An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents ...An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.展开更多
Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order in...Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.展开更多
Passive intermodulation（PIM） has gradually become a serious electromagnetic interference due to the development of high-power and high-sensitivity RF/microwave communication systems, especially large deployable mesh...Passive intermodulation（PIM） has gradually become a serious electromagnetic interference due to the development of high-power and high-sensitivity RF/microwave communication systems, especially large deployable mesh reflector antennas. This paper proposes a field-circuit coupling method to analyze the PIM level of mesh reflectors. With the existence of many metal–metal（MM） contacts in mesh reflectors, the contact nonlinearity becomes the main reason for PIM generation. To analyze these potential PIM sources, an equivalent circuit model including nonlinear components is constructed to model a single MM contact so that the transient current through the MM contact point induced by incident electromagnetic waves can be calculated. Taking the electric current as a new electromagnetic wave source, the far-field scattering can be obtained by the use of electromagnetic numerical methods or the communication link method. Finally, a comparison between simulation and experimental results is illustrated to verify the validity of the proposed method.展开更多
文摘An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.
文摘Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.
文摘Passive intermodulation（PIM） has gradually become a serious electromagnetic interference due to the development of high-power and high-sensitivity RF/microwave communication systems, especially large deployable mesh reflector antennas. This paper proposes a field-circuit coupling method to analyze the PIM level of mesh reflectors. With the existence of many metal–metal（MM） contacts in mesh reflectors, the contact nonlinearity becomes the main reason for PIM generation. To analyze these potential PIM sources, an equivalent circuit model including nonlinear components is constructed to model a single MM contact so that the transient current through the MM contact point induced by incident electromagnetic waves can be calculated. Taking the electric current as a new electromagnetic wave source, the far-field scattering can be obtained by the use of electromagnetic numerical methods or the communication link method. Finally, a comparison between simulation and experimental results is illustrated to verify the validity of the proposed method.
