A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transf...A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.展开更多
We demonstrate a fiber refractive index（RI） sensor based on an excessively tilted fiber grating（ExTFG）immobilized by large-size plasmonic gold nanoshells（GNSs）. The GNSs are covalently linked on ExTFG surface.Ex...We demonstrate a fiber refractive index（RI） sensor based on an excessively tilted fiber grating（ExTFG）immobilized by large-size plasmonic gold nanoshells（GNSs）. The GNSs are covalently linked on ExTFG surface.Experimental results demonstrate that both the intensity of the transverse magnetic（TM） and transverse electric（TE） modes of ExTFG are significantly modulated by the localized surface plasmon resonance（LSPR） of GNSs due to the wide-range absorption band. The wavelength RI sensitivities of the TM and TE modes in the low RI range of 1.333–1.379 are improved by ～25% and ～14% after GNSs immobilization, respectively, and the intensity RI sensitivities are ～599%/RIU and ～486%/RIU, respectively.展开更多
基金Supported by the Key Laboratory of Microsatellites,Chinese Academy of Sciences
文摘A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130？nm CMOS bulk Si and silicon-on-insulator （SOI） technologies. The effectiveness of linear energy transfer （LET） with a tilted ion beam at the 130？nm technology node is obtained. Tests of tilted angles θ=0 ° , 30 ° and 60 ° with respect to the normal direction are performed under heavy-ion Kr with certain power whose LET is about 40？MeVcm 2 /mg at normal incidence. Error numbers in D flip-flop chains are used to determine their upset sensitivity at different incidence angles. It is indicated that the effective LETs for SOI and bulk Si are not exactly in inverse proportion to cosθ , furthermore the effective LET for SOI is more closely in inverse proportion to cosθ compared to bulk Si, which are also the well known behavior. It is interesting that, if we design the sample in the dual interlocked storage cell approach, the effective LET in bulk Si will look like inversely proportional to cosθ very well, which is also specifically explained.
基金supported by the National Natural Science Foundation of China(Nos.61875026 and 61505017)the Foundation and Cutting-Edge Research Projects of the Chongqing Science and Technology Commission(No.cstc2018jcyjAX0122)the Graduate Student Innovation Program of the Chongqing University of Technology(No.ycx2018238)
文摘We demonstrate a fiber refractive index（RI） sensor based on an excessively tilted fiber grating（ExTFG）immobilized by large-size plasmonic gold nanoshells（GNSs）. The GNSs are covalently linked on ExTFG surface.Experimental results demonstrate that both the intensity of the transverse magnetic（TM） and transverse electric（TE） modes of ExTFG are significantly modulated by the localized surface plasmon resonance（LSPR） of GNSs due to the wide-range absorption band. The wavelength RI sensitivities of the TM and TE modes in the low RI range of 1.333–1.379 are improved by ～25% and ～14% after GNSs immobilization, respectively, and the intensity RI sensitivities are ～599%/RIU and ～486%/RIU, respectively.
