We examine the electromechanical field and charge redistribution within a flexoelectric semiconductor(FS)nanobeam,accounting for bending,fundamental thickness-shear,and antisymmetric thickness-stretch deformations.The...We examine the electromechanical field and charge redistribution within a flexoelectric semiconductor(FS)nanobeam,accounting for bending,fundamental thickness-shear,and antisymmetric thickness-stretch deformations.The coupled gov-erning equations include microstructure,flexoelectric,and semiconductor effects,highlighting the interplay between me-chanical displacement,electric potential,and charge carriers.For applications in flexoelectronic devices,the static bending of a simply supported FS beam induced by uniform pressure and wave propagation in an unbounded FS beam are analytically addressed using the derived framework.The effects of antisymmetric thickness-stretch on mechanical displacements and electron concentration perturbation,as well as size dependence of microstructure and flexoelectric effects,are identified.An interesting finding reveals that wave frequencies of the antisymmetric thickness-stretch mode,as anticipated by the proposed model,are larger compared to those of the model neglecting flexoelectric and semiconductor effects.For the first time,the cutoff frequency of antisymmetric thickness-stretch impacted by the two features is explained mathematically.These findings are beneficial for enhancing the performance of flexoelectronic sensors and electroacoustic devices.展开更多
In this research,mechanical stress,static strain and deformation analyses of a cylindrical pressure vessel subjected to mechanical loads are presented.The kinematic relations are developed based on higherorder sinusoi...In this research,mechanical stress,static strain and deformation analyses of a cylindrical pressure vessel subjected to mechanical loads are presented.The kinematic relations are developed based on higherorder sinusoidal shear deformation theory.Thickness stretching formulation is accounted for more accurate analysis.The total transverse deflection is divided into bending,shear and thickness stretching parts in which the third term is responsible for change of deflection along the thickness direction.The axisymmetric formulations are derived through principle of virtual work.A parametric study is presented to investigate variation of stress and strain components along the thickness and longitudinal directions.To explore effect of thickness stretching model on the static results,a comparison between the present results with the available results of literature is presented.As an important output,effect of micro-scale parameter is studied on the static stress and strain distribution.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.12002086(Gongye Zhang))Fundamental Research Funds for the Central Universities(Grant No.2242022R40040(Gongye Zhang))Postgraduate Research&Practice Innovation Program of Jiangsu Province(Grant No.KYCX24_0365(Ziwen Guo)).
文摘We examine the electromechanical field and charge redistribution within a flexoelectric semiconductor(FS)nanobeam,accounting for bending,fundamental thickness-shear,and antisymmetric thickness-stretch deformations.The coupled gov-erning equations include microstructure,flexoelectric,and semiconductor effects,highlighting the interplay between me-chanical displacement,electric potential,and charge carriers.For applications in flexoelectronic devices,the static bending of a simply supported FS beam induced by uniform pressure and wave propagation in an unbounded FS beam are analytically addressed using the derived framework.The effects of antisymmetric thickness-stretch on mechanical displacements and electron concentration perturbation,as well as size dependence of microstructure and flexoelectric effects,are identified.An interesting finding reveals that wave frequencies of the antisymmetric thickness-stretch mode,as anticipated by the proposed model,are larger compared to those of the model neglecting flexoelectric and semiconductor effects.For the first time,the cutoff frequency of antisymmetric thickness-stretch impacted by the two features is explained mathematically.These findings are beneficial for enhancing the performance of flexoelectronic sensors and electroacoustic devices.
文摘In this research,mechanical stress,static strain and deformation analyses of a cylindrical pressure vessel subjected to mechanical loads are presented.The kinematic relations are developed based on higherorder sinusoidal shear deformation theory.Thickness stretching formulation is accounted for more accurate analysis.The total transverse deflection is divided into bending,shear and thickness stretching parts in which the third term is responsible for change of deflection along the thickness direction.The axisymmetric formulations are derived through principle of virtual work.A parametric study is presented to investigate variation of stress and strain components along the thickness and longitudinal directions.To explore effect of thickness stretching model on the static results,a comparison between the present results with the available results of literature is presented.As an important output,effect of micro-scale parameter is studied on the static stress and strain distribution.
