In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector u...In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%. On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.展开更多
The combining microelectronic devices and associated technologies onto a single silicon chip poses a substantial challenge.However,in recent years,the area of silicon photonics has experienced remarkable advancements ...The combining microelectronic devices and associated technologies onto a single silicon chip poses a substantial challenge.However,in recent years,the area of silicon photonics has experienced remarkable advancements and notable leaps in performance.The performance of silicon on insulator(SOI)based photonic devices,such as fast silicon optical modulators,photonic transceivers,optical filters,etc.,have been discussed.This would be a step forward in creating standalone silicon photonic devices,strengthening the possibility of single on-chip nanophotonic integrated circuits.Suppose an integrated silicon photonic chip is designed and fabricated.In that case,it might drastically modify these combined photonic component costs,power consumption,and size,bringing substantial,perhaps revolutionary,changes to the next-generation communications sector.Yet,the monolithic integration of photonic and electrical circuitry is a significant technological difficulty.A complicated set of factors must be carefully considered to determine which application will have the best chance of success employing silicon-based integrated product solutions.The processing limitations connected to the current process flow,the process generation(sometimes referred to as lithography node generation),and packaging requirements are a few of these factors to consider.This review highlights recent developments in integrated silicon photonic devices and their proven applications,including but not limited to photonic waveguides,photonic amplifiers and filters,onchip photonic transceivers,and the state-of-the-art of silicon photonic in multidimensional quantum systems.The investigated devices aim to expedite the transfer of silicon photonics from academia to industry by opening the next phase in on-chip silicon photonics and enabling the application of silicon photonic-based devices in various optical systems.展开更多
Integrated Sensing And Communication(ISAC)is regarded as a promising technology for facilitating the rapid advancement of Sixth-Generation(6G)due to its concurrent transmission of information and environmental sensing...Integrated Sensing And Communication(ISAC)is regarded as a promising technology for facilitating the rapid advancement of Sixth-Generation(6G)due to its concurrent transmission of information and environmental sensing capabilities.Rate-Splitting Multiple Access(RSMA),through the utilization of Successive Interference Cancellation(SIC)and Rate-Splitting(RS)at the transceiver,can fulfill the sensing requirement and supersede individual radar sequence to mitigate the interference between communication and sensing.This paper investigates the transceiver design of the RSMA-assisted ISAC in a Network-Assisted Full-Duplex(NAFD)cell-free Massive Multiple-Input Multiple-Output(mMIMO)system.We first derive the expressions of the communication achievable data rate and radar sensing Signal to Interference plus Noise Ratio(SINR).Subsequently,an optimization problem is formulated to maximize the communication achievable data rate,subject to both radar sensing constraints and fronthaul constraints,an effective algorithm based on sparse beamforming scheme and Semi-Definite Relaxation(SDR)is then proposed to acquire the near-optimal transceiver.Numerical results demonstrate that the application of RSMA technology in ISAC systems can significantly enhance system performance,and reveal that Dual-Functionalities Radar-Communication(DFRC)scheme can achieve higher data rate than the traditional scheme.展开更多
A monolithic integration of the light emitting diode(LED)and photodetector(PD)based onⅢ-nitride is designed and fabricated on a sapphire substrate to act as a transceiver.Due to the coexistence of light emission and ...A monolithic integration of the light emitting diode(LED)and photodetector(PD)based onⅢ-nitride is designed and fabricated on a sapphire substrate to act as a transceiver.Due to the coexistence of light emission and detection phenomenon of the multi-quantum well(MQW)structure,the monolithic transceiver can effectively sense environmental changes.By integrating a deformable Polydimethylsiloxane(PDMS)film on the transceiver chip,external force variation can be effectively detected.As the thickness of the PDMS reduces,the sensitivity significantly improves but at the expense of the measuring range.A sensitivity of 2.9683%per newton for a range of 0-11 N is obtained when a 2 mm-thick PDMS film is packaged.The proposed monolithic GaN transceiver-based sensing system has the advantages of compactness,low cost,and simple assembly,providing an optional method for practical applications.展开更多
