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Interplay of parallel electric field and trapped electrons in kappa-Maxwellian auroral plasma for EMEC instability
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作者 M Nazeer M N S Qureshi C Shen 《Communications in Theoretical Physics》 SCIE CAS CSCD 2021年第1期78-86,共9页
In this paper,propagation characteristics of electromagnetic electron cyclotron(EMEC)waves based on kappa-Maxwellian distribution have been investigated to invoke the interplay of the electric field parallel to the Ea... In this paper,propagation characteristics of electromagnetic electron cyclotron(EMEC)waves based on kappa-Maxwellian distribution have been investigated to invoke the interplay of the electric field parallel to the Earth’s magnetic field and auroral trapped electrons.The dispersion relation for EMEC waves in kappa-Maxwellian distributed plasma has been derived using the contribution of the parallel electric field and trapped electron speed.Numerical results show that the presence of the electric field has a stimulating effect on growth rate,which is more pronounced at low values of wave number.It is also observed that as the threshold value of trapped electron speed is surpassed,it dominates the effect of the parallel electric field and EMEC instability is enhanced significantly.The electric field acts as another source of free energy,and growth can be obtained even in the absence of trapped electron drift speed and for very small values of temperature anisotropy.Thus the present study reveals the interplay of the parallel electric field and trapped electron speed on the excitation of EMEC waves in the auroral region. 展开更多
关键词 EMEC waves kappa-Maxwellian distribution trapped electrons parallel electric field in aurora
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Damping of Geodesic Acoustic Mode by Trapped Electrons
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作者 张双喜 高喆 +4 位作者 武文韬 仇志勇 张双喜 高喆 武文韬 《Plasma Science and Technology》 SCIE EI CAS CSCD 2014年第7期650-656,共7页
We study the Landau resonance between geodesic acoustic mode(GAM) and trapped electrons as a GAM’s collisionless damping. The assumption of ˉωde 〈〈ωbeis adopted.The damping rate induced by trapped electrons is... We study the Landau resonance between geodesic acoustic mode(GAM) and trapped electrons as a GAM’s collisionless damping. The assumption of ˉωde 〈〈ωbeis adopted.The damping rate induced by trapped electrons is found to be an increasing function of q. In low q range, circulating-ion-induced damping rate is larger than that induced by trapped electrons.As q increases, the latter becomes larger than the former. The reason is that trapped electrons’ resonant velocity is close to vtefrom the lower side, whiles circulating ions’ resonant velocity gets bigger further from vti. So the number of resonant trapped electrons increases, whiles the number of resonant circulating ions decreases. The amplitude of damping rate induced by trapped electrons in the edge plasma can be comparable to that induced by circulating ions in the low q range.Another phenomenon we found is that in the chosen range of, the damping caused by trapped electrons has a maximum value at point εq for different q. The reason is that as is close to q,trapped electorns’ resonant velocity is close to vte. 展开更多
关键词 geodesic acoustic mode landau resonance trapped electrons bounce frequency
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Effects of trapped electrons on the ion temperature gradient mode in tokamak plasmas with hollow density profiles
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作者 Jingchun LI Jiaqi DONG Songfen LIU 《Plasma Science and Technology》 SCIE EI CAS CSCD 2020年第5期16-24,共9页
The ion temperature gradient(ITG)mode in the presence of impurity ions and trapped electrons(TEs)is numerically investigated in tokamak plasmas with hollow density profiles,using the gyrokinetic integral eigenmode equ... The ion temperature gradient(ITG)mode in the presence of impurity ions and trapped electrons(TEs)is numerically investigated in tokamak plasmas with hollow density profiles,using the gyrokinetic integral eigenmode equation.It is found that in the inverted density plasma,the increase of the ITG enhances the growth rate and frequency of the ITG,and the density gradient plays an important role in the ITG modes.For weak density gradient situations,the trapped electron effects increase the instability of the ITG,while the impurity has an obviously stabilizing effect.For the strong density gradient cases,both the impurities and trapped electrons enhance the ITG instabilities.In addition,it is shown that the growth rate of the ITG decreases with positive magnetic shear s while the real frequency increases with positive magnetic shear.The growth rate of the ITG increases with negative magnetic shear s while the real frequency decreases with negative magnetic shear.The length of the calculated mode structure in the positive and negative magnetic shear intervals is also presented. 展开更多
