Background:Leptomeningeal metastasis(LM)after third-generation EGFR-TKIs resistance carries a dismal prognosis.Limited blood-brain-barrier penetration rather than secondary EGFR mutations is the dominant resistance me...Background:Leptomeningeal metastasis(LM)after third-generation EGFR-TKIs resistance carries a dismal prognosis.Limited blood-brain-barrier penetration rather than secondary EGFR mutations is the dominant resistance mechanism.We report a case managed with CNS-penetrant EGFR inhibition of zorifertinib.Method:A 53-year-old,never-smoking woman with EGFR L858R-mutant stage IVb non-small-cell lung cancer(NSCLC)developed LM after progression on osimertinib 160 mg and firmonertinib 160 mg.Salvage therapy with zorifertinib(200 mg BID)plus firmonertinib(80 mg qd)was initiated.Results:Within 14 days,the coma resolved.Karnofsky Performance Status improved from 20 to 70.Serial imaging at 3 and 5 months revealed stable disease with shrinkage according to RECIST 1.1.Only grade 1-2 diarrhea,rash,and transaminitis occurred and resolved with symptomatic care.Conclusion:The combination of zorifertinib plus firmonertinib provides durable intracranial control and rapid neurological recovery after third-generation EGFR-TKI failure.Prospective validation is warranted.展开更多
The latest progress in the process optimization and stability improvement of third-generation cephalosporins in recent years was reviewed.The introduction of green chemistry,enzyme catalysis,nanotechnology,lyophilizat...The latest progress in the process optimization and stability improvement of third-generation cephalosporins in recent years was reviewed.The introduction of green chemistry,enzyme catalysis,nanotechnology,lyophilization,and nitrogen-filled packaging technologies can only improve production efficiency and reduce the generation of by-products,but also significantly extend the shelf life of drugs.In the future,process automation and intelligent technology will further optimize the large-scale production process,and the combination of nanotechnology and precision drug delivery will promote the improvement of effect in clinical applications.展开更多
Titanium-based semiconductors are known for their high chemical stability and suitable band gap widths.However,the conventional experimental screening methods are inefficient due to the wide variety of materials.To sp...Titanium-based semiconductors are known for their high chemical stability and suitable band gap widths.However,the conventional experimental screening methods are inefficient due to the wide variety of materials.To speed up the selection process,this work focuses on interpretable feature learning and band gap prediction for titanium-based semiconductors.First,titanium compounds were selected from the Materials Project database by machine learning,and elemental features were extracted using the Magpie descriptors.Then,principal component analysis(PCA)was applied to reduce the data dimensionality,creating a representative dataset.Meantime,heatmaps and SHAP(SHapley Additive exPlanations)methods were used to demonstrate the influence of key features such as electronegativity,covalent radius,period number,and unit cell volume on the bandgap,understanding the relationship between the material’s properties and performance.After comparing different machine learning models,including Random Forest(RF),Support Vector Machines(SVM),Linear Regression(LR),and Gradient Boosting Regression(GBR),the RF was found to be the most accurate for band gap prediction.Finally,the model performance was improved through parameter tuning,showing high accuracy.These findings provide strong data support and design guidance for the development of materials in fields like photocatalysis and solar cells.展开更多
Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully construct...Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.展开更多
Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits via all-solution processing techniques.Herein,we report a new four-arme...Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits via all-solution processing techniques.Herein,we report a new four-armed diazo-based oligomer photo-crosslinker 2DPP4N_(2)for the patterning of semiconducting polymers by UV light-induced crossing-linking reaction.After blending 2DPP4N_(2)with polymer semiconductors such as PDPP4T(p-type),PDPP3T(ambipolar)and N2200(n-type),we prepared various patterns with a resolution of 6μm by irradiating through a photo-mask with 254 nm UV light for 160 s.Notably,the interchain packing and surface morphology remained nearly unchanged after photo-patterning,as characterized by atomic force microscopy(AFM)and grazing incidence wide-angle X-ray scattering(GIWAXS).Consequently,the charge transport property of the patterned thin film was largely maintained in comparison to that of its pristine thin film.These results reveal that 2DPP4N_(2)is a viable and promising candidate for application in all-solution-processable flexible integrated electronic devices.展开更多
Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for ...Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.展开更多
Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models...Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.展开更多
Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage cur...Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage current of OSs and compatibility with three-dimensional(3D)architectures have recently sparked renewed interest in their use in semiconductor applications.This review begins by exploring the unique material properties of OSs,which fundamentally originate from their distinct electronic band structure.Subsequently,we focus on atomic layer deposition(ALD),a core technique for growing excellent OS films,covering both basic and advanced processes compatible with 3D scaling.The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced.Furthermore,material design strategies,such as cation selection,crystallinity control,anion doping,and heterostructure engineering,are discussed.We also highlight challenges in memory applications,including contact resistance,hydrogen instability,and lack of p-type materials,and discuss the feasibility of ALD-grown OSs as potential solutions.Lastly,we provide an outlook on the role of ALD-grown OSs in memory technologies.This review bridges material fundamentals and device-level requirements,offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.展开更多
Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep...Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep understanding of the multi-field coupling behavior.This work investigates the free vibration and buckling characteristics of a PS beam under different mechanical boundary conditions.The coupling fields of a PS beam are modeled by combining the Timoshenko beam theory for mechanical fields with a high-order expansion along the beam thickness for electric fields and carrier distributions.Based on the hypothesis of small perturbation of carrier density,the governing equations and boundary conditions are derived with the principle of virtual work.The differential quadrature method(DQM)is used to solve the boundary-value problem.The analytical solutions for a simply supported-simply supported(SS)PS beam are also obtained for verification.The convergence and correctness of the solutions obtained with the DQM are first evaluated.Subsequently,the effects of initial electron density,boundary conditions,and geometric parameters on the vibration and buckling characteristics are explored through numerical examples,where the finite element simulations are also included.The interaction mechanism of multi-physics fields is revealed.The scale effect on the static and dynamic responses of a PS beam is demonstrated.The derived model and findings are useful for the analysis and design of PS-based devices.展开更多
Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical cra...Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical crack under combined mechanical and electric loading,considering both central and edge cracks.Using Fourier transforms and dislocation density functions,the Mode-Ⅲproblem is converted to Cauchy-type singular integral equations.The crack surface fields,intensity factors,and energy release rate are derived.The accuracy of the proposed model is verified through the finite element(FE)simulation via COMSOL Multiphysics.The results for low electron concentrations align with those of the intrinsic piezoelectric materials,validating the correctness of the present model as well.The combined effects of crack position,applied electric loading,and initial carrier concentration on the crack propagation are analyzed.The normalized electric displacement factor shows heightened sensitivity to crack size,electromechanical loading,and carrier concentration.The crack position significantly influences the crack surface fields and normalized intensity factors due to the boundary proximity effect.展开更多
During the past thirty years, two generations of low alloy steels(ferrite/pearlite followed by bainite/martensite) have been developed and widely used in structural applications. The third-generation of low alloy stee...During the past thirty years, two generations of low alloy steels(ferrite/pearlite followed by bainite/martensite) have been developed and widely used in structural applications. The third-generation of low alloy steels is expected to achieve high strength and improved ductility and toughness, while satisfying the new demands for weight reduction, greenness, and safety. This paper reviews recent progress in the development of third-generation low alloy steels with an M^3 microstructure, namely, microstructures with multi-phase, meta-stable austenite, and multi-scale precipitates. The review summarizes the alloy designs and processing routes of microstructure control, and the mechanical properties of the alloys.The stabilization of retained austenite in low alloy steels is especially emphasized. Multi-scale nano-precipitates, including carbides of microalloying elements and Cu-rich precipitates obtained in third-generation low alloy steels, are then introduced. The structure–property relationships of third-generation alloys are also discussed. Finally, the promises and challenges to future applications are explored.展开更多
The breeding and large-scale application of hybrid rice contribute significantly to the food supply worldwide.Currently,hybrid seed production uses cytoplasmic male sterile(CMS)lines or photoperiod/thermo-sensitive ge...The breeding and large-scale application of hybrid rice contribute significantly to the food supply worldwide.Currently,hybrid seed production uses cytoplasmic male sterile(CMS)lines or photoperiod/thermo-sensitive genic male sterile(PTGMS)lines as female parent.Despite huge successes,both systems have intrinsic problems.CMS systems are mainly restricted by the narrow restorer resources that make it difficult to breed superior hybrids,while PTGMS systems are limited by conditional sterility of the male sterile lines that makes the propagation of both PTGMS seeds and hybrid seeds vulnerable to unpredictable climate changes.Recessive nuclear male sterile(NMS)lines insensitive to environmental conditions are widely distributed and are ideal for hybrid rice breeding and production,but the lack of effective ways to propagate the pure NMS lines in a large scale renders it impossible to use them for hybrid rice production.The development of"the third-generation hybrid rice technology"enables efficient propagation of the pure NMS lines in commercial scale.This paper discusses the establishment of"the thirdgeneration hybrid rice technology"and further innovations.This new technology breaks the limitations of CMS and PTGMS systems and will bring a big leap forward in hybrid rice production.展开更多
Objective:Autosomal recessive bestrophinopathy(ARB),a retinal degenerative disease,is characterized by central visual loss,yellowish multifocal diffuse subretinal deposits,and a dramatic decrease in the light peak on ...Objective:Autosomal recessive bestrophinopathy(ARB),a retinal degenerative disease,is characterized by central visual loss,yellowish multifocal diffuse subretinal deposits,and a dramatic decrease in the light peak on electrooculogram.The potential pathogenic mechanism involves mutations in the BEST1 gene,which encodes Ca2+-activated Cl−channels in the retinal pigment epithelium(RPE),resulting in degeneration of RPE and photoreceptor.In this study,the complete clinical characteristics of two Chinese ARB families were summarized.Methods:Pacific Biosciences(PacBio)single-molecule real-time(SMRT)sequencing was performed on the probands to screen for disease-causing gene mutations,and Sanger sequencing was applied to validate variants in the patients and their family members.Results:Two novel mutations,c.202T>C(chr11:61722628,p.Y68H)and c.867+97G>A,in the BEST1 gene were identified in the two Chinese ARB families.The novel missense mutation BEST1 c.202T>C(p.Y68H)resulted in the substitution of tyrosine with histidine in the N-terminal region of transmembrane domain 2 of bestrophin-1.Another novel variant,BEST1 c.867+97G>A(chr11:61725867),located in intron 7,might be considered a regulatory variant that changes allele-specific binding affinity based on motifs of important transcriptional regulators.Conclusion:Our findings represent the first use of third-generation sequencing(TGS)to identify novel BEST1 mutations in patients with ARB,indicating that TGS can be a more accurate and efficient tool for identifying mutations in specific genes.The novel variants identified further broaden the mutation spectrum of BEST1 in the Chinese population.展开更多