To improve the quality of the illumination distribution,one novel indoor visible light communication(VLC)system,which is jointly assisted by the angle-diversity transceivers and simultaneous transmission and reflectio...To improve the quality of the illumination distribution,one novel indoor visible light communication(VLC)system,which is jointly assisted by the angle-diversity transceivers and simultaneous transmission and reflection-intelligent reflecting surface(STAR-IRS),has been proposed in this work.A Harris Hawks optimizer algorithm(HHOA)-based two-stage alternating iteration algorithm(TSAIA)is presented to jointly optimize the magnitude and uniformity of the received optical power.Besides,to demonstrate the superiority of the proposed strategy,several benchmark schemes are simulated and compared.Results showed that compared to other optimization strategies,the TSAIA scheme is more capable of balancing the average value and variance of the received optical power,when the maximal ratio combining(MRC)strategy is adopted at the receiver.Moreover,as the number of the STAR-IRS elements increases,the optical power variance of the system optimized by TSAIA scheme would become smaller while the average optical power would get larger.This study will benefit the design of received optical power distribution for indoor VLC systems.展开更多
With the explosive development of artificial intelligence(AI),machine learning(ML),and high-performance comput-ing(HPC),the ever-growing data movement is asking for high density interconnects with higher bandwidth(BW)...With the explosive development of artificial intelligence(AI),machine learning(ML),and high-performance comput-ing(HPC),the ever-growing data movement is asking for high density interconnects with higher bandwidth(BW),lower power and lower latency[1−3].The optical I/O leverages silicon photonic(SiPh)technology to enable high-density large-scale integrated photonics.展开更多
A 28/56 Gb/s NRZ/PAM-4 dual-mode transceiver(TRx)designed in a 28-nm complementary metal-oxide-semiconduc-tor(CMOS)process is presented in this article.A voltage-mode(VM)driver featuring a 4-tap reconfigurable feed-fo...A 28/56 Gb/s NRZ/PAM-4 dual-mode transceiver(TRx)designed in a 28-nm complementary metal-oxide-semiconduc-tor(CMOS)process is presented in this article.A voltage-mode(VM)driver featuring a 4-tap reconfigurable feed-forward equal-izer(FFE)is employed in the quarter-rate transmitter(TX).The half-rate receiver(RX)incorporates a continuous-time linear equal-izer(CTLE),a 3-stage high-speed slicer with multi-clock-phase sampling,and a clock and data recovery(CDR).The experimen-tal results show that the TRx operates at a maximum speed of 56 Gb/s with chip-on board(COB)assembly.The 28 Gb/s NRZ eye diagram shows a far-end vertical eye opening of 210 mV with an output amplitude of 351 mV single-ended and the 56 Gb/s PAM-4 eye diagram exhibits far-end eye opening of 33 mV(upper-eye),31 mV(mid-eye),and 28 mV(lower-eye)with an output amplitude of 353 mV single-ended.The recovered 14 GHz clock from the RX exhibits random jitter(RJ)of 469 fs and deterministic jitter(DJ)of 8.76 ps.The 875 Mb/s de-multiplexed data features 593 ps horizontal eye opening with 32.02 ps RJ,at bit-error rate(BER)of 10-5(0.53 UI).The power dissipation of TX and RX are 125 and 181.4 mW,respectively,from a 0.9-V sup-ply.展开更多
This article presents an 8-element dual-polarized phased-array transceiver(TRX)front-end IC for millimeter-wave(mm-Wave)5G new radio(NR).Power enhancement technologies for power amplifiers(PA)in mm-Wave 5G phased-arra...This article presents an 8-element dual-polarized phased-array transceiver(TRX)front-end IC for millimeter-wave(mm-Wave)5G new radio(NR).Power enhancement technologies for power amplifiers(PA)in mm-Wave 5G phased-array TRX are discussed.A four-stage wideband high-power class-AB PA with distributed-active-transformer(DAT)power combining and multi-stage second-harmonic traps is proposed,ensuring the mitigated amplitude-to-phase(AM-PM)distortions across wide carrier frequencies without degrading transmitting(TX)power,gain and efficiency.TX and receiving(RX)switching is achieved by a matching network co-designed on-chip T/R switch.In each TRX element,6-bit 360°phase shifting and 6-bit 31.5-dB gain tuning are respectively achieved by the digital-controlled vector-modulated phase shifter(VMPS)and differential attenuator(ATT).Fabricated in 65-nm bulk complementary metal oxide semiconductor(CMOS),the proposed TRX demonstrates the measured peak TX/RX gains of 25.5/21.3 dB,covering the 24−29.5 GHz band.The measured peak TX OP1dB and power-added efficiency(PAE)are 20.8 dBm and 21.1%,respectively.The measured minimum RX NF is 4.1 dB.The TRX achieves an output power of 11.0−12.4 dBm and error vector magnitude(EVM)of 5%with 400-MHz 5G NR FR2 OFDM 64-QAM signals across 24−29.5 GHz,covering 3GPP 5G NR FR2 operating bands of n257,n258,and n261.展开更多
The in-band full-duplex(IBFD)wireless system is a promising candidate for 6G and beyond,as it can double data throughput and enormously lower transmission latency by supporting simultaneous in-band transmission and re...The in-band full-duplex(IBFD)wireless system is a promising candidate for 6G and beyond,as it can double data throughput and enormously lower transmission latency by supporting simultaneous in-band transmission and reception of signals.Enabling IBFD systems requires a substantial mitigation of a transmitter(Tx)’s strong self-interference(SI)signal into the receiver(Rx)channel.However,current state-ofthe-art approaches to tackle this challenge are inefficient in terms of performance,cost,and complexity,hindering the commercialization of IBFD techniques.In this work,we devise and demonstrate an innovative approach to realize IBFD systems that exhibit superior