a(r); there isa good relation fo... Based on hydrodynamic model tests, the relationship between relative hydrodynamic coefficient and cycle coefficient K-c is obtained by introducing the relative trench shape coefficient a(r); there isa good relation for the shallow trench. According to a(r) of the designed trench shape and pre-chosen K-c, the reduction coefficient and sheltering effect can be decided by the result provided in this paper. 展开更多
关键词 TRENCH PIPELINE hydrodynamic characteristics relative trench shape coefficient cycle coefficient
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A Numerical Model for Natural Backfill of Pipeline Trenches Subjected to Unidirectional/Oscillatory Flows
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作者 Kervin YEOW 《China Ocean Engineering》 SCIE EI 2005年第2期269-286,共18页
A numerical model for the self-burial of a pipeline trench is developed. Morphological evolutions of a pipeline trench under steady-current or oscillatory-flow conditions are simulated with/without a pipeline inside t... A numerical model for the self-burial of a pipeline trench is developed. Morphological evolutions of a pipeline trench under steady-current or oscillatory-flow conditions are simulated with/without a pipeline inside the trench. The oscillatory flow in this study represents the action of waves. The two-dimensional Reynolds-averaged continuity and Navier-Stokes equations with the standard k-ε turbulence closure, as well as the sediment transport equations, are solved with the finite difference method in a curvilinear coordinate system. Both bed and suspended loads of sediment transport are included in the morphological model. Because of the lack of experimental data on the backfilling of pipeline trenches, the numerical model is firstly verified against three closely-relevant experiments available in literature. A detailed measurement of the channel migration phenomenon under steady currents is employed for the assessment of the integral performance of the model. The two experimental results from U-tube tests are used to validate the model's ability in predicting oscillatory flows. Different time-marching schemes are employed for the morphological computation under unidirectional and oscillatory conditions. It is found that vortex motions within the trench play an important role in the trench development. 展开更多
关键词 numerical model BACKFILL sediment transport offshore pipeline TRENCH oscillatary flow
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A snapback-free and high-speed SOI LIGBT with double trenches and embedded fully NPN structure
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作者 Chenxia Wang Jie Wei +2 位作者 Diao Fan Yang Yang Xiaorong Luo 《Journal of Semiconductors》 EI CAS CSCD 2020年第10期50-55,共6页
A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side... A novel 600 V snapback-free high-speed silicon-on-insulator lateral insulated gate bipolar transistor is proposed and investigated by simulation.The proposed device features an embedded NPN structure at the anode side,and double trenches together with an N-type carrier storage(N-CS)layer at the cathode side,named DT-NPN LIGBT.The NPN structure not only acts as an electron barrier to eliminate the snapback effect in the on-state within a smaller cell pitch but also provides an extra electron extracting path during the turn-off stage to decrease the turnoff loss(E_(off)).The double cathode trenches and N-CS layer hinder the hole from being extracted by the cathode quickly.They then enhance carrier storing effect and lead to a reduced on-state voltage drop(V_(on)).The latch-up immunity is improved by the double cathode trenches.Hence,the DT-NPN LIGBT obtains a superior tradeoff between the V_(on)and E_(off).Additionally,the DT-NPN LIGBT exhibits an improved blocking capability and weak dependence of breakdown voltage(BV)on the P+anode doping concentration because the NPN structure suppresses triggering the PNP transistor.The proposed LIGBT reduces the E_(off)by 55%at the same V_(on),and improves the BV by 7.3%compared to the conventional LIGBT. 展开更多