The existing numerical models for nearshore waves are briefly introduced, and the third-generation numerical model for shallow water wave, which makes use of the most advanced productions of wave research and has been...The existing numerical models for nearshore waves are briefly introduced, and the third-generation numerical model for shallow water wave, which makes use of the most advanced productions of wave research and has been adapted well to be used in the environment of seacoast, lake and estuary area, is particularly discussed. The applied model realizes the significant wave height distribution at different wind directions. To integrate the model into the coastal area sediment, sudden deposition mechanism, the distribution of average silt content and the change of sediment sudden deposition thickness over time in the nearshore area are simulated. The academic productions can give some theoretical guidance to the applications of sediment sudden deposition mechanism for stormy waves in the coastal area. And the advancing directions of sediment sudden deposition model are prospected.展开更多
The Third-Generation Poetry of China （namely Post-misty Poetry too） initiated with the introduction of Western modernist poetry, especially sorts of American Post-modernist poetry schools into China. ＂The relation ...The Third-Generation Poetry of China （namely Post-misty Poetry too） initiated with the introduction of Western modernist poetry, especially sorts of American Post-modernist poetry schools into China. ＂The relation between American poetry and Chinese poetry has a long history, which lies in the influences on the creation of the Third-Generation poets. This influence is probably unprecedented in its depth and breadth.＂ ＂Irrational association＂ and ＂leaping images＂ proposed by American Deep Image poets influenced by Freudian and Jungian unconscious perception gained an extraordinary appreciation among the Third-Generation poets who were in pursuit constantly of the experiments on poetic form and language. This paper mainly discusses the influences of American Deep Image on the Third-Generation poets of China through a case study of WANG Yin and CHEN Dongdong＇s poems.展开更多
The development of measurement geometry for medical X-ray computed tomography （CT） scanners was carried out from the first to the fourth-generation. This concept has also been applied for imaging of industrial proce...The development of measurement geometry for medical X-ray computed tomography （CT） scanners was carried out from the first to the fourth-generation. This concept has also been applied for imaging of industrial processes such as pipe flows or for improving design, operation, optimization and troubleshooting. Nowadays, gamma CT permits to visualize failure equipment points in three-dimensional analysis and in sections of chemical and petrochemical industries. The aim of this work is the development of the mechanical system on a third-generation industrial CT scanner to analyze laboratorial process columns which perform highly efficient separation, turning the ^6oCo, ^75Se, ^137Cs and/or ^192Ir sealed gamma-ray source（s） and the NaI（Tl） multidetector array. It also has a translation movement along the column axis to obtain as many slices of the process flow as needed. The mechanical assembly for this third-generation industrial CT scanner is comprised by strength and rigidity structural frame in stainless and carbon steels, rotating table, source shield and collimator with pneumatic exposure system, spur gear system, translator, rotary stage, drives and stepper motors. The use of suitable spur gears has given a good repeatability and high accuracy in the degree of veracity. The data acquisition boards, mechanical control interfaces, software for movement control and image reconstruction were specially development. A multiphase phantom capable to be setting with solid, liquid and gas was testing. The scanner was setting for 90 views and 19 projections for each detector totalizing 11,970 projections. Experiments to determine the linear attenuation coefficients of the phantom were carried out which applied the Lambert-Beer principle. Results showed that it was possible to distinguish between the phases even the polymethylmethacrylate and the water have very similar density and linear attenuation coefficients. It was established that the newly developed third-generation fan-beam arrangement gamma scanner unit has a good spatial resolution acceptable given the size of the used phantom in this study. The tomografic reconstruction algorithm in used 60 ~ 60 pixels images was the Alternative Minimization （AM） technique and was implemented in MATLAB and VB platforms. The mechanical system presented a good performance in terms of strength, rigidity, accuracy and repeatability with great potential to be used for education or program which dedicated to training chemical and petrochemical industry professionals and for industrial process optimization in Brazil.展开更多
Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologie...Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.展开更多
In this paper,we theoretically study the Lamb wave in a multilayered piezoelectric semiconductor(PSC)plate,where each layer is an n-type PSC with the symmetry of transverse isotropy.Based on the extended Stroh formali...In this paper,we theoretically study the Lamb wave in a multilayered piezoelectric semiconductor(PSC)plate,where each layer is an n-type PSC with the symmetry of transverse isotropy.Based on the extended Stroh formalism and dual-variable and position(DVP)method,the general solution of the coupled fields for the Lamb wave is derived,and then the dispersion equation is obtained by the application of the boundary conditions.First,the influence of semiconducting properties on the dispersion behavior of the Lamb wave in a single-layer PSC plate is analyzed.Then,the propagation characteristics of the Lamb wave in a sandwich plate are investigated in detail.The numerical results show that the wave speed and attenuation depend on the stacking sequence,layer thickness,and initial carrier density,the Lamb wave can propagate without a cut-off frequency in both the homogeneous and multilayer PSC plates due to the semiconducting properties,and the Lamb wave without attenuation can be achieved by carefully selecting the semiconductor property in the upper and lower layers.These new features could be very helpful as theoretical guidance for the design and performance optimization of PSC devices.展开更多
