Rapid evolution of communication technologies has changed language pedagogy and language use,and they enable new forms of discourse and new ways to create and participate in communities.Using the modern technology can...Rapid evolution of communication technologies has changed language pedagogy and language use,and they enable new forms of discourse and new ways to create and participate in communities.Using the modern technology can reinforce and expand the ESL stu dents' s language and literacy instruction.It mainly discusses the effects of television on literacy development,and using video to enhance reading outcomes.A great number of studies provide evidence that learners can develop their language and literacy skills from technology.展开更多
Due to the continuous rising demand of handheld devices like iPods, mobile, tablets;specific applications like biomedical applications like pacemakers, hearing aid machines and space applications which require stable ...Due to the continuous rising demand of handheld devices like iPods, mobile, tablets;specific applications like biomedical applications like pacemakers, hearing aid machines and space applications which require stable digital systems with low power consumptions are required. As a main part in digital system the SRAM (Static Random Access Memory) should have low power consumption and stability. As we are continuously moving towards scaling for the last two decades the effect of this is process variations which have severe effect on stability, performance. Reducing the supply voltage to sub-threshold region, which helps in reducing the power consumption to an extent but side by side it raises the issue of the stability of the memory. Static Noise Margin of SRAM cell enforces great challenges to the sub threshold SRAM design. In this paper we have analyzed the cell stability of 9T SRAM Cell at various processes. The cell stability is checked at deep submicron (DSM) technology. In this paper we have analyzed the effect of temperature and supply voltage (Vdd) on the stability parameters of SRAM which is Static Noise Margin (SNM), Write Margin (WM) and Read Current. The effect has been observed at various process corners at 45 nm technology. The temperature has a significant effect on stability along with the Vdd. The Cell has been working efficiently at all process corners and has 50% more SNM from conventional 6T SRAM and 30% more WM from conventional 6T SRAM cell.展开更多
在分析RFID(Radio Frequency Identification)系统中电子标签格式变动需求的基础上,运用XML技术解决电子标签数据格式的变化影响RFID自动识别信息系统正常运行的问题.详细设计了电子标签信息的过滤标准XML文件,将其应用到物流配送中心R...在分析RFID(Radio Frequency Identification)系统中电子标签格式变动需求的基础上,运用XML技术解决电子标签数据格式的变化影响RFID自动识别信息系统正常运行的问题.详细设计了电子标签信息的过滤标准XML文件,将其应用到物流配送中心RFID自动识别信息系统中,并设计了物流配送中心RFID自动识别信息系统中与基于XML的RFID电子标签解决方案相关的类.展开更多
文摘Rapid evolution of communication technologies has changed language pedagogy and language use,and they enable new forms of discourse and new ways to create and participate in communities.Using the modern technology can reinforce and expand the ESL stu dents' s language and literacy instruction.It mainly discusses the effects of television on literacy development,and using video to enhance reading outcomes.A great number of studies provide evidence that learners can develop their language and literacy skills from technology.
文摘Due to the continuous rising demand of handheld devices like iPods, mobile, tablets;specific applications like biomedical applications like pacemakers, hearing aid machines and space applications which require stable digital systems with low power consumptions are required. As a main part in digital system the SRAM (Static Random Access Memory) should have low power consumption and stability. As we are continuously moving towards scaling for the last two decades the effect of this is process variations which have severe effect on stability, performance. Reducing the supply voltage to sub-threshold region, which helps in reducing the power consumption to an extent but side by side it raises the issue of the stability of the memory. Static Noise Margin of SRAM cell enforces great challenges to the sub threshold SRAM design. In this paper we have analyzed the cell stability of 9T SRAM Cell at various processes. The cell stability is checked at deep submicron (DSM) technology. In this paper we have analyzed the effect of temperature and supply voltage (Vdd) on the stability parameters of SRAM which is Static Noise Margin (SNM), Write Margin (WM) and Read Current. The effect has been observed at various process corners at 45 nm technology. The temperature has a significant effect on stability along with the Vdd. The Cell has been working efficiently at all process corners and has 50% more SNM from conventional 6T SRAM and 30% more WM from conventional 6T SRAM cell.
文摘在分析RFID(Radio Frequency Identification)系统中电子标签格式变动需求的基础上,运用XML技术解决电子标签数据格式的变化影响RFID自动识别信息系统正常运行的问题.详细设计了电子标签信息的过滤标准XML文件,将其应用到物流配送中心RFID自动识别信息系统中,并设计了物流配送中心RFID自动识别信息系统中与基于XML的RFID电子标签解决方案相关的类.
