期刊文献+
共找到3篇文章
< 1 >
每页显示 20 50 100
Simulation of continuous terahertz wave transient state thermal effects on static water
1
作者 吕英进 徐德刚 +4 位作者 刘鹏翔 吕达 文岐业 张怀武 姚建铨 《Chinese Physics B》 SCIE EI CAS CSCD 2011年第10期253-257,共5页
We report a numerical simulation of continuous terahertz beam induced transient thermal effects on static water. The terahertz wave used in this paper has a Gaussian beam profile. Based on the transient heat conductio... We report a numerical simulation of continuous terahertz beam induced transient thermal effects on static water. The terahertz wave used in this paper has a Gaussian beam profile. Based on the transient heat conduction equation, the finite element method (FEM) is utilized to calculate the temperature distribution. The simulation results show the dynamic process of temperature change in water during terahertz irradiation. After about 300 s, the temperature reaches a steady state with a water layer thickness of 5 mm and a beam radius of 0.25 mm. The highest temperature increase is 7 K/mW approximately. This work motivates further study on the interaction between terahertz wave and bio-tissue, which has a high water content. 展开更多
关键词 TERAHERTZ transient thermal effect finite element method
原文传递
Heat transfer enhancement in MOSFET mounted on different FR4 substrates by thermal transient measurement
2
作者 Norazlina M S Dheepan Chakravarthii M K +2 位作者 Shanmugan S Mutharasu D Shahrom Mahmud 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第9期549-556,共8页
Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistan... Miniaturization of electronic package leads to high heat density and heat accumulation in electronics device, resulting in short life time and premature failure of the device. Junction temperature and thermal resistance are the critical parameters that determine the thermal management and reliability in electronics cooling. Metal oxide field effect transistor(MOSFET)is an important semiconductor device for light emitting diode-integrated circuit(LED IC) driver application, and thermal management in MOSFET is a major challenge. In this study, investigations on thermal performance of MOSFET are performed for evaluating the junction temperature and thermal resistance. Suitable modifications in FR4 substrates are proposed by introducing thermal vias and copper layer coating to improve the thermal performance of MOSFET. Experiments are conducted using thermal transient tester(T3ster) at 2.0 A input current and ambient temperature varying from25℃ to 75℃. The thermal parameters are measured for three proposed designs: FR4 with circular thermal vias, FR4 with single strip of copper layer and embedded vias, and FR4 with I-shaped copper layer, and compared with that of plain FR4 substrate. From the experimental results, FR4I-shaped shows promising results by 33.71% reduction in junction temperature and 54.19% reduction in thermal resistance. For elevated temperature, the relative increases in junction temperature and thermal resistance are lower for FR4I-shaped than those for other substrates considered. The introduction of thermal vias and copper layer plays a significant role in thermal performance. 展开更多
关键词 metal oxide field effect transistor(MOSFET) thermal transient measurement heat transfer path FR4
原文传递
Concentration dependent nonlinear refraction in chloroaluminum phthalocyanine/ethanol solution
3
作者 杨俊义 宋瑛林 顾济华 《Chinese Physics B》 SCIE EI CAS CSCD 2009年第7期2828-2834,共7页
Nonlinear refractive properties of chloroaluminum phthalocyanine (CAP) in ethanol solution are studied using the Z-scan technique with picosecond (ps) and nanosecond (ns) laser pulses at a wavelength of 532nm. A... Nonlinear refractive properties of chloroaluminum phthalocyanine (CAP) in ethanol solution are studied using the Z-scan technique with picosecond (ps) and nanosecond (ns) laser pulses at a wavelength of 532nm. A transition from self-focusing to self-defocusing in CAP solution excited by 10 ns pulses is observed during the decrease of its concentration.This transition is due to co-existing excited-state refraction and transient thermal lensing effects.The experimental results are described very well using the rate-equation model and the theory of transient thermal refraction in liquids.The refractive cross sections of the excited-state are also obtained. 展开更多
关键词 transient thermal lensing effect Z-SCAN excited-state refraction
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部