Workpiece rotational grinding is widely used in the ultra-precision machining of hard and brittle semiconductor materials,including single-crystal silicon,silicon carbide,and gallium arsenide.Surface roughness and sub...Workpiece rotational grinding is widely used in the ultra-precision machining of hard and brittle semiconductor materials,including single-crystal silicon,silicon carbide,and gallium arsenide.Surface roughness and subsurface damage depth(SDD)are crucial indicators for evaluating the surface quality of these materials after grinding.Existing prediction models lack general applicability and do not accurately account for the complex material behavior under grinding conditions.This paper introduces novel models for predicting both surface roughness and SDD in hard and brittle semiconductor materials.The surface roughness model uniquely incorporates the material’s elastic recovery properties,revealing the significant impact of these properties on prediction accuracy.The SDD model is distinguished by its analysis of the interactions between abrasive grits and the workpiece,as well as the mechanisms governing stress-induced damage evolution.The surface roughness model and SDD model both establish a stable relationship with the grit depth of cut(GDC).Additionally,we have developed an analytical relationship between the GDC and grinding process parameters.This,in turn,enables the establishment of an analytical framework for predicting surface roughness and SDD based on grinding process parameters,which cannot be achieved by previous models.The models were validated through systematic experiments on three different semiconductor materials,demonstrating excellent agreement with experimental data,with prediction errors of 6.3%for surface roughness and6.9%for SDD.Additionally,this study identifies variations in elastic recovery and material plasticity as critical factors influencing surface roughness and SDD across different materials.These findings significantly advance the accuracy of predictive models and broaden their applicability for grinding hard and brittle semiconductor materials.展开更多
We present a theoretical scheme to realize two-dimensional(2D)asymmetric diffraction grating in a five-level inverted Y-type asymmetric double semiconductor quantum wells(SQWs)structure with resonant tunneling.The SQW...We present a theoretical scheme to realize two-dimensional(2D)asymmetric diffraction grating in a five-level inverted Y-type asymmetric double semiconductor quantum wells(SQWs)structure with resonant tunneling.The SQW structure interacts with a weak probe laser field,a spatially independent 2D standing-wave(SW)field,and a Laguerre–Gaussian(LG)vortex field,respectively.The results indicate that the diffraction patterns are highly sensitive to amplitude modulation and phase modulation.Because of the existence of vortex light,it is possible to realize asymmetric high-order diffraction in the SQW structure,and then a 2D asymmetric grating is established.By adjusting the detunings of the probe field,vortex field,and SW field,as well as the interaction length,diffraction intensity,and direction of the 2D asymmetric electromagnetically induced grating(EIG)can be controlled effectively.In addition,the number of orbital angular momenta(OAM)and beam waist parameter can be used to modulate the diffraction intensity and energy transfer of the probe light in different regions.High-order diffraction intensity is enhanced and high-efficiency 2D asymmetric diffraction grating with different diffraction patterns is obtained in the scheme.Such 2D asymmetric diffraction grating may be beneficial to the research of optical communication and innovative semiconductor quantum devices.展开更多
文摘Background:Leptomeningeal metastasis(LM)after third-generation EGFR-TKIs resistance carries a dismal prognosis.Limited blood-brain-barrier penetration rather than secondary EGFR mutations is the dominant resistance mechanism.We report a case managed with CNS-penetrant EGFR inhibition of zorifertinib.Method:A 53-year-old,never-smoking woman with EGFR L858R-mutant stage IVb non-small-cell lung cancer(NSCLC)developed LM after progression on osimertinib 160 mg and firmonertinib 160 mg.Salvage therapy with zorifertinib(200 mg BID)plus firmonertinib(80 mg qd)was initiated.Results:Within 14 days,the coma resolved.Karnofsky Performance Status improved from 20 to 70.Serial imaging at 3 and 5 months revealed stable disease with shrinkage according to RECIST 1.1.Only grade 1-2 diarrhea,rash,and transaminitis occurred and resolved with symptomatic care.Conclusion:The combination of zorifertinib plus firmonertinib provides durable intracranial control and rapid neurological recovery after third-generation EGFR-TKI failure.Prospective validation is warranted.
基金Supported by the Funds from Central Government for Guiding Local Science and Technology Development(ZY20230102)Planning Project of Scientific Research and Technology Development in Guilin(20220104-4,20210202-1)Science and Technology Planing Project of Guangxi(Guike AB24010263).
文摘The latest progress in the process optimization and stability improvement of third-generation cephalosporins in recent years was reviewed.The introduction of green chemistry,enzyme catalysis,nanotechnology,lyophilization,and nitrogen-filled packaging technologies can only improve production efficiency and reduce the generation of by-products,but also significantly extend the shelf life of drugs.In the future,process automation and intelligent technology will further optimize the large-scale production process,and the combination of nanotechnology and precision drug delivery will promote the improvement of effect in clinical applications.
文摘Titanium-based semiconductors are known for their high chemical stability and suitable band gap widths.However,the conventional experimental screening methods are inefficient due to the wide variety of materials.To speed up the selection process,this work focuses on interpretable feature learning and band gap prediction for titanium-based semiconductors.First,titanium compounds were selected from the Materials Project database by machine learning,and elemental features were extracted using the Magpie descriptors.Then,principal component analysis(PCA)was applied to reduce the data dimensionality,creating a representative dataset.Meantime,heatmaps and SHAP(SHapley Additive exPlanations)methods were used to demonstrate the influence of key features such as electronegativity,covalent radius,period number,and unit cell volume on the bandgap,understanding the relationship between the material’s properties and performance.After comparing different machine learning models,including Random Forest(RF),Support Vector Machines(SVM),Linear Regression(LR),and Gradient Boosting Regression(GBR),the RF was found to be the most accurate for band gap prediction.Finally,the model performance was improved through parameter tuning,showing high accuracy.These findings provide strong data support and design guidance for the development of materials in fields like photocatalysis and solar cells.
