A novel high-order three-dimensional （3-D） discontinuous Galerkin time domain （DGTD） method based on a normalized formulation of Maxwell＇s equations is developed for modeling and simulating silicon-on-insulator ...A novel high-order three-dimensional （3-D） discontinuous Galerkin time domain （DGTD） method based on a normalized formulation of Maxwell＇s equations is developed for modeling and simulating silicon-on-insulator （SOD thin-ridge waveguide. The DGTD method employs unstructured meshes and piecewise high-order polynomials for spatial discretization, and Runge-Kutta methods for time integration. It is found that the numerical results of the leakage loss of SOI thin-ridge waveguide agree well with those of analytical solutions, which proves that the proposed method is an ideal tool for the quantitative analysis for SOI thin-ridge waveguide.展开更多
基金Supported by the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘A novel high-order three-dimensional （3-D） discontinuous Galerkin time domain （DGTD） method based on a normalized formulation of Maxwell＇s equations is developed for modeling and simulating silicon-on-insulator （SOD thin-ridge waveguide. The DGTD method employs unstructured meshes and piecewise high-order polynomials for spatial discretization, and Runge-Kutta methods for time integration. It is found that the numerical results of the leakage loss of SOI thin-ridge waveguide agree well with those of analytical solutions, which proves that the proposed method is an ideal tool for the quantitative analysis for SOI thin-ridge waveguide.
