After the electron transfers from the metal electrode to the Fe3+(H2O)(6) ion, the free energy of activation of this electron transfer reaction is calculated, then using the transition probability which is calculated ...After the electron transfers from the metal electrode to the Fe3+(H2O)(6) ion, the free energy of activation of this electron transfer reaction is calculated, then using the transition probability which is calculated by the perturbed degeneration theory and the Fermi golden rule,, the rate constant is gotten. Compared with the experimental results, it is satisfactory.展开更多
With the explosive exploration of two-dimensional(2D)semiconductors for device applications,ensuring effective electrical contacts has become critical for optimizing device performance.Here,we demonstrate a universal ...With the explosive exploration of two-dimensional(2D)semiconductors for device applications,ensuring effective electrical contacts has become critical for optimizing device performance.Here,we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO_(2)/Si substrate,which can be easily transferred onto 2D semiconductors to form van der Waals(vdW)contacts.In this method,polymethyl methacrylate(PMMA)serves both as an electron resist for electrode patterning and as a sacrificial layer.Contacted with our transferred electrodes,MoS2exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions,while In Se shows pronounced ambipolarity.Additionally,usingα-In2Se3as an example,we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors.Finally,the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.展开更多
Metal–semiconductor contacts are crucial components in semiconductor devices.Ultrathin two-dimensional transition-metal dichalcogenide semiconductors can sustain transistor scaling for next-generation integrated circ...Metal–semiconductor contacts are crucial components in semiconductor devices.Ultrathin two-dimensional transition-metal dichalcogenide semiconductors can sustain transistor scaling for next-generation integrated circuits.However,their performance is often degraded by conventional metal deposition,which results in a high barrier due to chemical disorder and Fermi-level pinning(FLP).Although,transferring electrodes can address these issues,they are limited in achieving universal transfer of full-class metals due to strong adhesion between pre-deposited metals and substrates.Here,we propose a nanobelt-assisted transfer strategy that can avoid the adhesion limitation and enables the universal transfer of over 20 different types of electrodes.Our contacts obey the Schottky–Mott rule and exhibit a FLP of S=0.99.Both the electron and hole contacts show record-low Schottky barriers of 4.2 and 11.2 meV,respectively.As a demonstration,we construct a doping-free WSe_(2) inverter with these high-performance contacts,which exhibits a static power consumption of only 58 pW.This strategy provides a universal method of electrode preparation for building high-performance post-Moore electronic devices.展开更多
In the light of the scaling limitations of conventional CMOS technology,twodimensional(2D)materials offer a transformative avenue for advancing Moore's law in the post‐Moore era.The technology for transferring 2D...In the light of the scaling limitations of conventional CMOS technology,twodimensional(2D)materials offer a transformative avenue for advancing Moore's law in the post‐Moore era.The technology for transferring 2D materials serves as a crucial link between their synthesis and device integration.This review provides a comprehensive assessment of advancements in the transfer technologies and integration of 2D materials,which are essential for next‐generation electronics.Firstly,state‐of‐the‐art methodologies for highquality,wafer‐scale transfer of 2D materials,including both wet and dry transfer methods are thoroughly reviewed.And the requirements for massive transfer of 2D materials compatible with silicon line while preserving their intrinsic properties are disscussed.Next,we focus on 2D integration techniques,paying special attention to the construction of van der Waals contacts at the 2D material/dielectric interface and 2D material/metal electrode interface.Finally,the potential for layer‐by‐layer or tier‐by‐tier transfer 2D devices for monolithic 3D integration was also discussed.This review concludes by highlighting the significant challenges that remain in leveraging the potential of 2D materials at the circuit and system levels,proposing forward‐looking development in transfer strategies.展开更多
文摘After the electron transfers from the metal electrode to the Fe3+(H2O)(6) ion, the free energy of activation of this electron transfer reaction is calculated, then using the transition probability which is calculated by the perturbed degeneration theory and the Fermi golden rule,, the rate constant is gotten. Compared with the experimental results, it is satisfactory.
