Amorphous oxide semiconductors have drawn considerable attention as a replacement for ubiquitous silicon based technologies.By virtue of their flexible substrate compatibility and transparency,amorphous metal oxide se...Amorphous oxide semiconductors have drawn considerable attention as a replacement for ubiquitous silicon based technologies.By virtue of their flexible substrate compatibility and transparency,amorphous metal oxide semiconductor(AOS)thin film transistors(TFTs)are being explored in emerging flexible/transparent technologies.However,rapid advances in such technologies require the development of high-performance thin film transistors,which can be fabricated at low processing temperatures.In this review paper,we discuss the recent progress made in n-type semiconductor TFTs activated at low temperatures both on rigid and flexible substrates with a focus on the replacement of conventional high temperature annealing.Several low temperature processing approaches that have been reported in both vacuum deposited and solution processed n-type metal oxide semiconductor based thin film transistors are evaluated,with an emphasis on some novel techniques which can effectively modulate the electronic properties of the n-type metal oxide semiconductor systems at low temperatures.The final part of this review draws conclusions and discusses the outlook for future research efforts in achieving low temperature activated high performance n-type TFTs.展开更多
基金the funding from the MOE Tier 1 Grant RG 166/16 and the MOE Tier 2 Grant MOE2016-T2-1-100.
文摘Amorphous oxide semiconductors have drawn considerable attention as a replacement for ubiquitous silicon based technologies.By virtue of their flexible substrate compatibility and transparency,amorphous metal oxide semiconductor(AOS)thin film transistors(TFTs)are being explored in emerging flexible/transparent technologies.However,rapid advances in such technologies require the development of high-performance thin film transistors,which can be fabricated at low processing temperatures.In this review paper,we discuss the recent progress made in n-type semiconductor TFTs activated at low temperatures both on rigid and flexible substrates with a focus on the replacement of conventional high temperature annealing.Several low temperature processing approaches that have been reported in both vacuum deposited and solution processed n-type metal oxide semiconductor based thin film transistors are evaluated,with an emphasis on some novel techniques which can effectively modulate the electronic properties of the n-type metal oxide semiconductor systems at low temperatures.The final part of this review draws conclusions and discusses the outlook for future research efforts in achieving low temperature activated high performance n-type TFTs.