performance with a low-cost and lesscomplex architecture in an all-passive module.Our scheme is based on meticulously combining polarization-division multiplexing(PDM)with ferromagnetic nonreciprocity to achieve ultra-high isolation between Tx and Rx channels.Such an unprecedented conception has become feasible thanks to a concurrent dual-mode circulator—a new component introduced for the first time—as a key feature of our module,and a dual-mode waveguide that transforms two orthogonally polarized waves into two orthogonal waveguide modes.In addition,we propose a unique passive tunable secondary SI cancellation(SIC)mechanism,which is embedded within the proposed module and boosts the isolation over a relatively broad bandwidth.We report,solely in the analog domain,experimental isolation levels of 50,70,and 80 dB over 340,101,and 33 MHz bandwidth at the center frequency of interest,respectively,with excellent tuning capability.Furthermore,the module is tested in two real IBFD scenarios to assess its performance in connection with Tx-to-Rx leakage and modulation error in the presence of a Tx’s strong interference signal.展开更多
The development of a high performance wideband radio frequency （RF） transceiver used in the next generation mobile communication system is presented. The developed RF transceiver operates in the 6 to 6.3 GHz band an...The development of a high performance wideband radio frequency （RF） transceiver used in the next generation mobile communication system is presented. The developed RF transceiver operates in the 6 to 6.3 GHz band and the channel bandwidth is up to 100 MHz. It operates in the time division duplex （TDD） mode and supports the multiple-input multipleoutput （MIMO） technique for the international mobile telecommunications （IMT）-advanced systems. The classical superheterodyne scheme is employed to achieve optimal performance. Design issues of the essential components such as low noise amplifier, power amplifier and local oscillators are described in detail. Measurement results show that the maximum linear output power of the RF transceiver is above 23 dBm, and the gain and noise figure of the low noise amplifier is around 24 dB and below 1 dB, respectively. Furthermore, the error vector magnitude （EVM） measurement shows that the performance of the developed RF transceiver is well beyond the requirements of the long term evolution （LTE）-advanced system. With up to 8 x 8 MIMO configuration, the RF transceiver supports more than a 1 Gbit/s data rate in field tests.展开更多
This paper introduces a novel digital transceiver for the cordless telephone zero （CT0） standard,which uses a digital modulation and demodulation technique to handle the signal instead of the traditional analog meth...This paper introduces a novel digital transceiver for the cordless telephone zero （CT0） standard,which uses a digital modulation and demodulation technique to handle the signal instead of the traditional analog meth-od. In the transmitter,a fractional-N phase locked loop （PLL） is utilized to realize the continuous phase frequency shift key （CPFSK） modulation,and a 2 Ts raised cosine （2RC） shaping technique is used to reduce the occupied bandwidth. In the receiver,a novel digital method is proposed to demodulate the 2RC CPFSK signal. This chip is fabricated using an SMIC 0.35μm mixed signal CMOS process with a die size of 2mm × 2mm. With an external low noise amplifier （LNA）,the sensitivity of the chip is better than -103dBm.展开更多
Based on the analyses of the reported Gilbert mixers operating at low supply vol tage,a down-conversion mixer and an up-conversion mixer for 2.4GHz bluetooth transceiver are presented with the modified low voltage de...Based on the analyses of the reported Gilbert mixers operating at low supply vol tage,a down-conversion mixer and an up-conversion mixer for 2.4GHz bluetooth transceiver are presented with the modified low voltage design techniques,respe ctively.Feedback and current mirror techniques suitable for low voltage operatio n are used to improve the linearity of the up-conversion mixer,and folded-casc ode output stage is adopted to optimize the noise and conversion gain of the dow n-conversion mixer operating at low voltage.Based on 0.35μm CMOS technology,s imulations are performed with 2V supply voltage.The results show that 20dBm thir d-order intercept point (IIP3),87mV output signal amplitude are achieved for up -conversion mixer with about 3mA current;while 20dB conversion gain (CG),6.5nV /Hz input-referred noise,4.4dBm IIP3 are obtained for down-conversion mixer with about 3.5mA current.展开更多
A down-conversion mixer and an up-conversion mixer for 2.4GHz WLAN transceivers are presented.The down-conversion mixer uses a class-AB input stage to get high linearity and to realize input impedance matching and sin...A down-conversion mixer and an up-conversion mixer for 2.4GHz WLAN transceivers are presented.The down-conversion mixer uses a class-AB input stage to get high linearity and to realize input impedance matching and single-ended to differential conversion.The mixers are implemented in 0.18μm CMOS process.The measured results are given to show their performance.展开更多
A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is dis...A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is discussed from the aspects of noise optimization,impedance match,and forward gain.At 2.05GHz,the measured S 11 is -6.4dB, S 21 is 11dB with 3dB-BW of 300MHz,and NF is about 5.3dB.It indicates that comprehensive consideration of parasitics,package model,and reasonable process is necessary for RF circuit design.展开更多