关键词 micro-instabilities trapped electrons IMPURITIES
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Characteristics of dust acoustic waves in dissipative dusty plasma in the presence of trapped electrons
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作者 Ranjit K KALITA Manoj K DEKA +1 位作者 Apul N DEV Jnanjyoti SARMA 《Plasma Science and Technology》 SCIE EI CAS CSCD 2017年第5期21-28,共8页
The formation and propagation of nonlinear dust acoustic waves(DAWs) as solitary and solitary/shock waves in an unmagnetized, homogeneous, dissipative and collisionless dusty plasma comprising negatively charged mic... The formation and propagation of nonlinear dust acoustic waves(DAWs) as solitary and solitary/shock waves in an unmagnetized, homogeneous, dissipative and collisionless dusty plasma comprising negatively charged micron sized dust grains in the presence of free and trapped electrons with singly charged non-thermal positive ions is discussed in detail. The evolution characteristics of the solitary and shock waves are studied by deriving a modified Korteweg–de Vries–Burgers(mKdV–Burgers) equation using the reductive perturbation method. The mKdV–Burgers equation is solved considering the presence(absence) of dissipation. In the absence of dissipation the system admits a solitary wave solution, whereas in the presence of dissipation the system admits shock waves(both monotonic and oscillatory) as well as a combination of solitary and shock wave solutions. Standard methods of solving the evolution equation of shock(solitary) waves are used. The results are discussed numerically using standard values of plasma parameters. The findings may be useful for better understanding of formation and propagation of waves in astrophysical plasma. 展开更多
关键词 dust acoustic shock wave trapped electrons dissipation
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Effects of trapped electrons on off-axis lower hybrid current drive in tokamaks
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作者 焦一鸣 龙永兴 +3 位作者 董家齐 高庆弟 王爱科 刘永 《Chinese Physics B》 SCIE EI CAS CSCD 2007年第11期3464-3469,共6页
The effects of trapped electrons on off-axis lower hybrid current drive (LHCD) in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The co... The effects of trapped electrons on off-axis lower hybrid current drive (LHCD) in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The code is suitable for various auxiliary heating and current drive schemes in tokamak plasmas. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. It is shown that, as an electrostatic force, the lower hybrid wave causes some of the trapped electrons to be untrapped and lose their energy, which can cut the LHCD efficiency by about 30%. The ITER scaling law is also used to estimate the trapped electron effects. 展开更多
关键词 trapping electron effect off-axis lower hybrid current drive
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Schamel equation in an inhomogeneous magnetized sheared flow plasma with q-nonextensive trapped electrons
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作者 Shaukat Ali Shan Qamar-ul-Haque 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第2期428-434,共7页
An investigation is carried out for understanding the properties of ion–acoustic(IA) solitary waves in an inhomogeneous magnetized electron-ion plasma with field-aligned sheared flow under the impact of q-nonextens... An investigation is carried out for understanding the properties of ion–acoustic(IA) solitary waves in an inhomogeneous magnetized electron-ion plasma with field-aligned sheared flow under the impact of q-nonextensive trapped electrons. The Schamel equation and its stationary solution in the form of solitary waves are obtained for this inhomogeneous plasma. It is shown that the amplitude of IA solitary waves increases with higher trapping efficiency(β), while the width remains almost the same. Further, it is found that the amplitude of the solitary waves decreases with enhanced normalized drift speed, shear flow parameter and the population of the energetic particles. The size of the nonlinear solitary structures is calculated to be a few hundred meters and it is pointed out that the present results are useful to understand the solar wind plasma. 展开更多
