Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circ...Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circuits.Although MRAM has achieved mass production,its manufacturing process still remains challenging,resulting in only a few semiconductor companies dominating its production.In this review,we delve into the materials,processes,and devices used in MRAM,focusing on both the widely adopted spin transfer torque MRAM and the next-generation spin-orbit torque MRAM.We provide an overview of their operational mechanisms and manufacturing technologies.Furthermore,we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail.Then,the applications of MRAM in artificial intelligent hardware are introduced.Finally,we present an outlook on the future development and applications of MRAM.展开更多
We have investigated the performance of a spin transfer torque random access memory （STT-RAM） cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer...We have investigated the performance of a spin transfer torque random access memory （STT-RAM） cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density （to switch the magnetization of the free layer of the STT RAM cell） is reduced.展开更多
基金supported in part by the Youth Innovation Promotion Association of Chinese Academy of Sciences(CAS)under Grant 2020118Beijing Nova Program under Grant 20230484358Beijing Superstring Academy of Memory Technology:under Grant No.E2DF06X003。
文摘Magnetoresistive random access memory(MRAM)is a promising non-volatile memory technology that can be utilized as an energy and space-efficient storage and computing solution,particularly in cache functions within circuits.Although MRAM has achieved mass production,its manufacturing process still remains challenging,resulting in only a few semiconductor companies dominating its production.In this review,we delve into the materials,processes,and devices used in MRAM,focusing on both the widely adopted spin transfer torque MRAM and the next-generation spin-orbit torque MRAM.We provide an overview of their operational mechanisms and manufacturing technologies.Furthermore,we outline the major hurdles faced in MRAM manufacturing and propose potential solutions in detail.Then,the applications of MRAM in artificial intelligent hardware are introduced.Finally,we present an outlook on the future development and applications of MRAM.
文摘We have investigated the performance of a spin transfer torque random access memory （STT-RAM） cell with a cross shaped Heusler compound based free layer using micromagnetic simulations. We have designed a free layer using a Cobalt based Heusler compound. Simulation results clearly show that the switching time from one state to the other state has been reduced, also it has been found that the critical switching current density （to switch the magnetization of the free layer of the STT RAM cell） is reduced.