文摘Under hydrothermal and solvothermal conditions,two novel cobalt-based complexes,{[Co_(2)(CIA)(OH)(1,4-dtb)]·3.2H_(2)O}n(HU23)and{[Co_(2)(CIA)(OH)(1,4-dib)]·3.5H2O·DMF}n(HU24),were successfully constructed by coordinatively assembling the semi-rigid multidentate ligand 5-(1-carboxyethoxy)isophthalic acid(H₃CIA)with the Nheterocyclic ligands 1,4-di(4H-1,2,4-triazol-4-yl)benzene(1,4-dtb)and 1,4-di(1H-imidazol-1-yl)benzene(1,4-dib),respectively,around Co^(2+)ions.Single-crystal X-ray diffraction analysis revealed that in both complexes HU23 and HU24,the CIA^(3-)anions adopt aκ^(7)-coordination mode,bridging six Co^(2+)ions via their five carboxylate oxygen atoms and one ether oxygen atom.This linkage forms tetranuclear[Co4(μ3-OH)2]^(6+)units.These Co-oxo cluster units were interconnected by CIA^(3-)anions to assemble into 2D kgd-type structures featuring a 3,6-connected topology.The 2D layers were further connected by 1,4-dtb and 1,4-dib,resulting in 3D pillar-layered frameworks for HU23 and HU24.Notably,despite the similar configurations of 1,4-dtb and 1,4-dib,differences in their coordination spatial orientations lead to topological divergence in the 3D frameworks of HU23 and HU24.Topological analysis indicates that the frameworks of HU23 and HU24 can be simplified into a 3,10-connected net(point symbol:(4^(10).6^(3).8^(2))(4^(3))_(2))and a 3,8-connected tfz-d net(point symbol:(4^(3))_(2)((4^(6).6^(18).8^(4)))),respectively.This structural differentiation confirms the precise regulatory role of ligands on the topology of metal-organic frameworks.Moreover,the ultraviolet-visible absorption spectra confirmed that HU23 and HU24 have strong absorption capabilities for ultraviolet and visible light.According to the Kubelka-Munk method,their bandwidths were 2.15 and 2.08 eV,respectively,which are consistent with those of typical semiconductor materials.Variable-temperature magnetic susceptibility measurements(2-300 K)revealed significant antiferromagnetic coupling in both complexes,with their effective magnetic moments decreasing markedly as the temperature lowered.CCDC:2457554,HU23;2457553,HU24.
基金supported by the National Natural Science Foundation of China(No.22205242)。
文摘Efficient photo-patterning of polymer semiconductors with cross-linkers has emerged as a promising route to fabricate organic integrated circuits via all-solution processing techniques.Herein,we report a new four-armed diazo-based oligomer photo-crosslinker 2DPP4N_(2)for the patterning of semiconducting polymers by UV light-induced crossing-linking reaction.After blending 2DPP4N_(2)with polymer semiconductors such as PDPP4T(p-type),PDPP3T(ambipolar)and N2200(n-type),we prepared various patterns with a resolution of 6μm by irradiating through a photo-mask with 254 nm UV light for 160 s.Notably,the interchain packing and surface morphology remained nearly unchanged after photo-patterning,as characterized by atomic force microscopy(AFM)and grazing incidence wide-angle X-ray scattering(GIWAXS).Consequently,the charge transport property of the patterned thin film was largely maintained in comparison to that of its pristine thin film.These results reveal that 2DPP4N_(2)is a viable and promising candidate for application in all-solution-processable flexible integrated electronic devices.
基金supported by the National Natural Science Foundation of China(Grant No.22175136)the State Key Laboratory of Electrical Insulation and Power Equipment(Grant No.EIPE23127)the Fundamental Research Funds for the Central Universities(xtr052024009,xtr052025002).
文摘Violet phosphorus,a recently explored layered elemental semiconductor,has attracted much attention due to its unique photoelectric,mechanical properties,and high hole mobility.Herein,violet arsenic phosphorus has for the first time been synthesized by a molten lead method.The crystal structure of violet arsenic phosphorus(P^(83.4)As_(0.6),CSD-2408761)was determined by single crystal X-ray diffraction to have similar structure as that of violet phosphorus,where P12 is occupied by arsenic/phosphorus(As/P)atoms as mixed occupancy sites As1/P12.The arsenic substitution has been demonstrated to tune the band structure of violet phosphorus,switching p-type of violet phosphorus to high-performance n-type violet arsenic phosphorus.The effective electron mass along the<010>direction is significantly reduced from 1.792 to 0.515 m_(0)by arsenic substitution,resulting in an extremely high electron mobility of 2622.503 cm^(2)V^(-1)s^(-1).The field effect transistor built with P_(83.4)As_(0.6)nanosheets was measured to have a high electron mobility(137.06 cm^(2)V^(-1)s^(-1),61.2 nm),even under ambient conditions for 5 h,much higher than the hole mobility of violet phosphorene nanosheets(4.07 cm^(2)V^(-1)s^(-1),73.3 nm).This work provides a new idea for designing phosphorus-based materials for field effect transistors,giving significant potential in complementary metal-oxide-semiconductor applications.
基金Project supported by the National Natural Science Foundation of China(No.12402113)the Sichuan Science and Technology Program(No.2024NSFSC0037)。
文摘Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.