An integrated low power CMOS VCO and its divide by 2 dividers for WLAN transceivers are presented.The VCO is based on on chip symmetrical spiral inductor and differential diode and the divide by 2 dividers are b...An integrated low power CMOS VCO and its divide by 2 dividers for WLAN transceivers are presented.The VCO is based on on chip symmetrical spiral inductor and differential diode and the divide by 2 dividers are based on the ILFD technique.Due to differential LC tanks and ILFD techniques,power consumption is low.The circuit is implemented in a 0 18μm CMOS process.Measurements show the proposed circuit could produce 3 6/1 8GHz dual band LO signals with a wide tuning range and low phase noise.1 8GHz LO signals are quadrature.It consumes 5mA at V DD =1 5V.The size of die area is only 1 0mm×1 0mm.展开更多
A monolithic LC-tuned voltage controlled oscillator （LC-VCO） with 2 tuning terminals is designed for a dual frequency conversion transceiver for WLAN and realized using 0.18μm radio frequency （RF） CMOS technology...A monolithic LC-tuned voltage controlled oscillator （LC-VCO） with 2 tuning terminals is designed for a dual frequency conversion transceiver for WLAN and realized using 0.18μm radio frequency （RF） CMOS technology. The output frequency range can be tuned to cover the defined frequency band of the transceiver. The maximum tuning range is 500MHz. The phase noises are - 117dBc/Hz at 4MHz and - 107dBc/Hz at 500kHz,both off the center frequency of 4. 189GHz. The RMS-jitter of the output signal is 4. 423ps,and the output power is - 8. 68dBm.展开更多
A 2. 4GHz CMOS monolithic transceiver front-end for IEEE 802. llb wireless LAN applications is presented. The receiver and transmitter are both of superheterodyne structure for good system performance. The frontend co...A 2. 4GHz CMOS monolithic transceiver front-end for IEEE 802. llb wireless LAN applications is presented. The receiver and transmitter are both of superheterodyne structure for good system performance. The frontend consists of five blocks., low noise amplifier,down-converter, up-converter, pre-amplifier, and LO buffer. Their input/output impedance are all on-chip matched to 50 Ω except the down-converter which has open-drain outputs. The transceiver RF front-end has been implemented in a 0. 18μm CMOS process. When the LNA and the down-converter are directly connected, the measured noise figure is 5.2dB, the measured available power gain 12. 5dB, the input l dB compression point --18dBm,and the third-order input intercept point --7dBm. The receiver front-end draws 13.6mA currents from the 1.8V power supply. When the up-converter and pre-amplifier are directly connected, the measured noise figure is 12.4dB, the power gain is 23. 8dB, the output ldB compression point is 1.5dBm, and the third-order output intercept point is 16dBm. The transmitter consumes 27.6mA current from the 1.8V power supply.展开更多
Diamond based quantum sensing is a fast-emerging field with both scientific and technological significance.The nitrogen–vacancy(NV)center,a crystal defect in diamond,has become a unique object for microwave sensing a...Diamond based quantum sensing is a fast-emerging field with both scientific and technological significance.The nitrogen–vacancy(NV)center,a crystal defect in diamond,has become a unique object for microwave sensing applications due to its excellent stability,long spin coherence time,and optical properties at ambient condition.In this work,we use diamond NV center as atomic receiver to demodulate on–off keying(OOK)signal transmitted in broad frequency range(2 GHz–14 GHz in a portable benchtop setup).We proposed a unique algorithm of voltage discrimination and demonstrated audio signal transceiving with fidelity above 99%.This diamond receiver is attached to the end of a tapered fiber,having all optic nature,which will find important applications in data transmission tasks under extreme conditions such as strong electromagnetic interference,high temperatures,and high corrosion.展开更多
基金supported by the Fund of State Key Laboratory of Information Photonics and Optical Communications(No.IPOC2016ZT10)the National Natural Science Foundation of China(Nos.61574019,61674020,and 61674018)+1 种基金the Specialized Research Fund for the Doctoral Program of Higher Education of China(No.20130005130001)the 111 Project(No.B07005)
文摘In this Letter, a pair of integrated optoelectronic transceiving chips is proposed. They are constructed by integrating a vertical cavity surface emitting laser unit above a positive-intrinsic-negative photodetector unit. One of the transceiving chips emits light at the wavelength of 848.1 nm with a threshold current of 0.8 mA and a slope efficiency of 0.81 W/A. It receives light between 801 and 814 nm with a quantum efficiency of higher than 70%. On its counterpart, the other one of the transceiving chips emits light at the wavelength of 805.3 nm with a threshold current of 1.1 mA and a slope efficiency of 0.86 W/A. It receives light between 838 and 855 nm with a quantum efficiency of higher than 70%. The proposed pair of integrated optoelectronic transceiving chips can work full-duplex with each other, and they can be applied to single fiber bidirectional optical interconnects.
