Silicone gel is a prevailing material for encapsulation in insulated gate bipolar transistor(IGBT)power modules.The space charge transport behavior in silicone gel is significant to evaluate the electrical insulation ...Silicone gel is a prevailing material for encapsulation in insulated gate bipolar transistor(IGBT)power modules.The space charge transport behavior in silicone gel is significant to evaluate the electrical insulation characteristics.This paper focuses on the trap characteristics and electrical properties of the silicone gel,which were rarely studied before.The experiments are performed on the surface potential decay of silicone gel after the charge injection.Then,the energy distributions of electron or hole traps are determined by a double-trap energy level model,which can be fitted by the Gaussian distribution.In addition,the mobilities of positive and negative charges are determined,which are 1.38×10^(-12) m^(2)·V^(-1)·s^(-1) and 1.74×10^(12) m^(2)·V^(-1)·s^(-1),respectively.Furthermore,considering the heat as a byproduct resulting in thermal issues,the temperature-dependence of surface potential decay characteristics are also studied in this paper.When temperature rises,the decay rate of surface potential increases,especially when the temperature is higher than 80℃.Finally,the contrastive analysis illustrates that the trap characteristics of silicone gel are between the trap characteristics in liquid-state material and solid-state material,which supports the phenomenon that silicone gel is more resistive to the sharp edges in power modules.This work can provide a useful reference for the design of encapsulation in high-voltage IGBT power modules.展开更多
We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent pr...We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.展开更多
Objective The Lop Nor Basin is a very important Quaternary potash-formation basin in China. It is a typical sulphate- potash brine mine with an average grade of 1.4% （KC1） in underground concentrated brines. It is e...Objective The Lop Nor Basin is a very important Quaternary potash-formation basin in China. It is a typical sulphate- potash brine mine with an average grade of 1.4% （KC1） in underground concentrated brines. It is extraordinary that the reservoir of potassium-rich brines is glauberite stratum rather than halite rock. The anomalous potassium enrichment, advanced in relative early stage of lake evolution （sulphate stage）, has attracted much attention in the recent twenty years. Many researchers consider that there may be other source supply besides the Tarim River.展开更多
Thermal ageing is an important factor leading to the deterioration of crosslinked polyethylene(XLPE)cable insulation.In this paper,XLPE insulating material was prepared in the laboratory and treated by thermal ageing ...Thermal ageing is an important factor leading to the deterioration of crosslinked polyethylene(XLPE)cable insulation.In this paper,XLPE insulating material was prepared in the laboratory and treated by thermal ageing at 130℃ for durations of up to 40 days.Space charge and DC electrical breakdown characteristics were investigated to evaluate the DC electrical performance of differently aged XLPE.Furthermore,to gain deeper insight into the underlying mechanisms,the charge trap characteristics along with the chemical and crystalline structures were examined.The results show that,during the effective protection period of the antioxidant,the XLPE samples exhibit enhanced DC electrical performance,specifically higher DC breakdown strength and reduced space charge accumulation.This improvement is attributed to the evolution of the microstructure.In the initial ageing stage,the degree of crystallisation increases,whereas physicochemical defects are reduced,accompanied by a more concentrated trap energy distribution.As a result,charge injection and migration are effectively inhibited.In the later stage of ageing,the antioxidant efficacy weakens and molecular chain scission occurs,resulting in the disappearance of spherulitic structure and deterioration of electrical properties.These findings are essential for the understanding of the XLPE cable service performance and the enhancement of the XLPE DC electrical performance.展开更多
基金This work was supported by the National Natural Science Foundation of China-the State Grid Corporation Joint Fund for Smart Grid(U1766219)the Fundamental Research Funds for the Central Universities(2019QN120).
文摘Silicone gel is a prevailing material for encapsulation in insulated gate bipolar transistor(IGBT)power modules.The space charge transport behavior in silicone gel is significant to evaluate the electrical insulation characteristics.This paper focuses on the trap characteristics and electrical properties of the silicone gel,which were rarely studied before.The experiments are performed on the surface potential decay of silicone gel after the charge injection.Then,the energy distributions of electron or hole traps are determined by a double-trap energy level model,which can be fitted by the Gaussian distribution.In addition,the mobilities of positive and negative charges are determined,which are 1.38×10^(-12) m^(2)·V^(-1)·s^(-1) and 1.74×10^(12) m^(2)·V^(-1)·s^(-1),respectively.Furthermore,considering the heat as a byproduct resulting in thermal issues,the temperature-dependence of surface potential decay characteristics are also studied in this paper.When temperature rises,the decay rate of surface potential increases,especially when the temperature is higher than 80℃.Finally,the contrastive analysis illustrates that the trap characteristics of silicone gel are between the trap characteristics in liquid-state material and solid-state material,which supports the phenomenon that silicone gel is more resistive to the sharp edges in power modules.This work can provide a useful reference for the design of encapsulation in high-voltage IGBT power modules.
基金Supported by the National Science and Technology Major Project of China under Grant No 2013ZX02303007the National Key Research and Development Program of China under Grant No 2016YFA0301701the Youth Innovation Promotion Association of the Chinese Academy of Sciences under Grant No 2016112
文摘We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.
基金supported by the National Natural Science Foundation of China(Grant No.41002028)the Central Public-Interest Scientific Institution Basal Research Fund(Grant No.YK1404)Technology Foundation for Selected Overseas Chinese Scholar, Ministry of Personnel of China(Grant No.A1406)
文摘Objective The Lop Nor Basin is a very important Quaternary potash-formation basin in China. It is a typical sulphate- potash brine mine with an average grade of 1.4% （KC1） in underground concentrated brines. It is extraordinary that the reservoir of potassium-rich brines is glauberite stratum rather than halite rock. The anomalous potassium enrichment, advanced in relative early stage of lake evolution （sulphate stage）, has attracted much attention in the recent twenty years. Many researchers consider that there may be other source supply besides the Tarim River.
基金supported by the Science and Technology Project of State Grid Corporation of China(Grant SGSNKY00KJJS2100283).
文摘Thermal ageing is an important factor leading to the deterioration of crosslinked polyethylene(XLPE)cable insulation.In this paper,XLPE insulating material was prepared in the laboratory and treated by thermal ageing at 130℃ for durations of up to 40 days.Space charge and DC electrical breakdown characteristics were investigated to evaluate the DC electrical performance of differently aged XLPE.Furthermore,to gain deeper insight into the underlying mechanisms,the charge trap characteristics along with the chemical and crystalline structures were examined.The results show that,during the effective protection period of the antioxidant,the XLPE samples exhibit enhanced DC electrical performance,specifically higher DC breakdown strength and reduced space charge accumulation.This improvement is attributed to the evolution of the microstructure.In the initial ageing stage,the degree of crystallisation increases,whereas physicochemical defects are reduced,accompanied by a more concentrated trap energy distribution.As a result,charge injection and migration are effectively inhibited.In the later stage of ageing,the antioxidant efficacy weakens and molecular chain scission occurs,resulting in the disappearance of spherulitic structure and deterioration of electrical properties.These findings are essential for the understanding of the XLPE cable service performance and the enhancement of the XLPE DC electrical performance.