基金supported by National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(MSIT)(No.RS-2023-00260527,RS-2024-00407282,RS-2025-00557667)supported by Hanyang University Industry-University Cooperation Foundation(No.202400000003943)supported by Korea Planning&Evaluation Institute of Industrial Technology(KEIT)funded by South Korean Ministry of Trade,Industry and Energy(MOTIE)(No.RS-2025-25454815,RS-2025-02308064,20017382)。
文摘Oxide semiconductors(OSs),introduced by the Hosono group in the early 2000s,have evolved from display backplane materials to promising candidates for advanced memory and logic devices.The exceptionally low leakage current of OSs and compatibility with three-dimensional(3D)architectures have recently sparked renewed interest in their use in semiconductor applications.This review begins by exploring the unique material properties of OSs,which fundamentally originate from their distinct electronic band structure.Subsequently,we focus on atomic layer deposition(ALD),a core technique for growing excellent OS films,covering both basic and advanced processes compatible with 3D scaling.The basic surface reaction mechanisms—adsorption and reaction—and their roles in film growth are introduced.Furthermore,material design strategies,such as cation selection,crystallinity control,anion doping,and heterostructure engineering,are discussed.We also highlight challenges in memory applications,including contact resistance,hydrogen instability,and lack of p-type materials,and discuss the feasibility of ALD-grown OSs as potential solutions.Lastly,we provide an outlook on the role of ALD-grown OSs in memory technologies.This review bridges material fundamentals and device-level requirements,offering a comprehensive perspective on the potential of ALD-driven OSs for next-generation semiconductor memory devices.
基金Project supported by the National Natural Science Foundation of China(Nos.U21A20430 and 12472155)the Natural Science Foundation of Hebei Province of China(No.A2024210002)。
文摘Due to the intrinsic interaction between piezoelectric effects and semiconducting properties,piezoelectric semiconductors(PSs)have great promise for applications in multi-functional electronic devices,requiring a deep understanding of the multi-field coupling behavior.This work investigates the free vibration and buckling characteristics of a PS beam under different mechanical boundary conditions.The coupling fields of a PS beam are modeled by combining the Timoshenko beam theory for mechanical fields with a high-order expansion along the beam thickness for electric fields and carrier distributions.Based on the hypothesis of small perturbation of carrier density,the governing equations and boundary conditions are derived with the principle of virtual work.The differential quadrature method(DQM)is used to solve the boundary-value problem.The analytical solutions for a simply supported-simply supported(SS)PS beam are also obtained for verification.The convergence and correctness of the solutions obtained with the DQM are first evaluated.Subsequently,the effects of initial electron density,boundary conditions,and geometric parameters on the vibration and buckling characteristics are explored through numerical examples,where the finite element simulations are also included.The interaction mechanism of multi-physics fields is revealed.The scale effect on the static and dynamic responses of a PS beam is demonstrated.The derived model and findings are useful for the analysis and design of PS-based devices.
基金Project supported by the Guangdong Basic and Applied Basic Research Foundation of China(Nos.2022B1515020099 and 2024A1515240026)the National Natural Science Foundation of China(No.12372147)the Fundamental Research Funds for the Central Universities of China(No.HIT.OCEF.2024019)。
文摘Understanding the fracture behavior of vertical cracks in piezoelectric semiconductor(PS)structures is vital due to their impacts on device reliability.This study establishes a model for a PS strip with a vertical crack under combined mechanical and electric loading,considering both central and edge cracks.Using Fourier transforms and dislocation density functions,the Mode-Ⅲproblem is converted to Cauchy-type singular integral equations.The crack surface fields,intensity factors,and energy release rate are derived.The accuracy of the proposed model is verified through the finite element(FE)simulation via COMSOL Multiphysics.The results for low electron concentrations align with those of the intrinsic piezoelectric materials,validating the correctness of the present model as well.The combined effects of crack position,applied electric loading,and initial carrier concentration on the crack propagation are analyzed.The normalized electric displacement factor shows heightened sensitivity to crack size,electromechanical loading,and carrier concentration.The crack position significantly influences the crack surface fields and normalized intensity factors due to the boundary proximity effect.
基金financially supported by the National Natural Science Foundation of China (No. 51701012)the National Basic Research Program of China (973 Program: No. 2010CB630801)the Fundamental Research Funds for the Central Universities (No. FRF-TP-17-004A1)
文摘During the past thirty years, two generations of low alloy steels(ferrite/pearlite followed by bainite/martensite) have been developed and widely used in structural applications. The third-generation of low alloy steels is expected to achieve high strength and improved ductility and toughness, while satisfying the new demands for weight reduction, greenness, and safety. This paper reviews recent progress in the development of third-generation low alloy steels with an M^3 microstructure, namely, microstructures with multi-phase, meta-stable austenite, and multi-scale precipitates. The review summarizes the alloy designs and processing routes of microstructure control, and the mechanical properties of the alloys.The stabilization of retained austenite in low alloy steels is especially emphasized. Multi-scale nano-precipitates, including carbides of microalloying elements and Cu-rich precipitates obtained in third-generation low alloy steels, are then introduced. The structure–property relationships of third-generation alloys are also discussed. Finally, the promises and challenges to future applications are explored.
基金supported by the National Natural Science Foundation of China(U1901203)Natural Science Foundation of Guangdong Province(2018B030308008 and 2019A1515110671)+2 种基金Major Program of Guangdong Basic and Applied Research(2019B030302006)Shenzhen Commission on Innovation and Technology Programs(JCYJ20180507181837997)China Postdoctoral Science Foundation(2019M662957)。
文摘The breeding and large-scale application of hybrid rice contribute significantly to the food supply worldwide.Currently,hybrid seed production uses cytoplasmic male sterile(CMS)lines or photoperiod/thermo-sensitive genic male sterile(PTGMS)lines as female parent.Despite huge successes,both systems have intrinsic problems.CMS systems are mainly restricted by the narrow restorer resources that make it difficult to breed superior hybrids,while PTGMS systems are limited by conditional sterility of the male sterile lines that makes the propagation of both PTGMS seeds and hybrid seeds vulnerable to unpredictable climate changes.Recessive nuclear male sterile(NMS)lines insensitive to environmental conditions are widely distributed and are ideal for hybrid rice breeding and production,but the lack of effective ways to propagate the pure NMS lines in a large scale renders it impossible to use them for hybrid rice production.The development of"the third-generation hybrid rice technology"enables efficient propagation of the pure NMS lines in commercial scale.This paper discusses the establishment of"the thirdgeneration hybrid rice technology"and further innovations.This new technology breaks the limitations of CMS and PTGMS systems and will bring a big leap forward in hybrid rice production.