关键词 snapback-free fast switching SOI LIGBT trench gate E_(off)
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Focal depth,magnitude,and frequency distribution of earthquakes along oceanic trenches
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作者 O.S.Hammed O.I.Popoola +3 位作者 A.A.Adetoyinbo M.O.Awoyemi G.O.Badmus O.B.Ohwo 《Earthquake Science》 2013年第2期75-82,共8页
The occurrence of earthquakes in oceanic tren- ches can pose a tsunami threat to lives and properties in active seismic zones. Therefore, the knowledge of focal depth, magnitude, and time distribution of earthquakes a... The occurrence of earthquakes in oceanic tren- ches can pose a tsunami threat to lives and properties in active seismic zones. Therefore, the knowledge of focal depth, magnitude, and time distribution of earthquakes along the trenches is needed to investigate the future occurrence of earthquakes in the zones. The oceanic trenches studied, were located from the seismicity map on: latitude +51 ° to+53° and longitude -160° to 176° (Aleutian Trench), latitude +40° to +53° and longitude +148° to+165° (Japan Trench), and latitude -75° to -64° and longitude -15° to +30° (Peru-Chile Trench). The following features of seis- mic events were considered: magnitude distribution, focal depth distribution, and time distribution of earthquake. The results obtained in each trench revealed that the earthquakes increased with time in all the regions. This implies that the lithospheric layer is becoming more unstable. Thus, tectonic stress accumulation is increasing with time. The rate of increase in earthquakes at the Peru-Chile Trench is higher than that of the Japan Trench and the Aleutian Trench. This implies that the convergence of lithospheric plates is higher in the Peru-Chile Trench. Deep earthquakes were observed across all the trenches. The shallow earthquakes were more prominent than intermediate and deep earthquakes in all thetrenches. The seismic events in the trenches are mostly of magnitude range 3.0-4.9. This magnitude range may indi- cate the genesis of mild to moderate tsunamis in the trench zone in near future once sufficient slip would occur with displacement of water column. 展开更多
关键词 Focal depth MAGNITUDE EarthquakeOceanic trenche
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Variable-K double trenches SOI LDMOS with high-concentration P-pillar
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作者 Lijuan Wu Lin Zhu Xing Chen 《Chinese Physics B》 SCIE EI CAS CSCD 2020年第5期498-503,共6页
A variable-K trenches silicon-on-insulator(SOI)lateral diffused metal-oxide-semiconductor field-effect transistor(MOSFET)with a double conductive channel is proposed based on the enhancement of low dielectric constant... A variable-K trenches silicon-on-insulator(SOI)lateral diffused metal-oxide-semiconductor field-effect transistor(MOSFET)with a double conductive channel is proposed based on the enhancement of low dielectric constant media to electric fields.The device features variable-K dielectric double trenches and a P-pillar between the trenches(VK DT-P LDMOS).The low-K dielectric layer on the surface increases electric field of it.Adding a variable-K material introduces a new electric field peak to the drift region,so as to optimize electric field inside the device.Introduction of the high-concentration vertical P-pillar between the two trenches effectively increases doping concentration of the drift region and maintains charge balance inside it.Thereby,breakdown voltage(BV)of the device is increased.The double conductive channels provide two current paths that significantly reduce specific on-resistance(Ron,sp).Simulation results demonstrate that a 17-μm-length device can achieve a BV of 554 V and a low on-resistance of 13.12 mΩ·cm^2.The Ron,sp of VK DT-P LDMOS is reduced by 78.9%compared with the conventional structure. 展开更多