关键词 sheared flow plasma density inhomogeniety electron trapping
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Effects of Trapped Electrons on Off-axis Lower Hybrid Current Drive
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作者 JIAO Yiming LONG Yongxing DONG Jiaqi GAO Qingdi WANG Aike LIU Yong 《Southwestern Institute of Physics Annual Report》 2006年第1期121-122,共2页
The effects of trapped electrons on off-axis lower hybrid current drive (LHCD) in tokamaks are studied. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped parti... The effects of trapped electrons on off-axis lower hybrid current drive (LHCD) in tokamaks are studied. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. 展开更多
关键词 Trapping electron effect Off-axis lower hybrid current drive
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Nonlinear Dust Acoustic Waves in a Magnetized Dusty Plasma with Trapped and Superthermal Electrons
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作者 S.Ahmadi ABRISHAMI M.Nouri KADIJANI 《Plasma Science and Technology》 SCIE EI CAS CSCD 2014年第6期545-551,共7页
In this work, the effects of superthermal and trapped electrons on the oblique propa- gation of nonlinear dust-acoustic waves in a magnetized dusty (complex) plasma are investigated. The dynamic of electrons is simu... In this work, the effects of superthermal and trapped electrons on the oblique propa- gation of nonlinear dust-acoustic waves in a magnetized dusty (complex) plasma are investigated. The dynamic of electrons is simulated by the generalized Lorentzian (k) distribution function (DF). The dust grains are cold and their dynamics are simulated by hydrodynamic equations. Using the standard reductive perturbation technique (RPT) a nonlinear modified Korteweg-de Vries (mKdV) equation is derived. Two types of solitary waves; fast and slow dust acoustic solitons, exist in this plasma. Calculations reveal that compressive solitary structures are likely to propagate in this plasma where dust grains are negatively (or positively) charged. The properties of dust acoustic solitons (DASs) are also investigated numerically. 展开更多
关键词 dust acoustic wave trapped electrons superthermal electrons kappa distribution function
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Ion-acoustic shock and solitary waves in magnetized plasma with Cairns-Gurevich distribution electrons
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作者 Rui Huo Jiulin Du 《Communications in Theoretical Physics》 2025年第6期181-188,共8页
The propagation properties of ion-acoustic solitary and shock waves in the magnetized viscous plasma with nonthermal trapped electrons are investigated.The Cairns-Gurevich distribution as the electron distribution is ... The propagation properties of ion-acoustic solitary and shock waves in the magnetized viscous plasma with nonthermal trapped electrons are investigated.The Cairns-Gurevich distribution as the electron distribution is considered to describe the plasma nonthermality and particle trapping.By adopting the reductive perturbation technique,we derived the nonlinear Schamel-Korteweg-de Vries-Burgers(SKdVB)equation,and then obtained the ion-acoustic shock and solitary wave solutions of the SKdVB equation for different limiting cases.It is found that the impact of nonthermal parameterα,external magnetic fieldΩ,obliqueness lz,wave speed U0,and the ion kinematic viscosityη0can significantly change the characteristics of the shock and solitary waves.These results may be useful for better understanding the propagation of nonlinear structures in space(i.e.Earth's magnetosphere and ionosphere,auroral regions)and laboratory plasma with nonthermal trapped electrons. 展开更多
关键词 ion-acoustic waves nonthermal plasma trapped electrons oblique propagation SKdVB equation
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Observation of trapped and passing runaway electrons by infrared camera in the EAST tokamak
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作者 Yong-Kuan Zhang Rui-Jie Zhou +4 位作者 Li-Qun Hu Mei-Wen Chen Yan Chao Jia-Yuan Zhang Pan Li 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第5期513-519,共7页