文摘The combining microelectronic devices and associated technologies onto a single silicon chip poses a substantial challenge.However,in recent years,the area of silicon photonics has experienced remarkable advancements and notable leaps in performance.The performance of silicon on insulator(SOI)based photonic devices,such as fast silicon optical modulators,photonic transceivers,optical filters,etc.,have been discussed.This would be a step forward in creating standalone silicon photonic devices,strengthening the possibility of single on-chip nanophotonic integrated circuits.Suppose an integrated silicon photonic chip is designed and fabricated.In that case,it might drastically modify these combined photonic component costs,power consumption,and size,bringing substantial,perhaps revolutionary,changes to the next-generation communications sector.Yet,the monolithic integration of photonic and electrical circuitry is a significant technological difficulty.A complicated set of factors must be carefully considered to determine which application will have the best chance of success employing silicon-based integrated product solutions.The processing limitations connected to the current process flow,the process generation(sometimes referred to as lithography node generation),and packaging requirements are a few of these factors to consider.This review highlights recent developments in integrated silicon photonic devices and their proven applications,including but not limited to photonic waveguides,photonic amplifiers and filters,onchip photonic transceivers,and the state-of-the-art of silicon photonic in multidimensional quantum systems.The investigated devices aim to expedite the transfer of silicon photonics from academia to industry by opening the next phase in on-chip silicon photonics and enabling the application of silicon photonic-based devices in various optical systems.
基金supported by the National Natural Science Foundation of China under Grant 62171126.
文摘Integrated Sensing And Communication(ISAC)is regarded as a promising technology for facilitating the rapid advancement of Sixth-Generation(6G)due to its concurrent transmission of information and environmental sensing capabilities.Rate-Splitting Multiple Access(RSMA),through the utilization of Successive Interference Cancellation(SIC)and Rate-Splitting(RS)at the transceiver,can fulfill the sensing requirement and supersede individual radar sequence to mitigate the interference between communication and sensing.This paper investigates the transceiver design of the RSMA-assisted ISAC in a Network-Assisted Full-Duplex(NAFD)cell-free Massive Multiple-Input Multiple-Output(mMIMO)system.We first derive the expressions of the communication achievable data rate and radar sensing Signal to Interference plus Noise Ratio(SINR).Subsequently,an optimization problem is formulated to maximize the communication achievable data rate,subject to both radar sensing constraints and fronthaul constraints,an effective algorithm based on sparse beamforming scheme and Semi-Definite Relaxation(SDR)is then proposed to acquire the near-optimal transceiver.Numerical results demonstrate that the application of RSMA technology in ISAC systems can significantly enhance system performance,and reveal that Dual-Functionalities Radar-Communication(DFRC)scheme can achieve higher data rate than the traditional scheme.
基金supported by the National Key Research and Development Program under Grant No.2024YFE0204700Natural Science Foundation of Jiangsu Province under Grant No.BG2024023Higher Education Discipline Innovation Project under Grant No.D17018。
文摘A monolithic integration of the light emitting diode(LED)and photodetector(PD)based onⅢ-nitride is designed and fabricated on a sapphire substrate to act as a transceiver.Due to the coexistence of light emission and detection phenomenon of the multi-quantum well(MQW)structure,the monolithic transceiver can effectively sense environmental changes.By integrating a deformable Polydimethylsiloxane(PDMS)film on the transceiver chip,external force variation can be effectively detected.As the thickness of the PDMS reduces,the sensitivity significantly improves but at the expense of the measuring range.A sensitivity of 2.9683%per newton for a range of 0-11 N is obtained when a 2 mm-thick PDMS film is packaged.The proposed monolithic GaN transceiver-based sensing system has the advantages of compactness,low cost,and simple assembly,providing an optional method for practical applications.