基金supported by the National Key Research&Development Project of China(Grant No.2022YFA1204100)the National Natural Science Foundation of China(Grant No.62488201)+4 种基金Strategic Priority Research Program of Chinese Academy of Sciences(CAS,Grant Nos.XDB30000000 and XDB28000000)CAS Project for Young Scientists in Basic Research(Grant No.YSBR-003)the Innovation Program of Quantum Science and Technology(Grant No.2021ZD0302700)Beijing Outstanding Young Scientist Program(Grant No.BJJWZYJH01201914430039)support from the Electron Microscopy Center at the University of Chinese Academy of Sciences。
文摘With the explosive exploration of two-dimensional(2D)semiconductors for device applications,ensuring effective electrical contacts has become critical for optimizing device performance.Here,we demonstrate a universal resist-assisted metal transfer method for creating nearly free-standing metal electrodes on the SiO_(2)/Si substrate,which can be easily transferred onto 2D semiconductors to form van der Waals(vdW)contacts.In this method,polymethyl methacrylate(PMMA)serves both as an electron resist for electrode patterning and as a sacrificial layer.Contacted with our transferred electrodes,MoS2exhibits tunable Schottky barrier heights and a transition from n-type dominated to ambipolar conduction with increasing metal work functions,while In Se shows pronounced ambipolarity.Additionally,usingα-In2Se3as an example,we demonstrate that our transferred electrodes enhance resistance switching in ferroelectric memristors.Finally,the universality of our method is evidenced by the successful transfer of various metals with different adhesion forces and complex patterns.
基金National Natural Science Foundation ofChina,Grant/Award Numbers:51991340,51991342,52225206,92163205,52188101,62322402,62204012,52250398,51972022,52303362,62304019the National KeyResearch and Development Program of China,Grant/Award Numbers:2022YFA1203800,2022YFA1203803,2018YFA0703503,2023YFF1500400,2023YFF1500401+7 种基金the Overseas ExpertiseIntroduction Projects for DisciplineInnovation,Grant/Award Number:B14003the Frontier Cross ResearchProject of the Department of Chinese Academy of Sciences,Grant/AwardNumber:XK2023JSA001the Beijing NovaProgram,Grant/Award Numbers:20220484145,20230484478the YoungElite Scientists sponsorship program,Grant/Award Number:2022QNRC001the Fundamental Research Funds for the Central Universities,Grant/Award Number:FRF-06500207the Interdisciplinary Research Project forYoung Teachers of USTB,Grant/Award Numbers:FRF-TP-22-004C2,FRF-IDRY-21-008,FRF-TP-22-004A1,FRF-IDRY-22-016the State Key Lab for Advanced Metals and Materials,Grant/Award Number:2023-Z05the Special supportfrom the Postdoctoral Science Foundation,Grant/Award Number:8206400173。
文摘Metal–semiconductor contacts are crucial components in semiconductor devices.Ultrathin two-dimensional transition-metal dichalcogenide semiconductors can sustain transistor scaling for next-generation integrated circuits.However,their performance is often degraded by conventional metal deposition,which results in a high barrier due to chemical disorder and Fermi-level pinning(FLP).Although,transferring electrodes can address these issues,they are limited in achieving universal transfer of full-class metals due to strong adhesion between pre-deposited metals and substrates.Here,we propose a nanobelt-assisted transfer strategy that can avoid the adhesion limitation and enables the universal transfer of over 20 different types of electrodes.Our contacts obey the Schottky–Mott rule and exhibit a FLP of S=0.99.Both the electron and hole contacts show record-low Schottky barriers of 4.2 and 11.2 meV,respectively.As a demonstration,we construct a doping-free WSe_(2) inverter with these high-performance contacts,which exhibits a static power consumption of only 58 pW.This strategy provides a universal method of electrode preparation for building high-performance post-Moore electronic devices.
基金State Key Research and Development Program of China,Grant/Award Number:2022YFB3603902National Natural Science Foundation of China,Grant/Award Number:62004042。
文摘In the light of the scaling limitations of conventional CMOS technology,twodimensional(2D)materials offer a transformative avenue for advancing Moore's law in the post‐Moore era.The technology for transferring 2D materials serves as a crucial link between their synthesis and device integration.This review provides a comprehensive assessment of advancements in the transfer technologies and integration of 2D materials,which are essential for next‐generation electronics.Firstly,state‐of‐the‐art methodologies for highquality,wafer‐scale transfer of 2D materials,including both wet and dry transfer methods are thoroughly reviewed.And the requirements for massive transfer of 2D materials compatible with silicon line while preserving their intrinsic properties are disscussed.Next,we focus on 2D integration techniques,paying special attention to the construction of van der Waals contacts at the 2D material/dielectric interface and 2D material/metal electrode interface.Finally,the potential for layer‐by‐layer or tier‐by‐tier transfer 2D devices for monolithic 3D integration was also discussed.This review concludes by highlighting the significant challenges that remain in leveraging the potential of 2D materials at the circuit and system levels,proposing forward‐looking development in transfer strategies.