In EAST,synchrotron radiation is emitted by runaway electrons in the infrared band,which can be observed by infrared cameras.This synchrotron radiation is mainly emitted by passing runaway electrons with tens of MeV e... In EAST,synchrotron radiation is emitted by runaway electrons in the infrared band,which can be observed by infrared cameras.This synchrotron radiation is mainly emitted by passing runaway electrons with tens of MeV energy.A common feature of radiation dominated by passing runaway electrons is that it is strongest on the high field side.However,the deeply trapped runaway electrons cannot reach the high field side in principle.Therefore,in this case,the high field side radiation is expected to be weak.This paper reports for the first time that the synchrotron radiation from trapped runaway electrons dominates that from passing runaway electrons and is identifiable in an image.Although the synchrotron radiation dominated by trapped runaway electrons can be observed in experiment,the proportion of trapped runaway electrons is very low. 展开更多
关键词 TOKAMAK trapped runaway electron synchrotron radiation
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Electron trap-induced charge accumulation and surface reaction kinetics synergistically enhance overall nitrogen photofixation
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作者 Longjian Li Ping Zhang +5 位作者 Yongchong Yu Reyila Tuerhong Xiaoping Su Lijuan Han Enzhou Liu Jizhou Jiang 《Chinese Chemical Letters》 2025年第8期448-455,共8页
Available online Further oxidation of NH3produced via photocatalytic N_(2)fixation represents a promising strategy to enhance the economic value of N_(2)fixation.This work employs first-principles density functional t... Available online Further oxidation of NH3produced via photocatalytic N_(2)fixation represents a promising strategy to enhance the economic value of N_(2)fixation.This work employs first-principles density functional theory(DFT)calculations to demonstrate that incorporating Co into Ni O improves both N_(2)adsorption and activation as well as M-N electron exchange intensity.Guided by these predictions,a novel Co single-atom photocatalyst supported by nanoconfined Ni O@C nanosheets was synthesized using a direct metal atomization method,achieving high HNO_(3)production(60.54%).NH_(4)^(+)and NO_(3)^(-)production rates during N_(2)photofixation reached 67.97μmol g_(cat)^(-1)h^(-1)and 104.28μmol g_(cat)^(-1)h^(-1),respectively.The overall N_(2)→NH_(3)→HNO_(3)photofixation pathway was validated through in-situ diffuse reflectance infrared Fourier transform spectroscopy(DRIFTS)and^(15)N isotopic labeling.Mechanistic studies reveal that Co single-atom introduction serves as an electron trap,enhancing photogenerated electron accumulation with a five-fold increase in carrier density compared to Ni O@C,as observed via in-situ X-ray photoelectron spectroscopy(XPS).This synergistic effect between electron traps and N2adsorption/activation sites at Co single-atom centers supports rapid N_(2)reduction kinetics.Additionally,nanoconfined ink-bottle pores in the carbon layer impede NH_(3)desorption,further boosting NO_(3)-production.This work offers a comprehensive approach to optimizing N_(2)photofixation through electron regulation and surface reaction kinetics. 展开更多
关键词 N_(2)photofixation Co single-atom Nanoconfined Nio@c electron trap NO_(3)^(-)production
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The influence of trapping centres on the photoelectron decay in silver halide 被引量:7
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作者 李晓苇 张荣香 +3 位作者 刘荣鹃 杨少鹏 韩理 傅广生 《Chinese Physics B》 SCIE EI CAS CSCD 2006年第3期624-630,共7页
Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it i... Photoelectron is the foundation of latent image formation, the decay process of photoelectrons is influenced by all kinds of trapping centres in silver halide. By analysing the mechanism of latent image formation it is found that electron trap, hole trap, and one kind of recombination centre where free electron and trapped hole recombine are the main trapping centres in silver halide. Different trapping centres have different influences on the photoelectron behaviour. The effects of all kinds of typical trapping centres on the decay of photoelectrons are systematically investigated by solving the photoelectron decay kinetic equations. The results are in agreement with those obtained in the microwave absorption dielectric spectrum experiment. 展开更多
关键词 silver halide electron trap recombination centre hole trap
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Effect of trivalent rare earth ions doping on the fluorescence properties of electron trapping materials SrS:Eu^(2+) 被引量:3
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作者 孙家跃 刘振兴 杜海燕 《Journal of Rare Earths》 SCIE EI CAS CSCD 2011年第2期101-104,共4页