基金supported by the National Natural Science Foundation of China(No.62071365)the Key Research and Development Program of Shaanxi Province(No.2017ZDCXL-GY-06-02).
文摘To improve the quality of the illumination distribution,one novel indoor visible light communication(VLC)system,which is jointly assisted by the angle-diversity transceivers and simultaneous transmission and reflection-intelligent reflecting surface(STAR-IRS),has been proposed in this work.A Harris Hawks optimizer algorithm(HHOA)-based two-stage alternating iteration algorithm(TSAIA)is presented to jointly optimize the magnitude and uniformity of the received optical power.Besides,to demonstrate the superiority of the proposed strategy,several benchmark schemes are simulated and compared.Results showed that compared to other optimization strategies,the TSAIA scheme is more capable of balancing the average value and variance of the received optical power,when the maximal ratio combining(MRC)strategy is adopted at the receiver.Moreover,as the number of the STAR-IRS elements increases,the optical power variance of the system optimized by TSAIA scheme would become smaller while the average optical power would get larger.This study will benefit the design of received optical power distribution for indoor VLC systems.
基金This work was supported by the National Natural Science Foundation of China(Grant Nos.61925505,92373209 and 62235017).
文摘With the explosive development of artificial intelligence(AI),machine learning(ML),and high-performance comput-ing(HPC),the ever-growing data movement is asking for high density interconnects with higher bandwidth(BW),lower power and lower latency[1−3].The optical I/O leverages silicon photonic(SiPh)technology to enable high-density large-scale integrated photonics.
基金supported by National Natural Science Foundation of China under Grant 62174132the Fundamental Research Funds for Central Universities under Grant xzy022022060.
文摘A 28/56 Gb/s NRZ/PAM-4 dual-mode transceiver(TRx)designed in a 28-nm complementary metal-oxide-semiconduc-tor(CMOS)process is presented in this article.A voltage-mode(VM)driver featuring a 4-tap reconfigurable feed-forward equal-izer(FFE)is employed in the quarter-rate transmitter(TX).The half-rate receiver(RX)incorporates a continuous-time linear equal-izer(CTLE),a 3-stage high-speed slicer with multi-clock-phase sampling,and a clock and data recovery(CDR).The experimen-tal results show that the TRx operates at a maximum speed of 56 Gb/s with chip-on board(COB)assembly.The 28 Gb/s NRZ eye diagram shows a far-end vertical eye opening of 210 mV with an output amplitude of 351 mV single-ended and the 56 Gb/s PAM-4 eye diagram exhibits far-end eye opening of 33 mV(upper-eye),31 mV(mid-eye),and 28 mV(lower-eye)with an output amplitude of 353 mV single-ended.The recovered 14 GHz clock from the RX exhibits random jitter(RJ)of 469 fs and deterministic jitter(DJ)of 8.76 ps.The 875 Mb/s de-multiplexed data features 593 ps horizontal eye opening with 32.02 ps RJ,at bit-error rate(BER)of 10-5(0.53 UI).The power dissipation of TX and RX are 125 and 181.4 mW,respectively,from a 0.9-V sup-ply.
基金This work was supported in part by the National Key Research and Development Program of China under Grant 2019YFB1803000in part by the Major Key Project of Peng Cheng Laboratory,Shenzhen,China,under Project PCL2021A01-2.
文摘This article presents an 8-element dual-polarized phased-array transceiver(TRX)front-end IC for millimeter-wave(mm-Wave)5G new radio(NR).Power enhancement technologies for power amplifiers(PA)in mm-Wave 5G phased-array TRX are discussed.A four-stage wideband high-power class-AB PA with distributed-active-transformer(DAT)power combining and multi-stage second-harmonic traps is proposed,ensuring the mitigated amplitude-to-phase(AM-PM)distortions across wide carrier frequencies without degrading transmitting(TX)power,gain and efficiency.TX and receiving(RX)switching is achieved by a matching network co-designed on-chip T/R switch.In each TRX element,6-bit 360°phase shifting and 6-bit 31.5-dB gain tuning are respectively achieved by the digital-controlled vector-modulated phase shifter(VMPS)and differential attenuator(ATT).Fabricated in 65-nm bulk complementary metal oxide semiconductor(CMOS),the proposed TRX demonstrates the measured peak TX/RX gains of 25.5/21.3 dB,covering the 24−29.5 GHz band.The measured peak TX OP1dB and power-added efficiency(PAE)are 20.8 dBm and 21.1%,respectively.The measured minimum RX NF is 4.1 dB.The TRX achieves an output power of 11.0−12.4 dBm and error vector magnitude(EVM)of 5%with 400-MHz 5G NR FR2 OFDM 64-QAM signals across 24−29.5 GHz,covering 3GPP 5G NR FR2 operating bands of n257,n258,and n261.
