The decays of transient photoconductivity and their light-induced changes of polymorphous silicon (pm-Si:H) films were investigated. The decays can be fit fairly well by a sum of two exponential decay functions, which...The decays of transient photoconductivity and their light-induced changes of polymorphous silicon (pm-Si:H) films were investigated. The decays can be fit fairly well by a sum of two exponential decay functions, which indicates that there are two kinds of traps contributing to the process. The light-induced changes of the concentration and energy level of the traps were estimated. The results show that the light-induced changes in trap energy position Et, trap concentration Nt as well as photoconductivity are markedly less for pm-Si:H than that for a-Si:H.展开更多
Experiments on fs laser-induced transient grating （LITG） in carbon bisulfide （CS2） are carried out to explore the chirp characteristics of a white-light supercontinuum （SC） generated by a 800-nm, 160-fs laser pu...Experiments on fs laser-induced transient grating （LITG） in carbon bisulfide （CS2） are carried out to explore the chirp characteristics of a white-light supercontinuum （SC） generated by a 800-nm, 160-fs laser pulse in a 4-mm thick Al2O3 crystal. Two orders of diffraction signals of SC by fs LITG in CS2 are observed, demonstrating that both the third-order process and the fifth-order process are present simultaneously. The experimental results also imply that the formation of an fs transient refractive-index grating in CS2 is mainly due to the electronic polarization process.展开更多
Practices of IC package reliability testing are reviewed briefly, and the application of transient thermal analysis is examined in great depth. For the design of light sources based on light emitting diode （LED） eff...Practices of IC package reliability testing are reviewed briefly, and the application of transient thermal analysis is examined in great depth. For the design of light sources based on light emitting diode （LED） efficient and accurate reliability testing is required to realize the potential lifetimes of 105 h. Transient thermal analysis is a standard method to determine the transient thermal impedance of semiconductor devices, e.g. power electronics and LEDs. The temperature of the semiconductor junctions is assessed by time-resolved measurement of their forward voltage （Vf）. The thermal path in the IC package is resolved by the transient technique in the time domain. This enables analyzing the structural integrity of the semiconductor package. However, to evaluate thermal resistance, one must also measure the dissipated energy of the device （i.e., the thermal load） and the k-factor. This is time consuming, and measurement errors reduce the accuracy. To overcome these limitations, an innovative approach, the relative thermal resistance method, was developed to reduce the measurement effort, increase accuracy and enable automatic data evaluation. This new way of evaluating data simplifies the thermal transient analysis by eliminating measurement of the k-factor and thermal load, i.e. measurement of the lumen flux for LEDs, by normalizing the transient Vf data. This is especially advantageous for reliability testing where changes in the thermal path, like cracks and delaminations, can be determined without measuring the k-factor and thermal load. Different failure modes can be separated in the time domain. The sensitivity of the method is demonstrated by its application to high- power white InGaN LEDs. For detailed analysis and identification of the failure mode of the LED packages, the transient signals are simulated by time-resolved finite element （FE） simulations. Using the new approach, the transient thermal analysis is enhanced to a powerful tool for reliability investigation of semiconductor packages in accelerated lifetime tests and for inline inspection. This enables automatic data analysis of the transient thermal data required for processing a large amount of data in production and reliability testing. Based on the method, the integrity of LED packages can be tested by inline, outgoing inspection and the lifetime prediction of the products is improved.展开更多
基金supported by the"973"National Basic Research Program G2000028201
文摘The decays of transient photoconductivity and their light-induced changes of polymorphous silicon (pm-Si:H) films were investigated. The decays can be fit fairly well by a sum of two exponential decay functions, which indicates that there are two kinds of traps contributing to the process. The light-induced changes of the concentration and energy level of the traps were estimated. The results show that the light-induced changes in trap energy position Et, trap concentration Nt as well as photoconductivity are markedly less for pm-Si:H than that for a-Si:H.
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 20973050 and 10904023)
文摘Experiments on fs laser-induced transient grating （LITG） in carbon bisulfide （CS2） are carried out to explore the chirp characteristics of a white-light supercontinuum （SC） generated by a 800-nm, 160-fs laser pulse in a 4-mm thick Al2O3 crystal. Two orders of diffraction signals of SC by fs LITG in CS2 are observed, demonstrating that both the third-order process and the fifth-order process are present simultaneously. The experimental results also imply that the formation of an fs transient refractive-index grating in CS2 is mainly due to the electronic polarization process.
文摘Practices of IC package reliability testing are reviewed briefly, and the application of transient thermal analysis is examined in great depth. For the design of light sources based on light emitting diode （LED） efficient and accurate reliability testing is required to realize the potential lifetimes of 105 h. Transient thermal analysis is a standard method to determine the transient thermal impedance of semiconductor devices, e.g. power electronics and LEDs. The temperature of the semiconductor junctions is assessed by time-resolved measurement of their forward voltage （Vf）. The thermal path in the IC package is resolved by the transient technique in the time domain. This enables analyzing the structural integrity of the semiconductor package. However, to evaluate thermal resistance, one must also measure the dissipated energy of the device （i.e., the thermal load） and the k-factor. This is time consuming, and measurement errors reduce the accuracy. To overcome these limitations, an innovative approach, the relative thermal resistance method, was developed to reduce the measurement effort, increase accuracy and enable automatic data evaluation. This new way of evaluating data simplifies the thermal transient analysis by eliminating measurement of the k-factor and thermal load, i.e. measurement of the lumen flux for LEDs, by normalizing the transient Vf data. This is especially advantageous for reliability testing where changes in the thermal path, like cracks and delaminations, can be determined without measuring the k-factor and thermal load. Different failure modes can be separated in the time domain. The sensitivity of the method is demonstrated by its application to high- power white InGaN LEDs. For detailed analysis and identification of the failure mode of the LED packages, the transient signals are simulated by time-resolved finite element （FE） simulations. Using the new approach, the transient thermal analysis is enhanced to a powerful tool for reliability investigation of semiconductor packages in accelerated lifetime tests and for inline inspection. This enables automatic data analysis of the transient thermal data required for processing a large amount of data in production and reliability testing. Based on the method, the integrity of LED packages can be tested by inline, outgoing inspection and the lifetime prediction of the products is improved.