Trivalent rare-earth ions (La3+,Pr3+,Nd3+,Sm3+,Gd3+,Tb3+,Dy3+,Ho3+,Er3+,Tm3+,and Yb3+) were investigated as the codoped auxiliary sensitizer for the electron trapping materials SrS:Eu2+ in order to enha... Trivalent rare-earth ions (La3+,Pr3+,Nd3+,Sm3+,Gd3+,Tb3+,Dy3+,Ho3+,Er3+,Tm3+,and Yb3+) were investigated as the codoped auxiliary sensitizer for the electron trapping materials SrS:Eu2+ in order to enhance the fluorescence properties.It was found that Sm3+ and Tb3+ had the best photoluminescence stimulated luminescence (PSL) effect among the selected trivalent rare-earth ions.All the SrS:Eu2+ samples doped by different trivalent rare-earth ions could be stimulated by 980 nm laser after being exposed to the conventional sunlight,and they emitted PSL with the peak located at 615 nm.The result also indicated that some co-doped rare earth ions could increase fluorescence intensities of the traditional electron trapping materials SrS:Eu2+. 展开更多
关键词 electron trapping effect photo-stimulated luminescence optical storage materials rare earths
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Distribution of electron traps in SiO_2/HfO_2 nMOSFET
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作者 侯晓慧 郑雪峰 +5 位作者 王奥琛 王颖哲 文浩宇 刘志镜 李小炜 吴银河 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第5期363-368,共6页
In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO_2 layer have been extracted. Two peaks are o... In this paper, the principle of discharge-based pulsed I–V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO_2 layer have been extracted. Two peaks are observed, which are located at ?E ^-1.0 eV and-1.43 eV, respectively. It is found that the former one is close to the SiO_2/HfO_2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO_2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment,and reliability improvement for advanced semiconductor devices. 展开更多
关键词 energy and spatial distribution electron trap HFO2
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Research of Trap and Electron Density Distributions in the Interface of Polyimide/Al2O3 Nanocomposite Films Based on IDC and SAXS
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作者 Yuan-Yuan Liu Jing-Hua Yin +4 位作者 Xiao-Xu Liu Duo Sun Ming-Hua Chen Zhong-Hua Wu Bo Su 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第4期116-119,共4页
The distributions of traps and electron density in the interfaces between polyimide (PI) matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering (SAXS)... The distributions of traps and electron density in the interfaces between polyimide (PI) matrix and Al2O3 nanoparticles are researched using the isothermal decay current and the small-angle x-ray scattering (SAXS) tests. According to the electron density distribution for quasi two-phase mixture doped by spherical nanoparticles, the electron densities in the interfaces of PI/Al2O3 nanocomposite films are evaluated. The trap level density and carrier mobility in the interface are studied. The experimental results show that the distribution and the change rate of the electron density in the three layers of interface are different, indicating different trap distributions in the interface layers. There is a maximum trap level density in the second layer, where the maximum trap level density for the nanocomposite film doped by 25 wt% is 1.054 × 10^22 eV·m^-3 at 1.324eV, resulting in the carrier mobility reducing. In addition, both the thickness and the electron density of the nanocomposite film interface increase with the addition of the doped Al2O3 contents. Through the study on the trap level distribution in the interface, it is possible to further analyze the insulation mechanism and to improve the performance of nano-dielectric materials. 展开更多
关键词 AI PI Research of Trap and electron Density Distributions in the Interface of Polyimide/Al2O3 Nanocomposite Films Based on IDC and SAXS IDC Al
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Metastable Electron Traps in Modified Silicon-on-Insulator Wafer
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作者 Li-Hua Dai Da-Wei Bi +4 位作者 Zheng-Xuan Zhang Xin Xie Zhi-Yuan Hu Hui-Xiang Huang Shi-chang Zou 《Chinese Physics Letters》 SCIE CAS CSCD 2018年第5期78-81,共4页
We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions... We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator(SOI) wafers under different Si ion implantation conditions. It is confirmed that Si implantation into the buried oxide can create deep electron traps with large capture cross section to effectively improve the antiradiation capability of the SOI device. It is first proposed that the metastable electron traps accompanied with Si implantation can be avoided by adjusting the peak location of the Si implantation reasonably. 展开更多
关键词 SOI SI Metastable electron Traps in Modified Silicon-on-Insulator Wafer
