Thermoelectric properties of Ce0.09Fe0.67Co3.33Sb12/FeSb2.1Te multi-layered structures with period of 5 nm were studied in temperature ranging from 300 K to 500 K. Structures were prepared by Pulsed Laser Deposition (...Thermoelectric properties of Ce0.09Fe0.67Co3.33Sb12/FeSb2.1Te multi-layered structures with period of 5 nm were studied in temperature ranging from 300 K to 500 K. Structures were prepared by Pulsed Laser Deposition (PLD) on fused sili- ca quartz glass substrates at the substrate temperature during the deposition Ts = 230°C and Ts = 250°C with the laser beam energy density Ds = 3 Jcm-2. In the contribution temperature dependencies of the in-plane electrical conductivity, the Seebeck coefficient and the resultant power factor together with room temperature value of thermoelectric figure of merit are presented.展开更多
The residual stresses accumulated in the forming process have great effects on the product quality of the glass bulb.Based on the characteristics analysis of glass bulb forming,a mathematical model has been establishe...The residual stresses accumulated in the forming process have great effects on the product quality of the glass bulb.Based on the characteristics analysis of glass bulb forming,a mathematical model has been established for calculating residual stresses of glass pressing process.The material is assumed as thermorheologically simple thermoviscoelastic material,and the flow-induced stress is neglected.The consequences of equilibrium and compatibility equations are discussed in detail,and the boundary conditions are specified for various stages of the forming process.The numerical solution is based on the theory of thin layers,combined with finite difference method in the time and layer difference in the thickness direction.The presented model and solution method could easily be extended to general pressing process of glass,and applied to problems relative to glass pressing,providing extensive reference values.Keywords glass bulb-residual stresses-mathematical modeling-numerical simulation-theory of thin layers Supported by the National Natural Science Foundation of China(Grant No.50205011),and the Program for New Century Excellent Talents in University(Grant No.NCET-04-0718)展开更多
基金supported by Czech Grant Agency under GACR P108/10/1315 and P108/13-33056S
文摘Thermoelectric properties of Ce0.09Fe0.67Co3.33Sb12/FeSb2.1Te multi-layered structures with period of 5 nm were studied in temperature ranging from 300 K to 500 K. Structures were prepared by Pulsed Laser Deposition (PLD) on fused sili- ca quartz glass substrates at the substrate temperature during the deposition Ts = 230°C and Ts = 250°C with the laser beam energy density Ds = 3 Jcm-2. In the contribution temperature dependencies of the in-plane electrical conductivity, the Seebeck coefficient and the resultant power factor together with room temperature value of thermoelectric figure of merit are presented.
基金the National Natural Science Foundation of China(Grant No.50205011)the Program for New Century Excellent Talents in University(Grant No.NCET-04-0718)
文摘The residual stresses accumulated in the forming process have great effects on the product quality of the glass bulb.Based on the characteristics analysis of glass bulb forming,a mathematical model has been established for calculating residual stresses of glass pressing process.The material is assumed as thermorheologically simple thermoviscoelastic material,and the flow-induced stress is neglected.The consequences of equilibrium and compatibility equations are discussed in detail,and the boundary conditions are specified for various stages of the forming process.The numerical solution is based on the theory of thin layers,combined with finite difference method in the time and layer difference in the thickness direction.The presented model and solution method could easily be extended to general pressing process of glass,and applied to problems relative to glass pressing,providing extensive reference values.Keywords glass bulb-residual stresses-mathematical modeling-numerical simulation-theory of thin layers Supported by the National Natural Science Foundation of China(Grant No.50205011),and the Program for New Century Excellent Talents in University(Grant No.NCET-04-0718)
