An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents ...An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.展开更多
设计了一个工作于2.5 GHz、最高输出功率达到31.8 d Bm的CMOS功率放大器(PA),该PA由两级放大器组成,两级放大器均采用全差分电路结构。为了实现1 W以上的输出功率,第二级放大电路由两个完全相同的子放大器组成,然后通过高效率的片上功...设计了一个工作于2.5 GHz、最高输出功率达到31.8 d Bm的CMOS功率放大器(PA),该PA由两级放大器组成,两级放大器均采用全差分电路结构。为了实现1 W以上的输出功率,第二级放大电路由两个完全相同的子放大器组成,然后通过高效率的片上功率合成器将两个子放大器的输出电压相加。片上二次谐波短路电路用来提高PA的线性度,对比没有采用二次谐波短路的PA,采用二次谐波短路后PA的三次谐波失真下降7 d B。该PA采用TSMC 0.18μm CMOS设计,采用Agilent ADS软件进行电路仿真和片上无源器件的设计,电路仿真结果表明:在2.5 GHz工作频率点,PA的输入完全匹配(S11=-25 d B),小信号增益达到25 d B,功率增益为19.4 d B,最高输出功率达到31.8 d Bm,最高功率附加效率(PAE)达到32.9%,三阶交调失真在输出功率等于22.3 d Bm时为-30 d Bc。展开更多
文摘An accurate circuit model of the microwave small signal characteristics of AlGaAs/GaAs HBT (heterojunction bipolar transistor) is extremely useful for microwave linear applications of the device. This paper presents a small signal AlGaAs/GaAs HBT equivalent circuit, based on the DC characteristics and S parameter of the device. Using Volterra series, we have calculated the third order intermodulation distortion in a linear AlGaAs/GaAs HBT amplifier. The calculations are well concordant with the measurements from two tone signals intermodulation distortion test, and its excellent third order intermodulation performance shows that AlGaAs/GaAs HBT is a very attractive candidate for linear amplification.
文摘设计了一个工作于2.5 GHz、最高输出功率达到31.8 d Bm的CMOS功率放大器(PA),该PA由两级放大器组成,两级放大器均采用全差分电路结构。为了实现1 W以上的输出功率,第二级放大电路由两个完全相同的子放大器组成,然后通过高效率的片上功率合成器将两个子放大器的输出电压相加。片上二次谐波短路电路用来提高PA的线性度,对比没有采用二次谐波短路的PA,采用二次谐波短路后PA的三次谐波失真下降7 d B。该PA采用TSMC 0.18μm CMOS设计,采用Agilent ADS软件进行电路仿真和片上无源器件的设计,电路仿真结果表明:在2.5 GHz工作频率点,PA的输入完全匹配(S11=-25 d B),小信号增益达到25 d B,功率增益为19.4 d B,最高输出功率达到31.8 d Bm,最高功率附加效率(PAE)达到32.9%,三阶交调失真在输出功率等于22.3 d Bm时为-30 d Bc。