基金supported by a Natural Sciences and Engineering Research Council(NSERC)-sponsored Industrial Research Chair program,an NSERC Discovery Grantin part by the Fonds de recherche du Québec Nature et technologies(FRQNT)Doctoral Fellowship of Amir Afshani funded by the Government of Québec Province.
文摘The in-band full-duplex(IBFD)wireless system is a promising candidate for 6G and beyond,as it can double data throughput and enormously lower transmission latency by supporting simultaneous in-band transmission and reception of signals.Enabling IBFD systems requires a substantial mitigation of a transmitter(Tx)’s strong self-interference(SI)signal into the receiver(Rx)channel.However,current state-ofthe-art approaches to tackle this challenge are inefficient in terms of performance,cost,and complexity,hindering the commercialization of IBFD techniques.In this work,we devise and demonstrate an innovative approach to realize IBFD systems that exhibit superior performance with a low-cost and lesscomplex architecture in an all-passive module.Our scheme is based on meticulously combining polarization-division multiplexing(PDM)with ferromagnetic nonreciprocity to achieve ultra-high isolation between Tx and Rx channels.Such an unprecedented conception has become feasible thanks to a concurrent dual-mode circulator—a new component introduced for the first time—as a key feature of our module,and a dual-mode waveguide that transforms two orthogonally polarized waves into two orthogonal waveguide modes.In addition,we propose a unique passive tunable secondary SI cancellation(SIC)mechanism,which is embedded within the proposed module and boosts the isolation over a relatively broad bandwidth.We report,solely in the analog domain,experimental isolation levels of 50,70,and 80 dB over 340,101,and 33 MHz bandwidth at the center frequency of interest,respectively,with excellent tuning capability.Furthermore,the module is tested in two real IBFD scenarios to assess its performance in connection with Tx-to-Rx leakage and modulation error in the presence of a Tx’s strong interference signal.
基金The National Natural Science Foundation of China (No.60702027,60921063)the National Basic Research Program of China(973 Program)(No.2010CB327400)the National Science and Technology Major Project of Ministry of Science and Technology of China(No.2010ZX03007-001-01,2011ZX03004-001)
文摘The development of a high performance wideband radio frequency （RF） transceiver used in the next generation mobile communication system is presented. The developed RF transceiver operates in the 6 to 6.3 GHz band and the channel bandwidth is up to 100 MHz. It operates in the time division duplex （TDD） mode and supports the multiple-input multipleoutput （MIMO） technique for the international mobile telecommunications （IMT）-advanced systems. The classical superheterodyne scheme is employed to achieve optimal performance. Design issues of the essential components such as low noise amplifier, power amplifier and local oscillators are described in detail. Measurement results show that the maximum linear output power of the RF transceiver is above 23 dBm, and the gain and noise figure of the low noise amplifier is around 24 dB and below 1 dB, respectively. Furthermore, the error vector magnitude （EVM） measurement shows that the performance of the developed RF transceiver is well beyond the requirements of the long term evolution （LTE）-advanced system. With up to 8 x 8 MIMO configuration, the RF transceiver supports more than a 1 Gbit/s data rate in field tests.
文摘This paper introduces a novel digital transceiver for the cordless telephone zero （CT0） standard,which uses a digital modulation and demodulation technique to handle the signal instead of the traditional analog meth-od. In the transmitter,a fractional-N phase locked loop （PLL） is utilized to realize the continuous phase frequency shift key （CPFSK） modulation,and a 2 Ts raised cosine （2RC） shaping technique is used to reduce the occupied bandwidth. In the receiver,a novel digital method is proposed to demodulate the 2RC CPFSK signal. This chip is fabricated using an SMIC 0.35μm mixed signal CMOS process with a die size of 2mm × 2mm. With an external low noise amplifier （LNA）,the sensitivity of the chip is better than -103dBm.
