A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to...A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.展开更多
基金supported by the National Natural Science Foundation of China (Grant No. 60876027)the State Key Program of the National Natural Science Foundation of China (Grant No. 61036004)+2 种基金the Shenzhen Science and Technology Foundation, China (Grant No. CXB201005250031A)the Fundamental Research Project of Shenzhen Science and Technology Foundation, China (Grant No. JC201005280670A)the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A)
文摘A unified charge-based model for fully depleted silicon-on-insulator （SOI） metal oxide semiconductor field-effect transistors （MOSFETs） is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson Boltzmann equa- tion, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.