关键词 variable-K(VK) trench technology specific on-resistance(Ron sp) breakdown voltage(BV)
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Micro-3D sculptured metastructures with deep trenches for sub-10μm resolution
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作者 Anıl Çağrı Atak Emre Ünal Hilmi Volkan Demir 《Microsystems & Nanoengineering》 2025年第2期267-275,共9页
Three-dimensional(3D)printing allows for the construction of complex structures.However,3D-printing vertical structures with a high aspect ratio remains a pending challenge,especially when a high lateral resolution is... Three-dimensional(3D)printing allows for the construction of complex structures.However,3D-printing vertical structures with a high aspect ratio remains a pending challenge,especially when a high lateral resolution is required.Here,to address this challenge,we propose and demonstrate micro-3D sculptured metastructures with deep trenches of 1:4(width:height)aspect ratio for sub-10µm resolution.Our construction relies on two-photon polymerization for a 3D-pattern with its trenches,followed by electroplating of a thick metal film and its dry etching to remove the seed layer.To test the proposed fabrication process,we built up three-dimensional RF metastructures showcasing the depth effect as the third dimension.Using the numerical solutions,we custom-tailored these metastructure resonators to fall within a specific resonance frequency range of 4-6 GHz while undertaking comparative analyses regarding overall footprint,quality factor,and resonance frequency shift as a function of their cross-sectional aspect ratio.The proposed process flow is shown to miniaturize metal footprint and tune the resonance frequency of these thick 3Dmetastructures while increasing their quality factor.These experimental findings indicate that this method of producing trenches via 3D-printing provides rich opportunities to implement high-aspect-ratio,complex structures. 展开更多
关键词 two photon polymerization dry etching ELECTROPLATING three dimensional printing high aspect ratio micro d sculptured metastructures deep trenches construction complex structureshowever d printing
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Widespread and active piezotolerant microorganisms mediate phenolic compound degradation under high hydrostatic pressure in hadal trenches
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作者 Hao Ling Yongxin Lv +2 位作者 Yu Zhang Ning‑Yi Zhou Ying Xu 《Marine Life Science & Technology》 SCIE CSCD 2024年第2期331-348,共18页
Phenolic compounds,as well as other aromatic compounds,have been reported to be abundant in hadal trenches.Although high-throughput sequencing studies have hinted at the potential of hadal microbes to degrade these co... Phenolic compounds,as well as other aromatic compounds,have been reported to be abundant in hadal trenches.Although high-throughput sequencing studies have hinted at the potential of hadal microbes to degrade these compounds,direct microbiological,genetic and biochemical evidence under in situ pressures remain absent.Here,a microbial consortium and a pure culture of Pseudomonas,newly isolated from Mariana Trench sediments,efficiently degraded phenol under pressures up to 70 and 60 MPa,respectively,with concomitant increase in biomass.By analyzing a high-pressure(70 MPa)culture metatranscriptome,not only was the entire range of metabolic processes under high pressure generated,but also genes encod-ing complete phenol degradation via ortho-and meta-cleavage pathways were revealed.The isolate of Pseudomonas also contained genes encoding the complete degradation pathway.Six transcribed genes(dmpKLMNOP_(sed))were functionally identified to encode a multicomponent hydroxylase