文摘Based on the analyses of the reported Gilbert mixers operating at low supply vol tage,a down-conversion mixer and an up-conversion mixer for 2.4GHz bluetooth transceiver are presented with the modified low voltage design techniques,respe ctively.Feedback and current mirror techniques suitable for low voltage operatio n are used to improve the linearity of the up-conversion mixer,and folded-casc ode output stage is adopted to optimize the noise and conversion gain of the dow n-conversion mixer operating at low voltage.Based on 0.35μm CMOS technology,s imulations are performed with 2V supply voltage.The results show that 20dBm thir d-order intercept point (IIP3),87mV output signal amplitude are achieved for up -conversion mixer with about 3mA current;while 20dB conversion gain (CG),6.5nV /Hz input-referred noise,4.4dBm IIP3 are obtained for down-conversion mixer with about 3.5mA current.
文摘A down-conversion mixer and an up-conversion mixer for 2.4GHz WLAN transceivers are presented.The down-conversion mixer uses a class-AB input stage to get high linearity and to realize input impedance matching and single-ended to differential conversion.The mixers are implemented in 0.18μm CMOS process.The measured results are given to show their performance.
文摘A RF low noise amplifier,integrated in a single bluetooth transceiver chip and fabricated in 0.35μm digital CMOS technology,is presented.Under the consideration of ESD protection and package,design methodology is discussed from the aspects of noise optimization,impedance match,and forward gain.At 2.05GHz,the measured S 11 is -6.4dB, S 21 is 11dB with 3dB-BW of 300MHz,and NF is about 5.3dB.It indicates that comprehensive consideration of parasitics,package model,and reasonable process is necessary for RF circuit design.
文摘An integrated low power CMOS VCO and its divide by 2 dividers for WLAN transceivers are presented.The VCO is based on on chip symmetrical spiral inductor and differential diode and the divide by 2 dividers are based on the ILFD technique.Due to differential LC tanks and ILFD techniques,power consumption is low.The circuit is implemented in a 0 18μm CMOS process.Measurements show the proposed circuit could produce 3 6/1 8GHz dual band LO signals with a wide tuning range and low phase noise.1 8GHz LO signals are quadrature.It consumes 5mA at V DD =1 5V.The size of die area is only 1 0mm×1 0mm.
文摘A monolithic LC-tuned voltage controlled oscillator （LC-VCO） with 2 tuning terminals is designed for a dual frequency conversion transceiver for WLAN and realized using 0.18μm radio frequency （RF） CMOS technology. The output frequency range can be tuned to cover the defined frequency band of the transceiver. The maximum tuning range is 500MHz. The phase noises are - 117dBc/Hz at 4MHz and - 107dBc/Hz at 500kHz,both off the center frequency of 4. 189GHz. The RMS-jitter of the output signal is 4. 423ps,and the output power is - 8. 68dBm.
文摘A 2. 4GHz CMOS monolithic transceiver front-end for IEEE 802. llb wireless LAN applications is presented. The receiver and transmitter are both of superheterodyne structure for good system performance. The frontend consists of five blocks., low noise amplifier,down-converter, up-converter, pre-amplifier, and LO buffer. Their input/output impedance are all on-chip matched to 50 Ω except the down-converter which has open-drain outputs. The transceiver RF front-end has been implemented in a 0. 18μm CMOS process. When the LNA and the down-converter are directly connected, the measured noise figure is 5.2dB, the measured available power gain 12. 5dB, the input l dB compression point --18dBm,and the third-order input intercept point --7dBm. The receiver front-end draws 13.6mA currents from the 1.8V power supply. When the up-converter and pre-amplifier are directly connected, the measured noise figure is 12.4dB, the power gain is 23. 8dB, the output ldB compression point is 1.5dBm, and the third-order output intercept point is 16dBm. The transmitter consumes 27.6mA current from the 1.8V power supply.
基金the National Key Research and Development Program of China(Grant No.2021YFB2012600)。
文摘Diamond based quantum sensing is a fast-emerging field with both scientific and technological significance.The nitrogen–vacancy(NV)center,a crystal defect in diamond,has become a unique object for microwave sensing applications due to its excellent stability,long spin coherence time,and optical properties at ambient condition.In this work,we use diamond NV center as atomic receiver to demodulate on–off keying(OOK)signal transmitted in broad frequency range(2 GHz–14 GHz in a portable benchtop setup).We proposed a unique algorithm of voltage discrimination and demonstrated audio signal transceiving with fidelity above 99%.This diamond receiver is attached to the end of a tapered fiber,having all optic nature,which will find important applications in data transmission tasks under extreme conditions such as strong electromagnetic interference,high temperatures,and high corrosion.
