This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the tem...This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25 350℃. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I-V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer.展开更多
The current through a metal-semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode： diffusion of the semiconductor carriers in metal, thermionic...The current through a metal-semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode： diffusion of the semiconductor carriers in metal, thermionic emission-diffusion （TED） of carriers through a Schottky gate, and a mechanical quantum that pierces a tunnel through the gate. The system was solved by using a coupled Poisson-Boltzmann algorithm. Schottky BH is defined as the difference in energy between the Fermi level and the metal band carrier majority of the metal--semiconductor junction to the semiconductor contacts. The insulating layer converts the MS device in an MIS device and has a strong influence on its current-voltage （I-V） and the parameters ofa Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behaviour of Schottky diodes with and without an interracial insulator layer. These include the particular distribution of interface states, the series resis- tance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase in the process ofthermionic electrons and holes, which will in turn act on the I-V characteristic of the diode, and an overflow maximum value [NT = 3 × 10^20] is obtained. The I-V characteristics of Schottky diodes are in the hypothesis of a parabolic summit.展开更多
文摘This paper investigates the behaviour of the reverse-bias leakage current of the Schottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/GaN heterostructure and Ni/Au Schottky contact in the temperature range of 25 350℃. It compares with the Schottky diode without Aluminium inserting layer. The experimental results show that in the Schottky diode with Al layer the minimum point of I-V curve drifts to the minus voltage, and with the increase of temperature increasing, the minimum point of I V curve returns the 0 point. The temperature dependence of gate-leakage currents in the novelty diode and the traditional diode are studied. The results show that the Al inserting layer introduces interface states between metal and Al0.245Ga0.755N. Aluminium reacted with oxygen formed Al2O3 insulator layer which suppresses the trap tunnelling current and the trend of thermionic field emission current. The reliability of the diode at the high temperature is improved by inserting a thin Al layer.
文摘The current through a metal-semiconductor junction is mainly due to the majority carriers. Three distinctly different mechanisms exist in a Schottky diode： diffusion of the semiconductor carriers in metal, thermionic emission-diffusion （TED） of carriers through a Schottky gate, and a mechanical quantum that pierces a tunnel through the gate. The system was solved by using a coupled Poisson-Boltzmann algorithm. Schottky BH is defined as the difference in energy between the Fermi level and the metal band carrier majority of the metal--semiconductor junction to the semiconductor contacts. The insulating layer converts the MS device in an MIS device and has a strong influence on its current-voltage （I-V） and the parameters ofa Schottky barrier from 3.7 to 15 eV. There are several possible reasons for the error that causes a deviation of the ideal behaviour of Schottky diodes with and without an interracial insulator layer. These include the particular distribution of interface states, the series resis- tance, bias voltage and temperature. The GaAs and its large concentration values of trap centers will participate in an increase in the process ofthermionic electrons and holes, which will in turn act on the I-V characteristic of the diode, and an overflow maximum value [NT = 3 × 10^20] is obtained. The I-V characteristics of Schottky diodes are in the hypothesis of a parabolic summit.