catalyzing the hydroxylation of phenol and its methylated derivatives by heterogeneous expression.In addition,key catabolic genes identified in the metatranscriptome of the high-pressure cultures and genomes of bacterial isolates were found to be all widely distributed in 22 published hadal microbial metagenomes.At microbiological,genetic,bioinformatics,and biochemical levels,this study found that microorganisms widely found in hadal trenches were able to effectively drive phenolic compound degradation under high hydrostatic pressures.This information will bridge a knowledge gap concerning the microbial aromatics degradation within hadal trenches. 展开更多
关键词 Hadal trench High hydrostatic pressure Phenolic compounds degradation Piezotolerant microorganisms Widespread distribution
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一种新型P-shield区自钳位的低比导通电阻SiC MOSFET器件
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作者 孔谋夫 赵亮 +2 位作者 艾昭宇 程泽俞 邓鸿飞 《微电子学》 北大核心 2025年第1期140-146,共7页
提出了一种采用自偏置PMOS钳位栅极沟槽底部P-shield区的新型沟槽型SiC功率MOSFET器件。提出器件集成的PMOS以沟槽底部P-shield区为源极、P+源区为漏极及沟槽内填充金属为栅极,且该PMOS的栅极与漏极短接。利用该PMOS的钳位作用,实现对... 提出了一种采用自偏置PMOS钳位栅极沟槽底部P-shield区的新型沟槽型SiC功率MOSFET器件。提出器件集成的PMOS以沟槽底部P-shield区为源极、P+源区为漏极及沟槽内填充金属为栅极,且该PMOS的栅极与漏极短接。利用该PMOS的钳位作用,实现对栅极沟槽底部的P-shield区电位的调控。当器件导通时,PMOS截止,P-shield区浮空,从而改善SiC MOSFET的沟道区的JFET效应,降低器件的比导通电阻;当器件处于阻断耐压状态时,自钳位PMOS导通,使得P-shield区的电位得到钳制,从而增强P-shield区对栅氧化层的电场屏蔽作用,提高器件的可靠性。仿真结果表明,该提出器件的击穿电压(BV)为1 430 V,比导通电阻(R_(on,sp))为1.70 mΩ·cm^(2);提出器件与传统器件相比耐压相近,R_(on,sp)获得改善,栅漏电荷和高频优值分别提升超过14.3%和20%,同时该器件具有比传统器件更低的栅氧电场。 展开更多
关键词 SiC Trench MOSFET 击穿电压 比导通电阻 栅氧电场
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Deep-sea Evolution Unlocked
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《Bulletin of the Chinese Academy of Sciences》 2025年第1期15-15,共1页
The hadal zone-Earth’s deepest oceanic trenches below 6,000 meters-has long been considered a lifeless abyss.Researchers from the Institute of Hydrobiology(IHB)and the Institute of Deep-Sea Science and Engineering(ID... The hadal zone-Earth’s deepest oceanic trenches below 6,000 meters-has long been considered a lifeless abyss.Researchers from the Institute of Hydrobiology(IHB)and the Institute of Deep-Sea Science and Engineering(IDSSE),both under the Chinese Academy of Sciences,together with collaborators from Northwestern Polytechnical University,recently decoded how fish thrive in this extreme realm through two evolutionary pathways while uncovering alarming traces of human pollution in these pristine ecosystems.Their discovery was published in Cell on March 6,2025. 展开更多
关键词 human pollution hadal zone deep sea evolution evolutionary pathways oceanic trenches fish
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Mariana Trench:The secrets of Earth's deepest point
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作者 刘畅 《疯狂英语(新读写)》 2025年第8期6-8,76,共4页
In 1875,the HMS(皇家海军舰艇)Challenger stopped in the middle of the Pacific Ocean,southwest of the Mariana Islands,to conduct a routine depth sounding.As they'd done countless times before,the British scientists ... In 1875,the HMS(皇家海军舰艇)Challenger stopped in the middle of the Pacific Ocean,southwest of the Mariana Islands,to conduct a routine depth sounding.As they'd done countless times before,the British scientists and sailors on board lowered a weighted rope into the water.Unlike those other times,however,the rope kept falling,seemingly without an end.After nearly 8,230 meters,it finally hit the bottom—the first human attempt at what became known as the Mariana Trench. 展开更多
关键词 Mariana Islands Pacific Ocean weighted rope Mariana Trench depth soundingas mariana trench HMS Challenger Depth Sounding
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语·库·构·建
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《疯狂英语(新读写)》 2025年第8期21-23,76,共4页
Ⅰ主题单词海洋环境coast海岸beach海滩wave海浪tide潮汐current(海洋或江河的)水流reef礁trench海沟salinity盐浓度海洋探索工具submarine潜艇.