文摘Objective:Autosomal recessive bestrophinopathy(ARB),a retinal degenerative disease,is characterized by central visual loss,yellowish multifocal diffuse subretinal deposits,and a dramatic decrease in the light peak on electrooculogram.The potential pathogenic mechanism involves mutations in the BEST1 gene,which encodes Ca2+-activated Cl−channels in the retinal pigment epithelium(RPE),resulting in degeneration of RPE and photoreceptor.In this study,the complete clinical characteristics of two Chinese ARB families were summarized.Methods:Pacific Biosciences(PacBio)single-molecule real-time(SMRT)sequencing was performed on the probands to screen for disease-causing gene mutations,and Sanger sequencing was applied to validate variants in the patients and their family members.Results:Two novel mutations,c.202T>C(chr11:61722628,p.Y68H)and c.867+97G>A,in the BEST1 gene were identified in the two Chinese ARB families.The novel missense mutation BEST1 c.202T>C(p.Y68H)resulted in the substitution of tyrosine with histidine in the N-terminal region of transmembrane domain 2 of bestrophin-1.Another novel variant,BEST1 c.867+97G>A(chr11:61725867),located in intron 7,might be considered a regulatory variant that changes allele-specific binding affinity based on motifs of important transcriptional regulators.Conclusion:Our findings represent the first use of third-generation sequencing(TGS)to identify novel BEST1 mutations in patients with ARB,indicating that TGS can be a more accurate and efficient tool for identifying mutations in specific genes.The novel variants identified further broaden the mutation spectrum of BEST1 in the Chinese population.
文摘The existing numerical models for nearshore waves are briefly introduced, and the third-generation numerical model for shallow water wave, which makes use of the most advanced productions of wave research and has been adapted well to be used in the environment of seacoast, lake and estuary area, is particularly discussed. The applied model realizes the significant wave height distribution at different wind directions. To integrate the model into the coastal area sediment, sudden deposition mechanism, the distribution of average silt content and the change of sediment sudden deposition thickness over time in the nearshore area are simulated. The academic productions can give some theoretical guidance to the applications of sediment sudden deposition mechanism for stormy waves in the coastal area. And the advancing directions of sediment sudden deposition model are prospected.
文摘The Third-Generation Poetry of China （namely Post-misty Poetry too） initiated with the introduction of Western modernist poetry, especially sorts of American Post-modernist poetry schools into China. ＂The relation between American poetry and Chinese poetry has a long history, which lies in the influences on the creation of the Third-Generation poets. This influence is probably unprecedented in its depth and breadth.＂ ＂Irrational association＂ and ＂leaping images＂ proposed by American Deep Image poets influenced by Freudian and Jungian unconscious perception gained an extraordinary appreciation among the Third-Generation poets who were in pursuit constantly of the experiments on poetic form and language. This paper mainly discusses the influences of American Deep Image on the Third-Generation poets of China through a case study of WANG Yin and CHEN Dongdong＇s poems.
文摘The development of measurement geometry for medical X-ray computed tomography （CT） scanners was carried out from the first to the fourth-generation. This concept has also been applied for imaging of industrial processes such as pipe flows or for improving design, operation, optimization and troubleshooting. Nowadays, gamma CT permits to visualize failure equipment points in three-dimensional analysis and in sections of chemical and petrochemical industries. The aim of this work is the development of the mechanical system on a third-generation industrial CT scanner to analyze laboratorial process columns which perform highly efficient separation, turning the ^6oCo, ^75Se, ^137Cs and/or ^192Ir sealed gamma-ray source（s） and the NaI（Tl） multidetector array. It also has a translation movement along the column axis to obtain as many slices of the process flow as needed. The mechanical assembly for this third-generation industrial CT scanner is comprised by strength and rigidity structural frame in stainless and carbon steels, rotating table, source shield and collimator with pneumatic exposure system, spur gear system, translator, rotary stage, drives and stepper motors. The use of suitable spur gears has given a good repeatability and high accuracy in the degree of veracity. The data acquisition boards, mechanical control interfaces, software for movement control and image reconstruction were specially development. A multiphase phantom capable to be setting with solid, liquid and gas was testing. The scanner was setting for 90 views and 19 projections for each detector totalizing 11,970 projections. Experiments to determine the linear attenuation coefficients of the phantom were carried out which applied the Lambert-Beer principle. Results showed that it was possible to distinguish between the phases even the polymethylmethacrylate and the water have very similar density and linear attenuation coefficients. It was established that the newly developed third-generation fan-beam arrangement gamma scanner unit has a good spatial resolution acceptable given the size of the used phantom in this study. The tomografic reconstruction algorithm in used 60 ~ 60 pixels images was the Alternative Minimization （AM） technique and was implemented in MATLAB and VB platforms. The mechanical system presented a good performance in terms of strength, rigidity, accuracy and repeatability with great potential to be used for education or program which dedicated to training chemical and petrochemical industry professionals and for industrial process optimization in Brazil.
基金supported by the National Natural Science Foundation of China(62374150)Natural Science Foundation of Henan(242300421216)+3 种基金C.Zheng acknowledges the support of China Postdoctoral Science Foundation(Grant No.2023TQ0296)the Postdoctoral Fellowship Program of CPSF(Grant No.GZC20232389)Y.Xie acknowledges the support of National Natural Science Foundation of China(62074011,62134008)Beijing Outstanding Young Scientist Program(JWZQ20240102009).
