The positive gate-bias temperature instability of a radio frequency （RF） sputtered ZnO thin-film transistor （ZnO TFT） is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state cu...The positive gate-bias temperature instability of a radio frequency （RF） sputtered ZnO thin-film transistor （ZnO TFT） is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current- voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold- voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate- dielectric/channel interface.展开更多
The impact of supercritical CO2/H2O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors(MIS-HEMTs) is investigated. The MIS-HEMTs were placed i...The impact of supercritical CO2/H2O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors(MIS-HEMTs) is investigated. The MIS-HEMTs were placed in a supercritical fluid system chamber at 150℃ for 3 h. The chamber was injected with CO2 and H2O at pressure of 3000 psi(1 psi ≈ 6.895 kPa). Supercritical H2O fluid has the characteristics of liquid H2O and gaseous H2O at the same time, that is, high penetration and high solubility. In addition, OH-produced by ionization of H2O can fill the nitrogen vacancy near the Si3N4/GaN/AlGaN interface caused by high temperature process. After supercritical CO2/H2O treatment, the threshold voltage shift is reduced from 1 V to 0.3 V. The result shows that the threshold voltage shift of MIS-HEMTs could be suppressed by supercritical CO2/H2O treatment.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61076113 and 61274085)the Research Grants Council of Hong Kong,China(Grant No.7133/07E)
文摘The positive gate-bias temperature instability of a radio frequency （RF） sputtered ZnO thin-film transistor （ZnO TFT） is investigated. Under positive gate-bias stress, the saturation drain current and OFF-state current decrease, and the threshold voltage shifts toward the positive direction. The stress amplitude and stress temperature are considered as important factors in threshold-voltage instability, and the time dependences of threshold voltage shift under various bias temperature stress conditions could be described by a stretched-exponential equation. Based on the analysis of hysteresis behaviors in current- voltage and capacitance-voltage characteristics before and after the gate-bias stress, it can be clarified that the threshold- voltage shift is predominantly attributed to the trapping of negative charge carriers in the defect states located at the gate- dielectric/channel interface.
基金Project supported by Shenzhen Science and Technology Innovation Committee(Grant Nos.ZDSYS201802061805105,JCYJ20190808155007550,QJSCX20170728102129176,and JCYJ20170810163407761)the National Natural Science Foundation of China(Grant No.U1613215).
文摘The impact of supercritical CO2/H2O technology on the threshold-voltage instability of AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors(MIS-HEMTs) is investigated. The MIS-HEMTs were placed in a supercritical fluid system chamber at 150℃ for 3 h. The chamber was injected with CO2 and H2O at pressure of 3000 psi(1 psi ≈ 6.895 kPa). Supercritical H2O fluid has the characteristics of liquid H2O and gaseous H2O at the same time, that is, high penetration and high solubility. In addition, OH-produced by ionization of H2O can fill the nitrogen vacancy near the Si3N4/GaN/AlGaN interface caused by high temperature process. After supercritical CO2/H2O treatment, the threshold voltage shift is reduced from 1 V to 0.3 V. The result shows that the threshold voltage shift of MIS-HEMTs could be suppressed by supercritical CO2/H2O treatment.