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Lifetime measurement of the 3d^(9) ^(2)D_(3/2) metastable level in Mo^(15+)at an electron beam ion trap
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作者 刘佳林 王银涛 +7 位作者 屠秉晟 黄良玉 司然 李冀光 张明武 傅云清 邹亚明 姚科 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第10期400-404,共5页
An experimental measurement of the lifetime of 3d^(9) ^(2)D_(3/2) metastable level in Mo^(15+)is reported in this work.The Mo^(15+)ions are produced and trapped in an electron beam ion trap with a magnetic field of 0.... An experimental measurement of the lifetime of 3d^(9) ^(2)D_(3/2) metastable level in Mo^(15+)is reported in this work.The Mo^(15+)ions are produced and trapped in an electron beam ion trap with a magnetic field of 0.65 T.The decay photons emitted from 3d^(9) ^(2)D_(3/2) level are subsequently recorded via a cooled photomultiplier tube.Through meticulous scrutiny of potential systematic uncertainties affecting the measurement outcomes,we have determined the lifetime of Mo^(15+)3d^(9)2D_(3/2)metastable level to be 2.83(22)ms.The experimental result provides a clear distinguishment from existing calculations based on various theoretical approaches. 展开更多
关键词 lifetime measurement molybdenum ions metastable levels electron beam ion trap(EBIT)
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K-shell excitation dielectronic recombination resonance strengths of highly charged Helike to O-like Xe ions
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作者 Tianheng XU Gang XIONG +4 位作者 Jun XIAO Yang YANG Roger HUTTON Yarning ZOU Ke YAO 《Plasma Science and Technology》 SCIE EI CAS CSCD 2018年第7期72-76,共5页
Dielectronic recombination is an important process in high temperature plasmas. In the present work, the KLn (n=L, M, N and O) DR resonance strengths of He-like to O-like xenon ions are measured at the Shanghai elec... Dielectronic recombination is an important process in high temperature plasmas. In the present work, the KLn (n=L, M, N and O) DR resonance strengths of He-like to O-like xenon ions are measured at the Shanghai electron beam ion trap using a fast electron beam energy scanning method. The experiment uncertainty reaches about 6% with significant improvement of statistics. A relativistic configuration interaction calculation is also made. Theoretical results agree with the experiment results within 15% in most cases. 展开更多
关键词 dielectronic recombination (DR) electron ion beam trap (EBIT)
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Effect of High-Gate-Voltage Stress on the Reverse Gated-Diode Current in LDD nMOSFET’s 被引量:2
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作者 陈海峰 郝跃 马晓华 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第5期875-878,共4页
The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET's is studied. We find that the generation current peak decreases as the stress time increases. We ascribe this finding to the dom... The reverse generation current under high-gate-voltage stress condition in LDD nMOSFET's is studied. We find that the generation current peak decreases as the stress time increases. We ascribe this finding to the dominating oxide trapped electrons that reduce the effective drain bias, lowering the maximal generation rate. The density of the effective trapped electrons affecting the effective drain bias is calculated with our model. 展开更多
关键词 generation current high gate voltage stress trapped electron
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On-Resistance Degradations Under Different Stress Conditions in High Voltage pLEDMOS Transistors and an Improved Method 被引量:3
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作者 孙伟锋 吴虹 +2 位作者 时龙兴 易扬波 李海松 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第2期214-218,共5页
The on-resistance degradations of the p-type lateral extended drain MOS transistor (pLEDMOS) with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investiga... The on-resistance degradations of the p-type lateral extended drain MOS transistor (pLEDMOS) with thick gate oxide under different hot carrier stress conditions are different, which has been experimentally investigated. This difference results from the interface trap generation and the hot electron injection, and trapping into the thick gate oxide and field oxide of the pLEDMOS transistor. An improved method to reduce the on-resistance degradations is also presented, which uses the field oxide as the gate oxide instead of the thick gate oxide. The effects are analyzed with a MEDICI simulator. 展开更多
关键词 pLEDMOS on-resistance degradation hot electron injection and trapping thick gate oxide
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