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Stacking-dependent electronic and topological properties in van der Waals antiferromagnet MnBi_(2)Te_(4)films
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作者 Jiaheng Li Quansheng Wu Hongming Weng 《npj Computational Materials》 2025年第1期550-555,共6页
Combining first-principles calculations and tight-binding Hamiltonians,we study the stackdependent behaviour of electronic and topological properties of layered antiferromagnet MnBi_(2)Te_(4).Lateral shift of top sept... Combining first-principles calculations and tight-binding Hamiltonians,we study the stackdependent behaviour of electronic and topological properties of layered antiferromagnet MnBi_(2)Te_(4).Lateral shift of top septuple-layer greatly modifies electronic properties,and even induces topological phase transition between quantum anomalous Hall(QAH)insulators with C=1 and trivial magnetic insulators with C=0.The local energy minimum of"incorrect"stacking order exhibits thicknessdependent topology opposite to the usual stacking order,which is attribute to relatively weakened interlayer Te-Te interaction in"incorrect"stacking configuration.Our effectivemodel analysis provides a comprehensive understanding of the underlying mechanisms involved,and we also propose two optical setups that can effectively differentiate between different stacking configurations.Our findings underscores the nuanced and profound influence that interlayer sliding in magnetic topological materials can have on the macroscopic quantum states,opening new avenues for the design and engineering of topological quantum materials. 展开更多
关键词 local energy minimum layered antiferromagnet topological properties thicknessdependent topology stacking dependent properties electronic properties electronic topological properties topological phase transition
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