文摘Semiconductor optoelectronics devices,capable of converting electrical power into light or conversely light into electrical power in a compact and highly efficient manner represent one of the most advanced technologies ever developed,which has profoundly reshaped the modern life with a wide range of applications.In recent decades,semiconductor technology has rapidly evolved from first-generation narrow bandgap materials(Si,Ge)to the latest fourth-generation ultra-wide bandgap semiconductor(GaO,diamond,AlN)with enhanced performance to meet growing demands.Additionally,merging semiconductor devices with other techniques,such as computer assisted design,state-of-the-art micro/nano fabrications,novel epitaxial growth,have significantly accelerated the development of semiconductor optoelectronics devices.Among them,integrating metasurfaces with semiconductor optoelectronic devices have opened new frontiers for on-chip control of their electromagnetic response,providing access to previously inaccessible degrees of freedom.We review the recent advances in on-chip control of a variety of semiconductor optoelectronic devices using integrated metasurfaces,including semiconductor lasers,semiconductor light emitting devices,semiconductor photodetectors,and low dimensional semiconductors.The integration of metasurfaces with semiconductors offers wafer-level ultracompact solutions for manipulating the functionalities of semiconductor devices,while also providing a practical platform for implementing cuttingedge metasurface technology in real-world applications.
基金Project supported by the National Natural Science Foundation of China(Nos.U21A20430 and 12302202)the Hebei Natural Science Foundation of China(No.A2023210040)+1 种基金the Science and Technology Project of Hebei Education Department of China(No.BJ2025005)the Hebei Provincial Department of Human Resources and Social Security of China(No.C20220324)。
文摘In this paper,we theoretically study the Lamb wave in a multilayered piezoelectric semiconductor(PSC)plate,where each layer is an n-type PSC with the symmetry of transverse isotropy.Based on the extended Stroh formalism and dual-variable and position(DVP)method,the general solution of the coupled fields for the Lamb wave is derived,and then the dispersion equation is obtained by the application of the boundary conditions.First,the influence of semiconducting properties on the dispersion behavior of the Lamb wave in a single-layer PSC plate is analyzed.Then,the propagation characteristics of the Lamb wave in a sandwich plate are investigated in detail.The numerical results show that the wave speed and attenuation depend on the stacking sequence,layer thickness,and initial carrier density,the Lamb wave can propagate without a cut-off frequency in both the homogeneous and multilayer PSC plates due to the semiconducting properties,and the Lamb wave without attenuation can be achieved by carefully selecting the semiconductor property in the upper and lower layers.These new features could be very helpful as theoretical guidance for the design and performance optimization of PSC devices.
基金supported by the National Key Research and Development Program of China(2022YFB3605902)the National Natural Science Foundation of China(52375411,52293402)。
文摘Workpiece rotational grinding is widely used in the ultra-precision machining of hard and brittle semiconductor materials,including single-crystal silicon,silicon carbide,and gallium arsenide.Surface roughness and subsurface damage depth(SDD)are crucial indicators for evaluating the surface quality of these materials after grinding.Existing prediction models lack general applicability and do not accurately account for the complex material behavior under grinding conditions.This paper introduces novel models for predicting both surface roughness and SDD in hard and brittle semiconductor materials.The surface roughness model uniquely incorporates the material’s elastic recovery properties,revealing the significant impact of these properties on prediction accuracy.The SDD model is distinguished by its analysis of the interactions between abrasive grits and the workpiece,as well as the mechanisms governing stress-induced damage evolution.The surface roughness model and SDD model both establish a stable relationship with the grit depth of cut(GDC).Additionally,we have developed an analytical relationship between the GDC and grinding process parameters.This,in turn,enables the establishment of an analytical framework for predicting surface roughness and SDD based on grinding process parameters,which cannot be achieved by previous models.The models were validated through systematic experiments on three different semiconductor materials,demonstrating excellent agreement with experimental data,with prediction errors of 6.3%for surface roughness and6.9%for SDD.Additionally,this study identifies variations in elastic recovery and material plasticity as critical factors influencing surface roughness and SDD across different materials.These findings significantly advance the accuracy of predictive models and broaden their applicability for grinding hard and brittle semiconductor materials.
基金supported by the National Natural Science Foundation of China(Grant No.12105210)the Knowledge Innovation Program of Wuhan-Basi Research(Grant No.2023010201010149)。
文摘We present a theoretical scheme to realize two-dimensional(2D)asymmetric diffraction grating in a five-level inverted Y-type asymmetric double semiconductor quantum wells(SQWs)structure with resonant tunneling.The SQW structure interacts with a weak probe laser field,a spatially independent 2D standing-wave(SW)field,and a Laguerre–Gaussian(LG)vortex field,respectively.The results indicate that the diffraction patterns are highly sensitive to amplitude modulation and phase modulation.Because of the existence of vortex light,it is possible to realize asymmetric high-order diffraction in the SQW structure,and then a 2D asymmetric grating is established.By adjusting the detunings of the probe field,vortex field,and SW field,as well as the interaction length,diffraction intensity,and direction of the 2D asymmetric electromagnetically induced grating(EIG)can be controlled effectively.In addition,the number of orbital angular momenta(OAM)and beam waist parameter can be used to modulate the diffraction intensity and energy transfer of the probe light in different regions.High-order diffraction intensity is enhanced and high-efficiency 2D asymmetric diffraction grating with different diffraction patterns is obtained in the scheme.Such 2D asymmetric diffraction grating may be beneficial to the research of optical communication and innovative semiconductor quantum devices.