关键词 TIDE coast REEF SALINITY current TRENCH SUBMARINE BEACH
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Subduction Initiation and Mafic Intrusions: Rethinking the South China Sea-Luzon Connection
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作者 HE Xiaobo HE Mingli +2 位作者 WANG Xingyue ZHAO Minghui DONG Miao 《CT理论与应用研究(中英文)》 2025年第5期826-829,共4页
The conventional view suggests that the subduction of the South China Sea plate beneath Luzon occurred due to the oceanic lithosphere’s high density,facilitating subduction initiation.However,before the South China S... The conventional view suggests that the subduction of the South China Sea plate beneath Luzon occurred due to the oceanic lithosphere’s high density,facilitating subduction initiation.However,before the South China Sea opened,a continental margin likely existed,meaning that Luzon was directly adjacent to the continental margin rather than the oceanic basin.This would make subduction initiation more challenging.Here,we propose a new model suggesting that during the formation of the South China Sea,extensive mafic magmatic underplating occurred along its continental margin.The high-density magmatic additions may have increased the overall density of the continental margin,potentially exceeding that of Luzon,thereby enabling subduction to proceed. 展开更多
关键词 Manila Trench mafic intrusions LUZON subduction initiation
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Research on paleoearthquakes in Jiuxian trenches across Nankou-Sunhe fault zone in Changping County of Beijing plain 被引量:6
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作者 江娃利 侯治华 谢新生 《Science China Earth Sciences》 SCIE EI CAS 2002年第2期160-173,共14页
An abundance of the phenomena of tectonic deformation and paleoseismic events of different times and their recurrent interval, as well as coseismic vertical displacements is exposed in Jiuxian trenches across the Nank... An abundance of the phenomena of tectonic deformation and paleoseismic events of different times and their recurrent interval, as well as coseismic vertical displacements is exposed in Jiuxian trenches across the Nankou-Sunhe fault zone in Changping County. The research result shows three paleoearthquakes occurring during the Holocene. They were dated as 10643 ± 250 a B.P.—9706 ± 1235 a B.P., 7894±150 a B.P.—7640 ± 650 a B.P, and 3987+100 a B.P.—3670 ± 310 a B.P, respectively. The coseismic vertical displacements are 1.0 m, 2.0 m, and 2.0 m, respectively. From a statistical formula of relation between historic earthquake magnitudes and surface seismic dislocations in North China, the magnitudes of these paleoearthquakes are inferred to be in a range fromM 7.7 toM 7.9. The research shows that the Holocene fault activity in the plain can be traced in the trenches according to the micro-geomorphic features. Many micro-structural phenomena are also found in these trenches. Identification of the paleoearthquakes in the Nankou-Sunhe fault zone during the Holocene time is of significance for assessment of future seismic risk in Beijing area. 展开更多
关键词 trench excavation Holocene fault activity PALEOEARTHQUAKE Nankou-Sunhe fault zone Beijing plain
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Community structure and activity potentials of archaeal communities in hadal sediments of the Mariana and Mussau trenches
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作者 Zixuan Wang Li Wang +8 位作者 Rulong Liu Zhenzhen Li JiaXin Wu Xing Wei Wenxia Wei Jiasong Fang Junwei Cao Yuli Wei Zhe Xie 《Marine Life Science & Technology》 SCIE CAS 2022年第1期150-161,共12页
Hadal trenches are the least explored marine habitat on earth. Archaea has been shown to be the dominant group in trench sediments. However, the activity potentials and detailed diversity of these communities as well ... Hadal trenches are the least explored marine habitat on earth. Archaea has been shown to be the dominant group in trench sediments. However, the activity potentials and detailed diversity of these communities as well as their inter-trench variations are still not known. In this study, we combined datasets from two pairs of primers to investigate at high resolution the structure and activity potentials of the archaeal communities in vertically sectioned sediment cores taken from the deepest points of the Mariana (10,853 m) and Mussau (7011 m) trenches. The compositions of the potentially active communities revealed, via 16S ribosomal RNA gene (rDNA) and RNA (rRNA), significant differences between samples. Marine Group I (MGI), with nine identified subgroups, was the most dominant class in the active archaeal communities of the two trenches. Significantly different species composition and vertical variations were observed between the two trenches. Vertical transitions from aerobic MGI α to anaerobic MGI η and υ subgroups were observed in MST but not in MT sediments, which might be related to the faster microbial oxygen consumption in MST. These results provide a better understanding on archaeal activity and diversity in trench sediments. 展开更多
关键词 Hadal trench SEDIMENTS ARCHAEA Diversity Potentially active archaeal community Marine Group I
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